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Transient photoluminescence and excited-state optical absorption in trigonal selenium

Chunying Chen、M. A. Kastner、L. H. Robins1985-07-15Physical review. B, Condensed matter

The results of an investigation of the transient mid-gap photoluminescence (PL) and photo-induced optical absorption in trigonal Se are presented. Direct evidence is found for a barrier of 35\ifmmode\pm\else\textpm\fi{}5 meV to trapping of free excitons at the PL center. All the features of the PL, including the high-…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Absorption near band edges in heavily doped GaAs

W. Sritrakool、V. Sa‐yakanit、H. R. Glyde1985-07-15Physical review. B, Condensed matter

The optical-absorption coefficient \ensuremath{\alpha}(\ensuremath{\omega}) in heavily doped n- and p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME)…

Semiconductor Quantum Structures and DevicesZnO doping and propertiesQuantum and electron transport phenomena

Electronic structures of lithium metasilicate and lithium disilicate

W. Y. Ching、Yaping Li、B. W. Veal 等 4 位作者1985-07-15Physical review. B, Condensed matter

The electronic structures of lithium metasilicate (${\mathrm{Li}}_{2}$${\mathrm{SiO}}_{3}$) and lithium disilicate (${\mathrm{Li}}_{2}$${\mathrm{Si}}_{2}$${\mathrm{O}}_{5}$) are calculated using a first-principles orthogonalized linear combination of atomic-orbitals method. Results are compared with experimental x-ray…

Semiconductor materials and devicesX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques

5 D 3–5D4 cross relaxation in Tb3+ pairs in CsCdBr3 crystals

P.A.M. Berdowski、M.J.J. Lammers、G. Blasse1985-07-15The Journal of Chemical Physics

The 5D3–5D4 cross relaxation process of Tb3+ in CsCdBr3 has been evaluated by analysis of the decay curves of the 5D3 and 5D4 emission. The temperature dependence of the cross relaxation rate can be explained assuming phonon-assisted processes. The results show that the larger amount of Tb3+ ions is incorporated in pa…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsOptical properties and cooling technologies in crystalline materials

Temperature and stress dependence of Young’s modulus in semiconducting barium titanate ceramics

Gerhard Mader、H. Meixner、Peter Kleinschmidt1985-07-15Journal of Applied Physics

In order to study the temperature and stress dependence of Young’s modulus in semiconducting barium titanate ceramics, the longitudinal sound velocity was measured at a frequency of 5 MHz in the temperature range of 20–180 °C. It is striking that at temperatures above the Curie point (Tc=120 °C) the sound velocity rea…

Ferroelectric and Piezoelectric MaterialsAcoustic Wave Resonator TechnologiesThermal properties of materials

Dielectric response of a semi-infinite layered electron gas and Raman scattering from its bulk and surface plasmons

J. K. Jain、Philip B. Allen1985-07-15Physical review. B, Condensed matter

An exact solution of the random-phase-approximation equations is worked out for the density-density correlation function of a semi-infinite system of two-dimensional electron-gas layers, with different dielectrics outside and inside the layered system. From this solution, analytic formulas are derived for the dispersi…

Electron and X-Ray Spectroscopy TechniquesSurface Roughness and Optical MeasurementsSurface and Thin Film Phenomena

1/fnoise of metals: A case for extrinsic origin

John H. Scofield、J. V. Mantese、Watt W. Webb1985-07-15Physical review. B, Condensed matter

Small multiprobe resistors have been fabricated from continuous metal films of Ag, Al, Au, Cr, Cu, Mo, Nb, Ni, Pt, and W deposited under various conditions. Each shows some reproducible level of flicker (1/f) noise. This study implicates carrier scattering by extrinsic defects or impurities as the source of the resist…

Thermal properties of materialsAdvanced Thermodynamics and Statistical MechanicsSurface and Thin Film Phenomena

Momentum-resolved inverse photoemission study of nickel surfaces

A. Goldmann、M. Donath、Werner Altmann 等 4 位作者1985-07-15Physical review. B, Condensed matter

Momentum-resolved inverse photoemission spectra from Ni(001), Ni(110), and Ni(111) have been measured. The results are presented in terms of final-state dispersions E(k${\ensuremath{\rightarrow}}_{\ensuremath{\parallel}}$) and compared to theoretical predictions on the basis of the bulk direct-transition model. Good a…

Advanced Chemical Physics StudiesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Properties of CeO_2 thin films prepared by oxygen-ion-assisted deposition

R. P. Netterfield、W. G. Sainty、Phil Martin 等 4 位作者1985-07-15Applied Optics

Thin films have been prepared by electron-beam evaporation of CeO2, where the growing film has been bombarded with oxygen ions. The packing density of the films has been increased from ∼0.55 without ion bombardment to unity with bombardment as determined by moisture adsorption measurements. The refractive index, extin…

Catalytic Processes in Materials ScienceCopper-based nanomaterials and applicationsIon-surface interactions and analysis

Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates

R. People1985-07-15Physical review. B, Condensed matter

Estimates of the indirect band gap for coherently strained alloys of ${\mathrm{Ge}}_{\mathrm{x}}$${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$ on Si〈001〉 are given for x in the range 0\ensuremath{\le}x\ensuremath{\le}0.75. The present results were obtained by combining x-ray diffraction data with relevant defor…

Photonic and Optical DevicesSilicon Nanostructures and PhotoluminescenceMechanical and Optical Resonators

Electroless deposition of cadmium stannate, zinc oxide, and aluminum-doped zinc oxide films

D. Raviendra、Jeewan Sharma1985-07-15Journal of Applied Physics

Transparent conducting films of cadmium stannate (Cd2SnO4), zinc oxide, and aluminum-doped zinc oxide have been made by a simple, economical electroless deposition technique. The as-deposited films of cadmium stannate have a 75% transmittance in the visible, 48% reflectance in the IR, and a band gap of 2.7 eV. Its res…

ZnO doping and propertiesCopper-based nanomaterials and applicationsElectronic and Structural Properties of Oxides

Electronic structure of LiZnN: Interstitial insertion rule

A. E. Carlsson、Alex Zunger、D. M. Wood1985-07-15Physical review. B, Condensed matter

LiZnN, like other Nowotny-Juza filled tetrahedral ${A}^{\mathrm{I}{B}^{\mathrm{II}{C}^{\mathrm{V}}}}$ compounds, consists of a ${B}^{\mathrm{II}{C}^{\mathrm{V}}}$ zinc-blende lattice with the ${A}^{\mathrm{I}}$ atoms filling half of the available tetrahedral interstitial sites. Using band calculations we deduce an ``i…

Advanced ceramic materials synthesisMetal and Thin Film MechanicsBoron and Carbon Nanomaterials Research

New method for vitrifying water and other liquids by rapid cooling of their aerosols

Erwin Mayer1985-07-15Journal of Applied Physics

A method for the vitrification of pure liquid water and dilute aqueous solutions is described which is the only one without a liquid cryomedium for heat transfer: rapid cooling of aqueous aerosol droplets on a solid cryoplate. This method is not limited to water and aqueous solutions, but can be used for the vitrifica…

Geology and Paleoclimatology ResearchMaterial Dynamics and Propertiesnanoparticles nucleation surface interactions

Dislocation patterning in fatigued metals as a result of dynamical instabilities

D. Walgraef、Elias C. Aifantis1985-07-15Journal of Applied Physics

The nucleation of persistent slip bands in stressed materials is described as a cooperative phenomenon for dislocation populations. It is the competition between their mobility and their nonlinear interactions (creation, annihilation, and pinning) which causes the instability of uniform dislocation distributions versu…

Microstructure and mechanical propertiesMicrostructure and Mechanical Properties of SteelsElectromagnetic Effects on Materials

First-order transition to a metallic state in polyacetylene: A strong-coupling polaronic metal

Steven A. Kivelson、A. J. Heeger1985-07-15Physical Review Letters

We present a theory of the first-order transition to the metallic state in polyacetylene in terms of a crossover from a lattice of charged solitons to a regular array of polaronlike distortions. The polaronic metal is shown to have a strong indirect attractive interaction, ${\mathrm{U}}^{\mathrm{*}}$\ensuremath{\simeq…

Conducting polymers and applicationsMechanical and Optical ResonatorsAnalytical Chemistry and Sensors

Structural information from the Raman spectrum of amorphous silicon

David Beeman、Raphael Tsu、M. F. Thorpe1985-07-15OpenAlex

The Raman scattering from various model structures for amorphous silicon is computed. It is shown that the width of the ``optic peak'' increases roughly linearly with the rms bond-angle distortion \ensuremath{\Delta}${\ensuremath{\theta}}_{b}$ of the network. The experimentally observed linewidths lead to 7.7\ifmmode^…

Glass properties and applicationsThin-Film Transistor TechnologiesPhase-change materials and chalcogenides

Dynamics and statics of the ferroelectric phase transition in PbHPO4

D. J. Lockwood、Nobutada OHNO、R. J. Nelmes 等 4 位作者1985-07-10Journal of Physics C Solid State Physics

The Raman spectrum of PbHPO 4 has been studied as a function of temperature between 10 and 320K (T c approximately=310K). A soft-mode is observed whose frequency has a temperature dependence that is close to, but not the same as, the spontaneous polarisation which follows the proton ordering. Several of the Raman line…

Nonlinear Optical Materials ResearchSolid-state spectroscopy and crystallography

Metal-non-metal and other interfaces: the role of image interactions

A. M. Stoneham、P. Tasker1985-07-10Journal of Physics C Solid State Physics

The authors argue that many phenomena associated with metal/nonmetal interfaces and similar situations with a large dielectric constant mismatch can be understood in terms of the image interactions due to charges in the nonmetal. The effects are additional to the traditional interactions, and are especially significan…

Semiconductor materials and devicesTransition Metal Oxide NanomaterialsElectronic and Structural Properties of Oxides

Debye and non-Debye relaxation

Robert M. Hill、L. A. Dissado1985-07-10Journal of Physics C Solid State Physics

Debye relaxation behaviour is unique in the sense that all memory of excitation is instantaneously lost. It is shown that the presence of higher-frequency relaxations for components of the same dipole degrades this property by extending the memory into the timescale of relaxation, thus giving a nonDebye behaviour whic…

Ferroelectric and Piezoelectric MaterialsMaterial Dynamics and PropertiesSolid-state spectroscopy and crystallography

Network Structure in Polymers from Bisphthalonitriles

Jeffrey A. Hinkley1985-07-09ACS symposium series

Bisphthalonitrile monomers were cured neat, with nucleophilic and redox co-reactants, or in combination with a reactive diluent. Dynamic mechanical measurements on the resulting polymers from -150 to +300°C turn up several differences attributable to differences in network structure. Rheovibron results were supplement…

Polymer Nanocomposites and PropertiesEpoxy Resin Curing ProcessesSynthesis and properties of polymers