B. S. Kwak、Phillip N. First、A. Erbil 等 7 位作者1992-10-15Journal of Applied Physics
The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO3) and strontium titanate (SrTiO3). Platinum thin films grown on KTaO3 (100) at a rate of 70 nm/h showed strong Rutherford backs…
Semiconductor materials and devicesElectronic and Structural Properties of OxidesSurface and Thin Film Phenomena
G. P. Johari、Andreas Hallbrucker、Erwin Mayer1992-10-15The Journal of Chemical Physics
The dielectric permittivity and loss tangent of hyperquenched glassy water (HGW) have been measured for fixed frequencies of 1 and 10 kHz from 80 K to its crystallization temperature and corresponding measurements have been made of the crystallized forms. The effect of thermal cycling has been investigated. Except for…
Liquid Crystal Research AdvancementsMaterial Dynamics and PropertiesGlass properties and applications
A. Ziya Akcasu、İvet Bahar、Burak Erman 等 5 位作者1992-10-15The Journal of Chemical Physics
Dissolution (mixing or melting) of inhomogeneities formed during spinodal decomposition in binary polymer mixtures is studied both experimentally and theoretically. The details of the dissolution experiment with time-resolved light scattering on polystyrene/poly(vinylmethylether) are presented. The theoretical approac…
Polymer crystallization and propertiesPhase Equilibria and ThermodynamicsMaterial Dynamics and Properties
S. Boultadakis、S. Logothetidis、S. Ves1992-10-15Journal of Applied Physics
Polycrystalline silicon (poly-Si) thin films prepared by recrystallization of α-Si either with annealing or ion implantation and annealing have been studied with the optical techniques of spectroscopic ellipsometry (SE) and Raman spectroscopy (RS), as well as with transmission electron microscopy (TEM). A detailed ana…
Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces
Noboru Nakano、Louis Marville、R. Reif1992-10-15Journal of Applied Physics
The Raman spectra of polycrystalline silicon doped with implanted boron were measured before and after thermal annealing. In addition to the peak of the silicon phonon mode at 521 cm−1, a shoulder at about 500 cm−1 was observed. For samples without annealing, this shoulder increased with the increase of the dopant dos…
Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence
Hidetoshi Fukuyama1992-10-15Journal of the Physical Society of Japan
It is indicated that the stability of average valence +4/3 of Cu, i.e. Cu +4/3 , in various (DCNQI) 2 Cu salts is the consequence of strong correlation at Cu sites. It is also discussed that the phase diagram separating metallic and insulating states together with the reentrance on the plane of pressure and temperatur…
Physics of Superconductivity and MagnetismMagnetism in coordination complexesOrganic and Molecular Conductors Research
K. Shimakawa、Sho Inami、Takumi Kato 等 4 位作者1992-10-15Physical review. B, Condensed matter
Prolonged exposure to band-gap light decreases the photoconductivity of annealed films of amorphous chalcogenides (${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$, ${\mathrm{As}}_{3}$${\mathrm{S}}_{7}$, AsS, ${\mathrm{As}}_{2}$${\mathrm{Se}}_{3}$, ${\mathrm{GeS}}_{2}$, ${\mathrm{GeSe}}_{2}$, and GeSe). This can be attributed to…
Chalcogenide Semiconductor Thin FilmsThin-Film Transistor TechnologiesPhase-change materials and chalcogenides
G. Dhanaraj、M. R. Srinivasan、H. L. Bhat 等 5 位作者1992-10-15Journal of Applied Physics
The thermal expansion, specific heat, dielectric constant, and resistivity of the novel organic nonlinear crystal, L-arginine phosphate monohydrate have been measured as a function of temperature. The thermal expansion is highly anisotropic and has been interpreted on the basis of crystal structure. The dielectric con…
Nonlinear Optical Materials ResearchAcoustic Wave Resonator TechnologiesSolid-state spectroscopy and crystallography
A M Casanovas、Jordi Casanovas、Florence Lagarde 等 4 位作者1992-10-15Journal of Applied Physics
SF6 samples (PSF6=100 or 200 kPa) were submitted to point-to-plane dc negative polarity corona discharges in the presence of water [concentration=2000 ppmv (parts per million by volume)] or without the addition of water. The stable gaseous byproducts formed, (SO2F2, SOF2, and S2F10) were assayed by gas-phase chromatog…
High voltage insulation and dielectric phenomenaVacuum and Plasma ArcsElectrostatic Discharge in Electronics
Catherine Jordan、J. Galy、Jean‐Pierre Pascault1992-10-15Journal of Applied Polymer Science
Abstract An investigation was carried out into the effect of the extent of reaction on the mechanical properties, in a mixture of an epoxy prepolymer and a cycloaliphatic diamine, above the gel point. First, the most adequate technique to approach the extent of reaction was chosen between differential scanning calorim…
Polymer crystallization and propertiesEpoxy Resin Curing ProcessesSynthesis and properties of polymers
S.T. Howard、M.B. Hursthouse、Christian W. Lehmann 等 5 位作者1992-10-15The Journal of Chemical Physics
The in-crystal molecular dipole moment of the nonlinear optical material 2-methyl-4-nitroaniline has been determined from a charge density analysis of x-ray diffraction data. The results indicate a considerable enhancement of the free molecule dipole moment, due to the crystal field. The analysis suggests that aspheri…
Crystallography and molecular interactionsNonlinear Optical Materials ResearchSolid-state spectroscopy and crystallography
David Holmes、John A. Chapman、Darwin J. Prockop 等 4 位作者1992-10-15Proceedings of the National Academy of Sciences
Collagen fibrils generated in vitro at 37 degrees C by enzymic removal of C-terminal propeptides from type I pC-collagen (an intermediate in the normal processing of type I procollagen to collagen containing the C-terminal propeptides but not the N-terminal propeptides) display shape polarity, with one tip fine tapere…
Skin Protection and AgingCollagen: Extraction and CharacterizationBone and Dental Protein Studies
W. Suttrop、Gerhard Pensl、W. J. Choyke 等 5 位作者1992-10-15Journal of Applied Physics
Hall effect and infrared absorption measurements of n-type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four series of absorption lines to electronic transitions of three donor spe…
Semiconductor Quantum Structures and DevicesSemiconductor materials and devicesDiamond and Carbon-based Materials Research
Colin A. Wolden、S. Mitra、Karen K. Gleason1992-10-15Journal of Applied Physics
Hot-filament chemical vapor deposition is a common method employed for diamond deposition. Due to the filament-substrate proximity, large temperature variations across the substrate is often possible. Variations in substrate temperature need to be minimized in order to deposit polycrystalline diamond films of uniform…
High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchAdvanced Fiber Laser Technologies
Satishchandra Ogale、P. G. Bilurkar、Nitant Mate 等 6 位作者1992-10-15Journal of Applied Physics
Stoichiometric films of cupric and cuprous oxide are deposited on Si, MgO, and Y-ZrO2 substrates by pulsed excimer laser ablation technique. It is found that the equilibrium phase diagram based considerations dictate the phase formation. The films are characterized by small-angle x-ray diffraction, infrared, and UV-vi…
ZnO doping and propertiesCopper-based nanomaterials and applicationsElectronic and Structural Properties of Oxides
A. Fujimori、Izumi Hase、Masao Nakamura 等 14 位作者1992-10-15Physical review. B, Condensed matter
The electronic structure of ${\mathrm{La}}_{\mathit{x}}$${\mathrm{Sr}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{TiO}}_{3}$ has been studied by photoemission and x-ray absorption spectroscopy. Electron doping through La substitution induces a new photoemission feature of Ti 3d character within the band gap of ${\…
Semiconductor materials and devicesMagnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides
M. Joffre、David Yaron、R. Silbey 等 4 位作者1992-10-15The Journal of Chemical Physics
We investigate the second-order nonlinear optical properties of octupolar molecules, as opposed to traditional charge transfer dipolar molecules. We consider in particular the case of hexasubstituted aromatic rings, trianiline, trinitrobenzene, and tri-amino-,tri-nitro-benzene (TATB).
Porphyrin and Phthalocyanine ChemistryNonlinear Optical Materials ResearchPhotochemistry and Electron Transfer Studies
Alan A. Marra1992-10-15Medical Entomology and Zoology
Bond formation fundamentals. Composition and characteristics of adhesives. Composition and characteristics of wood. Characteristics conferred in preparation of wood. Characteristics conferred in preparing adhesives. Wood geometry factors. Consolidation processes. Quality control. Bond performance: testing and evaluati…
Engineering Technology and MethodologiesMaterial Properties and Applications
A. Chainani、M.K. Mathew、D. D. Sarma1992-10-15OpenAlex
A study of the semiconductor-metal transition in the series ${\mathrm{La}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Sr}}_{\mathit{x}}$${\mathrm{CoO}}_{3}$, x=0.0--0.4, using electron-spectroscopy techniques is presented. The results show that the ground state of ${\mathrm{LaCoO}}_{3}$ has strongly mixed characte…
Magnetic and transport properties of perovskites and related materialsRare-earth and actinide compoundsElectronic and Structural Properties of Oxides
Chin-Yu Yeh、Zhiwei Lü、Sverre Froyen 等 4 位作者1992-10-15OpenAlex
The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the T=0 energy difference \ensuremath{\Delta}${\mathit{E}}_{\mathrm{W}\mathrm{\ensuremath{-}}\mathrm{ZB}}$ between W and ZB for all simple…
ZnO doping and propertiesGaN-based semiconductor devices and materialsSemiconductor materials and devices