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Raman scattering by intervalley carrier-density fluctuations inn-type Si: Intervalley and intravalley mechanisms

R. Contreras、Anil K. Sood、M. Cardona1985-07-15Physical review. B, Condensed matter

We present an extensive study of Raman scattering by intervalley density fluctuations in n-type Si for a wide range of electron concentrations (8\ifmmode\times\else\texttimes\fi{}${10}^{18}$${\mathrm{eqN}}_{e}$${10}^{20}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$), temperatures (80--473 K), and laser frequencies (1.1…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceIon-surface interactions and analysis

Photophysics of a Zn(Cd)S phosphor on an extended time scale

Aditya Sharma、M. C. Palazzotto、M. R. V. Sahyun1985-07-15Journal of Applied Physics

We have studied the photophysics of a Zn(Cd)S:Ag phosphor, in powder form under ambient conditions, over a time domain extending from picoseconds to milliseconds. Pulsed laser luminescence techniques and time-resolved dielectric loss spectrometry have been employed. We propose mechanisms to interpret the results and c…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesPhotoreceptor and optogenetics research

Valence- and conduction-band structure of the sapphire (11¯02) surface

W. J. Gignac、R. Stanley Williams、Steven P. Kowalczyk1985-07-15Physical review. B, Condensed matter

X-ray photoelectron (XPS) and electron-energy-loss spectroscopies have been employed to investigate the valence- and conduction-band densities of states of the sapphire (11\ifmmode\bar\else\textasciimacron\fi{}02) surface. The photoemission spectrum of the valence-band region has been adjusted to remove cross-section…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesElectronic and Structural Properties of Oxides

Atomic structure of the Cu/Si(111) interface by high-energy core-level Auger electron diffraction

S. A. Chambers、S. B. Anderson、J. H. Weaver1985-07-15Physical review. B, Condensed matter

High-energy core-level Auger emission from adsorbed atoms on single-crystal surfaces is accompanied by diffraction and interference effects, similar to those observed in x-ray photoemission. We have used azimuthal anisotropies in the Cu(LMM) intensity at shallow polar angles and a kinematical scattering model to deter…

X-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Optical properties and microstructure of gold–fluorocarbon-polymer composite films

J. Perrin、Bernard Despax、E. Kay1985-07-15Physical review. B, Condensed matter

The optical transmittance of plasma-deposited composite gold--fluorocarbon-polymer thin films is analyzed in terms of effective-medium theories. The effect of increasing gold volume fraction is shown to be correctly described by the Sheng model, provided the gold-cluster and polymer-inclusion sizes and shapes analyzed…

Semiconductor materials and devicesCopper Interconnects and ReliabilitySurface and Thin Film Phenomena

Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution

J. Massies、J. P. Contour1985-07-15Journal of Applied Physics

X-ray photoelectron spectroscopy has been performed in order to investigate the effects of the chemical etching of GaAs {001} surfaces by the H2SO4/H2O2/H2O solution used following the procedure currently practiced in the molecular-beam-epitaxy technique. It is demonstrated that, in contrast to what is generally belie…

Semiconductor materials and devicesAdvancements in Photolithography TechniquesElectron and X-Ray Spectroscopy Techniques

Green’s-function approach to nonlinear electronic transport for an electron-impurity-phonon system in a strong electric field

X. L. Lei、C. S. Ting1985-07-15Physical review. B, Condensed matter

A Green's-function approach to nonlinear electronic transport in a static electric field is developed microscopically for the system composed of interacting electrons with impurities and phonons. The essential idea is to separate the center-of-mass motion from the relative motion of electrons. An electron temperature…

Quantum and electron transport phenomenaMolecular Junctions and NanostructuresThermal properties of materials

Transient photoluminescence and excited-state optical absorption in trigonal selenium

Chunying Chen、M. A. Kastner、L. H. Robins1985-07-15Physical review. B, Condensed matter

The results of an investigation of the transient mid-gap photoluminescence (PL) and photo-induced optical absorption in trigonal Se are presented. Direct evidence is found for a barrier of 35\ifmmode\pm\else\textpm\fi{}5 meV to trapping of free excitons at the PL center. All the features of the PL, including the high-…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography

Absorption near band edges in heavily doped GaAs

W. Sritrakool、V. Sa‐yakanit、H. R. Glyde1985-07-15Physical review. B, Condensed matter

The optical-absorption coefficient \ensuremath{\alpha}(\ensuremath{\omega}) in heavily doped n- and p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME)…

Semiconductor Quantum Structures and DevicesZnO doping and propertiesQuantum and electron transport phenomena

Electronic structures of lithium metasilicate and lithium disilicate

W. Y. Ching、Yaping Li、B. W. Veal 等 4 位作者1985-07-15Physical review. B, Condensed matter

The electronic structures of lithium metasilicate (${\mathrm{Li}}_{2}$${\mathrm{SiO}}_{3}$) and lithium disilicate (${\mathrm{Li}}_{2}$${\mathrm{Si}}_{2}$${\mathrm{O}}_{5}$) are calculated using a first-principles orthogonalized linear combination of atomic-orbitals method. Results are compared with experimental x-ray…

Semiconductor materials and devicesX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques

5 D 3–5D4 cross relaxation in Tb3+ pairs in CsCdBr3 crystals

P.A.M. Berdowski、M.J.J. Lammers、G. Blasse1985-07-15The Journal of Chemical Physics

The 5D3–5D4 cross relaxation process of Tb3+ in CsCdBr3 has been evaluated by analysis of the decay curves of the 5D3 and 5D4 emission. The temperature dependence of the cross relaxation rate can be explained assuming phonon-assisted processes. The results show that the larger amount of Tb3+ ions is incorporated in pa…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsOptical properties and cooling technologies in crystalline materials

Temperature and stress dependence of Young’s modulus in semiconducting barium titanate ceramics

Gerhard Mader、H. Meixner、Peter Kleinschmidt1985-07-15Journal of Applied Physics

In order to study the temperature and stress dependence of Young’s modulus in semiconducting barium titanate ceramics, the longitudinal sound velocity was measured at a frequency of 5 MHz in the temperature range of 20–180 °C. It is striking that at temperatures above the Curie point (Tc=120 °C) the sound velocity rea…

Ferroelectric and Piezoelectric MaterialsAcoustic Wave Resonator TechnologiesThermal properties of materials

Dielectric response of a semi-infinite layered electron gas and Raman scattering from its bulk and surface plasmons

J. K. Jain、Philip B. Allen1985-07-15Physical review. B, Condensed matter

An exact solution of the random-phase-approximation equations is worked out for the density-density correlation function of a semi-infinite system of two-dimensional electron-gas layers, with different dielectrics outside and inside the layered system. From this solution, analytic formulas are derived for the dispersi…

Electron and X-Ray Spectroscopy TechniquesSurface Roughness and Optical MeasurementsSurface and Thin Film Phenomena

1/fnoise of metals: A case for extrinsic origin

John H. Scofield、J. V. Mantese、Watt W. Webb1985-07-15Physical review. B, Condensed matter

Small multiprobe resistors have been fabricated from continuous metal films of Ag, Al, Au, Cr, Cu, Mo, Nb, Ni, Pt, and W deposited under various conditions. Each shows some reproducible level of flicker (1/f) noise. This study implicates carrier scattering by extrinsic defects or impurities as the source of the resist…

Thermal properties of materialsAdvanced Thermodynamics and Statistical MechanicsSurface and Thin Film Phenomena

Momentum-resolved inverse photoemission study of nickel surfaces

A. Goldmann、M. Donath、Werner Altmann 等 4 位作者1985-07-15Physical review. B, Condensed matter

Momentum-resolved inverse photoemission spectra from Ni(001), Ni(110), and Ni(111) have been measured. The results are presented in terms of final-state dispersions E(k${\ensuremath{\rightarrow}}_{\ensuremath{\parallel}}$) and compared to theoretical predictions on the basis of the bulk direct-transition model. Good a…

Advanced Chemical Physics StudiesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Properties of CeO_2 thin films prepared by oxygen-ion-assisted deposition

R. P. Netterfield、W. G. Sainty、Phil Martin 等 4 位作者1985-07-15Applied Optics

Thin films have been prepared by electron-beam evaporation of CeO2, where the growing film has been bombarded with oxygen ions. The packing density of the films has been increased from ∼0.55 without ion bombardment to unity with bombardment as determined by moisture adsorption measurements. The refractive index, extin…

Catalytic Processes in Materials ScienceCopper-based nanomaterials and applicationsIon-surface interactions and analysis

Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates

R. People1985-07-15Physical review. B, Condensed matter

Estimates of the indirect band gap for coherently strained alloys of ${\mathrm{Ge}}_{\mathrm{x}}$${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$ on Si〈001〉 are given for x in the range 0\ensuremath{\le}x\ensuremath{\le}0.75. The present results were obtained by combining x-ray diffraction data with relevant defor…

Photonic and Optical DevicesSilicon Nanostructures and PhotoluminescenceMechanical and Optical Resonators

Electroless deposition of cadmium stannate, zinc oxide, and aluminum-doped zinc oxide films

D. Raviendra、Jeewan Sharma1985-07-15Journal of Applied Physics

Transparent conducting films of cadmium stannate (Cd2SnO4), zinc oxide, and aluminum-doped zinc oxide have been made by a simple, economical electroless deposition technique. The as-deposited films of cadmium stannate have a 75% transmittance in the visible, 48% reflectance in the IR, and a band gap of 2.7 eV. Its res…

ZnO doping and propertiesCopper-based nanomaterials and applicationsElectronic and Structural Properties of Oxides

Electronic structure of LiZnN: Interstitial insertion rule

A. E. Carlsson、Alex Zunger、D. M. Wood1985-07-15Physical review. B, Condensed matter

LiZnN, like other Nowotny-Juza filled tetrahedral ${A}^{\mathrm{I}{B}^{\mathrm{II}{C}^{\mathrm{V}}}}$ compounds, consists of a ${B}^{\mathrm{II}{C}^{\mathrm{V}}}$ zinc-blende lattice with the ${A}^{\mathrm{I}}$ atoms filling half of the available tetrahedral interstitial sites. Using band calculations we deduce an ``i…

Advanced ceramic materials synthesisMetal and Thin Film MechanicsBoron and Carbon Nanomaterials Research

New method for vitrifying water and other liquids by rapid cooling of their aerosols

Erwin Mayer1985-07-15Journal of Applied Physics

A method for the vitrification of pure liquid water and dilute aqueous solutions is described which is the only one without a liquid cryomedium for heat transfer: rapid cooling of aqueous aerosol droplets on a solid cryoplate. This method is not limited to water and aqueous solutions, but can be used for the vitrifica…

Geology and Paleoclimatology ResearchMaterial Dynamics and Propertiesnanoparticles nucleation surface interactions