Materials Literature
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Electronic structures of metallic ${\mathrm{LaNiO}}_{3}$ and insulating ${\mathrm{NdNiO}}_{3}$ are investigated using electron spectroscopies as well as band-structure and model-Hamiltonian calculations. It is shown that there is an increase in the transfer integral, ${\mathit{t}}_{\mathit{p}\mathit{d}}$ in ${\mathrm{…
Lead zirconate (PZ) thin layers were formed by a sol-gel method and crystallized with a pseudocubic (111) or (100) preferred orientation. The field-forced antiferroelectric (AFE)-to-ferroelectric (FE) phase transformation behavior was examined by Sawyer–Tower measurements. Dielectric properties were measured as a func…
An analysis of the island size and separation distributions of Fe islands, observed in the initial stages of growth in the homoepitaxy of Fe on Fe(001) whiskers, shows scaling properties recently predicted in nucleation and growth theories. A critical size of one atom, where islands greater than the critical size unde…
The local density of states (LDOS) of a single disclination and a disclination pair of various configurations in the monolayer graphite is calculated by the recursion method introduced by Haydock [J. Phys. C 5, 2845 (1972)]. The LDOS shows the existence of some resonant states near the Fermi energy. At the Fermi level…
Using a semiempirical molecular-orbital technique, incorporating Car-Parrinello molecular dynamics, the structure and properties of the common aggregates of nitrogen atoms in diamond have been investigated. Nitrogen-vacancy complexes have been examined in the same way, showing that, as is observed, it is energetically…
The D - E hysteresis loop of ferroelectrics is theoretically studied on the basis of the extended Avrami theory. If the sideway velocity depends only on the instant value of the applied field, the volume fraction of the reversed area is expressed as q ( E )=1-exp (- f - d Φ( E )), where f and d are, respectively, the…
A blue-photoluminescence (PL) band, centered at 2.6 eV, was observed in thermally and chemically oxidized light-emitting porous silicon layers with an efficiency that can exceed 0.1%. The PL decay is found to be independent of excitation intensity and detection wavelength, and to be nonexponential with a characteristi…
We report a dielectric anomaly in several perovskites at intermediate frequencies 10\ensuremath{\le}f\ensuremath{\le}${10}^{7}$ Hz in the temperature range 400 \ifmmode^\circ\else\textdegree\fi{}C \ensuremath{\le}T\ensuremath{\le}800 \ifmmode^\circ\else\textdegree\fi{}C. We have found this dielectric maximum in more t…
Abstract Three new types of fillers for polypropylene are investigated. The first two were derived from burnt rice husk ash (RHA), whereas the third, a wood‐based filler, was processed from oil palm trunk. One important characterization of the composites involves the checking for the actual filler content and filler d…
Abstract Reactive liquid polymers (RLP), carboxyl‐terminated butadiene–acrylonitrile copolymers (CTBN), epoxy‐terminated butadiene–acrylonitrile copolymers (ETBN), amine‐terminated butadiene–acrylonitrile copolymers (ATBN) of different molecular weights (from 2200 to 6500 g/mol), and a nonfunctional butadiene–acryloni…
Diffraction approaches suggest that some quasicrystal structures can be described as hierarchical packing of atomic clusters. When treated as spherical potentials, these clusters may contain ``magic numbers'' of electrons which allow exact filling of the electronic shells of the hierarchy of wells. Physical propeties…
Abstract Polyimide resists developable with basic aqueous solutions were realized by polyamic acid esters with phenol moieties (PPh's) and naphthoquinone diazides. The polyimide precursors (PPh's) were synthesized from diamines and dicarboxylic acids that have phenol moieties through ester linkage. A selective reactio…
Indium oxide (In2O3) thin films doped with either germanium or silicon were prepared by using a radio-frequency magnetron sputtering method. The target was the In2O3 powder mixed with either Ge or Si powder. The resistivities of the films were compared with that of the film doped with tin (ITO). The Ge and Si dopings…
We have studied focused electron beam induced deposition from W(CO)6 at beam primary energies between 20 and 0.06 keV. Submicrometer resolution with 4 nA beam current was maintained at very low primary energies using a retarding field configuration. Decomposition cross sections of W(CO)6 for primary energies below abo…
We report the vapor phase growth of partially filled graphitic fibers, 20-30 nm in diameter and up to a micron in length, during a manganese catalyzed carbon electric arc discharge. The fiber morphology resembles that of catalytic chemical vapor deposited carbon filaments but the inside hollow contains intermittent pr…
The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires wi…
Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” opt…
Abstract The effect of the molecular weight and acrylonitrile (AN) content of the styrene–acrylonitrile copolymer (SAN) on the morphology, mechanical properties, and rheological properties of acrylonitrile–butadiene–styrene terpolymer/poly(methyl methacrylate) (ABS)/PMMA (60/40 by weight) blends were studied. When the…
Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 Å/min, which is much higher than that of the ordinary evaporation. Hall e…
Crystal-field parameters (B k,m ) were obtained for LaOBr doped with Tm 3+ from the analysis of luminescence spectra. The crystal-field Hamiltonian H CEF = Sigma km B km + Sigma i C km (r i ) for the C 4v symmetry comprises five non-zero B k,m parameters. The results of model crystal-field calculations in C 4v symmetr…