Materials Literature
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The transmittances and reflectances of cultured crystalline quartz, Suprasil, Suprasil W, and Infrasil were compared over the wavelength region from 2 to 1000 μm. The high-water content of Suprasil and the low-water content of cultured crystalline quartz, Suprasil W, and Infrasil were determined by their transmittance…
Reflectance and transmittance of electromagnetic radiation from an exponentially graded-index multilayer dielectric structure are investigated theoretically. It is shown that such a structure maximizes the optical transmission in the case in which this transmission is approximated by summing intensities. Transmittance…
The angular dependence of the high-field magnetoresistance anomaly in graphite is reported. The observed angular dependence is consistent with the functional form for the phase boundary of a charge-density-wave transition suggested by Yoshioka and Fukuyama. Sharp periodic features in the resistivity occurring after th…
The surface electronic structure of single-crystal ${\mathrm{V}}_{2}$${\mathrm{O}}_{3}$ has been studied by using ultraviolet and x-ray photoelectron spectroscopy. Both nearly-perfect surfaces and surfaces containing point defects have been prepared, and the influence of ${\mathrm{O}}_{2}$ and ${\mathrm{H}}_{2}$O on b…
Calculations of 4f → 4f electric dipole intensity parameters are reported for six different lanthanide (III) systems whose solid-state structures and optical spectra have been well characterized. In each case, the ligands are considered to have isotropic electronic charge distributions, and the 4f → 4f intensity param…
The Raman spectra of thin film, and powdered crystalline forms of CuTCNQ have been studied and analyzed in connection with their electronic spectra and vibrational normal coordinate analysis and molecular orbital results. Nonresonance and resonance Raman conditions have been obtained by using different sample forms an…
A metalorganic chemical vapor deposition process for preparing c-axis-oriented ZnO films in a simple system of the type commercially available for SiO2 deposition is described. The resulting layers are highly uniform in thickness and adhere to a variety of substrates. Film properties and structure are described briefl…
A general parametrization scheme for the electric dipole intensities of lanthanide 4f → 4f crystal-field transitions is proposed. This parametrization is sufficiently general to accommodate any 4f → 4f intensity mechanism based on the ‘‘one-electron’’ and ‘‘one-photon’’ approximations for lanthanide-ligand-radiation f…
The electronic structure of the organic conductors bis-tetramethyltetraselenafulvalene-$X$ [${(\mathrm{TMTSF})}_{2}X$] and bis-tetramethyltetrathiafulvalene-$X$ [${(\mathrm{TMTTF})}_{2}X$] has been investigated by means of polarized optical and infrared reflectance measurements. Analysis of plasma edges in reflectance…
Semiempirical self-consistent-field calculations are carried out on various polyenes with emphasis on defect configurations designed to simulate soliton and polaron excitations in polyacetylene. For defect-free polyenes, the calculated bond-length alternation ($\ensuremath{\Delta}r=0.106$ \AA{}) is in close agreement…
The heat capacity of a sample of zone-refined, high-purity p-terphenyl has been determined from 4 to 370 K in a fully automated high-resolution vacuum adiabatic calorimeter and from 320 to 580 K in a differential scanning calorimeter. The melting point of p-terphenyl is 487.0 K and the enthalpy of fusion is 35.3 kJ/mo…
A near-infrared reflectivity exceeding 60% at 2.5-μm wavelength has been observed for a polycrystalline, rf sputter-deposited electrochromic (EC) WO3 film in a deeply colored state. This reflectivity is considerably higher than that previously reported for a thermally evaporated EC-WO3 film that was crystallized by a…
Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text Michael C. Hettrick and Stuart Bowyer, "Variable line-space gratings: new designs for use in grazing incidence spectrometers," Appl. Opt. 22, 3921-3924…
Clusters are produced in a free jet expansion of water vapor. Keeping constant the nozzle diameter (d=0.4 mm) and temperature (T=430 K), an increase in inlet vapor pressure from 1 to 5 bar produces an increase in mean cluster size from several tens to several thousands of molecules per cluster. An electron diffraction…
A complete study of the $\stackrel{\ensuremath{\rightarrow}}{\mathrm{k}}=\stackrel{\ensuremath{\rightarrow}}{0}$ optical phonons of the ferroelectric tetragonal PbTi${\mathrm{O}}_{3}$ as a function of hydrostatic pressure has been carried out using Raman spectroscopy. The coalescence, to the same frequency, of the hig…
Dispersion experiments of the second-order nonlinear optical susceptibility are reported for two fundamentally important organic systems $p$-nitroaniline and 2-methyl-4-nitroaniline for which detailed quantum-mechanical calculations have been completed. The frequency-dependent measurements were performed by dc-induced…
The dynamics of concentration fluctuations in binary polymer mixtures AB, A and B being long and flexible chains, is studied near the critical point of unmixing. A ‘‘hydrodynamic’’ theory in close analogy to the treatments of Cahn–Hilliard and Cook for the dynamics of unmixing alloys is developed, and its validity is…
A quantum mechanical method based on the Kramers–Heisenberg dispersion relation is used to evaluate the dielectric response of small metal particles, and thereby to determine the influence of particle size on the widths of the plasmon resonance line shapes. Several different particle shapes are considered (sphere, cyl…
Most one-dimensional conductors are quite similar since the Fermi surface is a point and the electron energy dispersion relation near the Fermi surface is linear. It is pointed out that in polyacene the Fermi surface lies at the edge of the Brillouin zone, but that an accidental degeneracy between the valence and cond…
The position of the Fermi level ${E}_{F}$ relative to the valence-band maximum ${E}_{V}$ has been determined from accurate measurements of the Si $2p$ core-level position relative to ${E}_{F}$. As a reference, we use $p$-doped samples with a Ga overlayer and $n$-doped samples with a Cs + O overlayer where ${E}_{F}$ is…