Materials Literature
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We study the phase resonances in metallic compound gratings. The diffraction problem is solved by means of the modal method and the surface impedance boundary condition. The response of gratings made of various metals is analysed. Curves of specular efficiency, field amplitude and phase inside the grooves are shown an…
The magnetic order resulting from an indirect exchange between magnetic moments provided by the spin-polarized hole gas in the metallic phase of a ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ double layer structure is studied via Monte Carlo simulation. The exchange is calculated to the second order…
Adsorption of ${\mathrm{NH}}_{3}$ and ${\mathrm{BBr}}_{3}$ (and their decomposed fragments) onto B and N sites of $c\ensuremath{-}\mathrm{BN}(111)$ and $h\ensuremath{-}\mathrm{BN}(101\ifmmode\bar\else\textasciimacron\fi{}0),$ has been theoretically investigated using DFT calculations under periodic boundary conditions…
Abstract Fluorescence measurements on Er ions in Y 2 O 3 thin films have been analyzed with crystal‐field Hamiltonians of C 2 and C 3 i symmetries including J ‐mixing effects. Crystal‐field parameters have been determined based on the Racah theory, that minimize the rms deviation between calculated and experimentally…
Abstract The temperature dependence of thermal, morphological, and rheological properties of amphiphilic polyurethanes was examined with differential scanning calorimetry (DSC), wide‐angle X‐ray scattering (WAXS), small‐angle X‐ray scattering (SAXS), rheological measurements, and Fourier transform infrared spectroscop…
Pt/(Ba 0.7 Sr 0.3 ) TiO 3 ( BST)/YBa 2 Cu 3 O 7− x (YBCO ) capacitors on SrTiO3 substrates were fabricated. The temperature and field dependence of the leakage current of Pt/BST interface were studied in the temperature range from 100 K to 320 K and in an electric field up to 3 MV/cm. For a middle electric field (&…
Molecular chirality, and the chiral symmetry breaking of resulting macroscopic phases, can be topologically imprinted and manipulated by cross-linking and swelling of polymer networks. We present a new experimental approach to stereo-specific separation of chiral isomers by using a cholesteric elastomer in which a hel…
Mechanisms of cross relaxation (3H4, 3H6→3F4, 3F4) in Tm3+ -doped PbO−Bi2O3−Ga2O3−GeO2 glass were analyzed. The energy gap between the absorption (3H6→3F4) and emission (3H4→3F4) spectra was approximately 600 cm−1. A large decrease in cross relaxation rates at low temperatures indicated that cross relaxation is contro…
Mechanical properties, such as flexural strength, fracture toughness and ductility, and superconducting properties, T c , J c and H irr , are crucial for industrial applications of high- T c oxide superconductors. However, oxide superconductors have the intrinsic brittleness of the perovskite structure, thus the stren…
Electroless deposited Co-based alloys have been proposed as diffusion barriers for ultralarge-scale integrated microelectronic devices. In this study, Cu grain boundary diffusion in electroless deposited Co0.9W0.02P0.08 and Co0.9P0.1 in the temperature range between 300 and 450 °C was quantitatively studied and compar…
The dielectric permittivity, dielectric quality factor (inverse dielectric loss), and lattice parameter of 140 nm sputtered SrTiO3 films were dependent on the oxygen partial pressure and total chamber pressure (O2+Ar) during film growth. Films were grown at 25 and 75 mTorr (mT) in an oxygen rich and oxygen deficient s…
We present a pseudopotential calculation of the single particle and excitonic spectrum of CdSe nanocrystals. We find that in the excitonic manifold derived from the ground state electron and the first 60 hole states there are two energy gaps much larger than the typical LO phonon energy in bulk CdSe. Such gaps can eff…
It is demonstrated that the compressive residual stress in turbostratic boron nitride (tBN) film is caused by the incorporation of Ar atoms between the gap of tBN layers. The stress of the film is measured in situ during sputter deposition at various substrate bias voltages. The variation of the stress with increasing…
Near-threshold irradiation of B-doped synthetic diamonds has been performed using a transmission electron microscope operated at 200 kV. Both chemical vapor deposited and high-pressure high-temperature synthesized samples have been studied. The B levels were in the range 1017–1019 cm−3. After irradiation the samples w…
The CrVO(4)-type magnetic oxides MM'O(4) consist of edge-sharing MO(4) octahedral chains condensed with M'O(4) tetrahedra and exhibit a wide variety of magnetic structures. The magnetic properties of these oxides were examined by studying their spin exchange interactions on the basis of spin dimer analysis. The nature…
PbTiO 3 (PT) thin films were prepared on ZrO 2 , SrTiO 3 , thermally oxidized silicon, and fused silica substrates by a simple sol–gel technique. The crystallization and optical properties of the thin films were investigated. The PT films on ZrO 2 and SrTiO 3 substrates have a c -axis preferential orientation, whereas…
Permissible symmetries of multi-domain structures are analyzed in the m3̄m→3m, m3̄m→4mm and m3̄m→mm2 ferroelectric species. Domain structures produced by the application of external electric and/or mechanical fields that allow for the formation of two-dimensional domain superlattice are described in terms of effective…
We present results of Monte Carlo simulation studies utilizing the bond fluctuation model in conjunction with single and configurational biased Monte Carlo moves to investigate the adsorption of diblock (A–b–B) and alternating (A–alt–B) copolymers at physically flat surfaces made of an equal number of two chemically d…
Abstract Technological advances in the field of microelectronic fabrication techniques have triggered a great interest in vacuum microelectronics. In contrast to solid‐state microelectronics, which entails scattering‐dominated electron transport in semiconducting solids, vacuum microelectronics relies on the scatterin…
Atomic resolution images of multiwalled boron nitride nanotubes have been obtained using scanning tunneling microscopy operating at tunneling currents below 20 pA and biases of approximately −2.5 V. Lattice images acquired with negative sample biases exhibit trigonal symmetry that is interpreted as resulting from nitr…