Materials Literature
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We investigate the effects of Ga deposition rate (R) and antimony flux (P) on the morphology of GaSb quantum dots (QDs). GaSb QDs are formed on GaAs at 420 °C by Stranski-Krastanov (SK) mode under various conditions of R (0.13 ~ 0.73 monolayer (ML)/s) and P (1.0 ~ 4.2 × 10-7Torr). An atomic microscope study shows that…
Diffuse intrinsic pontine glioma is a lethal childhood brain cancer. Recent efforts to obtain postmortem autopsy and fresh biopsy tumor tissue specimens have resulted in the generation of robust molecular models of the disease in vitro and in vivo. These valuable resources have led to identification of molecular aberr…
Discharge in Long Air Gaps: Modelling and applications presents self-consistent predictive dynamic models of positive and negative discharges in long air gaps. Equivalent models are also derived to predict lightning parameters based on the similarities between long air gap discharges and lightning flashes. Macroscopic…
Corundum-structured α-Ga2O3is a prospective material for power devices because it has expectable large bandgap and high breakdown field. We have shown the fabrication of α-Ga2O3thin films on sapphire substrates, but many dislocations were confirmed in the α-Ga2O3thin films. In this presentation, we report the growth o…
Summary form only given. We present advances in the performance and characterization of semipolar (202̅1̅) III-nitride laser diodes. These include a high yield facet formation process giving highly vertical and smooth facets (2and threshold voltages as low as 5.5 V for continuous wave laser diodes. Also, we present th…
Fast reactors with lead coolant have several advantages over analogues. Performance can be further improved by replacement of natural composition lead with radiogenic one. Thus, two main issues need to be addressed: induced radioactivity in coolant and efficient neutron multiplication factor in the core will be change…
CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we…
info:eu-repo/semantics/published
This review work is dedicated to the 70th anniversary of the G.V. Kurdyumov Institute for Metal Physics of National Academy of Sciences of Ukraine (1945–2015). The review reports on the results of investigations of dynamic characteristics of the surface of ferromagnetic single-crystal Fe–Ni and Co–Ni alloys obtained i…
Summary form only given. We demonstrate the single-operation growth for diameter-tuned and site-defined nanowires by combining in-situ diameter-tuned technique with our self-assembly site-defined process. By using the self-catalyzed vapor-liquid-solid approach, the indium particle size and the nanowire diameter can be…
Development of solution based small-molecular organic thin film deposition technique is important for further prevalence and expansion of the combinatorial variety of materials for organic devices. The electrospray deposition (ESD) is a candidate of the wet deposition technique of organic materials. In this study, we…
Ispitivanjem svojstava odljevaka od nodularnoga lijeva otkriveno je da dodatak cerija i bizmuta u tocno određenom omjeru može povoljno utjecati na sferoidalnu morfologiju grafita i mehanicka svojstva, posebno kod debelostijenih odljevaka. U uvodnom dijelu rada, dan je kratak opis osnovnih svojstava nodularnog lijeva,…
Summary form only given. ZnO and indium-doped ZnO structures were prepared by hydrothermal method deposited for different time duration. Scanning electron microscopy (SEM) measurements show that flower-like crystals form during the synthesis. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS) measu…
We investigate material conversion of compound semiconductor GaAs nanowires to extend their functions. By heating the GaAs nanowires in Indium melt, the In was introduced into the GaAs nanowire, converting the nanowires to be InGaAs compounds. The further heating treatment in N2ambient oxidize the nanowire simultaneou…
Summary form only given. Strain engineering is a promising method for controlling electron transport in graphene. From our previous experimental result, we found that the observation of gap formation by lattice strain requires large spatial variation of strain and long mean free path of charge carriers. For satisfying…
Synthesis and Structural Characterizations of Na1-xKxNb0.95Sb0.05O3 S. Sasikumar, R. Saravanan Solid solutions of lead free ceramics of Na1-xKxNb0.95Sb0.05O3 (x=0.01, 0.03 and 0.05) were prepared by the conventional solid state reaction method. The formation of perovskite structure of the prepared ceramics was confirm…
Hexagonal boron nitride (h-BN), an insulating layered material with a wide band gap, is widely utilized as the substrate and gate insulator to achieve high carrier mobility in layered channel materials, especially graphene. However little study has been conducted on the statistical analysis of the breakdown voltages a…
We investigated microstructures and transport properties of Nb-doped anatase TiO2(TNO) films deposited by two methods: sputtering and pulsed laser deposition (PLD).We found that working pressure (Pw) of sputtering has a significant influence on both microstructures and transport properties. Cross-sectional observation…
We report a novel thin-film flip-chip (TF-FC) c-plane GaN LED design grown on bulk GaN. By way of a photoelectrochemical (PEC) undercut etch, LEDs are transferred from a bulk GaN substrate to a sapphire submount. As a first demonstration, the resulting LEDs have threshold voltages below 3V and a peak external quantum…
Concerns around global warming have led to a nuclear renaissance in many countries, meanwhile the nuclear industry is warning already of a need to train more nuclear engineers and scientists, who are needed in a range of areas from healthcare and radiation detection to space exploration and advanced materials as well…