Materials Literature
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Heterogeneous and homogeneous processes in the formation of diamond at low pressures, where diamond is a metastable modification of carbon, are discussed. Data on the kinetics of the growth of diamond from hydrocarbons under conditions which give codeposition with graphite are reported, together with data on the influ…
The ultramicrostructure of commensurate graphite intercalation compounds has been investigated using high-resolution transmission electron microscopy. By directly examining the intercalate lattice at atomic resolution, the authors have discovered intercalate domains of nearly macroscopic dimensions (>1000 AA) exten…
Single-phase LaNi 1-x Mn x O 3 samples in the compositional range 0<or=x<or=0.2 were prepared by the decomposition of precursor hydroxide solid solutions, and La 2 NiMnO 6 was prepared from a mixture of carbonates. All the samples contained a disordered array of nickel and manganese ions. X-ray absorption and XP…
Field-induced reorientations of liquid crystals, far from equilibrium, produce spatially periodic responses. The wavelength selected maximizes response speed. A detailed analysis of the effect in a novel geometry is presented, along with a discussion of its general importance in polymerlike liquid crystals.
An ODMR study at 1.6K shows that the 3.4 eV luminescence of Y 2 O 3 originates in a triplet state. The results are consistent with an intrinsic trapping mechanism for excitons. The nature of the trapping mechanism is discussed. Results of an ODMR study of SC 2 O 3 are also reported, using the 3.6 eV luminescence.
The dc conductivity of a-Se and binary amorphous SeTe, SeGe, and SeSb films is measured as a function of temperature (80 to 300 K) and film thickness (500 to 2000 Å). It is found that except for SeSb films, the conduction in all the samples takes place in the tails of localized states via thermally activated tunne…
The thermal conductivity of Ge doped with electroneutral impurities, Si, Sn and the acceptor impurity, Al, is investigated in the temperature range 80 to 400 K. It is established that at equal impurity concentrations the temperature dependence of the thermal conductivity in Ge doped with the electroactive impurity Al,…
The dislocation dynamics in MgO single crystals containing some hundred ppm of aliovalant impurities is investigated by three experimental techniques: in-situ deformation experiments in the high-voltage electron microscope, stress pulse-etching experiments on individual dislocations, and macroscopic deformation experi…
The thermoelectric properties of polycrystalline samples of GeTe-rich side solid solutions (GeTe)1−x·(AgSbTe2)x, for the compositions x = 0.00, 0.10, 0.15, 0.20, and 0.29 are investigated. The temperature dependences of the Seebeck coefficient and the electrical resistivity and the dependences of the total thermal con…
An optical method of measuring and displaying depth information has been developed which is based on the Fresnel diffraction properties of coherently illuminated gratings. Cosine modulated gratings are found to be more flexible than simple gratings for depth measurement. A pair of gratings crossed at right angles is u…
The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6-\ensuremath{\mu}m radiation from a C${\mathrm{O}}_{2}$ laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the si…
We present a new multiplet theory that separates mean-field from multiplet effects in the excitation and donor-acceptor ionization spectra of localized impurities. Analysis of the experimental data for all $3d$ impurities in ZnO, ZnS, ZnSe, and GaP for which sufficient data exist and for the bulk Mott insulators CoO,…
We report results of photoemission experiments and a new bulk band-structure calculation for monotungsten carbide (WC). Three types of photoemission experiment were performed on a WC(0001) surface, with the use of synchrotron radiation. Normal-emission angle-resolved spectra in the range $10\ensuremath{\le}h\ensuremat…
The measurements of the $c$-axis conductivity ${\ensuremath{\sigma}}_{c}$ at room temperature for acceptor graphite intercalation compounds typically show very small values of ${\ensuremath{\sigma}}_{c}$, ranging from \ensuremath{\sim}${10}^{\ensuremath{-}1}$ to \ensuremath{\sim}10 ${(\mathrm{\ensuremath{\Omega}}\math…
The Raman spectrum of the defect tetrahedral layer compound GaGeTe at 297 and 80 K has been measured. Six prominent phonons, at 296, 286, 263, 178, 168, and 66 ${\mathrm{cm}}^{\ensuremath{-}1}$, have been observed at 297 K. These phonons are compared with theoretical predictions based on the planar force constants of…
The optical constants $n$ and $k$ of arc-evaporated amorphous carbon films between 400 and 4800 ${\mathrm{cm}}^{\ensuremath{-}1}$ were determined by measuring the transmittance and the reflectance of the films. Two broad bands with maxima at 703 and 1233 ${\mathrm{cm}}^{\ensuremath{-}1}$ in the spectral dependence of…
Vacancy jumps in a bicrystal model of $\ensuremath{\Sigma}=5$ (36.9\ifmmode^\circ\else\textdegree\fi{}) [001] tilt boundary in bcc Fe have been simulated at temperatures of 1300, 1400, and 1500 K by molecular dynamics with the use of the empirical Johnson potential. The results confirm the dominance of a vacancy mecha…
Raman spectra are reported for liquids and Langmuir films enhanced by the electromagnetic fields of plasmon surface polaritons at flat silver surfaces. The Kretschmann prism coupling configuration is used to excite the incident surface polariton and to couple out the Raman shifted surface wave. The spectra are interpr…
The structural relaxation of a high-angle grain boundary at elevated temperatures has been simulated by molecular dynamics with the use of a bicrystal model composed of 399 atoms. The system studied was a $\ensuremath{\Sigma}=5$ (36.9\ifmmode^\circ\else\textdegree\fi{}), [001] tilt boundary with interatomic interactio…
We have measured the change in the charge-density-wave (CDW) transitions in monoclinic Nb${\mathrm{Se}}_{3}$ and orthorhombic Ta${\mathrm{S}}_{3}$ caused by stress applied along the high-symmetry (growth) axis. For the upper transition in Nb${\mathrm{Se}}_{3}$, $\frac{d{T}_{1}}{d\ensuremath{\sigma}}=\ensuremath{-}4.4$…