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Accurate cogging and linear ripple models for parametrized Feed Forward

T.L. van Vuure、Marijke Kuiper2016-06-01OpenAlex

In Iron Core Motors, there are two types of ripple - i.e. position dependent, current dependent parasitic forces. One is only marginally dependent on current (the detent force) and the other is linear with current. Clearly, for formulating accurate detent force models for the purpose of successfully utilizing parametr…

Electric Motor Design and AnalysisMagnetic Properties and ApplicationsMagnetic Bearings and Levitation Dynamics

Origin of unintentional gallium incorporation into AlN layers grown by metalorganic vapor phase epitaxy

Atsushi Yamada、Tetsuro Ishiguro、Junji Kotani 等 5 位作者2016-06-01OpenAlex

This paper presents the origin of gallium (Ga) incorporation into AlN layers grown by metalorganic vapor phase epitaxy (MOVPE). We systematically investigated Ga incorporation from GaN deposits on the inner walls of a growth reactor and an underlying GaN layer. The Ga incorporation is not affected by the GaN deposits…

GaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials

Magnetoresistance effect of Ga-Sn-O thin-film device

Asuka Fukawa、Kota Imanishi、Shogo Miyamura 等 5 位作者2016-06-01OpenAlex

We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random p…

Semiconductor materials and devicesThin-Film Transistor TechnologiesGa2O3 and related materials

Analysis of the SOG film crack mechanism for TEOS/SOG/TEOS structure

Takuya Naoe、Takaaki Fujimoto、Masanori Miyata 等 4 位作者2016-06-01OpenAlex

In the multilevel interconnection process using the TEOS / SOG/ TEOS films planarization technology, the low refractive index TEOS film and the upper the Metal line layout have much affect the internal SOG film crack. Existence of the large area upper Metal line is indispensable for the occurrence of the SOG film crac…

Advanced Surface Polishing TechniquesCopper Interconnects and ReliabilityOptical Coatings and Gratings

에폭시/마이크로/나노알루미나 콤포지트의 부분방전 저항성특성

박재준2016-06-01OpenAlex

Neat Epoxy, nano alumina composites, micro alumina composites and multi-nano alumina composites were prepared and experiment were performed to measure their partial discharge resistant characteristics. The partial discharge resistance obtained for the microcomposites, nanocomposites and multi-nanocomposites are compar…

Synthesis and properties of polymers

Structure Dependent Room Temperature Ferromagnetism In Co, Nb Co-doped BaTiO3 Thin Films Prepared By RF Sputtering

R. Siddheswaran、Petr Nov2016-06-01Advanced Materials Letters

Thin films of BaTiO3 and Co, Nb co-doped BaTiO3 on glass and Si (100) substrates were deposited by RF sputtering (at 350 ºC), and annealed. The amorphous and crystalline phases were observed for the as-deposited and annealed samples, respectively from the X-ray diffraction (XRD) studies. The magnetic behaviour of the…

Magnetic and transport properties of perovskites and related materialsMultiferroics and related materialsTransition Metal Oxide Nanomaterials

Evaluation of the properties of 2,4,6-tri-tert-butylphenol, a vulcanization inhibitor for butyl rubber-based composite material

E. Kh. Afiatullov、G.S. Markova、Н. В. Наумова 等 5 位作者2016-06-01Russian Journal of General Chemistry

Comparative evaluation of the physicochemical properties of samples of antioxidant 2,4,6-tri- tert -butylphenol, produced by different plants and used as a vulcanization inhibitor for butyl rubber-based composite material, has been carried out. An IR-spectroscopic examination of the antioxidant and its aqueous extract…

Thermal and Kinetic AnalysisFree Radicals and Antioxidants

전해질에 형광체를 첨가한 염료감응형 태양전지의 물성

노윤영、최민경、김광배 等 4 位作者2016-06-01대한금속재료학회지

We added 0.0~0.5 wt% YBO3:Eu3+ nano powders to an electrolyte to improve the energy conversion efficiency (ECE) of a dye-sensitized solar cell (DSSC). TEM and XRD were used to characterize the microstructure and phases. Photoluminescence(PL) was used to determine fluorescence and the composition of the YBO3:Eu3+ Phosp…

TiO2 Photocatalysis and Solar CellsChemical and Physical Properties of MaterialsPigment Synthesis and Properties

Inter Bond Experimental Electron Density in Magnesium Ferrite Ceramic (MgFe2O4) Through XRD

M.J. Viswanath、M. Aysha kani、S.V. Meenakshi 等 4 位作者2016-06-01Materials research foundations

Inter Bond Experimental Electron Density in Magnesium Ferrite Ceramic (MgFe2O4) Through XRD M.J. Viswanath, M. Aysha kani, S.V. Meenakshi, R. Saravanan The magnesium ferrite (MgFe2O4) sample is prepared with the solid state reaction method. It was characterized by Powder-XRD, UV-visible and SEM. The average crystallit…

Magnetic Properties and Synthesis of FerritesElectron and X-Ray Spectroscopy TechniquesX-ray Diffraction in Crystallography

Characteristic evaluation of Ga-Sn-O thin film by Hall measurement

Kota Imanishi、Asuka Fukawa、Tokiyoshi Matsuda 等 4 位作者2016-06-01OpenAlex

We are researching Ga-Sn-O (GTO) thin film as a potential material for future semiconductor devices. In this study, we investigate the GTO thin film using Hall measurement. A GTO film is deposited using RF magnetron sputtering, and annealed using electric-furnace annealing in air at temperature of 350 °C. We utilize v…

Thin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsGa2O3 and related materials

Emission wavelength variation of InAs quantum dots grown on GaAs using As2 molecules in molecular beam epitaxy

Yuma Hayashi、Nobuhiko Ozaki、Shunsuke Ohkouchi 等 7 位作者2016-06-01OpenAlex

InAs quantum dots (QDs) were grown on GaAs by molecular beam epitaxy using As2molecules (As2-QDs) and were structurally and optically characterized. Photoluminescence (PL) measurements revealed unique optical properties of the As2-QDs, which differ from InAs QDs grown with As4(As4-QDs). As2-QDs exhibited PL emission c…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesAdvanced Semiconductor Detectors and Materials

자동차 자동변속기 기어용 합금강의 열간 단조 성형에 따른 기계적 특성 변화에 관한 연구

김화정、김용조、김현수2016-06-01OpenAlex

This study investigated the effect of the changes in metal characteristics due to the hot forging on SCR420HB applied to ensure the optimal production of the hot-forging ratio on the mechanical properties of an automotive automatic transmission gear. The microstructural changes in the forging ratio were investigated b…

Metallurgy and Material FormingMetal Alloys Wear and PropertiesEngineering Applied Research

Evaluation of Ga-Sn-O films fabricated using mist chemical vapor deposition

Hiroki Fukushima、Masahiro Yuge、Tokiyoshi Matsuda 等 4 位作者2016-06-01OpenAlex

We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resist…

ZnO doping and propertiesSemiconductor materials and devicesThin-Film Transistor Technologies

Application of the model to evaluate the induced effects on overhead lines due to a nearby positive lightning downward leader

Abderrahmane Béroual、I. Fofana2016-06-01OpenAlex

Discharge in Long Air Gaps: Modelling and applications presents self-consistent predictive dynamic models of positive and negative discharges in long air gaps. Equivalent models are also derived to predict lightning parameters based on the similarities between long air gap discharges and lightning flashes. Macroscopic…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaThermal Analysis in Power Transmission

Eu concentration dependence of Eu doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy

Tomohiko Imanishi、Hiroto Sekiguchi、Satoshi Nishikawa 等 8 位作者2016-06-01OpenAlex

Eu doped GaN (GaN:Eu) shows a sharp line emission and thermal stability of the emission wavelength. To improve the optical properties, GaN:Eu nanocolumns were grown on GaN nanocolumn platform with high crystalline quality by rf-plasma-assisted molecular beam epitaxy. Although it was revealed that an increase of Eu con…

ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials

Negative lightning model—applications

Abderrahmane Béroual、I. Fofana2016-06-01OpenAlex

Discharge in Long Air Gaps: Modelling and applications presents self-consistent predictive dynamic models of positive and negative discharges in long air gaps. Equivalent models are also derived to predict lightning parameters based on the similarities between long air gap discharges and lightning flashes. Macroscopic…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaAerosol Filtration and Electrostatic Precipitation

On the ESD self-protection capability of integrated UHV resistor

Hyunchul Nah、Joo‐Hyung Kim、Chang-Eun Lee 等 7 位作者2016-06-01OpenAlex

ESD characteristics of the UHV resistors (UHVRs) has been studied. The UHVR under study suffers from a low ESD level. The failure analysis has been done with the aid of TLP measurements and simple equivalent circuit simulations. From the analysis, a transient large voltage difference on the field oxide due to the RC d…

Silicon Carbide Semiconductor TechnologiesHigh voltage insulation and dielectric phenomenaElectrostatic Discharge in Electronics

Studying dispersions of ferroelectric nanopowders in dioctyl phthalate as dielectric media for capacitive electronic components

А. В. Гороховский、Nikolay Gorshkov、Igor Burmistrov 等 8 位作者2016-06-01Technical Physics Letters

The electrical properties of dispersions of a powdered ferroelectric nanocomposite based on ilmenite (FeTiO 3 ) and hollandite (K 1.46 Ti 7.2 Fe 0.8 O 16 ) in dioctyl phthalate have been studied by impedance spectroscopy techniques in a frequency range of 10 –1 –10 6 Hz. The influence of stabilizing additives of catio…

Advanced Sensor and Energy Harvesting MaterialsConducting polymers and applicationsElectrowetting and Microfluidic Technologies

MBE deep-UV LEDs on bulk AlN substrates

Sm Moudud Islam、Vladimir Protasenko、Huili Grace Xing 等 4 位作者2016-06-01OpenAlex

Summary form only given. Using MBE to grow extreme quantum confined heterostructures of 1-2 monolayers GaN/AlN as the active region on bulk AlN substrates, a DUV LED with room temperature electroluminescence at 250 nm MBE grown deep UV LED is demonstrated. LEDs on high quality bulk AlN substrates show significantly lo…

GaN-based semiconductor devices and materialsPlasma Diagnostics and ApplicationsGa2O3 and related materials

A generalized time domain pulse width modulation spectrum calculation method

Ivan Mrčela、Damir Sumina、Viktor Šunde2016-06-01OpenAlex

Pulse width modulation is a widely used technique for both DC to DC and DC to AC voltage conversion, with most modern-day DC and AC drives control systems exploiting this method. This paper presents a simple and versatile time domain method to determine the spectrum of a pulse width modulated converter output voltage…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaElectromagnetic Compatibility and Noise Suppression