Materials Literature
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Developments of single crystal ED patterns in melt-crystallized poly(trimethylene terephthalate) (PTT) have been successfully achieved. Five different zonal electron diffraction patterns containing a total of 14 independent reflections were obtained. The PTT structure under strain-free conditions was identified as a t…
Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two at…
Pr 0.5 Ca 0.5 Mn 0.99 Cr 0.01 O 3 shows several anomalous properties: Field-cooled (FC) resistivity at 10 K is several orders of magnitude lower than the zero-field cooled (ZFC) value, magnetoresistance isotherm at 125 K is asymmetric about the origin (H=0 T) and resistivity and magnetization are hysteretic between fi…
The giant intrinsic hysteresis as a function of hydrogen concentration $x$ in the optical and electrical properties of the archetypal switchable mirror ${\mathrm{YH}}_{x}$ is eliminated by alloying Y with the chemically similar La. The ${\mathrm{La}}_{1\ensuremath{-}z}{\mathrm{Y}}_{z}{\mathrm{H}}_{x}$ films with $z\en…
The microstructure of polycrystalline ZnO thin films grown on amorphous fused quartz has been studied by transmission electron microscopy and electron energy loss spectroscopy (EELS). The optical functions of the grain and grain boundary of ZnO acquired from EELS are compared to elucidate the mechanism of the formatio…
Thickness dependence of the soft mode E(1TO) of tetraganol lead titanate thin film, deposited on Pt-coated Si by a chemical solution deposition, was determined with Raman scattering measurements. A downshift of the soft mode was attributed to the residual stress in the thin film, which was estimated in the range of 1.…
The various components in the N 1s photoemission spectra of amorphous carbon nitride are identified by measuring their photon energy dependence and comparing the experimental results with ab initio multiple scattering calculations. The intensity modulations with photon energy are due to the extended x-ray absorption f…
Carbon nitride films were deposited using a low pressure, dual ion beam system consisting of a filtered cathodic vacuum arc and a plasma beam source for carbon and nitrogen ions, respectively. This system maintains highly ionized beams even at high nitrogen fluxes, unlike in single beam systems. Film composition and b…
In a power transformer, high levels of partial discharge activity may lead to an insulation failure. If a partial discharge (PD) could be detected and located before the insulation fails, the transformer could be repaired or replaced before any consumers connected to the transformer lose supply. A technique is describ…
The dynamics of two fragile glass forming liquids was studied as a function of temperature and pressure using dynamic light scattering. On the basis of measured data we evaluated the pressure and temperature scaling of the alpha relaxation. All the isotherms can be superimposed and form a master curve when the reduced…
Ta 2 O 5 films deposited on Si substrates were investigated using transmission Fourier-transform infrared spectroscopy. We found a new absorption peak at 2340 cm−1 that can be characterized as a stretching vibration mode due to Ta=O bonds in the films. This peak appeared following annealing in O2 ambient, but not in N…
Recent studies have shown the application of amorphous carbon as a semiconductor in C/Si heterojunction photovoltaic solar cells. In this letter, we report the rectifying current–voltage characteristics of the phosphorus-doped carbon/undoped-carbon (n-C/p-C) junction. The p- and n-carbon films were deposited by pyroly…
In situ transmission electron microscopy study of electric field-induced cracking has been conducted on 〈001〉 oriented 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 crystal. Fracture of the 90° domain boundary was directly observed in the tetragonal area under both static and alternating electric fields. The field strength required…
We have measured high spatial/depth resolution (∼2–3 μm) thermal conductivity (κ) at 300 K of both fully and partially coalesced GaN/sapphire (0001) samples fabricated by lateral epitaxial overgrowth. On the fully coalesced sample we found 1.86W/cm K<κ<2.05 W/cm K over a distance of approximately 50 μm.…
A phenomenological model was proposed which describes frequency dispersion of nonlinear dielectric response of relaxor ferroelectrics (relaxors) as a result of dispersion of their linear dielectric permittivity. The model was applied to Pb(Mg(1/3)Nb(2/3))O3 (PMN) relaxor. It provided a good qualitative description of…
The dielectric properties, ferroelectric polarization, and piezoelectric strain behavior of Ba(Ti1−xZrx)O3 (x=0.05 and 0.08) single crystals are studied for different crystal orientations. The study of dielectric properties suggests that the three phase transitions in BaTiO3 are pinched by substituting Ti with Zr but…
A class of promising permanent-magnet materials with an appreciable high-temperature coercivity of 8.6 kOe at 500 °C is reported. The Sm–Co–Cu–Ti magnets are prepared by arc melting and require a suitable heat treatment. Magnetization measurements as a function of temperature and x-ray diffraction patterns indicate th…
Magnetostriction measurements have been made in an ordered Fe3Pt single crystal with degree of order of about 0.8, which exhibits a cubic-tetragonal martensitic transformation at 97 K. The specimen was cooled down to 4.2 K without magnetic field, and then a magnetic field of 4 T is applied to the specimen along 〈001〉…
Low temperature resistivity of CMR manganites is investigated. At the ground state, conduction electrons are perfectly spin polarized, which is called half-metallic. From one-magnon scattering processes, it is discussed that the resistivity of a half metal as a function of temperature scales as rho(T) - rho(0) propto…
An experimental proof-of-principle of an enhanced Z3DT (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z3DT at 300 K for a (001) oriented Si(20 Å)/Ge(20 Å) superlattice is 0.1 using κ=5 Wm−1 K−1, for the in-plane thermal conductivity, whi…