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Direct determination of electron band energies by transmission interference in thin films

G. Perluzzo、G. Bader、L. G. Caron 等 4 位作者1985-07-29Physical Review Letters

By analyzing interference structures in low-energy electron-transmission spectra, we made a direct experimental determination of the electronic band structure in the (111) direction of argon films and possibly in the same direction for methane films in the energy range 0--10 eV relative to vacuum.

Advanced Chemical Physics StudiesSemiconductor materials and devicesElectron and X-Ray Spectroscopy Techniques

New ordered state between crystalline and amorphous in Ni-Cr particles

T. Ishimasa、H.‐U. Nissen、Yasushige Fukano1985-07-29OpenAlex

A new ordered state characterized by sharp electron diffraction spots showing an arrangement with a twelvefold symmetry axis inconsistent with the existence of a Bravais lattice has been found in small particles of Ni-Cr. Electron microscopic high-resolution structure images of these particles reveal that this orderin…

Metallic Glasses and Amorphous AlloysQuasicrystal Structures and Propertiesnanoparticles nucleation surface interactions

The Crystallization of Ultralong Normal Paraffins: The Onset of Chain Folding

Goran Ungar、J. Stejny、A. Keller 等 5 位作者1985-07-26OpenAlex

The nature of chain folding in polymers and the determination of the chain length at which folding occurs have been central questions in polymer science. The study of the formation of lamellar polymer crystals through chain folding has received a new impetus as a result of the recent synthesis of normal alkanes of str…

Polymer crystallization and propertiesPolymer Nanocomposites and PropertiesPolymer composites and self-healing

Clay mineral precipitation and transformation during burial diagenesis

C. D. Curtis1985-07-25Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences

Abstract Detrital clay minerals alter systematically during burial diagenesis. Smectites evolve via intermediate ‘illite-smectites’ to illite. Trioctahedral ‘smectite-chlorites’ or ‘vermiculite-chlorites’ evolve towards true (polytype Ib) chlorites. In other reactions, authigenic clays (kaolinite, illite, chlorite) pr…

Soil and Unsaturated FlowClay minerals and soil interactionsIron oxide chemistry and applications

Band gaps and electronic structure of transition-metal compounds

J. Zaanen、G. A. Sawatzky、J. W. Allen1985-07-22OpenAlex

A new theory is presented for describing band gaps and electronic structures of transition-metal compounds. A theoretical phase diagram is presented in which both the metallic sulfides and insulating oxides and halides occur in a quite natural manner.

Magnetic and transport properties of perovskites and related materialsHeusler alloys: electronic and magnetic propertiesElectronic and Structural Properties of Oxides

Thermal conductivity under pressure and through phase transitions in solid alkali halides. II. Theory

Glen A. Slack、R. G. Ross1985-07-20Journal of Physics C Solid State Physics

For pt.I see ibid., vol.18, p.3943 (1985). The results in the preceding paper concerning the variation of the thermal conductivity, lambda , of six potassium and rubidium halides with temperature and pressure are analysed using a Leibfried-Schlomann formulation for the phonon-phonon scattering. The concept of a refere…

High-pressure geophysics and materialsSolid-state spectroscopy and crystallographyThermal Expansion and Ionic Conductivity

Neutron Diffraction Study on the Short-Range Order in ZrO0.30Interstitial Solid Solution

Yasuaki Sugizaki、S. Yamaguchi、Shinya Hashimoto 等 5 位作者1985-07-15Journal of the Physical Society of Japan

Short-range order parameters for oxygen arrangement in a single crystal of ZrO 0.30 quenched from above the order-disorder transition temperature were determined by measurements of elastic neutron diffuse scattering. The preferential configurations of vacancy-oxygen atom pair are found at the first and second neighbor…

Advanced ceramic materials synthesisAdvancements in Solid Oxide Fuel CellsNuclear Materials and Properties

Longitudinal Hall effect inSrAs3

W. Bauhofer1985-07-15Physical review. B, Condensed matter

An unusual first-order Hall effect with the magnetic field parallel either to the current or to the Hall field is observed in monoclinic semimetallic ${\mathrm{SrAs}}_{3}$. Data are presented showing the dependence of this longitudinal Hall effect (LHE) on orientation, temperature, and magnetic field strength. Both sy…

Physics of Superconductivity and MagnetismQuantum and electron transport phenomenaMagnetic and transport properties of perovskites and related materials

The role of activation energy distributions in diffusion related annealing in SiO2

R. A. B. Devine1985-07-15Journal of Applied Physics

Models for annealing processes in damaged, amorphous SiO2 are discussed. Using a series expansion approach, theories developed for diffusion-limited recombination are adapted to allow for a Gaussian distribution of activation energies. It is found that the effect of a distribution having deviation ΔE, and center EA ca…

Material Dynamics and PropertiesGlass properties and applicationsPhase-change materials and chalcogenides

Raman scattering by intervalley carrier-density fluctuations inn-type Si: Intervalley and intravalley mechanisms

R. Contreras、Anil K. Sood、M. Cardona1985-07-15Physical review. B, Condensed matter

We present an extensive study of Raman scattering by intervalley density fluctuations in n-type Si for a wide range of electron concentrations (8\ifmmode\times\else\texttimes\fi{}${10}^{18}$${\mathrm{eqN}}_{e}$${10}^{20}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$), temperatures (80--473 K), and laser frequencies (1.1…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceIon-surface interactions and analysis

Photophysics of a Zn(Cd)S phosphor on an extended time scale

Aditya Sharma、M. C. Palazzotto、M. R. V. Sahyun1985-07-15Journal of Applied Physics

We have studied the photophysics of a Zn(Cd)S:Ag phosphor, in powder form under ambient conditions, over a time domain extending from picoseconds to milliseconds. Pulsed laser luminescence techniques and time-resolved dielectric loss spectrometry have been employed. We propose mechanisms to interpret the results and c…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesPhotoreceptor and optogenetics research

Valence- and conduction-band structure of the sapphire (11¯02) surface

W. J. Gignac、R. Stanley Williams、Steven P. Kowalczyk1985-07-15Physical review. B, Condensed matter

X-ray photoelectron (XPS) and electron-energy-loss spectroscopies have been employed to investigate the valence- and conduction-band densities of states of the sapphire (11\ifmmode\bar\else\textasciimacron\fi{}02) surface. The photoemission spectrum of the valence-band region has been adjusted to remove cross-section…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesElectronic and Structural Properties of Oxides

Atomic structure of the Cu/Si(111) interface by high-energy core-level Auger electron diffraction

S. A. Chambers、S. B. Anderson、J. H. Weaver1985-07-15Physical review. B, Condensed matter

High-energy core-level Auger emission from adsorbed atoms on single-crystal surfaces is accompanied by diffraction and interference effects, similar to those observed in x-ray photoemission. We have used azimuthal anisotropies in the Cu(LMM) intensity at shallow polar angles and a kinematical scattering model to deter…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Optical properties and microstructure of gold–fluorocarbon-polymer composite films

J. Perrin、Bernard Despax、E. Kay1985-07-15Physical review. B, Condensed matter

The optical transmittance of plasma-deposited composite gold--fluorocarbon-polymer thin films is analyzed in terms of effective-medium theories. The effect of increasing gold volume fraction is shown to be correctly described by the Sheng model, provided the gold-cluster and polymer-inclusion sizes and shapes analyzed…

Semiconductor materials and devicesCopper Interconnects and ReliabilitySurface and Thin Film Phenomena

Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution

J. Massies、J. P. Contour1985-07-15Journal of Applied Physics

X-ray photoelectron spectroscopy has been performed in order to investigate the effects of the chemical etching of GaAs {001} surfaces by the H2SO4/H2O2/H2O solution used following the procedure currently practiced in the molecular-beam-epitaxy technique. It is demonstrated that, in contrast to what is generally belie…

Semiconductor materials and devicesAdvancements in Photolithography TechniquesElectron and X-Ray Spectroscopy Techniques

Green’s-function approach to nonlinear electronic transport for an electron-impurity-phonon system in a strong electric field

X. L. Lei、C. S. Ting1985-07-15Physical review. B, Condensed matter

A Green's-function approach to nonlinear electronic transport in a static electric field is developed microscopically for the system composed of interacting electrons with impurities and phonons. The essential idea is to separate the center-of-mass motion from the relative motion of electrons. An electron temperature…

Quantum and electron transport phenomenaMolecular Junctions and NanostructuresThermal properties of materials

Transient photoluminescence and excited-state optical absorption in trigonal selenium

Chunying Chen、M. A. Kastner、L. H. Robins1985-07-15Physical review. B, Condensed matter

The results of an investigation of the transient mid-gap photoluminescence (PL) and photo-induced optical absorption in trigonal Se are presented. Direct evidence is found for a barrier of 35\ifmmode\pm\else\textpm\fi{}5 meV to trapping of free excitons at the PL center. All the features of the PL, including the high-…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Absorption near band edges in heavily doped GaAs

W. Sritrakool、V. Sa‐yakanit、H. R. Glyde1985-07-15Physical review. B, Condensed matter

The optical-absorption coefficient \ensuremath{\alpha}(\ensuremath{\omega}) in heavily doped n- and p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME)…

Semiconductor Quantum Structures and DevicesZnO doping and propertiesQuantum and electron transport phenomena

Electronic structures of lithium metasilicate and lithium disilicate

W. Y. Ching、Yaping Li、B. W. Veal 等 4 位作者1985-07-15Physical review. B, Condensed matter

The electronic structures of lithium metasilicate (${\mathrm{Li}}_{2}$${\mathrm{SiO}}_{3}$) and lithium disilicate (${\mathrm{Li}}_{2}$${\mathrm{Si}}_{2}$${\mathrm{O}}_{5}$) are calculated using a first-principles orthogonalized linear combination of atomic-orbitals method. Results are compared with experimental x-ray…

Semiconductor materials and devicesX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques