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Band gaps and electronic structure of transition-metal compounds

J. Zaanen、G. A. Sawatzky、J. W. Allen1985-07-22OpenAlex

A new theory is presented for describing band gaps and electronic structures of transition-metal compounds. A theoretical phase diagram is presented in which both the metallic sulfides and insulating oxides and halides occur in a quite natural manner.

Magnetic and transport properties of perovskites and related materialsHeusler alloys: electronic and magnetic propertiesElectronic and Structural Properties of Oxides

Thermal conductivity under pressure and through phase transitions in solid alkali halides. II. Theory

Glen A. Slack、R. G. Ross1985-07-20Journal of Physics C Solid State Physics

For pt.I see ibid., vol.18, p.3943 (1985). The results in the preceding paper concerning the variation of the thermal conductivity, lambda , of six potassium and rubidium halides with temperature and pressure are analysed using a Leibfried-Schlomann formulation for the phonon-phonon scattering. The concept of a refere…

High-pressure geophysics and materialsSolid-state spectroscopy and crystallographyThermal Expansion and Ionic Conductivity

Neutron Diffraction Study on the Short-Range Order in ZrO0.30Interstitial Solid Solution

Yasuaki Sugizaki、S. Yamaguchi、Shinya Hashimoto 等 5 位作者1985-07-15Journal of the Physical Society of Japan

Short-range order parameters for oxygen arrangement in a single crystal of ZrO 0.30 quenched from above the order-disorder transition temperature were determined by measurements of elastic neutron diffuse scattering. The preferential configurations of vacancy-oxygen atom pair are found at the first and second neighbor…

Advanced ceramic materials synthesisAdvancements in Solid Oxide Fuel CellsNuclear Materials and Properties

Longitudinal Hall effect inSrAs3

W. Bauhofer1985-07-15Physical review. B, Condensed matter

An unusual first-order Hall effect with the magnetic field parallel either to the current or to the Hall field is observed in monoclinic semimetallic ${\mathrm{SrAs}}_{3}$. Data are presented showing the dependence of this longitudinal Hall effect (LHE) on orientation, temperature, and magnetic field strength. Both sy…

Physics of Superconductivity and MagnetismQuantum and electron transport phenomenaMagnetic and transport properties of perovskites and related materials

The role of activation energy distributions in diffusion related annealing in SiO2

R. A. B. Devine1985-07-15Journal of Applied Physics

Models for annealing processes in damaged, amorphous SiO2 are discussed. Using a series expansion approach, theories developed for diffusion-limited recombination are adapted to allow for a Gaussian distribution of activation energies. It is found that the effect of a distribution having deviation ΔE, and center EA ca…

Material Dynamics and PropertiesGlass properties and applicationsPhase-change materials and chalcogenides

Raman scattering by intervalley carrier-density fluctuations inn-type Si: Intervalley and intravalley mechanisms

R. Contreras、Anil K. Sood、M. Cardona1985-07-15Physical review. B, Condensed matter

We present an extensive study of Raman scattering by intervalley density fluctuations in n-type Si for a wide range of electron concentrations (8\ifmmode\times\else\texttimes\fi{}${10}^{18}$${\mathrm{eqN}}_{e}$${10}^{20}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$), temperatures (80--473 K), and laser frequencies (1.1…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceIon-surface interactions and analysis

Photophysics of a Zn(Cd)S phosphor on an extended time scale

Aditya Sharma、M. C. Palazzotto、M. R. V. Sahyun1985-07-15Journal of Applied Physics

We have studied the photophysics of a Zn(Cd)S:Ag phosphor, in powder form under ambient conditions, over a time domain extending from picoseconds to milliseconds. Pulsed laser luminescence techniques and time-resolved dielectric loss spectrometry have been employed. We propose mechanisms to interpret the results and c…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesPhotoreceptor and optogenetics research

Valence- and conduction-band structure of the sapphire (11¯02) surface

W. J. Gignac、R. Stanley Williams、Steven P. Kowalczyk1985-07-15Physical review. B, Condensed matter

X-ray photoelectron (XPS) and electron-energy-loss spectroscopies have been employed to investigate the valence- and conduction-band densities of states of the sapphire (11\ifmmode\bar\else\textasciimacron\fi{}02) surface. The photoemission spectrum of the valence-band region has been adjusted to remove cross-section…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesElectronic and Structural Properties of Oxides

Atomic structure of the Cu/Si(111) interface by high-energy core-level Auger electron diffraction

S. A. Chambers、S. B. Anderson、J. H. Weaver1985-07-15Physical review. B, Condensed matter

High-energy core-level Auger emission from adsorbed atoms on single-crystal surfaces is accompanied by diffraction and interference effects, similar to those observed in x-ray photoemission. We have used azimuthal anisotropies in the Cu(LMM) intensity at shallow polar angles and a kinematical scattering model to deter…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Optical properties and microstructure of gold–fluorocarbon-polymer composite films

J. Perrin、Bernard Despax、E. Kay1985-07-15Physical review. B, Condensed matter

The optical transmittance of plasma-deposited composite gold--fluorocarbon-polymer thin films is analyzed in terms of effective-medium theories. The effect of increasing gold volume fraction is shown to be correctly described by the Sheng model, provided the gold-cluster and polymer-inclusion sizes and shapes analyzed…

Semiconductor materials and devicesCopper Interconnects and ReliabilitySurface and Thin Film Phenomena

Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution

J. Massies、J. P. Contour1985-07-15Journal of Applied Physics

X-ray photoelectron spectroscopy has been performed in order to investigate the effects of the chemical etching of GaAs {001} surfaces by the H2SO4/H2O2/H2O solution used following the procedure currently practiced in the molecular-beam-epitaxy technique. It is demonstrated that, in contrast to what is generally belie…

Semiconductor materials and devicesAdvancements in Photolithography TechniquesElectron and X-Ray Spectroscopy Techniques

Green’s-function approach to nonlinear electronic transport for an electron-impurity-phonon system in a strong electric field

X. L. Lei、C. S. Ting1985-07-15Physical review. B, Condensed matter

A Green's-function approach to nonlinear electronic transport in a static electric field is developed microscopically for the system composed of interacting electrons with impurities and phonons. The essential idea is to separate the center-of-mass motion from the relative motion of electrons. An electron temperature…

Quantum and electron transport phenomenaMolecular Junctions and NanostructuresThermal properties of materials

Transient photoluminescence and excited-state optical absorption in trigonal selenium

Chunying Chen、M. A. Kastner、L. H. Robins1985-07-15Physical review. B, Condensed matter

The results of an investigation of the transient mid-gap photoluminescence (PL) and photo-induced optical absorption in trigonal Se are presented. Direct evidence is found for a barrier of 35\ifmmode\pm\else\textpm\fi{}5 meV to trapping of free excitons at the PL center. All the features of the PL, including the high-…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Absorption near band edges in heavily doped GaAs

W. Sritrakool、V. Sa‐yakanit、H. R. Glyde1985-07-15Physical review. B, Condensed matter

The optical-absorption coefficient \ensuremath{\alpha}(\ensuremath{\omega}) in heavily doped n- and p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME)…

Semiconductor Quantum Structures and DevicesZnO doping and propertiesQuantum and electron transport phenomena

Electronic structures of lithium metasilicate and lithium disilicate

W. Y. Ching、Yaping Li、B. W. Veal 等 4 位作者1985-07-15Physical review. B, Condensed matter

The electronic structures of lithium metasilicate (${\mathrm{Li}}_{2}$${\mathrm{SiO}}_{3}$) and lithium disilicate (${\mathrm{Li}}_{2}$${\mathrm{Si}}_{2}$${\mathrm{O}}_{5}$) are calculated using a first-principles orthogonalized linear combination of atomic-orbitals method. Results are compared with experimental x-ray…

Semiconductor materials and devicesX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques

5 D 3–5D4 cross relaxation in Tb3+ pairs in CsCdBr3 crystals

P.A.M. Berdowski、M.J.J. Lammers、G. Blasse1985-07-15The Journal of Chemical Physics

The 5D3–5D4 cross relaxation process of Tb3+ in CsCdBr3 has been evaluated by analysis of the decay curves of the 5D3 and 5D4 emission. The temperature dependence of the cross relaxation rate can be explained assuming phonon-assisted processes. The results show that the larger amount of Tb3+ ions is incorporated in pa…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsOptical properties and cooling technologies in crystalline materials

Temperature and stress dependence of Young’s modulus in semiconducting barium titanate ceramics

Gerhard Mader、H. Meixner、Peter Kleinschmidt1985-07-15Journal of Applied Physics

In order to study the temperature and stress dependence of Young’s modulus in semiconducting barium titanate ceramics, the longitudinal sound velocity was measured at a frequency of 5 MHz in the temperature range of 20–180 °C. It is striking that at temperatures above the Curie point (Tc=120 °C) the sound velocity rea…

Ferroelectric and Piezoelectric MaterialsAcoustic Wave Resonator TechnologiesThermal properties of materials

Dielectric response of a semi-infinite layered electron gas and Raman scattering from its bulk and surface plasmons

J. K. Jain、Philip B. Allen1985-07-15Physical review. B, Condensed matter

An exact solution of the random-phase-approximation equations is worked out for the density-density correlation function of a semi-infinite system of two-dimensional electron-gas layers, with different dielectrics outside and inside the layered system. From this solution, analytic formulas are derived for the dispersi…

Electron and X-Ray Spectroscopy TechniquesSurface Roughness and Optical MeasurementsSurface and Thin Film Phenomena

1/fnoise of metals: A case for extrinsic origin

John H. Scofield、J. V. Mantese、Watt W. Webb1985-07-15Physical review. B, Condensed matter

Small multiprobe resistors have been fabricated from continuous metal films of Ag, Al, Au, Cr, Cu, Mo, Nb, Ni, Pt, and W deposited under various conditions. Each shows some reproducible level of flicker (1/f) noise. This study implicates carrier scattering by extrinsic defects or impurities as the source of the resist…

Thermal properties of materialsAdvanced Thermodynamics and Statistical MechanicsSurface and Thin Film Phenomena