Materials Literature
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Theoretical and experimental advances in the techniques available for solving crystal structures have led to the development of several powerful techniques for solving complex structures, including those of proteins. In this 1995 book, Michael Woolfson and Fan Hai-Fu describe all the available methods and how they are…
We demonstrate a technique to study self-diffusion in germanium, using isotope heterostructures ${(}^{70}$Ge${/}^{74}$Ge). After interdiffusing the nominally undoped layers of $^{70}\mathrm{Ge}$ and $^{74}\mathrm{Ge}$ at temperatures between 543 and 690 \ifmmode^\circ\else\textdegree\fi{}C, the diffusion profiles are…
We perform tight-binding estimates and linear muffin-tin-orbital calculations of the ${\mathrm{\ensuremath{\Delta}}}_{0}$, ${\mathrm{\ensuremath{\Delta}}}_{0}^{\ensuremath{'}}$, and ${\mathrm{\ensuremath{\Delta}}}^{\mathrm{\ensuremath{-}}}$ spin-orbit coupling parameters of II-VI zinc-blende materials. Good agreement…
Sonoluminescence (SL), the phenomenon of light emission associated with the collapse of bubble oscillating under ultrasonic pressure field has been studied by solving the conservation equations for the gas inside bubble analytically. Heat transfer in the liquid layer adjacent to the bubble wall has also been considere…
Conductivity and field-effect mobility measurements using metal-insulator-semiconductor field-effect-transistor devices and acceptor density measurements using metal-insulator- semiconductor (MIS) diodes are presented. The measurements were made on thin polymer films of the organic semiconductor, poly(β′-dodecyloxy-α,…
Two important observations for porous silicon, the saturation and the voltage selective quenching of photoluminescence, are presented. Their similarities are pointed out and discussed in two phenomenological models: the saturation of the absorption and an Auger effect. The consequences of carrier accumulation in quant…
The experimental work by Levine and Bethea [J. Chem. Phys. 65, 2429 (1976)] and by Ward and Miller [Phys. Rev. A 19, 826 (1979)] on the hyperpolarizability of solvated water and water in the gas phase, respectively, showed a very substantial effect of the solvent on the measured hyperpolarizability. The sign of the hy…
The electronic structures of the stable face-centered-icosahedral alloy ${\mathrm{Al}}_{70}$${\mathrm{Pd}}_{20}$${\mathrm{Mn}}_{10}$ and of a hierarchy of rational approximants to the icosahedral phase have been calculated using ab initio pseudopotential, linear-muffin-tin-orbital (LMTO), and tight-binding (TB)-LMTO t…
Magnetotransport properties have been investigated for metallic crystals of La 1- x Sr x CoO 3 ( x =0.20 and 0.30) with perovskite structure. Around the ferromagnetic transition temperature ( T c ), fairly large negative magnetoresistance (MR) has been found. The magnitude of the MR is proportional to square of the ma…
Induced ferroelectricity was observed in epitaxially grown BaxSr1−xTiO3 (BST) thin films with thicknesses of about 220 nm. The BST films with various Ba content were deposited at 600 °C on Pt/MgO substrates, by radio frequency magnetron sputtering with double targets, BaTiO3 and SrTiO3. The epitaxial growth of the BST…
We study the surface waves of polyethyleneoxide (PEO) in water by surface heterodyne light scattering. The complete capillary wave–elastic wave crossover is observed as the polymer concentration is increased. At high polymer concentrations, the peak frequencies of the experimental power spectra increase as the polymer…
We report the results of ab initio total-energy pseudopotential calculations, high-pressure angle-dispersive powder x-ray diffraction, and vibrational spectroscopy measurements on the IV-VI layered semiconductor germanium selenide (GeSe). The calculated hydrostatic pressure dependence of the crystal structure is found…
The epitaxial-like BaTiO3 (BTO) films with good ferroelectricity are obtained both on (001)SrTiO3 (STO) single crystal and on CeO2 buffered silicon substrate by pulsed laser deposition. The deposition parameters need to be stringently controlled in order to grow BTO films with good crystallinity. The BTO films grown o…
The nature of the metal-insulator (MI) transition of α -(ET) 2 I 3 has been studied theoretically. The effect of the on-site Coulomb interaction has been investigated at absolute zero within the Hartree-Fock approximation. If the Coulomb interaction exceeds some critical value, charge transfer occurs between different…
The lifetimes of the excited state of the tetrahedrally coordinated ${\mathrm{Cr}}^{4+}$ ion in several garnets were measured in the temperature range between 15 and 380 K. Both the nonradiative and radiative transition rates increase with temperature due to the coupling of phonons to the electronic states. This tempe…
Switchable polarization can be suppressed in Pb(Zr,Ti)O3 thin films by optical, thermal, electrical, and reducing processes. The optical suppression effect occurs by biasing the ferroelectric near the switching threshold and illuminating the material with band gap light; the thermal suppression effect occurs by biasin…
The intrinsic decay dynamics of pair excitations involving a deep donor and a shallow acceptor in chemical-vapor-deposited diamond is studied by time-resolved photoluminescence. Appropriate excitation conditions result in a distinctive decay behavior of individual donor-acceptor pair excitations, with extremely short…
Electronic structures of ${\mathrm{MoS}}_{2}$ and ${\mathrm{MoSe}}_{2}$ surfaces are investigated by first-principles electronic-structure calculations. The ultrasoft pseudopotential by Vanderbilt is used to perform band calculations with a plane-wave basis. Calculated band structures are consistent with recent calcul…
Fused Silica is the material of choice for UV optical systems such as the projection optics in microlithography systems. Unfortunately fused silica is not stable under UV irradition and undergoes compaction and color center formation. The UV damage properties of fused silica have been the subject of a number of studie…
Synthetic diamonds have been grown from metal melts containing silicon, at high pressures and high temperatures. The absorption and photoluminescence spectra have been investigated in the temperature range 1.8--77 K. A 12-line fine structure is observed close to 1.682 eV, and this can be divided into three similar gro…