M. Duneau、André Katz1985-06-24OpenAlex
We present here a general framework to produce quasiperiodic tilings and more general quasiperiodic patterns in $n$ dimensions corresponding to a finite number of local neighborings around each point. In particular, we give simple descriptions of the Penrose tilings of the plane and of a tiling of the three-dimensiona…
Quasicrystal Structures and Properties
Peter J. Feibelman1985-06-17Physical Review Letters
The energy versus position of a single Si adatom on a two-dimensionally infinite Al(001) substrate is calculated. The only physical approximations made are the Born-Oppenheimer approximation and the use of a local exchange-correlation potential. Computed binding energies, force constants, and bond charges for two diff…
Graphene research and applicationsBoron and Carbon Nanomaterials ResearchChemical and Physical Properties of Materials
Sheila Garcia、E. Altshuler1985-06-16physica status solidi (a)
The possibility that non-stoichiometric barium perovskite (BaFeO3−x) is formed in the very early stages of the reaction kinetics of the hexagonal M-phase ferrites (BaFe12O19) is evaluated. Samples with atomic relation Ba/Fe = 1 are heated at low and moderate temperatures (600 to 1100 °C) in air, and the collected Moss…
Multiferroics and related materialsMagnetic Properties and Synthesis of FerritesIron oxide chemistry and applications
D. Ceccaldi1985-06-15Physical review. B, Condensed matter
X-ray diffuse scattering from the plastic phase of cyclohexanol has been recorded on photographic films by the Burger precession method. We present a new theoretical model to calculate x-ray diffusion intensity including orientational and translational molecular correlations. We calculate the dielectric correlation fa…
Material Dynamics and PropertiesGlass properties and applicationsX-ray Diffraction in Crystallography
G. D. Tewari、D. P. Khandelwal、H. D. Bist1985-06-15The Journal of Chemical Physics
The Raman spectra (30–3300 cm−1) of a single crystal and of polycrystalline forms of NH4SCN are presented in the temperature range 135 to −175 °C. The polarization behavior of the Raman bands reveals the antipolar arrangements of SCN− ions in the room temperature phase. Above 86.5 °C the spectra do not show polarizati…
Crystallography and molecular interactionsSolid-state spectroscopy and crystallographyInorganic Chemistry and Materials
William B. Cook、Sidney Perkowitz1985-06-15Applied Optics
The refractive index n(ν) and absorption coefficient α(ν) of c-cut sapphire are measured at the temperatures 5.5, 30, 60,150, 200, 250, and 300 K for frequencies between 30 and 230 cm−1. Values given for n are accurate to within 1% and those for α to within 5%. Polynomial fits are included, and evidence of multiphonon…
Glass properties and applicationsPhase-change materials and chalcogenidesX-ray Spectroscopy and Fluorescence Analysis
Y. Akishige、Tōru Fukatsu、Masakazu Kobayashi 等 4 位作者1985-06-15Journal of the Physical Society of Japan
Temperature dependence of the dielectric constant and the ac conductivity of Fe 3 O 4 single crystal has been studied below the Verwey point of 122 K in a frequency range from 10 Hz to 10 kHz. Dielectric relaxation phenomena have been found in two temperature ranges: one appears around 30 K–50 K and the other occurs b…
Glass properties and applicationsMagnetic Properties and Synthesis of FerritesMineralogy and Gemology Studies
P. D. Johnson、J. W. Davenport1985-06-15Physical review. B, Condensed matter
A quantum-theoretical treatment is applied to calculate the cross section for emission of photons produced in inverse photoemission from an adsorbed molecule. Careful consideration of the type of potential that may be used in such calculations shows that photoemission and inverse photoemission from localized levels ma…
Molecular Junctions and NanostructuresAnalytical Chemistry and SensorsElectron and X-Ray Spectroscopy Techniques
A. Mauger、D. L. Mills1985-06-15Physical review. B, Condensed matter
We present a theoretical description of the influence of conduction-electron--local-moment exchange on the properties of free carriers in antiferromagnetic semiconductors, with explicit application to EuTe. We conclude that the ferron, an electron self-trapped in a potential well formed by exchange-induced ferromagnet…
Physics of Superconductivity and MagnetismMagnetic and transport properties of perovskites and related materialsAdvanced Condensed Matter Physics
Robert Jones1985-06-15The Journal of Chemical Physics
The absolute total electron scattering cross section for methane (inelastic+elastic, integrated over all angles) was measured with a time-of-flight electron transmission spectrometer for incident energies from 1.3 to 50 eV. The major discrepancies that exist between recent absolute measurements of the total cross sect…
X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesPhotocathodes and Microchannel Plates
Ulrich Schwing、Bernd Hoffmann1985-06-15Journal of Applied Physics
A macroscopic model of the microcontacts in ceramic ZnO varistors was prepared by using ZnO single-crystal plates and a layer of the usual oxide additives. The electrical properties of these model contacts are very similar to those of the microcontacts. Measurements on one-sided macrocontacts require the assumption of…
ZnO doping and propertiesSemiconductor materials and devicesThin-Film Transistor Technologies
T. Wang、K. Hess1985-06-15Journal of Applied Physics
The electron velocity distribution is calculated for an idealized model of the high electron mobility transistor using a many-particle Monte Carlo model and a self-consistent two-dimensional Poisson solver. Hot electron effects, nonstationary effects, and real space transfer are analyzed. The results show that signifi…
Catalytic Processes in Materials ScienceQuantum and electron transport phenomenaSemiconductor materials and devices
E. O. Kane1985-06-15Physical review. B, Condensed matter
We model the phonon spectra of the diamond-structure compounds C, Si, Ge, Sn and the zinc-blende-structure compounds GaP, GaAs, and ZnS. We use a four-parameter valence-force model consisting of first- and second-neighbor forces plus the very important coplanar angle-angle interaction introduced by McMurry et al. Alth…
High-pressure geophysics and materialsBoron and Carbon Nanomaterials ResearchElectronic and Structural Properties of Oxides
P. Kuivalainen、H. Stubb、H. Isotalo 等 5 位作者1985-06-15Physical review. B, Condensed matter
The results of an experimental study of dc and microwave electrical conductivities, electron-spin resonance, optical reflection, and infrared absorption in ${\mathrm{FeCl}}_{3}$-doped polyparaphenylene (PPP) are presented. In low-conducting PPP, the conductivity is described by interpolaron hopping processes among the…
Organic Electronics and PhotovoltaicsConducting polymers and applicationsElectrochemical Analysis and Applications
L. C. Porter、Robert J. Doedens1985-06-15Acta Crystallographica Section C Crystal Structure Communications
[ PtC12(C6 H 13N)(CsH 11P)] The shortest intermolecular contact [3.46 (2)A], observed between N and Cl(2)[~+x, ~--y, - z ] , is probably due to an N - H . . . C 1 hydrogen bond. The packing arrangement is shown in Fig. 3. Thanks are due to Dr G. Consiglio (ETH, Zfirich) who kindly prepared the compound. The drawings w…
Metal-Organic Frameworks: Synthesis and ApplicationsCrystal structures of chemical compoundsMagnetism in coordination complexes
S. Hava、Robert G. Hunsperger1985-06-15Journal of Applied Physics
Theoretical and experimental results describing the dependence of the Seebeck and Peltier coefficients on the composition of Ga1−xAlxAs solid solution are given. The Seebeck coefficient for nondegenerately doped n- and p-type Ga1−xAlxAs is given by the simple expressions αn=(k/e)(lnNc/n+2) and αp=−(k/e)(lnNv/p+2), res…
Advanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsAdvanced Thermodynamics and Statistical Mechanics
N. G. Stoffel、S. D. Kevan、N. V. Smith1985-06-15Physical review. B, Condensed matter
We have studied the charge-density-wave phase transition of ${\mathrm{TiSe}}_{2}$ using photoelectron spectroscopy with high angle and energy resolution. We accurately measured the band dispersions of the Se 4p and Ti 3d bands, whose interaction is thought to be deeply involved in the phase transition. In contrast to…
2D Materials and ApplicationsOrganic and Molecular Conductors ResearchIron-based superconductors research
Iain M. Young、M.I.J. Beale、J. D. Benjamin1985-06-15Applied Physics Letters
Depending on the dopant concentration, two distinct types of porous silicon can be formed during the anodization of silicon in hydrofluoric acid. A range of samples of both types of porous silicon has been investigated using x-ray double crystal diffraction techniques. The crystal lattice of porous silicon is found to…
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications
Yoshiyuki Morioka、Koshiro Toriumi、Tasuku Ito 等 5 位作者1985-06-15Journal of the Physical Society of Japan
Crystals of K 3 Fe(CN) 6 undergo a second-order phase transition accompanied by a soft mode at about 130 K. The crystal structures of the room- and low-temperature phases have been determined by X-ray diffraction. Crystals of the room-temperature phase are monoclinic with space group P 2 1 / c , a =7.058(1), b =10.426…
Magnetism in coordination complexesOrganic and Molecular Conductors ResearchInorganic Chemistry and Materials
John B. Gruber、Richard P. Leavitt、Clyde A. Morrison 等 4 位作者1985-06-15The Journal of Chemical Physics
We report an analysis of new and previously existing optical absorption and fluorescence data, far-infrared data, and electronic Raman scattering data for Eu3+, Dy3+, and Er3+ in the C3i sites of Y2O3 and R2O3, where R=a rare earth. Our previous analysis of C2-site spectra yields an effective point-charge model for th…
Luminescence Properties of Advanced MaterialsGlass properties and applicationsAdvanced Condensed Matter Physics