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Electronic structure of emeraldine and related molecules

C. B. Duke、A. Paton、E. M. Conwell 等 5 位作者1987-03-15The Journal of Chemical Physics

The CNDO/S3 molecular orbital model is applied to describe the electronic structure of aniline, (C6H5)NH2, emeraldine, (C6H5)N(C6H4)N(C6H4)NH(C6H4)NH2, its hydrogenated and dehydrogenated forms, and its singly and doubly protonated forms. The cation eigenvalue spectrum, i.e., density of valence states (DOVS), is found…

Organic Electronics and PhotovoltaicsConducting polymers and applicationsAnalytical Chemistry and Sensors

Molecular cloning and over-expression of the glyoxylate bypass operon from Escherichia coli ML308

E.M.T. El-Mansi、Carol MacKintosh、Kenneth Duncan 等 5 位作者1987-03-15Biochemical Journal

A recombinant plasmid carrying an 11 kb restriction-endonuclease-ClaI fragment of genomic DNA from Escherichia coli ML308 was constructed. This plasmid complements an aceA mutation. The plasmid encodes the structural genes of the glyoxylate bypass operon, namely malate synthase A (aceB), isocitrate lyase (aceA) and is…

Microbial Metabolic Engineering and BioproductionEnzyme Structure and FunctionBiochemical and Molecular Research

Formation and structure of icosahedral and glassy phases in melt-spun Al-Si-Mn

HS Chen、David C. Koskenmaki、C. H. Chen1987-03-15Physical review. B, Condensed matter

X-ray scattering and electron-transmission microscopy of melt-spun Al-Si-Mn alloys reveal that the Al-Mn icosahedral phase itself can grow congruently over a range of composition varying from 16 to 20 at.?Mn, and Si atoms substitute Al atoms selectively. The Q dependences of linewidth \ensuremath{\Delta}Q suggest that…

Metallic Glasses and Amorphous AlloysPhase-change materials and chalcogenidesQuasicrystal Structures and Properties

Magneto-optical Kerr effect of rf-sputtered PtMnSb thin films

Ryuji Ohyama、T. Koyanagi、Kakuei Matsubara1987-03-15Journal of Applied Physics

Thin films of the C1b-phase Heusler alloy PtMnSb, prepared by rf sputtering and subsequent annealing, have been studied in order to assess the high magneto-optical Kerr effect of this compound. The room-temperature saturation magnetization (Ms) and coercive force (Hc) for PtMnSb thin films after being annealed at 500…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesHeusler alloys: electronic and magnetic properties

Resonances in the photoemission cross section of a surface state: Results for Ag(111)

T. C. Hsieh、P. John、T. Miller 等 4 位作者1987-03-15Physical review. B, Condensed matter

We present a model to explain the resonances in the photoemission cross section of a surface state as a function of photon energy. The model is based on an extension of the direct-transition model for bulk states, and should be applicable to a surface state with a long decay length. Energy broadening of the final stat…

Advanced Chemical Physics StudiesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Lattice-dynamical and photoelastic properties of GaSe under high pressures studied by Raman scattering and electronic susceptibility

Noritaka Kuroda、Osamu Ueno、Yūichirō Nishina1987-03-15Physical review. B, Condensed matter

Raman scattering and infrared studies are reported for the layer compound GaSe under hydrostatic pressures up to 4 GPa. The rigid-layer mode shifts towards higher frequencies with an initial pressure coefficient of 0.234 ${\mathrm{GPa}}^{\mathrm{\ensuremath{-}}1}$. The overall behavior is explained in terms of the vol…

High-pressure geophysics and materialsCrystal Structures and PropertiesSolid-state spectroscopy and crystallography

Localized 3pexcitations in 3dtransition-metal-series spectroscopy

Jeffrey M. McKay、Mohamed H. Mohamed、Victor E. Henrich1987-03-15Physical review. B, Condensed matter

Localized 3p excitations and their decay have been studied in 3d transition metals and their single-crystal oxides by using electron-energy-loss (EELS), photoemission, and resonant photoemission spectroscopies. Variation of the primary-electron-beam energy in EELS allows the resolution of threshold transitions from hi…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesElectronic and Structural Properties of Oxides

Dielectric properties of new stable ferroelectric liquid crystals with large spontaneous polarization

Masanori Ozaki、Katsumi Yoshino、Takao Sakurai 等 5 位作者1987-03-15The Journal of Chemical Physics

New series of ferroelectric liquid crystals with two chiral carbons or bulky molecular components at the chiral carbon are synthesized and are found to possess extremely large spontaneous polarization exceeding 2×10−7 C/cm2 and a dielectric constant larger than 7000. These compounds are stable and exhibit a novel diel…

Liquid Crystal Research AdvancementsSynthesis and Properties of Aromatic CompoundsPlant Reproductive Biology

Orientation relationship of decagonal quasicrystal and tenfold twins in rapidly cooled Al-Fe alloy

Xiaodong Zou、K. K. Fung、K. H. Kuo1987-03-15Physical review. B, Condensed matter

We have found that decagonal quasicrystal and 10-fold twins of monoclinic ${\mathrm{Al}}_{13}$${\mathrm{Fe}}_{4}$ coexist in rapidly cooled Al-Fe alloy. The tenfold axis of the decagonal phase is parallel to the pseudotenfold [010] axis of the twins. There is good coincidence between the strong spots of the decagonal…

Microstructure and mechanical propertiesQuasicrystal Structures and PropertiesX-ray Diffraction in Crystallography

Raman spectroscopy of submicronKNO3films

J. F. Scott、Mingsheng Zhang、R. B. Godfrey 等 5 位作者1987-03-15Physical review. B, Condensed matter

We have obtained Raman spectra of phase-I, -II, and -III ${\mathrm{KNO}}_{3}$ films 0.26 \ensuremath{\mu}m thick. The primary aim was to establish the physical mechanism for stabilization of the ferroelectric phase III in thin films. In bulk, phase III exists only as a reentrant phase stable from \ensuremath{\sim}113…

Ferroelectric and Piezoelectric MaterialsTheoretical and Computational PhysicsAcoustic Wave Resonator Technologies

Heteroepitaxial growth of SrO films on Si substrates

Yuichi Kado、Yoshinobu Arita1987-03-15Journal of Applied Physics

Epitaxial growth of SrO thin films onto Si(111) and (100) substrates by means of molecular-beam epitaxy has been demonstrated. The orientation relationships between epitaxial SrO and Si were found to be (111)SrO//(111)Si and [112̄]SrO//[112̄]Si, (100)SrO//(100)Si and [011]SrO//[001]Si. The composition of the grown fil…

ZnO doping and propertiesSemiconductor materials and devicesElectronic and Structural Properties of Oxides

Quantum size effects in spherical semiconductor microcrystals

Selvakumar V. Nair、Sucharita Sinha、K. C. Rustagi1987-03-15Physical review. B, Condensed matter

The size dependence of the lowest electron-hole state in semiconductor microcrystals is calculated using the variational principle with a three-parameter Hylleraas-type wave function. For very small particles the Coulomb interaction may be treated as a perturbation. For larger particles the size dependence of the ener…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films

Optical properties of scandium thin films

M. Sigrist、Gérard Chassaing、J. C. François 等 6 位作者1987-03-15Physical review. B, Condensed matter

A new investigation of the optical properties of scandium is presented. Near-normal-incidence reflectivity measurements were performed from 0.22 to 5.5 eV on polycrystalline thin films evaporated in situ in ultrahigh vacuum. The reflectivity, from 0.22 to 35 eV, of the same samples after they had been exposed to air w…

Semiconductor materials and devices3D IC and TSV technologiesCopper Interconnects and Reliability

Resonance Raman scattering from defects in CdSe

Akhilesh Arora、A. K. Ramdas1987-03-15Physical review. B, Condensed matter

Resonance Raman scattering (RRS) in CdSe is investigated in the region of the A excitonic transition. Three new Raman lines at 182, 195, and 208 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ are observed which become stronger than even the line due to the longitudinal optic (LO) phonon under appropriately resonant condit…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films

Fundamental absorption edge ofSrTiO3at high temperatures

D. Goldschmidt、Harry L. Tuller1987-03-15Physical review. B, Condensed matter

Transmission measurements on single-crystal ${\mathrm{SrTiO}}_{3}$ between room temperature and 1200?deC are reported. Urbach broadening of the absorption edge is observed at all temperatures. Below 200?deC the broadening is typical of the lowest indirect band gap. Above 400?deC the dominating broadening is due to the…

Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesElectronic and Structural Properties of Oxides

Optical properties of transition-metal ions in zirconium-based metal fluoride glasses andMgF2crystals

Yohichi Suzuki、W. A. Sibley、O. H. El Bayoumi 等 5 位作者1987-03-15Physical review. B, Condensed matter

The optical properties of the transition-metal ions, ${\mathrm{Ni}}^{2+}$, ${\mathrm{Co}}^{2+}$, and ${\mathrm{Mn}}^{2+}$, in zirconium-barium-lanthanum-aluminum (ZBLA) fluoride glass are reported. Comparisons of the absorption spectra, luminescence spectra, and luminescence lifetimes for these ions in ZBLA and in ${\…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsSolid State Laser Technologies

NMR Study of Weakly Itinerant Ferromagnetic Y(Co1-xAlx)2

Kazuyoshi Yoshimura、M. Takigawa、Yoshinori Takahashi 等 5 位作者1987-03-15Journal of the Physical Society of Japan

The hyperfine field, H hf , and the nuclear spin-lattice relaxation rate, 1/ T 1 , of 59 Co and 27 Al nuclei have been measured in the weak itinerant ferromagnets Y(Co 1- x Al x ) 2 . The temperature and magnetic field dependence of 1/ T 1 T has been found to be well described by the self-consistent renormalization (S…

Magnetic properties of thin filmsRare-earth and actinide compoundsMagnetic Properties of Alloys

Theoretical study of a Cu+ ion impurity in a NaF host

N. W. Winter、Russell M. Pitzer、D. K. Temple1987-03-15The Journal of Chemical Physics

The Cu+ ion impurity in a NaF host has been modeled using a finite cluster of ions to represent the crystal lattice. Several approximations to the lattice potential in the region of the cluster were compared to the exact Madelung potential. The error in the calculated nearest-neighbor distance for the pure host was fo…

Copper Interconnects and ReliabilityInorganic Chemistry and MaterialsInorganic Fluorides and Related Compounds

Pressure dependence of thec-axis resistivity of graphite

Ctirad Uher、R.L. Hockey、Eshel Ben‐Jacob1987-03-15Physical review. B, Condensed matter

The c-axis resistivity of highly oriented pyrolytic graphite has been measured from 2 to 300 K under hydrostatic pressures of up to 40 kbar. A resistivity peak near 40 K, typical for this type of graphite at ambient pressure, rapidly diminishes with increasing pressure but does not shift its position with respect to t…

Carbon Nanotubes in CompositesGraphene research and applicationsGraphite, nuclear technology, radiation studies

Optical response and band-structure calculations of alkaline-earth tellurides under pressure

K. Syassen、N. E. Christensen、H. Winzen 等 5 位作者1987-03-15Physical review. B, Condensed matter

Optical reflection and absorption spectra of SrTe and BaTe have been measured in the pressure range of 0 to 400 kbar at 300 K. Excitonic transitions related to the lowest direct gap in the rocksalt (B1) structure shift to lower energy with increasing pressure and are attributed to a Te 5p to Ba 5d (Sr 4d) transition a…

Chalcogenide Semiconductor Thin FilmsCrystal Structures and PropertiesSolid-state spectroscopy and crystallography