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Novel fabrication method for nanometer-scale silicon dots and wires

G. S. Chen、C. B. Boothroyd、C. J. Humphreys1993-04-19Applied Physics Letters

We have discovered that a thin film of SiO2 can be directly reduced to Si under electron beam irradiation. The application of this effect to the fabrication of nanometer-sized Si dots and wires is demonstrated. In particular, if SiO2 is irradiated with a high intensity 100 keV electron beam of nanometer scale, then a…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Hydrodynamics of two-dimensional smectics on fluid surfaces

Stephen A. Langer、Andrea J. Liu、John Toner1993-04-19Physical Review Letters

The long wavelength hydrodynamics of films with unidirectional translational order adsorbed on fluid surfaces (as in a Langmuir monolayer) is formulated. We find the hydrodynamic frequencies \ensuremath{\omega}(q)\ensuremath{\propto}(\ifmmode\pm\else\textpm\fi{} \ensuremath{\surd}3 -i)${\mathit{q}}^{14/9}$ ${\mathrm{c…

Liquid Crystal Research AdvancementsSurfactants and Colloidal SystemsPickering emulsions and particle stabilization

Doping-induced selective area photoluminescence in porous silicon

A. J. Steckl、Jiahao Xu、H. C. Mogul 等 4 位作者1993-04-19Applied Physics Letters

The incubation time (ti) for the onset of porous Si formation by stain etching in HF:HNO3:H2O was observed to be a strong function of dopant type and concentration. For B-doped p-Si, ti increased significantly with substrate resistivity (ρ), from ∼0.5 min for 0.004 Ω cm to ∼9 min for 50 Ω cm. P-doped n-Si substrates e…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Propagating and confined vibrational excitations in quasicrystals

J. Häfner、M. Krajčı́1993-04-19Journal of Physics Condensed Matter

The authors present detailed investigations of vibrational modes in a hierarchy of rational (or commensurate) approximants to icosahedral quasicrystals based on exact diagonalization of the dynamical matrix and recursion calculations of the vibrational spectrum. The results demonstrate the existence of well defined lo…

Quasicrystal Structures and PropertiesX-ray Diffraction in CrystallographyMineralogy and Gemology Studies

Identification of an actin binding region in aldolase

Gabrielle O'Reilly、Frank M. Clarke1993-04-19FEBS Letters

Fragmentation of the actin binding glycolytic enzyme, aldolase, with cyanogen bromide yields an 18K actin binding fragment which corresponds to residues 1-164 of the aldolase sequence. Within this fragment there is a region of sequence (residues 32-52) which is highly homologous to a region of sequence near the C-term…

Advanced Proteomics Techniques and ApplicationsAdvanced Fluorescence Microscopy TechniquesEnzyme Structure and Function

Argon and hydrogen plasma interactions on diamond (111) surfaces: Electronic states and structure

J. van der Weide、R. J. Nemanich1993-04-19Applied Physics Letters

Photoemission spectroscopy was used to compare the effects of a hydrogen or argon plasma on natural-type 2B diamond (111) surfaces, while the diamond was heated to 350 °C. After the hydrogen plasma the surface exhibits a negative electron affinity, indicative of a hydrogen-terminated surface. In contrast, the argon pl…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchQuantum, superfluid, helium dynamics

Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films

P. C. Joshi、S. B. Krupanidhi1993-04-19Applied Physics Letters

Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition technique and rapid thermally annealed at 700 °C for 20 s have shown good ferroelectric switching, fatigue, and retention characteristics. A switching time of 180 ns was measured for a 0.5 μm thick capacitor with an electrode a…

Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsElectronic and Structural Properties of Oxides

Phase transition in PbTiO3ultrafine particles of different sizes

W. L. Zhong、Bin Jiang、P L Zhang 等 6 位作者1993-04-19Journal of Physics Condensed Matter

The size effect on the ferroelectric phase transition in PbTiO 3 ultra-fine particles is reported. Samples with particle sizes from 20 to 200 nm were prepared by a sol-gel process followed by calcining at different temperatures. The particle size was determined by X-ray diffraction from the integrated width of diffrac…

Ferroelectric and Piezoelectric MaterialsMaterial Dynamics and PropertiesSurface Roughness and Optical Measurements

Nonlocal screening effects in 2px-ray photoemission spectroscopy core-level line shapes of transition metal compounds

M. A. van Veenendaal、G. A. Sawatzky1993-04-19OpenAlex

We show that the 2p core-level line shapes of transition metal (TM) compounds are strongly influenced by the presence of more TM ions. Using calculations of clusters, involving more than one TM ion we explain the double peaked main line of the Ni 2p spectrum of NiO as well as the difference in line shape compared with…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesElectronic and Structural Properties of Oxides

Plastic Phase in Tetrabutylammonium Bromide

Z. Pająk、B. Szafrańska1993-04-16physica status solidi (a)

Proton NMR second moment, spin—lattice relaxation times, spin-echoes, and DSC studies are performed for polycrystalline tetrabutylammonium bromide over a wide range of temperature. Two solid-solid phase transitions, a very weak and a strong one, are located at 305 K (III ⟹ II) and 362 K (II ⟹ I), respectively. Methyl…

Advanced NMR Techniques and ApplicationsSolid-state spectroscopy and crystallographyElectron Spin Resonance Studies

Electrical and Photovoltaic Properties of Tetrapyrydilporphyrin Sandwich Cells

S. Antohe1993-04-16physica status solidi (a)

Electrical and photovoltaic effects observed with a thin film of 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) sandwiched between indium-tin oxide (ITO) and Al electrodes are explained in terms of the n-type semiconducting behaviour of the organic film and its formation of a blocking contact (Schottky barrier) wi…

Porphyrin and Phthalocyanine ChemistryMolecular Junctions and NanostructuresElectrochemical Analysis and Applications

Bis(tetrabutylammonium) nonadecaoxohexamolybdenum(VI): a second polymorph

Arnold L. Rheingold、Christian G. White、Brian S. Haggerty 等 4 位作者1993-04-15Acta Crystallographica Section C Crystal Structure Communications

[C 16 H 36 N] 2 °Mo 6 O 19 ] M r =1364.6, monoclinic, C2/c, a=16.280 (3), b=17.204 (3), c=17.738 (4) A, β=101.42 (2) o , V=4869.3 (17) A 3 , Z=4, D x =1.861 g cm -3 , λ(Mo Kα) = 0.71073 A, μ=15.66 cm -1 , F(000)=2728, T=298 K, R=0.0633 for 2857 observed reflections and 269 least-squares parameters. The six Mo atoms fo…

Organometallic Complex Synthesis and CatalysisMetal-Organic Frameworks: Synthesis and ApplicationsPolyoxometalates: Synthesis and Applications

Alkaline-earth beryllium borate CaBeB2O5

Kathleen I. Schaffers、Douglas A. Keszler1993-04-15Acta Crystallographica Section C Crystal Structure Communications

Beryllium calcium diborate, CaBeB 2 O 5 , M r =150.71, monoclinic, P2 1 /n, a=5.167 (2), b=3.756 (2), c=17.160 (2) A, β=98. 12 (2) o , V=329.7 (2) A 3 , Z=4, D x =3.036 g cm -3 , λ(Mo Kα)= 0.71069 A, μ=17.38 cm -1 , F(000)=296, T=298 K, R=0.039 for 508 reflections having F o 2 ≥3σ(F o 2 )

Crystal Structures and PropertiesSolid-state spectroscopy and crystallographyInorganic Chemistry and Materials

Semiconductor-Metal Transition Induced by the Structural Transition in Liquid Ge15Te85

Yoshimi Tsuchiya、Hiroyuki Saitoh1993-04-15Journal of the Physical Society of Japan

The electrical conductivity and thermoelectric power have been measured to investigate the semiconductor-metal transition in liquid Ge 15 Te 85 . It has been found that the activation energy of the electrical conductivity has a marked peak definitely below the temperature where the specific heat, compressibility and t…

Material Dynamics and PropertiesPhase-change materials and chalcogenidesChemical Thermodynamics and Molecular Structure

Band edge optical absorption in intrinsic silicon: Assessment of the indirect transition and disorder models

Richard Corkish、Martin A. Green1993-04-15Journal of Applied Physics

Two competing theories of the optical absorption edge of intrinsic crystalline silicon, the indirect transition theory, and the recent disorder (Urbach edge) theory, are assessed critically. The assessment of the indirect transition theory includes an attempt to predict, by the use of the luminescence spectrum and the…

Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Reverse-ballistic impact study of shear plug formation and displacement in Ti6Al4V alloy

W. H. Holt、W. Mock、William G. Soper 等 6 位作者1993-04-15Journal of Applied Physics

Gas-gun reverse-ballistic experiments have been performed in which Ti6Al4V alloy disks were impacted onto smaller diameter, hardened steel rods to push out shear plugs from the disk material. The range of disk velocities was 219–456 m/s. For each experiment, the disk, plug, and rod were soft recovered after impact. Be…

High-pressure geophysics and materialsHigh-Velocity Impact and Material BehaviorElectromagnetic Launch and Propulsion Technology

Switching response of a polymer dispersed liquid-crystal composite

Sukhmal C. Jain、Ravindra Singh Thakur、S.T. Lakshmikumar1993-04-15Journal of Applied Physics

Control over the switching times of polymer dispersed liquid crystal (PDLC) displays is an area of technological importance. We found that the switching times of a PDLC cell can be effectively controlled by using a dual frequency addressable liquid crystal mixture and driving it with appropriate electric fields. The d…

Photonic and Optical DevicesLiquid Crystal Research AdvancementsPhotonic Crystals and Applications

Electronic structures of BaB2O4 and LiB3O5

William Y. Hsu、R. V. Kasowski1993-04-15Journal of Applied Physics

The electronic bands of BaB2O4 (BBO) and LiB3O5 (LBO) have been computed from first principles using the ab initio pseudofunction method. Optical conductivities and densities of states in good agreement with optical measurements and x-ray photoemission are obtained. The gap in BBO results from the borate group to the…

High-pressure geophysics and materialsCrystal Structures and PropertiesAdvanced Condensed Matter Physics

Band gaps in some group-IV materials: A theoretical analysis

Jennifer L. Corkill、Marvin L. Cohen1993-04-15Physical review. B, Condensed matter

We have studied the effects of expansion of the lattice on band-edge levels in Si, Ge, Sn, and SiSn. The variation in the gap in the Si\ensuremath{\rightarrow}Ge\ensuremath{\rightarrow}Sn series can be explained as moving along a universal curve of the variation of band-edge levels with the combined effect of volume a…

Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsSemiconductor materials and interfaces

Epitaxial growth of naphthalocyanine thin films vacuum deposited on alkali halides

Hisao Yanagi、Takashi Kouzeki、Michio Ashida1993-04-15Journal of Applied Physics

Epitaxial thin films of naphthalocyanines (Nc’s) were prepared on the (001) surface of alkali halide (AX) by a vacuum-deposition technique. Two types of molecular stacking and orientation were found depending on the molecular structure. Metal-free Nc(H2Nc) and divalent zinc Nc(ZnNc) took the face-to-face, eclipsed sta…

Organic Electronics and PhotovoltaicsPorphyrin and Phthalocyanine ChemistryMolecular Junctions and Nanostructures