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Thickness dependence of DC conductivity of amorphous Se and binary amorphous SeTe, SeGe, and SeSb films

R.M. Mehra、Hemant Kumar、Surinder Koul 等 4 位作者1984-05-16physica status solidi (a)

The dc conductivity of a-Se and binary amorphous SeTe, SeGe, and SeSb films is measured as a function of temperature (80 to 300 K) and film thickness (500 to 2000 Å). It is found that except for SeSb films, the conduction in all the samples takes place in the tails of localized states via thermally activated tunne…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Thermal conductivity of germanium doped with silicon, tin, and aluminium

S. R. Bakhchieva、N. Kekelidze、M. G. Kekua1984-05-16physica status solidi (a)

The thermal conductivity of Ge doped with electroneutral impurities, Si, Sn and the acceptor impurity, Al, is investigated in the temperature range 80 to 400 K. It is established that at equal impurity concentrations the temperature dependence of the thermal conductivity in Ge doped with the electroactive impurity Al,…

Advanced Thermoelectric Materials and DevicesAdvancements in Semiconductor Devices and Circuit DesignThermal properties of materials

Dislocation motion and plasticity in MgO single crystals

F. Appel、Marion Bartsch、U. Messerschmidt 等 5 位作者1984-05-16physica status solidi (a)

The dislocation dynamics in MgO single crystals containing some hundred ppm of aliovalant impurities is investigated by three experimental techniques: in-situ deformation experiments in the high-voltage electron microscope, stress pulse-etching experiments on individual dislocations, and macroscopic deformation experi…

Microstructure and mechanical propertiesHigh-pressure geophysics and materialsSurface and Thin Film Phenomena

Thermoelectric figure of merit of the system (GeTe)1−x(AgSbTe2)x

S. K. Placheova1984-05-16physica status solidi (a)

The thermoelectric properties of polycrystalline samples of GeTe-rich side solid solutions (GeTe)1−x·(AgSbTe2)x, for the compositions x = 0.00, 0.10, 0.15, 0.20, and 0.29 are investigated. The temperature dependences of the Seebeck coefficient and the electrical resistivity and the dependences of the total thermal con…

Advanced Thermoelectric Materials and DevicesPhase-change materials and chalcogenidesOptical properties and cooling technologies in crystalline materials

Real-time depth measurement and display using Fresnel diffraction and white-light processing

James R. Leger、Michael A. Snyder1984-05-15Applied Optics

An optical method of measuring and displaying depth information has been developed which is based on the Fresnel diffraction properties of coherently illuminated gratings. Cosine modulated gratings are found to be more flexible than simple gratings for depth measurement. A pair of gratings crossed at right angles is u…

Advanced optical system designAdvanced Measurement and Metrology TechniquesOptical Coatings and Gratings

Raman scattering from solid silicon at the melting temperature

R. J. Nemanich、D. K. Biegelsen、R. A. Street 等 4 位作者1984-05-15Physical review. B, Condensed matter

The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6-\ensuremath{\mu}m radiation from a C${\mathrm{O}}_{2}$ laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the si…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchSilicon Nanostructures and Photoluminescence

Separation of one- and many-electron effects in the excitation spectra of3dimpurities in semiconductors

A. Fazzio、Marília Caldas、Alex Zunger1984-05-15Physical review. B, Condensed matter

We present a new multiplet theory that separates mean-field from multiplet effects in the excitation and donor-acceptor ionization spectra of localized impurities. Analysis of the experimental data for all $3d$ impurities in ZnO, ZnS, ZnSe, and GaP for which sufficient data exist and for the bulk Mott insulators CoO,…

Semiconductor Quantum Structures and DevicesZnO doping and propertiesGa2O3 and related materials

Photoemission study of WC(0001)

P.M. Stefan、M. L. Shek、I. Lindau 等 8 位作者1984-05-15Physical review. B, Condensed matter

We report results of photoemission experiments and a new bulk band-structure calculation for monotungsten carbide (WC). Three types of photoemission experiment were performed on a WC(0001) surface, with the use of synchrotron radiation. Normal-emission angle-resolved spectra in the range $10\ensuremath{\le}h\ensuremat…

Metal and Thin Film MechanicsDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of Oxides

c-axis conductivity and thermoelectric power in graphite intercalation compounds

Kō Sugihara1984-05-15Physical review. B, Condensed matter

The measurements of the $c$-axis conductivity ${\ensuremath{\sigma}}_{c}$ at room temperature for acceptor graphite intercalation compounds typically show very small values of ${\ensuremath{\sigma}}_{c}$, ranging from \ensuremath{\sim}${10}^{\ensuremath{-}1}$ to \ensuremath{\sim}10 ${(\mathrm{\ensuremath{\Omega}}\math…

Advancements in Battery MaterialsGraphene research and applicationsThermal properties of materials

Raman spectrum and lattice dynamics of GaGeTe

E. López‐Cruz、M. Cardona、E. Martínez1984-05-15Physical review. B, Condensed matter

The Raman spectrum of the defect tetrahedral layer compound GaGeTe at 297 and 80 K has been measured. Six prominent phonons, at 296, 286, 263, 178, 168, and 66 ${\mathrm{cm}}^{\ensuremath{-}1}$, have been observed at 297 K. These phonons are compared with theoretical predictions based on the planar force constants of…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Optical constants of arc-evaporated amorphous carbon in the far-infrared spectral region

J.S. Knoll、J. Geiger1984-05-15Physical review. B, Condensed matter

The optical constants $n$ and $k$ of arc-evaporated amorphous carbon films between 400 and 4800 ${\mathrm{cm}}^{\ensuremath{-}1}$ were determined by measuring the transmittance and the reflectance of the films. Two broad bands with maxima at 703 and 1233 ${\mathrm{cm}}^{\ensuremath{-}1}$ in the spectral dependence of…

Diamond and Carbon-based Materials ResearchThin-Film Transistor TechnologiesNonlinear Optical Materials Studies

Molecular-dynamics studies of grain-boundary diffusion. II. Vacancy migration, diffusion mechanism, and kinetics

Thomas Kwok、Paul S. Ho、Sidney Yip1984-05-15Physical review. B, Condensed matter

Vacancy jumps in a bicrystal model of $\ensuremath{\Sigma}=5$ (36.9\ifmmode^\circ\else\textdegree\fi{}) [001] tilt boundary in bcc Fe have been simulated at temperatures of 1300, 1400, and 1500 K by molecular dynamics with the use of the empirical Johnson potential. The results confirm the dominance of a vacancy mecha…

Microstructure and mechanical propertiesMicrostructure and Mechanical Properties of SteelsMagnetic Properties and Applications

Surface plasmon-enhanced Raman scattering at thin silver films

Robert M. Corn、Michael R. Philpott1984-05-15The Journal of Chemical Physics

Raman spectra are reported for liquids and Langmuir films enhanced by the electromagnetic fields of plasmon surface polaritons at flat silver surfaces. The Kretschmann prism coupling configuration is used to excite the incident surface polariton and to couple out the Raman shifted surface wave. The spectra are interpr…

Gold and Silver Nanoparticles Synthesis and ApplicationsPlasmonic and Surface Plasmon ResearchNonlinear Optical Materials Studies

Molecular-dynamics studies of grain-boundary diffusion. I. Structural properties and mobility of point defects

Thomas Kwok、Paul S. Ho、Sidney Yip1984-05-15Physical review. B, Condensed matter

The structural relaxation of a high-angle grain boundary at elevated temperatures has been simulated by molecular dynamics with the use of a bicrystal model composed of 399 atoms. The system studied was a $\ensuremath{\Sigma}=5$ (36.9\ifmmode^\circ\else\textdegree\fi{}), [001] tilt boundary with interatomic interactio…

Microstructure and mechanical propertiesHigh-pressure geophysics and materialsMechanical stress and fatigue analysis

Stress dependence of the charge-density-wave transitions in NbSe3and TaS3

Robert Sheldon Lear、M. J. Skove、E. P. Stillwell 等 4 位作者1984-05-15Physical review. B, Condensed matter

We have measured the change in the charge-density-wave (CDW) transitions in monoclinic Nb${\mathrm{Se}}_{3}$ and orthorhombic Ta${\mathrm{S}}_{3}$ caused by stress applied along the high-symmetry (growth) axis. For the upper transition in Nb${\mathrm{Se}}_{3}$, $\frac{d{T}_{1}}{d\ensuremath{\sigma}}=\ensuremath{-}4.4$…

Physics of Superconductivity and MagnetismOrganic and Molecular Conductors ResearchIron-based superconductors research

Surface charges and subsurface space-charge distribution in magnesium oxides containing dissolved traces of water

B.V. King、Friedemann Freund1984-05-15Physical review. B, Condensed matter

MgO crystals which contain dissolved traces of ${\mathrm{H}}_{2}$O eventually acquire an excess oxygen content, $\mathrm{Mg}{\mathrm{O}}_{1+\ensuremath{\delta}}$, because O${\mathrm{H}}^{\ensuremath{-}}$ pairs, associated with cation vacancies, convert in part into molecular ${\mathrm{H}}_{2}$ and peroxy anions, ${\ma…

Multiferroics and related materialsElectronic and Structural Properties of OxidesMagnesium Oxide Properties and Applications

On the nature of space charge and dipolar relaxations in Kapton film

Ruchi Bhardwaj、J. K. Quamara、B. L. Sharma 等 4 位作者1984-05-14Journal of Physics D Applied Physics

An attempt has been made to distinguish space charge and dipolar polarisation in Kapton-H polymer thin film. The conclusions drawn on the basis of thermally stimulated discharge current (TSDC) investigations are further confirmed by thermally stimulated polarisation current (TSPC) studies. The other techniques adopted…

High voltage insulation and dielectric phenomenaPower Transformer Diagnostics and InsulationMicrowave and Dielectric Measurement Techniques

Localization of5fElectrons in Americium: A Photoemission Study

J. R. Naegele、L. Manes、J.C. Spirlet 等 4 位作者1984-05-14Physical Review Letters

X-ray and high-resolution uv photoemission spectroscopy of the conduction band of Am metal directly reveal that the $5f$ electrons in Am are localized, in contrast to the $5f$ electrons in the lighter actinide metals. The observed $5f$ final-state multiplet structure arises from a trivalent $5{f}^{6}$ Am ground state.…

Rare-earth and actinide compoundsElectron and X-Ray Spectroscopy TechniquesAdvanced Materials Characterization Techniques

Transition-Metal Monoxides: Band or Mott Insulators

K. Terakura、A. R. Williams、T. Oguchi 等 4 位作者1984-05-14Physical Review Letters

We argue that the widely held view that MnO, FeO, CoO, and NiO are Mott insulators is incorrect. Intra-atomic potential energies do not dominate interatomic kinetic energies, to the extent commonly believed; both are 1-2 eV in magnitude. A measure of the importance of interatomic effects is our finding that both the c…

Magnetic and transport properties of perovskites and related materialsAdvanced Condensed Matter PhysicsCatalysis and Oxidation Reactions

Monte Carlo Calculation for Electromagnetic-Wave Scattering from Random Rough Surfaces

N. Garcı́a、E. Stoll1984-05-14Physical Review Letters

A Monte Carlo calculation for light intensities scattered from a random Gaussian-correlated surface is presented for the first time. It is shown that small randomness on a grating surface can considerably change the intensities and, in particular, the surface polariton resonances. These results should be used to check…

Optical Coatings and GratingsNear-Field Optical MicroscopySurface Roughness and Optical Measurements