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The valence change of Fe in BaTiO3 studied by Mössbauer effect and gravimetry

H.‐J. Hagemann、Alfred O. Hero、U. Gonser1980-09-16physica status solidi (a)

The valence states of Fe and the charge compensation by oxygen vacancies of Fe57-doped BaTiO3 are studied by the Mössbauer effect and gravimetry as a function of O2 partial pressure. By preparational and analytical effort, it is ensured that the dopant homogeneously substitutes Ti4+ in the BaTiO3 lattice (up to 1.2 mo…

Ferroelectric and Piezoelectric MaterialsGlass properties and applicationsMagnetic and transport properties of perovskites and related materials

Order–disorder reactions in the ferroelectric perovskites Pb(Sc1/2Nb1/2)O3 and Pb(Sc1/2Ta1/2)O3. I. Kinetics of the ordering process

C. G. F. Stenger、A.J. Burggraaf1980-09-16physica status solidi (a)

The perovskites Pb(Sc1/2Nb1/2)O3 and Pb(Sc1/2Ta1/2)O3 can be obtained in a disordered state by means of a synthesis at high temperature (1250 to 1500°C). Ordering of the trivalent and pentavalent ions occurs during annealing at lower temperatures. The kinetics of this ordering process are investigated by means of X-ra…

Ferroelectric and Piezoelectric MaterialsAdvanced ceramic materials synthesisMicrowave Dielectric Ceramics Synthesis

Electro-optical surface flashover measurements

J. E. Thompson、Jie Lin、K. A. Mikkelson 等 4 位作者1980-09-15Applied Physics Letters

Electro-optical measurements of the electric field along solid insulator/vacuum interfaces have been made to determine the mechanisms associated with fast (ns) insulator flashover. Data showing the temporal and spatial performance of the insulator surface fields prior to and at flashover are presented. The results sho…

Semiconductor materials and devicesHigh voltage insulation and dielectric phenomenaPower Transformer Diagnostics and Insulation

Thickness measurement of ultrathin films on metal substrates using ATR

Hiroe Kitajima、K. Hieda、Y. Suematsu1980-09-15Applied Optics

By modifying the surface plasma mode on a bare metal surface with an ultrathin film deposited on the metal, we measured the film thickness by attenuated total reflection (ATR). Various factors causing measurement errors are estimated with numerical examples. As a result, for example, it is shown that for some thicknes…

Plasmonic and Surface Plasmon ResearchCopper Interconnects and ReliabilityOptical Coatings and Gratings

Vibrational contribution to molecular polarizabilities and hyperpolarizabilities

Pramod Pandey、D. P. Santry1980-09-15The Journal of Chemical Physics

The vibrational averaging theory of Kern and Matcha is extended, at the harmonic level of approximation, to the case where the molecular property under investigation can itself lead indirectly to a perturbation of the vibrational levels of the molecule. It is found that contributions arising from this perturbation can…

Quantum Information and CryptographyNonlinear Optical Materials ResearchMechanical and Optical Resonators

Frequency-Dependent Conductivity in NbSe3

G. Grüner、L. C. Tippie、Jeff Sanny 等 5 位作者1980-09-15Physical Review Letters

The observation of a frequency-dependent conductivity ($\ensuremath{\sigma}$) and dielectric constant ($\ensuremath{\epsilon}$) in Nb${\mathrm{Se}}_{3}$ is reported. In both charge-density-wave phases a strong frequency dependence and huge dielectric constant are observed below 100 MHz, with greatest effects observed…

Physics of Superconductivity and MagnetismOrganic and Molecular Conductors ResearchIron-based superconductors research

Experimental heat capacities of LaNi5, α-LaNi5H0.36, and β-LaNi5H6.39 from 5 to 300 °K. Thermodynamic properties of the LaNi5–H2 system

D. Ohlendorf、Howard E. Flotow1980-09-15The Journal of Chemical Physics

The heat capacities of LaNi5, α-LaNi5H0.36, and β-LaNi5H6.39 were measured from 5 to 300 °K, and in the case of LaNi5 also from 300 to 350 °K. Various special techniques and unusual circumstances involved in the measurements and calculations are described. A slight enhancement of the heat capacity of β-LaNi5H6.39 was…

Rare-earth and actinide compoundsHydrogen Storage and MaterialsNuclear Materials and Properties

High-temperature contact structures for silicon semiconductor devices

M. Wittmer1980-09-15Applied Physics Letters

While thin films of TiN and TaN are good diffusion barriers in contact structures which use nickel or gold as a top layer, they show poor barrier properties if aluminum is used as a top layer. It is shown in this letter that stable high-temperature contacts on silicon semiconductor devices can be produced by using int…

Semiconductor materials and devicesCopper Interconnects and ReliabilitySemiconductor materials and interfaces

Crystal-field analysis of triply ionized lanthanides in Cs2NaLnCl6

Carole A. Morrison、Richard P. Leavitt、D. E. Wortman1980-09-15The Journal of Chemical Physics

Optical spectra of the elpasolite hexachloride compounds Cs2NaLnCl6, where Ln represents one of the lanthanide ions, are analyzed with a crystal-field Hamiltonian of Oh symmetry. Crystal-field parameters, Bnm, are found that minimize the rms deviation between calculated and experimental energy levels for Ln=Ce, Pr, Nd…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsSolid-state spectroscopy and crystallography

Refinement of the structure of solid nitromethane

S. F. Treviño、E. Prince、C. R. Hubbard1980-09-15The Journal of Chemical Physics

The complete determination of the crystal structure of solid nitromethane has been obtained from single crystal x-ray diffraction and neutron powder diffraction data. The structure is orthorhombic, space group P212121 with a=5.1832 Å, b=6.2357 Å, c=8.5181 Å at T=4.2 K, and Z=4. Two models were used to describe the the…

Crystallography and molecular interactionsSolid-state spectroscopy and crystallographyChemical Thermodynamics and Molecular Structure

Electrical properties of the ( V 1 − x Cr x ) 2 O 3 system

H. Kuwamoto、J. M. Honig、J. Appel1980-09-15Physical review. B, Condensed matter

Extensive electrical resistivity and Seebeck-coefficient measurements are reported for ${({\mathrm{V}}_{1\ensuremath{-}x}{\mathrm{Cr}}_{x})}_{2}{\mathrm{O}}_{3}$ single-crystal alloys in the range $0\ensuremath{\le}x\ensuremath{\le}0.1$. For $0\ensuremath{\le}x\ensuremath{\le}0.005$ a metal-insulator transition is enc…

Transition Metal Oxide NanomaterialsAdvanced Condensed Matter PhysicsGa2O3 and related materials

Vibrational Excitations of Charged Solitons in Polyacetylene

E. J. Melé、Michael J. Rice1980-09-15OpenAlex

Theoretical studies of the vibrational excitations of charged solitons in polyacetylene are reported. Two strongly infrared active modes, derived from bulk optical phonons, are associated with these defects and we suggest the presence of a third, as yet unobserved, infrared-active mode in the acoustic phonon regime.

Conducting polymers and applicationsMechanical and Optical ResonatorsAnalytical Chemistry and Sensors

Temperature coefficient of resistance of thin palladium films

S. M. Shivaprasad、M. A. Angadi1980-09-14Journal of Physics D Applied Physics

The in situ temperature coefficient of resistance of palladium films in the thickness range 25-370 AA is reported. The Fuchs theoretical curve agrees with experimental alpha versus t curve for a specularity parameter p=0.88. The thickness dependence of the temperature coefficient of resistance gives the bulk mean free…

Semiconductor materials and devicesCopper Interconnects and ReliabilitySurface and Thin Film Phenomena

The effects of oxidation on the electrical conduction of polyethylene

T. Mizutani、Toshimichi Tsukahara、Masayuki Ieda1980-09-14Journal of Physics D Applied Physics

The effects of oxidation on the electrical conduction of low- and high-density polyethylene (LD-PE and HD-PE) have been studied. It has been found that oxidation enhances the carrier mobility in LD-PE, but lowers that in HD-PE. A qualitative explanation of these opposing effects is given, based on the assumption that…

Advanced Sensor and Energy Harvesting MaterialsPolymer crystallization and propertiesConducting polymers and applications

Discrete lattice effects in incommensurate systems

David A. Bruce1980-09-10Journal of Physics C Solid State Physics

The behaviour of systems which exhibit both commensurate and incommensurate phases is studied for a discrete lattice model. Close to the lock-in transition the incommensurate phase is shown to be well described by a soliton theory in which the solitons may be pinned to the lattice. This pinning effect leads to a 'devi…

Material Dynamics and PropertiesTheoretical and Computational PhysicsSpectroscopy and Quantum Chemical Studies

Raman scattering from layer-type magnets: (CH2)n(NH3)2CuCl4, n=2, 3 and 5

Zafar Iqbal、H. Arend、P. Wächter1980-09-10Journal of Physics C Solid State Physics

The Raman spectra of the layer-type magnetic materials of formula (CH 2 ) n (NH 3 ) 2 CuCl 4 , n=2, 3 and 5, have been measured at various temperatures above and below their respective magnetic ordering temperatures and in a magnetic field up to 10 kOe. For all three crystals, the Raman spectra excited at energies ran…

Magnetism in coordination complexesOrganic and Molecular Conductors ResearchSolid-state spectroscopy and crystallography

Boundary scattering of phonons in fine-grained hot-pressed Ge-Si alloys. II. Theory

N. Savvides、H J Goldsmid1980-09-10Journal of Physics C Solid State Physics

For pt.I see ibid., vol.13, p.4671 (1980). The theory of boundary scattering of phonons in crystals of small size that also display substantial point-defect scattering is summarised. It is then applied to the analysis of the previously presented experimental results on Ge 30 Si 70 at 300K and 600K and on Ge 70 Si 30 a…

Thermal properties of materialsComposite Material MechanicsThermography and Photoacoustic Techniques

Boundary scattering of phonons in fine-grained hot-pressed Ge-Si alloys. I. The dependence of lattice thermal conductivity on grain size and porosity

N. Savvides、H J Goldsmid1980-09-10Journal of Physics C Solid State Physics

The thermal conductivity of polycrystalline Ge 30 Si 70 has been determined at and above room temperature for samples having a wide range of porosity and mean grain diameter. It has been established that the thermal conductivity at 300K is completely dominated by the lattice contribution and that its value varies line…

Thermal properties of materialsThermography and Photoacoustic TechniquesThermal Radiation and Cooling Technologies

Radiological Characteristics of 219Rn

Darren Crawford1980-09-01Health Physics

Radiological surveys at some former uranium ore processing facilities have indicated the presence of significant quantities of 219 and its daughters. Due to the extremely short half-life of actinon, it has traditionally been assumed that its activity is negligible in comparison with 222Rn. This paper discusses the pro…

Radioactivity and Radon MeasurementsGraphite, nuclear technology, radiation studiesNuclear and radioactivity studies