Materials Literature
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The electrical resistivity of layerd crystalline GeSe has been investigated up to a pressure of 100 kbar and down to liquid-nitrogen temperature by use of a Bridgman anvil device. A pressure-induced first-order phase transition has been observed in single-crystal GeSe near 6 GPa. The high-pressure phase is found to be…
The Mn-intercalated transition metal dichalcogenides Mn 1/4 NbS 2 and Mn 1/4 TaS 2 have been found to be easy-plane type ferromagnets from the magnetization curves, while the magnetization curve of Mn 1/4 NbSe 2 shows a spin flopping behavior, suggesting a helical spin structure along the c -axis. The valency of Mn io…
The dielectric function of orthorhombic GeS has been measured ellipsometrically in the 1.66--5.6-eV photon-energy region as a function of temperature between 84 and 500 K. The second derivatives with respect to frequency of the real and imaginary parts of the dielectric function, obtained numerically from the measured…
The one-dimensional band structures of (tetrabenzoporphyrinato) Ni (II) and (phthalocyaninato) Ni (II) were calculated. The reported band structures include the effects of the stacking perturbation and of the overlap between nearest neighbors. The basis functions for the intermolecular integrals were obtained from a d…
The structure of thin silver films, grown under varying conditions of ion bombardment, are compared by means of their measured structural, optical, and electrical properties. Both the x-ray diffraction results and the dielectric-function measurements suggested that there are voids in our films and that their volume fr…
Theoretical analysis of the defect trapping of ion-implanted hydrogen in metals has been extended in two respects. A new transport formalism has been developed which takes account not only of the diffusion, trapping, and surface release of the hydrogen, which were included in earlier treatments, but also the diffusion…
The characteristic 1.54-μm emission from the rare-earth element erbium implanted in GaAs, InP, and GaP was investigated through 10-K photoluminescence essentially as a function of anneal temperature, time, and method. The strip-heater, forming-gas, and quartz-ampoule anneal methods were utilized in the range of 400 to…
Unoccupied electronic states at the diamond (111) surface are studied by measuring both bulk- and surface-sensitive C 1s partial-yield soft-x-ray absorption spectra. Several absorption features are observed in the bulk band gap below the 289.19-eV bulk-C 1s absorption edge. They are associated with transitions from th…
Stress was determined in oxidized porous silicon layers using x-ray diffraction to measure the substrate curvature. Stress is always compressive and its magnitude depends on oxide quality. The maximum value is reached when the oxide obtained from porous silicon is densified by a high-temperature process and is equival…
Very thin gold films were prepared on glass by ion plating (IP) and by conventional evaporation (CE). Below a certain thickness—∼9 nm for IP and ∼15 nm for CE—the films comprised a metal network; above this thickness we found uniform films. Optical properties were recorded by spectrophotometry. Conspicuous near-infrar…
By comparing the C 1s photoemission intensities from a clean diamond (111) surface to those obtained from a fluorine-covered surface, we conclude that a single (111) layer of atoms participates in the diamond 2\ifmmode\times\else\texttimes\fi{}1 surface reconstruction. The data interpretation presented does not rely o…
We derive equations for the single particle distribution function and the k dependent structure factor for hard sphere fluids in the infinite dimension (d=∞) limit. Consistent with an earlier prediction that hard spheres will have mean field behavior in the d→∞ limit we find a Kirkwood instability which is interpreted…
Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II. Evaluation of various signal processing methods, J C Balland, J P Zielinger, M Tapiero, J G Gross, C Noguet
Abstract A new class of quinone derivatives, the dicyanodiimines 2 , 21 , and 23 , has been synthesized by the reaction of the corresponding quinones with bis(trimethylsilyl)carbondiimide ( 8 ) and titanium tetrachloride. A wide variety of substrates, even those which contain bulky groups and those which exhibit a str…
Optical emission spectroscopy was applied to study the rf glow discharge in hydrocarbons used for the deposition of amorphous hydrogenated carbon (a-C:H). The optical data in conjunction with mass spectrometric measurements show that the species found in the glow region are very specific for the hydrocarbon used (e.g.…
Absorption coefficients for some technologically important polymer materials are given in the wavelength range ∼240–170 nm. Absorption coefficients at 193 nm for these polymers show a wide range of values from ∼2×102 cm−1 for polytetrafluoroethylene (Teflon) to ∼4×105 cm−1 for polyimide. The general nature of the opti…
Molecular-dynamics simulations and in situ experimental observations of the melting and equilibrium structure of the crystalline Si(100)-melt interface are described. The equilibrium interface is structured, exhibiting facets established on (111) planes.
Light-scattering investigations in the temperature range from 10 to 850K have been performed on single crystals of silver niobate AgNbO 3 . The results are compared with structural and dielectric measurements revealing a complex sequence of phases. The Raman results and especially the strong central peak, which occurs…
Mixtures of poly(methyl methacrylate) and poly(α-methyl styrene) were prepared and their optical absorption coefficients at 193 nm were measured. A study of photoetching rate of these polymeric materials using an ArF excimer laser at 193 nm shows two regions of distinctly different etching characteristics. At relative…
The oxidation kinetics of HF-etched n- and p-doped silicon in air at room temperature have been studied by electron spectroscopy for chemical analysis. No great differences have been found between the n- and p-type oxidation kinetics at the low doping level of the studied samples. The rate of oxide growth on the HF-et…