Materials Literature
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Internal friction measurements at constant frequency are useful in determining the liquid–glass transition of non-crystalline materials that devitrify easily or when the number of available configurations are entropically not sufficiently high to develop a neat endotherm at Tg. This method is applied to oxide glasses…
ESR and photo-ESR measurements of the V centre are performed to determine the charge states of the oxygen vacancies in ZnO raw material and Li-doped ZnO ceramics. The temperature dependence of the relative ESR intensity and the optical excitation of the ESR signal of the V centre are investigated. The results show, th…
Cristallisation dans P4/nmm avec a=4,696, c=7,559, Z=2; affinement jusqu'a R=0,0223. La structure est caracterisee par des couches de tetraedres ∞ 2 [NaS − 4/4 ], separees par des couches doubles de Rb, pour former une geometrie de type PbFCl
β-Pb 0,333 V 2 O 5 cristallise dans C2/m avec a=15,463, b=3,6477, c=10,116 A, β=109,20 o , Z=6; affinement jusqu'a R=0,054. La structure est du meme type que celle de β-Na x V 2 O 5 . Du fait du desordre monodimensionnel des chaines decalees d'ions Pb le long de [010], des reflexions du sous-reseau apparaissant a h/2,…
Cristallisation dans Cmcm avec a=3,6784, b=11,6120, c=18,6332 A, Z=8; affinement jusqu'a R=0,041. Des octaedres VO 6 deformes sont lies pour former des couches V 2 O 5 paralleles a (001). Des ions K sont situes entre les couches, entoures par 8 atomes O, et sont dans un miroir au parallele a (001)
The oxidation of the GaAs(110) surface with ${\mathrm{NO}}_{2}$ has been studied by Fourier-transform infrared spectroscopy, molecular-beam techniques, and transport measurements. We find that ambient ${\mathrm{NO}}_{2}$ dissociatively adsorbs with an average low-coverage probability of 0.03 at room temperature and 0.…
Efficient radiative defects are introduced in boron-doped silicon by carbon- and oxygen-ion implantations and subsequent annealing up to 500 \ifmmode^\circ\else\textdegree\fi{}C. They exhibit sharp and intense low-temperature photoluminescence transitions in a range between 767.0 meV (P line) and 1080.0 meV (Y line).…
Lattice-dynamics calculations and molecular-dynamics simulations are used to study the variation with particle number N in the mean squared displacement 〈(\ensuremath{\delta}u${)}^{2}$${\mathrm{〉}}_{\mathit{N}}$ for systems with Lennard-Jones and repulsive Yukawa and ${\mathit{r}}^{\mathrm{\ensuremath{-}}\mathit{n}}$…
Structure analysis of K 3 D(SO 4 ) 2 was performed by X-ray diffraction at room temperature. Cell parameters were obtained as a =9.787(3) Å, b =5.682(2) Å, c =14.697(4) Å, β=103.00(2)° with a space group A 2/ a , Z =4. Excess electrons were found on a differential Fourier map around a center of inversion. The structur…
We report the results of a systematic investigation of the tunneling states (TS's) in neutron-irradiated quartz. Measurements of the acoustic absorption and the variation of the velocity of sound were carried out as a function of temperature (0.3--300 K) and in the ultrasonic frequency range 200--700 MHz, on quartz sp…
We have used x-ray photoelectron diffraction to probe strain at the lattice-mismatched semiconductor heterojunctions Ge/Si(001) and Si/Ge(001). Deposition of four-monolayer equivalents of Si on Ge(001) at \ensuremath{\sim}350 \ifmmode^\circ\else\textdegree\fi{}C causes cluster formation, whereas deposition of the same…
The electronic structure of poly-3-hexylthiophene (P3HT) is studied in the solid state with photoelectron spectroscopy, as the polymer is gradually doped from NOPF6. Solubility and processability of P3HT allow for the preparation of very clean and very thin films, which are then doped without air-exposure. The evoluti…
In order to investigate the influence of chain length on the diffusion of small molecules in polymers, molecular dynamics simulations have been carried out for two model systems. One is the short chain model which is composed of 30 n-alkane-like chains each having 20 segments. The other is the infinite length chain mo…
Epitaxial growth of compound semiconductors on the (001) exhibits an asymmetry in the dislocation morphology in the two 〈110〉 directions for thicknesses near the critical thickness. The source of the asymmetry has been investigated by growth of a thickness wedge of p- and n-type GaAs0.95 P0.05 on GaAs by metalorganic…
A very high-resistivity value (ρ 4K ∼ 4300 μΩcm), associated to a strong negative temperature dependence (α = 1/ρ · Δρ/Δ T ∼ −10 −3 K −1 ), is measured in pure icosahedral Al 63 Cu 25 Fe 12 phases (a single grain and polyquasicrystalline samples). Moreover the resistivity of the defective as-quenched Al 63 Cu 25 Fe 12…
Cristallisation dans C2/c avec a=9,940, b=8,5483, c=28,762 A, β=93,683 o , Z=4; affinement jusqu'a R=0,033. La structure comprend un reseau a 3 dimensions d'octaedres FeO 6 ayant des coins en commun avec des groupements As 2 O 7 , et un espace interstitiel dans lequel sont situes les ions Na + . Ce squelette est decri…
We have observed evidence of an incommensurate structural distortion in the ternary chalcogenide ${\mathrm{Ta}}_{2}$${\mathrm{NiSe}}_{7}$. The structure of ${\mathrm{Ta}}_{2}$${\mathrm{NiSe}}_{7}$ is similar to ${\mathrm{FeNb}}_{3}$${\mathrm{Se}}_{10}$ with one tantalum-centered trigonal prismatic chain and two inequi…
A free-energy model for the inhomogeneous hard sphere fluid mixture was derived recently [Phys. Rev. Lett. 63, 980 (1989)] which is based on the fundamental geometric measures of the particles. It features convolution forms for the direct correlation functions as obtained by functional differentiation from the free en…
The zone-center magnon modes of LuFeO3 have been studied by first-order Raman scattering. At room temperature, the two magnon modes (M1 and M2) associated with the canted, antiferromagnetically ordered Fe3+ moments are seen at 18.5 and 22 cm−1, respectively. Their corresponding symmetries, determined through polarizat…
Nine SiO2 :GeO2 glasses were heated under an H2 or O2 atmosphere. In the H2 atmosphere optical absorption bands were induced at vacuum ultraviolet (VUV) (>6.22 eV), 5.14 eV (242 nm), 3.82 eV (325 nm), and 0.452 eV (2.75 μm). The intensities of all the induced bands are in linear relation with each other. Heat t…