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Polyester formation: Aminolytic degradation and proposed mechanisms of the reaction

V. A. Popoola1988-09-20Journal of Applied Polymer Science

Abstract The acid‐catalyzed chemical degradation of polyesters is discussed, with emphasis on the chemistry of the reactions involved. Using primary amines as degrading agents in presence of water as the acid‐ionizing medium, mechanisms consistent with the chemistry of the reaction and those of realted esters are prop…

Polymer crystallization and propertiesFiber-reinforced polymer compositesPolymer Science and PVC

Optical studies of self-trapped excitons in SiO 2

Chihiro Itoh、Katsumi Tanimura、Noriaki Itoh1988-09-20Journal of Physics C Solid State Physics

Linear polarisation, with respect to the z axis, and the effect of the subsequent laser-induced excitation on the luminescence and transient optical absorption induced by irradiation of crystalline SiO 2 with an electron pulse have been studied. It is found that the luminescence spectrum consists of two bands peaked a…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsSilicon Nanostructures and Photoluminescence

Conducting polypyrrole composite thin films chemically prepared by spreading on surface of aqueous solution containing oxidizing agent

Mitsuyuki Morita、Isao Hashida、Masato Nishimura1988-09-20Journal of Applied Polymer Science

Abstract Polypyrrole–PMMA composite films have been prepared with the chemical oxidative polymerization by spreading the water‐insoluble solvent solution of pyrrole and PMMA mixture on the surface of the aqueous solution containing K 2 S 2 O 8 , the oxidizing agent. The conductivity of the films increases rapidly, pas…

Advanced Sensor and Energy Harvesting MaterialsConducting polymers and applicationsAnalytical Chemistry and Sensors

Photoelectron Holography

John Barton1988-09-19OpenAlex

A photoelectron hologram is a two-angle photoelectron diffraction pattern: Direct photoemission plays the role of the reference wave and the scattered waves are the object waves. When the hologram is created from the core-level photoemission of single emitting species on an ordered surface, a complete three-dimensiona…

Advanced Electron Microscopy Techniques and ApplicationsElectron and X-Ray Spectroscopy TechniquesPhotocathodes and Microchannel Plates

Trial model for the tilting scheme in AgNbO3 derived by electron diffraction and imaging

Marc Verwerft、Gustaaf Van Tendeloo、J. Van Landuyt 等 5 位作者1988-09-16physica status solidi (a)

Transmission electron diffraction and imaging are applied to derive a proposal for the tilt scheme of the perovskite based structure of silver niobate (AgNbO3). Electron diffraction data enable a reduction of the possible spacegroups down to two, each compatible with a number of tilt schemes for the octahedra in the p…

Ferroelectric and Piezoelectric MaterialsGlass properties and applicationsX-ray Diffraction in Crystallography

Dislocation groups, multipoles, and friction stresses in α-CuZn alloys

J. Olfe、H. Neuhäuser1988-09-16physica status solidi (a)

Characteristic features of the dislocation structure developed in the first stage of deformation of single-glide oriented crystals of concentrated f.c.c. alloys like α-CuZn are extended multipoles in the primary slip planes. Their various configurations are explained by considering their formation in the case that the…

Microstructure and mechanical propertiesAluminum Alloy Microstructure PropertiesMetallurgy and Material Forming

TEM study of phases and domains in NaNbO3 at room temperature

Jun Chen、Duan Feng1988-09-16physica status solidi (a)

It is found with TEM that there is a new phase, called M phase, coexisting with the normal P and Q phases at room temperature. All kinds of ferroelectric domains in the Q phase and antiferroelectric domains in the P phase are observed. They are in good agreement with the results given by the symmetry theory on domains…

Photorefractive and Nonlinear OpticsAcoustic Wave Resonator TechnologiesSolid-state spectroscopy and crystallography

Raman Scattering Study of Scheelite-Type Double Molybdates

Kazuhiro Hara、Hiromitsu Takenaka、Yoshihiro Ishibashi1988-09-15Journal of the Physical Society of Japan

Raman scattering measurements were performed to investigate optical modes of scheelite-type double molybdates XY(MoO 4 ) 2 (X=Li, Na and Y=La, Nd). In the polarized Raman scattering measurements, we have found four modes in NaLa(MoO 4 ) 2 , one in low frequency region (with B g symmetry) and three in high frequency re…

Glass properties and applicationsCrystal Structures and PropertiesSolid-state spectroscopy and crystallography

Resonant Raman-active acoustic phonons in ion-implanted GaAs

M. Holtz、R. Zallen、O. Brafman1988-09-15Physical review. B, Condensed matter

We have observed a new, strong feature at 47 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ in the first-order Raman spectrum of ion-implanted GaAs, prior to any anneal. It is not present in the Raman spectrum of either amorphous or single-crystal GaAs. The peak is strong between excitation photon energies \ensuremath{\si…

Semiconductor materials and devicesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence

Preparation and electrical properties of bromine intercalated vapor-grown carbon fibers

Morinobu Endo、Hidenori Yamanashi、Gary L. Doll 等 4 位作者1988-09-15Journal of Applied Physics

Vapor-grown carbon fibers possessing a high degree of preferential orientation have been prepared using either a catalyzed substrate or a fluidized catalytic method, yielding fibers with diameters of about 10 and 1 μm, respectively. After heat treatment at 2600–2960 °C, the fibers were used as a host material for brom…

Advancements in Battery MaterialsGraphene research and applicationsSupercapacitor Materials and Fabrication

Structure of ScBO3

Douglas A. Keszler、H. Sun1988-09-15Acta Crystallographica Section C Crystal Structure Communications

Cristallisation dans R3c avec affinement jusqu'a 0,017. L'angle O−Sc−O vaut 92,8° indiquant une faible elongation trigonde des octoedres formes d'atomes O

Crystal Structures and PropertiesSolid-state spectroscopy and crystallographyX-ray Diffraction in Crystallography

Computerized analysis of glow curves from thermally activated processes

J.E. Hoogenboom、W. de Vries、J. B. Dielhof 等 4 位作者1988-09-15Journal of Applied Physics

A method is presented to analyze complex glow curves composed of several, possibly overlapping, peaks from thermally stimulated processes of general kinetic order and is applicable when the process studied is activated using any arbitrary temperature profile. A theoretical analysis is given to determine the properties…

nanoparticles nucleation surface interactionsThermal and Kinetic AnalysisChemical Thermodynamics and Molecular Structure

Imperfections in amorphous chalcogenides. III. Interacting-lone-pair model for localized gap states based on a tight-binding energy-band calculation forAs2S3

Yuichi Watanabe、Hiroshi Kawazoe、Masayuki Yamane1988-09-15Physical review. B, Condensed matter

Lone-pair electrons on S or Se interacting with each other were proposed as a new type of electrically neutral gap states in amorphous chalcogenides based on energy-band calculations using a simple tight-binding method. Much attention was focused on the ``molecular'' systems such as amorphous S, Se, and ${\mathrm{As}}…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Multifractal spectral and wave-function properties of the quasiperiodic modulated-spring model

Τ. Janssen、Mahito Kohmoto1988-09-15Physical review. B, Condensed matter

A method is discussed to analyze multifractal properties of spectra and wave functions by means of an entropy function. The method is exemplified on a model for lattice vibrations in an incommensurate crystal phase. It is shown that the model has a spectrum with scaling properties. Moreover, it is probably singular co…

Mathematical Dynamics and FractalsQuasicrystal Structures and PropertiesAdvanced Mathematical Theories and Applications

Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix

K.L. Bhatia、G. Parthasarathy、Ashwani K. Sharma 等 4 位作者1988-09-15Physical review. B, Condensed matter

A $p\ensuremath{-}n$ transition in the electronic conduction in Bi-doped bulk amorphous semiconductors ${\mathrm{Ge}}_{20}{\mathrm{Te}}_{80\ensuremath{-}x}{\mathrm{Bi}}_{x}$ at about $x=3.5$ has been observed for the first time. $n$-type conduction has been established by the measurement of thermoelectric power that b…

Material Dynamics and PropertiesTheoretical and Computational PhysicsPhase-change materials and chalcogenides

Cu{001}c(2×2)-Pd: An ordered surface alloy

S. C. Wu、Senlin Lü、Z. Q. Wang 等 9 位作者1988-09-15Physical review. B, Condensed matter

A quantitative low-energy electron diffraction (LEED) intensity analysis shows that the room-temperature reaction of Pd atoms with a Cu{001} surface produces a surface alloy, Cu{100}c(2\ifmmode\times\else\texttimes\fi{}2)-Pd, analogous to Cu{001}c(2\ifmmode\times\else\texttimes\fi{}2)-Au. The structure of Cu{001}c(2\i…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Bulk band dispersion inTi2O3andV2O3

Kevin E. Smith、Victor E. Henrich1988-09-15Physical review. B, Condensed matter

We report here a comprehensive study of the bulk electronic structure of single-crystal ${\mathrm{Ti}}_{2}$${\mathrm{O}}_{3}$ and ${\mathrm{V}}_{2}$${\mathrm{O}}_{3}$ using both angle-integrated and angle-resolved photoemission and synchrotron radiation. The electronic structure of these materials is of particular int…

Transition Metal Oxide NanomaterialsGa2O3 and related materialsElectronic and Structural Properties of Oxides

Exact eigenstates on a two-dimensional Penrose lattice and their fractal dimensions

Tetsuji Tokihiro、Takeo Fujiwara、M. Arai1988-09-15Physical review. B, Condensed matter

Exact eigenstates of a tight-binding model on a two-dimensional Penrose lattice are investigated. Several exact eigenfunctions are found for certain transfer matrices, and a method to obtain more general exact solutions is proposed. The fractal dimension of self-similar non-normalizable eigenfunctions is defined, and…

Theoretical and Computational PhysicsQuasicrystal Structures and PropertiesAdvanced Mathematical Theories and Applications

Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon-on-insulator

S. N. G. Chu、S. Nakahara、S. J. Pearton 等 5 位作者1988-09-15Journal of Applied Physics

Distinct antiphase domain structures in GaAs epitaxial layers grown on a Si/SiO2/Si-substrate structure by metalorganic chemical vapor deposition have been revealed by using a silicon etchant (HF/HNO3). The antiphase is characterized by the [011]-oriented etching textures which rotate 90° between adjacent domains. The…

Semiconductor Quantum Structures and DevicesGaN-based semiconductor devices and materialsOptical Coatings and Gratings