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Phase transitions in the MnAs1-xSbx alloy system

G. A. Govor、K. Bärner、J.‐W. Schünemann1989-06-16physica status solidi (a)

Single crystals of a continuous series of MnAs1-xSbx solid solutions are obtained and their crystal structure and magnetic properties are investigated in the temperature range from 150 to 600 K. It is shown that the crystal structure of MnAs, MnSb, and alloys with a small content of Sb and As, respectively, is charact…

Magnetic and transport properties of perovskites and related materialsRare-earth and actinide compoundsHeusler alloys: electronic and magnetic properties

Implantation of Vascular Grafts Lined with Genetically Modified Endothelial Cells

James M. Wilson、Louis K. Birinyi、Robert Salomon 等 6 位作者1989-06-16Science

The possibility of using the vascular endothelial cell as a target for gene replacement therapy was explored. Recombinant retroviruses were used to transduce the lacZ gene into endothelial cells harvested from mongrel dogs. Prosthetic vascular grafts seeded with the genetically modified cells were implanted as carotid…

Electrospun Nanofibers in Biomedical ApplicationsCongenital heart defects researchAnimal Genetics and Reproduction

Excitonic states in pure and impurity-doped magnesium oxide

Ravindra Pandey、Jun Zuo、A. Barry Kunz1989-06-15Physical review. B, Condensed matter

Excitonic states in pure and anion-impurity-doped MgO are investigated in several well-defined models using unrestricted Hartree-Fock (UHF)/icecap (ionic crystal with electronic cluster, automatic program) simulation procedures. The calculated excitation energies in pure MgO are in excellent agreement with the experim…

High-pressure geophysics and materialsMagnetic and transport properties of perovskites and related materialsCrystal Structures and Properties

Structure of tin hafnium sulfide and lead hafnium sulfide

G.A. Wiegers、Auke Meetsma、R.J. Haange 等 4 位作者1989-06-15Acta Crystallographica Section C Crystal Structure Communications

SnHfS 3, M r = 393.36, orthorhombic, Pnma, a=9.139(1), b=3.694(1), c--13.875(4) A, V= 468.4 (2) ,/k 3, Z = 4, D x = 5.578 g cm 3, 2(Mo Kii) = 0.71073 ,~, g= 284.1 cm -~, F(000) 680, T= 298 K, R r=0.036 for 1301 observed reflections with I >_ 2.5tr(I). PbHfS 3, Mr = 481.88, orthorhombic, Pnma, a = 8.988 (2), b = 3-7…

Crystal Structures and PropertiesSolid-state spectroscopy and crystallographyInorganic Chemistry and Materials

Observation of an intrinsic5×5reconstruction on the clean Si(111) surface

R. I. G. Uhrberg、E. Landemark、L. S. O. Johansson1989-06-15Physical review. B, Condensed matter

Low-temperature annealing of the cleaved Si(111)2\ifmmode\times\else\texttimes\fi{}1 surface revealed the existence of an intrinsic 5\ifmmode\times\else\texttimes\fi{}5 reconstruction on the clean Si(111) surface. The electronic structure of the Si(111)5\ifmmode\times\else\texttimes\fi{}5 surface, obtained with angle-…

Electron and X-Ray Spectroscopy TechniquesIon-surface interactions and analysisSurface and Thin Film Phenomena

Structures of sodium alumino-germanate sodalites [Na8(Al6Ge6O24)A2, A = Cl, Br, I]

Michael E. Fleet1989-06-15Acta Crystallographica Section C Crystal Structure Communications

Na 8 (Al 6 Ge 6 O 24 )Cl 2 cristallise dans P43n avec affinement jusqu'a 0,013. Na 8 (Al 6 Ge 6 O 24 )Br 2 cristallise dans P43n avec affinement jusqu'a 0,019. Na 8 (Al 6 Ge 6 O 24 )I 2 cristallise dans P43n avec affinement jusqu'a 0,016

Zeolite Catalysis and SynthesisCrystal Structures and PropertiesSolid-state spectroscopy and crystallography

Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. I. Electronic relaxation processes

G. G. B. de Souza、Paul Morin、I. Nenner1989-06-15The Journal of Chemical Physics

The photoelectron and Auger spectra of SiF4 have been measured, using synchrotron radiation in the 100 to 125 eV photon energy range in the vicinity of the Si2p ionization threshold. Partial photoionization cross sections have been obtained for outer, inner valence states and satellite states in the same energy range,…

Advanced Chemical Physics StudiesX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques

Y, Ba, Cu, and Ti interface reactions with SrTiO3 (100) surfaces

D. M. Hill、Harry M. Meyer、J. H. Weaver1989-06-15Journal of Applied Physics

Interface reactions of adatoms of Y, Ba, Cu, and Ti with ordered and disordered SrTiO3 (100) surfaces were examined with x-ray photoemission spectroscopy, Auger spectroscopy, and low-energy electron diffraction. Atomic distributions for these interfaces before and after annealing at 500 °C were determined using Ar ion…

Semiconductor materials and devicesElectronic and Structural Properties of OxidesSurface and Thin Film Phenomena

ac impedance measurements and V-I characteristics for Co-, Mn-, or Bi-doped ZnO

Agnès Smith、Jean‐François Baumard、P. Abélard 等 4 位作者1989-06-15Journal of Applied Physics

ZnO has been doped with various oxides, mainly bismuth, cobalt, and manganese oxides. The aim of the present approach is to look at the influence of each dopant on the electrical behavior of ZnO in a system which is more simple and chemically purer in comparison with commercial varistors. It appears that cobalt or man…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsTransition Metal Oxide Nanomaterials

The effects of substrate roughness on ultrathin water films

Stephen Garoff、E. B. Sirota、S. K. Sinha 等 4 位作者1989-06-15The Journal of Chemical Physics

Real surfaces are rough and chemically heterogeneous on many length scales and wetting phenomena on these surfaces are affected by this inhomogeneous nature. We have used x-ray reflectivity to examine the structure of static precursing films which precede the macroscopic meniscus of water on glass. We have examined th…

Surface Modification and SuperhydrophobicityPhase Equilibria and Thermodynamicsnanoparticles nucleation surface interactions

Calculated electronic structure and magnetic properties of Y-Fe compounds

R. Coehoorn1989-06-15Physical review. B, Condensed matter

Results of self-consistent ab initio band-structure calculations using the augmented--spherical-wave method are presented for the stable intermetallic compounds ${\mathrm{Y}}_{2}$${\mathrm{Fe}}_{17}$, ${\mathrm{Y}}_{6}$${\mathrm{Fe}}_{23}$, ${\mathrm{YFe}}_{3}$, and ${\mathrm{YFe}}_{2}$ and for the hypothetical compou…

Magnetic properties of thin filmsRare-earth and actinide compoundsMagnetic Properties of Alloys

Rigorous 3-D coupled wave diffraction analysis of multiple superposed gratings in anisotropic media

Elias N. Glytsis、Thomas K. Gaylord1989-06-15Applied Optics

The diffraction by two planar slanted fringe gratings superposed in the same volume of an anisotropic medium is treated using rigorous 3-D vector coupled wave analysis. Arbitrary angle of incidence and polarization are included. Both phase and/or amplitude slanted gratings in anisotropic media are treated in the analy…

Photonic and Optical DevicesPhotorefractive and Nonlinear OpticsOptical Coatings and Gratings

Laser processing of a SiC/Al-alloy metal matrix composite

Narendra B. Dahotre、T. D. McCay、Mary Helen McCay1989-06-15Journal of Applied Physics

Preliminary studies were conducted on the laser processing of SiC/A356-Al alloy metal matrix composite (MMC) for such applications as welding/joining and cutting. The SiC/A356-Al MMC was processed using several different laser specific energies. Microstructural observations after laser processing revealed that the ext…

Advanced ceramic materials synthesisAdditive Manufacturing and 3D Printing TechnologiesHigh Entropy Alloys Studies

Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

W. Kürner、R. Sauer、A. Dörnen 等 4 位作者1989-06-15Physical review. B, Condensed matter

The oxygen-carbon luminescence defects with no-phonon emission at 0.767 eV (``P line'') and 0.79 eV (``C line'') created in pulled silicon after 450 \ifmmode^\circ\else\textdegree\fi{}C thermal annealing or electron irradiation, respectively, are investigated in a comparative study. This includes investigation of all…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceIon-surface interactions and analysis

Al,Ga substitution in RE2Fe17 (RE=Ce,Pr,Nd): Magnetic behavior of RE2Fe15(Al,Ga)2 alloys

F. Weitzer、K. Hiebl、P. Rogl1989-06-15Journal of Applied Physics

Alloys with the composition RE2Fe17 and RE2Fe15X2 (X=Al,Ga) have been synthesized by the arc-melting technique followed by an 125-h anneal at 900–1000 °C in evacuated silica capsules. The new compound Nd2Fe15Ga2 is unstable below 800 °C, and is only obtained by quenching from above 900 °C. From x-ray powder diffractio…

Magnetic and transport properties of perovskites and related materialsRare-earth and actinide compoundsMagnetic Properties of Alloys

Vibrational analysis of heterocyclic polymers: A comparative study of polythiophene, polypyrrole, and polyisothianaphtene

E. Faulques、W. Wallnöfer、H. Kuzmany1989-06-15The Journal of Chemical Physics

We present for the first time a comparative vibrational study of polythiophene, polypyrrole, and polyisothianaphthene. The calculation is performed at k=0 in the plane of the chains for both aromatic-like and quinoid-like structures. The Ag species which are present in the Raman spectra are more particularly investiga…

Organic Electronics and PhotovoltaicsConducting polymers and applicationsAnalytical Chemistry and Sensors

Thermal relaxation of pseudomorphic Si-Ge superlattices by enhanced diffusion and dislocation multiplication

Subramanian S. Iyer、F. K. LeGoues1989-06-15Journal of Applied Physics

Pseudomorphic Si/Si-Ge strained layer superlattices are metastable and will relax to lower-energy, less strained, states on thermal annealing. Such relaxation may occur by the generation of misfit dislocation or by compositional homogenization of the superlattice. The particular mechanism adopted is shown to depend on…

Semiconductor Quantum Structures and DevicesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces

Thermal conductivity of amorphous materials above the plateau

Ashok Jagannathan、R. Orbach、O. Entin‐Wohlman1989-06-15Physical review. B, Condensed matter

We calculate the contribution to the thermal conductivity, \ensuremath{\kappa}, in amorphous solids of the hopping of localized vibrational modes coupled to phonons via the anharmonic interaction. This contribution is generally important for temperatures above the plateau region in \ensuremath{\kappa}. The temperature…

Material Dynamics and PropertiesGlass properties and applicationsRandom lasers and scattering media

Cathodoluminescence of defects in diamond films and particles grown by hot-filament chemical-vapor deposition

Lawrence H. Robins、L. P. Cook、E. N. Farabaugh 等 4 位作者1989-06-15Physical review. B, Condensed matter

Point defects, impurities, and defect-impurity complexes in diamond particles and polycrystalline films were investigated by cathodoluminescence (CL) imaging and spectroscopy in a scanning electron microscope. The diamond films and particles were grown by hot-filament methane-hydrogen chemical-vapor deposition at seve…

Semiconductor materials and devicesDiamond and Carbon-based Materials ResearchIon-surface interactions and analysis

Multiphonon hopping of electrons on defect clusters in amorphous germanium

K. Shimakawa1989-06-15Physical review. B, Condensed matter

A high density of microvoids could cause inhomogeneous distribution of deep localized states in amorphous germanium. The electronic transport in such media is no longer dominated by Mott variable-range hopping. The dc conductivity is proportional to ${T}^{n}$ with n\ensuremath{\simeq}6, suggesting that the transport i…

Quantum and electron transport phenomenaGlass properties and applicationsElectronic and Structural Properties of Oxides