Materials Literature
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Direct deposition of pinhole-free oxide thin films by atomic layer deposition (ALD) have proven to be an efficacious route to passivation layers and diffusion barriers in many applications. However, perovskite halides absorbers are largely incompatible with the process conditions for conventional atomic layer depositi…
CZTSe solar cells with different elemental ratios are compared for their photo-response with low and high illumination densities. Elemental ratios are found not only affecting the defect density, but also Mo/CZTSe/CdS band alignment. Higher Sn/Cu and lower Zn ratio was found more immune to EQE droop at high power illu…
Tin (II) monosulfide (SnS) is a promising Earthabundant, non-toxic thin-film absorber due to its near-ideal optoelectronic properties and manufacturability, but low minority-carrier lifetimes limit SnS device efficiencies to below 5%. We employ electron beam-induced current measurements to deduce the effect of structu…
In the present work, the performance of a simplified model of a hot carrier cell is examined at different energy levels of carrier collection. Incident photons, Monte Carlo generated by employing the ASTM G173-03 data set, are accounted for individually as they interact with the cell. It is assumed that the carriers c…
Many thin-film photovoltaic materials show promising optical properties, but are limited by low minority-carrier lifetimes. Many factors can lower the carrier lifetime, including structural defects, intrinsic point defects, and extrinsic point defects from impurities. We focus on the case of tin (II) sulfide (SnS), in…
The dielectric functions of CuIn1-xGaxSe2(CIGS) alloys as deduced by spectroscopic ellipsometry (SE) have been parameterized versus CIGS bandgap Egand versus x. As a result, Egcan serve as a free parameter in regression analyses of SE data acquired on multilayer structures incorporating CIGS. This enables the determin…
In this paper we present an dual band ultra-thin and polarization-insensitive metamaterial absorber (MA) for submillimeter wave band. The presented structure composed of symmetric ring resonator with gaps and closed-ring resonator is printed on 50um thick kapton film backed by a metal ground. The simulation results sh…
We present scanning microwave impedance microscopy as an analysis technique that can be used to map the relative carrier concentrations at the nanoscale in the semiconductors used for device applications. The specific application presented here is the analysis of PV-device grade CdTe, grown using rf-sputtering and clo…
Post-deposition soft annealing (PDA) process for kesterites, either at low (250 °C) temperatures, on finished devices is known to improve the characteristics of chalcogenide thin film solar cells. Here we report the effect of PDA process for Cu2ZnSnSe4based solar cells, showing that with the increasing PDA temperature…
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O, S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD…
Au/Cu2O/n-type Si structures have been fabricated and characterized electrically. The structure yields a current rectification of almost 7 orders of magnitude. It is also shown that the structure performs as a metal/semiconductor junction when subjected to CV measurements. The Cu2O film, deposited by radio frequency m…
We present a proof-of-concept solid state solar cell with an efficiency of 1.0 % using solution-processed BÍI3 absorber layer. Spin-coated BiI3 thin films show stability in air for over one month. The films were integrated into an all-inorganic photovoltaic device with a transition-metal oxide hole transport layer. Th…
This paper investigates the effect of using different selenization sources, namely elemental Se and H2Se, on Cu(In1-xGax)(SeyS1-y)2devices derived from depositions of nanoparticle inks. Nanoparticles used in this synthesis are chalcogenides (e.g. CuInGaS). The effect of the selenization species has a large effect on t…
Semiconductor nanoparticles, supporting electric and magnetic optical resonances, are promising basic elements for a number of linear and nonlinear optical applications. Here we study elastic and inelastic (Raman) light scattering on crystalline silicon nanoparticles and reveal their interrelations for both s- and p-p…
We located the electrical junction (EJ) of Cu(In, Ga)Se2(CIGS) and Cu2ZnSnSe4(CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We f…
The VOCis a key parameter to determine the performance of a solar cell. In polycrystalline materials, it is imperative to find the origin of the modest VOCthat currently limits most PV technologies. For that, we implement a variant of Kelvin probe force microscopy to image and quantify local variations in the VOCof a…
A new class of passivation material, ternary AlxMg1-xOyis developed and its surface passivation and interface properties on silicon surfaces are investigated in this study. Super-cycle plasma-enhanced atomic layer deposition is employed to fabricate AlxMg1-xOythin films and can effectively engineer physical properties…
Using a multi-wavelength expansion of the Gerchberg-Saxton algorithm, a surface relief diffractive optical element (DOE) is designed, fabricated, and measured. Spectrum splitting capability of the designed DOE is 76.29% of an ideal rectangular spectral filter under plane wave illumination. The DOE is fabricated using…
Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix. pm-Si:H solar cells demonstrate interesting initial degradation behaviors such as rapid initial change in photovoltaic parameters and large macroscopic structural change duri…
Recently, Metal-Insulator Transitions (MIT) were reported in Nanoparticle (NP) films. We developed a Kinetic Monte Carlo transport model to simulate the MIT. Electrons transfer between neighboring NPs with activated hopping if the NP energies differ by more than an overlap energy, but transfer by a non-activated quant…