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Electronic structure of the MoFe3S4(SH)3−6 ion: A broken-symmetry metal–sulfur cluster

Michael Cook、Martin Karplus1985-12-15The Journal of Chemical Physics

A set of MS-Xα calculations on the MoFe3S4 (SH)3−6 ion is reported. Three levels of theoretical models are considered: spin-restricted, C3v symmetry, which is most easily compared with the traditional ligand-field picture; spin-polarized, C3v symmetry; and spin-polarized, Cs symmetry. An MS=3/2 ground state correspond…

Magnetism in coordination complexesMetalloenzymes and iron-sulfur proteinsInorganic Chemistry and Materials

Material dispersion in high optical quality heavy metal fluoride glasses

Richard N. Brown、J.J. Hutta1985-12-15Applied Optics

The results of refractive-index measurements in ZrF4–BaF2–LaF3–AlF3 glass and the effects of the addition of NaF are described. The dispersion properties are not enhanced by the addition of NaF, as shown by increased material dispersion M at long wavelengths and decreased crossover wavelength λ0.

Luminescence Properties of Advanced MaterialsGlass properties and applicationsSurface Roughness and Optical Measurements

Model for the chromatic properties of gradient-index glass

Danette P. Ryan-Howard、Duncan T. Moore1985-12-15Applied Optics

A model has been developed which predicts the chromatic properties of gradient-index materials based on the composition of the glass. It yields a gradient Abbe number and a gradient partial dispersion which can be used by the lens designer in the design of achromatic gradient-index lens systems. Over 100 glasses with…

Glass properties and applicationsAdvanced optical system design

Hopping theory of band-tail relaxation in disordered semiconductors

M. Grünewald、B. Movaghar、B. Pohlmann 等 4 位作者1985-12-15Physical review. B, Condensed matter

Within a new theoretical approach the current and energy decay in amorphous semiconductors is studied. The relaxation of photoexcited carriers observed by transient photoconductivity experiments in amorphous silicon and chalcogenides can well be described by an algebraic power-law decay. The theoretical explanation is…

Material Dynamics and PropertiesThin-Film Transistor TechnologiesPhase-change materials and chalcogenides

Surface core-level shifts for clean and halogen-covered Ge(100) and Ge(111)

R.D. Schnell、F. J. Himpsel、A. Bogen 等 5 位作者1985-12-15Physical review. B, Condensed matter

The intensity and energy shift of the Ge 3d surface core-level photoemission is determined with the use of synchrotron radiation. Cl- and Br-terminated Ge(111)?(hy(1\ifmmode\times\else\texttimes\fi{}1) surfaces are used to calibrate the absolute coverage CTHETA and to obtain accurate line shapes. We find binding-energ…

Advanced Chemical Physics StudiesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Electronic properties and bonding sites for chlorine chemisorption on Si(111)-(7×7)

R.D. Schnell、D. Rieger、A. Bogen 等 6 位作者1985-12-15Physical review. B, Condensed matter

The adsorption of chlorine on Si(111)-(7\ifmmode\times\else\texttimes\fi{}7) has been studied with various photoemission techniques with the use of synchrotron radiation. At room temperature, bonding of one, two, and three chlorine atoms to a Si surface atom was observed with Si 2p core-level shifts of 930, 1830, and…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesIon-surface interactions and analysis

Weak localization and anharmonicity of phonons

Éric Akkermans、R. Maynard1985-12-15Physical review. B, Condensed matter

The problem of localization of phonons in disordered materials is studied in the framework of the weak-localization theory. Quantum correction to phonon diffusion is calculated by the resummation technique of maximally crossed diagrams in two and three dimensions. The strong energy dependence of the elastic mean free…

Quantum and electron transport phenomenaMaterial Dynamics and PropertiesThermal properties of materials

Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study

J. González‐Hernández、G. Hossein Azarbayejani、Raphael Tsu 等 4 位作者1985-12-15Applied Physics Letters

The structure of molecular beam deposited microcrystalline silicon and germanium films prepared under different growth conditions has been analyzed by conventional transmission electron microscope (TEM) and Raman scattering (RS) and compared to electrical conductivity experiments. The TEM measurements yield an average…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Optical Investigations of Rare-Earth Orthochromites. II. RCrO3(R=Er, Ho, Dy and Tb)

Norimichi Kojima、Ikuji Tsujikawa、Kiyoshi Aoyagi 等 4 位作者1985-12-15Journal of the Physical Society of Japan

Optical absorption spectra corresponding to the 4 A 2 g → 2 E g transition of Cr 3+ in RCrO 3 (R=Er, Ho, Dy and Tb) were investigated. The exciton lines ( R ) with Davydov splitting, and an electric dipole band ( R ') at lower energy side were observed in all compounds. From the temperature and external magnetic field…

Magnetic and transport properties of perovskites and related materialsMultiferroics and related materialsSolid-state spectroscopy and crystallography

On the Theory of Secondary Electron Emission

Eiiti Tamura1985-12-15Journal of the Physical Society of Japan

The theory of secondary electron emission (SEE), which was proposed by Feder and Pendry, is extended. The new argument allows us to predict not only the fine structure but also all the features of SEE spectra. The secondary electron current is described as a multiplication of the fine structure part, which is easily o…

Advanced Chemical Physics StudiesSemiconductor materials and devicesElectron and X-Ray Spectroscopy Techniques

Comparison of two techniques in the theory of phonon-induced cyclotron resonance line shapes

Jai Yon Ryu、Yeon Choon Chung、Sang Don Choi1985-12-15Physical review. B, Condensed matter

Two perturbation methods are compared for the theories of the cyclotron resonance line shape for electron-phonon systems. The line-shape functions in schemes designated as ``moderately weak coupling'' and ``extremely weak coupling'' by Choi and Chung are obtained using Mori's method of calculation. The results agree e…

Magnetic Properties and ApplicationsNuclear Physics and ApplicationsThermodynamic and Structural Properties of Metals and Alloys

Electron and hole impact ionization coefficients in (100) and in (111) Si

V. M. Robbins、T. Wang、Kevin F. Brennan 等 5 位作者1985-12-15Journal of Applied Physics

The impact ionization coefficients for electrons and holes in both (100)- and (111)-oriented Si have been determined from photocurrent measurements performed on reach-through avalanche photodiodes. The results for both orientations are similar, indicating that the ionization coefficients are isotropic. Monte Carlo cal…

Nuclear Physics and ApplicationsElectron and X-Ray Spectroscopy TechniquesIon-surface interactions and analysis

Submillimeter and millimeter wave characterization of absorbing materials

Hamid Hemmati、John C. Mather、William L. Eichhorn1985-12-15Applied Optics

Several microwave absorbers have been characterized in terms of transmittance and reflectance at frequencies between 35 GHz and 3 THz. The materials studied were a series of iron-loaded cast epoxy absorbers known as Eccosorb. Measurements show that reflectance and absorption coefficient increase with the iron density.…

Electromagnetic wave absorption materialsMicrowave and Dielectric Measurement TechniquesElectromagnetic Compatibility and Measurements

Microscopic Theory of the CDW State of 1T-TiSe2

Naoshi Suzuki、Atsushi Yamamoto、Kazuko Motizuki1985-12-15Journal of the Physical Society of Japan

Physical properties of the CDW state of 1 T -TiSe 2 such as electronic band structures are investigated on the basis of the band-type Jahn-Teller model by extending our microscopic theory of lattice instability in the normal phase. The results are summarized as follows: (i) The triple- q CDW state is more stable than…

Perovskite Materials and Applications2D Materials and ApplicationsOrganic and Molecular Conductors Research

Frequency-dependent conductivity in sputtered amorphous phosphorus thin films

P. Extance、S. R. Elliott、E. A. Davis1985-12-15Physical review. B, Condensed matter

The first measurements are reported of frequency-dependent (ac) conductivity in thin films of amorphous phosphorus prepared by rf sputtering. The behavior of the ac conductivity \ensuremath{\sigma}(\ensuremath{\omega}) is broadly similar to that which has been observed previously in many other types of amorphous semic…

Glass properties and applicationsThin-Film Transistor TechnologiesPhase-change materials and chalcogenides

Electronic structure of crystalline and amorphous silicon dioxide

Raju P. Gupta1985-12-15Physical review. B, Condensed matter

The electronic structure of \ensuremath{\alpha}-quartz and a-${\mathrm{SiO}}_{2}$ has been calculated using the tight-binding recursion method. For a-${\mathrm{SiO}}_{2}$ two structural models were used. The first one consisted of the continuous-random-network model constructed by Bell and Dean (BD). The second model…

Glass properties and applicationsPhotonic Crystals and ApplicationsSilicon Nanostructures and Photoluminescence

Structure and motion of hydrogen in molybdenum bronzes HxMoO3 as studied by nuclear magnetic resonance

Cl. Ritter、W. Müller‐Warmuth、R. Schöllhorn1985-12-15The Journal of Chemical Physics

1H NMR solid state techniques have been used to study bonding properties, location, and mobility of hydrogen in various phases of the hydrogen bronze HxMoO3. Temperature-dependent spectra characteristic of different degrees of intercalation have been observed, and furthermore, from measurements of the relaxation rate,…

Advanced NMR Techniques and ApplicationsSolid-state spectroscopy and crystallographyNMR spectroscopy and applications

Electron-energy-loss spectroscopy of multilayered materials: Theoretical aspects and study of interface optical phonons in semiconductor superlattices

Ph. Lambin、J. P. Vigneron、A. A. Lucas1985-12-15Physical review. B, Condensed matter

The dielectric theory of electron-energy-loss spectroscopy (EELS) in the reflection geometry is reformulated so as to allow for an arbitrary compositional variation of the target material in the direction perpendicular to its surface. A new, general expression for the energy-loss spectrum is obtained in terms of an ex…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films

Angle-resolved ultraviolet photoelectron spectroscopy of the unoccupied band structure of graphite

Takahiro Takahashi、H. Tokailin、Takahiro Sagawa1985-12-15Physical review. B, Condensed matter

The energy dispersion of conduction (or unoccupied) bands of graphite has been studied by angle-resolved ultraviolet photoelectron spectroscopy. Photoemission peaks originating in the conduction bands were successfully separated from those of the valence bands by comparing two sets of angle-resolved ultraviolet photoe…

Graphene research and applicationsElectron and X-Ray Spectroscopy TechniquesGraphite, nuclear technology, radiation studies

An analysis of the current in a point-to-plane corona discharge and the effect of a back-ionising layer on the plane

Jean Cross1985-12-14Journal of Physics D Applied Physics

The increase in the current that flows in a negative point-to-plane corona discharge when a porous layer is present on the plane was studied by using a fast storage oscilloscope. It was found that the current increase is due primarily to an increase in the frequency of the Trichel pulses at the cathode, and less than…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaAerosol Filtration and Electrostatic Precipitation