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Diffusion of Zn in α-Fe single crystals

I. Richter、Monika Feller‐Kniepmeier1981-11-16physica status solidi (a)

In the temperature range from 848 to 1169 K chemical diffusion coefficients of Zn in α-Fe are given for Zn concentrations between 0 and 12 at%. Above 1068 K the tracer diffusion coefficient (nzn → 0) can be described by an Arrhenius law with D0 = 60 cm2 s−1 and Q = 262.6 kJ mole−1. For lower temperatures the diffusion…

Microstructure and mechanical propertiesMagnetic Properties of AlloysAdvanced Materials Characterization Techniques

On the use of powder diffractometry in the study of phase transitions case of NaNO2

A. da Costa Lamas、Shih‐Lin Chang、S. Caticha-Ellis1981-11-16physica status solidi (a)

The phase transition of NaNO2, is investigated by using X-ray powder diffractometry. The temperature dependence of the lattice constants, peak intensities, and the order parameter of the ferroelectric phase, in the range of 27 to 200 °C, show the same results as obtained by using single-crystal diffractometry. These e…

Acoustic Wave Resonator TechnologiesSolid-state spectroscopy and crystallographyX-ray Diffraction in Crystallography

On the real structure of monocrystalline silicon near dislocation slip planes

I. E. Bondarenko、V. G. Eremenko、B. Ya. Farber 等 5 位作者1981-11-16physica status solidi (a)

The properties of regions swept by a moving dislocation in silicon crystals are experimentally studied. The peculiarities of forming traces of various types behind dislocations observed by electron microscopy and chemical etching are investigated. These traces are found to arise as result of point defect redistributio…

Microstructure and mechanical propertiesIon-surface interactions and analysisElectromagnetic Effects on Materials

Relation between theZ=64Shell Closure and the Onset of Deformation atN=88−90

R. F. Casten、D. D. Warner、D. S. Brenner 等 4 位作者1981-11-16Physical Review Letters

The systematics of the onset of deformation in the $N=88\ensuremath{-}90$ region is reexamined in light of the recently discovered shell closure at $Z=64$. It is shown that the microscopic explanation of the origin of deformation already proposed for the $A\ensuremath{\sim}100$ region is equally applicable here and le…

Advanced MRI Techniques and ApplicationsEnzyme Structure and FunctionSuperconducting Materials and Applications

Diffusion study of iodine and antimony pentafluoride in polyacetylene

C. Benoit、M. Rolland、M. Aldissi 等 6 位作者1981-11-16physica status solidi (a)

Polyacetylene (CH)z is a simple conjugated polymeric system, the electrical behaviour of which is considerably modified by doping processes: from an insulating behaviour it successively becomes semi-conducting and even metallic. In this work first the dopant profiles through the sample is measured and the macroscopic…

Ionic liquids properties and applicationsConducting polymers and applicationsElectrochemical Analysis and Applications

Photoconductivity and charge trapping inα−Al2O3

B. J. Jeffries、J. D. Brewer、G.P. Summers1981-11-15Physical review. B, Condensed matter

An electron trap which strongly affects the photoconductivity of colored $\ensuremath{\alpha}\ensuremath{-}{\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ has been investigated from 10 to 300 K. The trap, which also causes the 260-K thermoluminescence peak and makes possible the interconversion of $F$ and ${F}^{+}$ centers by opti…

Luminescence Properties of Advanced MaterialsGa2O3 and related materialsElectronic and Structural Properties of Oxides

XeF2 photodissociation studies. I. Quantum yields and kinetics of XeF(B) and XeF(C)

G. Black、R. L. Sharpless、D. C. Lorents 等 8 位作者1981-11-15The Journal of Chemical Physics

Photodissociation of XeF2 with synchrotron light pulses (0.3 ns duration) has been used as the source of the XeF(B, C, and D) excited states. The time-resolved profiles of the intensity of the resulting fluorescence have been recorded and partially analyzed. Most of the measurements were made in the strong XeF2 absorp…

Advanced Chemical Physics StudiesLuminescence Properties of Advanced MaterialsInorganic Fluorides and Related Compounds

The two-dimensional Lennard-Jones system: Sublimation, vaporization, and melting

James M. Phillips、L. W. Bruch、R. D. Murphy1981-11-15The Journal of Chemical Physics

The solid–vapor equilibrium line and the liquid–vapor equilibrium line near the melting region for classical two-dimensional systems of particles interacting by Lennard-Jones (12,6) pair potentials are determined from Monte Carlo simulations with 224 particles. Structural and thermodynamic properties are evaluated for…

Phase Equilibria and ThermodynamicsMaterial Dynamics and Propertiesnanoparticles nucleation surface interactions

Statistics of multicharge centers in semiconductors: Applications

D. C. Look1981-11-15Physical review. B, Condensed matter

A general formula is derived for the electron occupation numbers appropriate for multicharge centers in semiconductors, including excited states. The results are used to rederive and generalize several formulas of interest in the literature, in order to show exactly how the degeneracies of individual states enter in.…

Semiconductor Quantum Structures and DevicesPhase-change materials and chalcogenidesSemiconductor materials and interfaces

Theoretical study of the electronic structure ofSiOx

E. Martínez、Félix Ynduráin1981-11-15Physical review. B, Condensed matter

A theoretical study of the electronic structure of amorphous $\mathrm{Si}{\mathrm{O}}_{x}$ is performed. The calculation is done using a realistic tight-binding Hamiltonian for a cluster-Bethe-lattice model. Results of the calculations are in good agreement with optical-absorption measurements for the entire range of…

Material Dynamics and PropertiesGlass properties and applicationsTheoretical and Computational Physics

Quantum statistical mechanical model for polarizable fluids

J. S. Ho ye、G. Stell1981-11-15The Journal of Chemical Physics

The quantum statistical mechanics of a polarizable fluid model is considered using a path-integral approach. The quantum mechanical partition function associated with the internal degrees of freedom of each molecule is approximated by a classical partition function of a polymer ring, while the center-of-mass motion of…

Material Dynamics and PropertiesSpectroscopy and Quantum Chemical StudiesQuantum, superfluid, helium dynamics

Photon-stimulated desorption and other spectroscopic studies of the interaction of oxygen with a titanium (001) surface

David M. Hanson、Roger Stockbauer、Theodore E. Madey1981-11-15Physical review. B, Condensed matter

Synchrotron radiation at the Synchrotron Ultraviolet Radiation Facility at the National Bureau of Standards has been employed to study the adsorption of oxygen on a Ti(001) surface using photon-stimulated desorption (PSD), electron-stimulated desorption (ESD), and ultraviolet photoemission spectroscopy (UPS). The domi…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesIon-surface interactions and analysis

Ground-state properties of diamond

M. T. Yin、Marvin L. Cohen1981-11-15Physical review. B, Condensed matter

The ground-state properties of diamond are investigated using an ab initio density-functional pseudopotential scheme. The calculated equilibrium lattice constant, cohesive energy, and bulk modulus are in excellent agreement with experiment. Unlike Si, a double hump is found in the valence-electron charge density along…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of Oxides

New tight-binding parameters for covalent solids obtained using Louie peripheral states

Walter A. Harrison1981-11-15Physical review. B, Condensed matter

Excited $s$ states are added to the minimal-basis tight-binding theory of covalent solids using Louie's perturbation approach. This brings the conduction bands into better accord with experiment without appreciably complicating the calculation of properties in the bond-orbital approximation. Universal interatomic matr…

Advanced Chemical Physics StudiesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films

New model of the irradiation-induced 0.97-eV (G) line in silicon: ACS−Si*complex

K. Thonke、H. Klemisch、J. Weber 等 4 位作者1981-11-15Physical review. B, Condensed matter

We report on a high-resolution photoluminescence and absorption study with the application of external stress and magnetic fields on the 0.97-eV ($G$) line. We determine the symmetry of the related center to be monoclinic $I$. It is shown that satellite lines $E$, ${E}^{\ensuremath{'}}$, and ${E}^{*}$, which are obser…

Glass properties and applicationsSilicon Nanostructures and PhotoluminescenceX-ray Spectroscopy and Fluorescence Analysis

Elastic and flow properties of biaxial nematics

A. Saupe1981-11-15The Journal of Chemical Physics

Elastic and hydrodynamic properties of biaxial nematics of D2 symmetry are theoretically studied. The treatment follows closely the classical formalism used for solids which is extended by inclusion of director fields. The resulting theory is a generalization of the well-established theory of uniaxial nematics. The el…

Liquid Crystal Research AdvancementsAdvanced Materials and MechanicsPickering emulsions and particle stabilization

Light emission from tunnel junctions on gratings

J. R. Kirtley、Thomas Theis、J. C. Tsang1981-11-15Physical review. B, Condensed matter

We present measurements of light emission from Al-${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$-Ag tunnel junctions on holographically produced, sinusoidal profile gratings. Sharp angle tunable emission peaks result from coupling out of the Ag-vacuum fast surface-plasmon polariton by the grating structure. The dependences of…

Plasmonic and Surface Plasmon ResearchOptical Coatings and GratingsSurface and Thin Film Phenomena

Photoionisation of inner shells

M. Ya. Amusia、V. K. Ivanov、V. A. Kupchenko1981-11-14Journal of Physics B Atomic and Molecular Physics

A method is proposed for calculating the photoionisation cross sections of many-electron atoms near the ionisation threshold of an inner shell. The method takes into account the variation of the field in which a photoelectron moves due to creation of a deep vacancy and its decay. For example the cross section of the 1…

Mass Spectrometry Techniques and ApplicationsElectron and X-Ray Spectroscopy TechniquesPhotocathodes and Microchannel Plates

Dielectric strength of hexafluoropropylene (C3F6)

Th. Aschwanden、G. Biasiutti1981-11-14Journal of Physics D Applied Physics

The dielectric strength of hexafluoropropylene has been investigated under breakdown and prebreakdown conditions in the pressure range from 0.07 to 2 bar. Breakdown voltages measured in a uniform field gap have been found to be in good agreement with intrinsic dielectric strength evaluated from measurements of net ion…

High voltage insulation and dielectric phenomenaPower Transformer Diagnostics and InsulationScientific Measurement and Uncertainty Evaluation

The influence of the number of unoccupied 3d states on the L3M4,5M4,5Auger spectrum of Ni

P T Andrews、T. L. D. Collins、P. Weightman1981-11-10Journal of Physics C Solid State Physics

The Ni L 2,3 M 4,5 M 4,5 Auger spectra, the conduction band X-ray photoemission spectra and the Ni 2p 3/2 X-ray photoemission spectra have been measured for Ni, Ni 50 Zn 50 , Ni 20 Zn 80 and Ni 50 Al 50 . The shape of the L 3 M 4,5 M 4,5 Auger spectrum changes as the band structure of the alloy changes in a way which…

Semiconductor materials and interfacesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena