Materials Literature
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Cu2SnS3is an attractive material for photovoltaic applications due to its inherent properties, and because is formed only by earth abundant elements. In this work we present the preparation of Cu2SnS3layers by a sequential process based in the DC-sputtering of metallic precursors followed by a reactive annealing. We a…
In this work, we first use momentum density studies to understand strongly correlated electron behavior, which is typically seen in transition metal oxides. We observe that correlated electron behavior as seen in bulk NiO is due to the Fermi break located in the middle of overlapping spectral functions obtained from a…
In this paper, experimental realization of the surface plasmon laser in a solution for the visible and near infrared region (VNIR) based on the hybrid nanoparticles with a 13-nanometre gold core or the nanorod with various aspect ratios surrounded by a 20-40 nm thick dye-embedded silica shell (fluorescein or DCM) was…
Atomic layer deposition (ALD) windows for ZnO and ZnS films using DEZn, H2S and H2O as precursors were determined and the deposited films were characterized. Doping of ZnO with In during ALD by periodic exposure to TMIn was studied with an emphasis on the structural properties of the films. XRD results show compressiv…
In this study we developed semitransparent perovskite solar cell (PSC) with colors from reddish orange, orange, yellow, yellow green, and bluish green, arising from optical interference in the microcavity systems, dependent on the thickness of their indium tin oxide (ITO) optical spacers. After embedding precisely con…
The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring during the growth when Ag2Te and Ga2Te3source mixture was used to form AgGaTe2. It was…
We report on the improvement of Cu(In, Ga)Se2(CIGS) photovoltaic performance by inserting Cu-poor compounds Cu(In, Ga)3Se5at CIGS/CdS interface. It was experimentally found that formation of the Cu(In, Ga)3Se5layer at the CdS/CIGS interface was quite important to boost the photovoltaic performance. Cd diffusion was pr…
Close spaced sublimation (CSS) has attractive features for high-rate deposition of CdS/CdTe thin film solar modules. It is necessary to have a solid growth model to explain their growth. In past 20 years, there are several growth models which are conflict each other. In this paper, a growth model was developed for CdT…
In this work, we demonstrate the the enhancement of two type hybrid QD dual-junction solar cell. The green QD520 sample, shows better performance than blue QD450 sample in current density and power conversion efficiency. The enhancement of short-circuit current and power conversion efficiency for green QD450 sample ar…
The saturation of VOc at larger band gaps in Cu(In, Ga)Se2devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface…
In this paper, a novel dual composite right-/left-handed (Dual-CRLH) unit is proposed. Based on the analysis of constitutive parameters, there is a different sign between the effective permittivity and permeability in a specific frequency range, thus a stop-band is produced. Besides, both passbands at lower and higher…
This paper introduces a circularly polarized omni-directional antenna, which is composed of a monopole antenna and 6 patches of metamaterial polarizers. Each metamaterial polarizer includes three closely spaced metallic wires printed on a dielectric substrate. The metamaterial polarizer is used to transform the antenn…
This article investigates the effects of sheet resistance on a selective emitter (SE) solar cell fabricated using a simple laser doping process (LD). In order to demonstrate the influence of lightly doped emitter we divided cells for three groups for POCl3 diffusion with sheet resistance of 100 Ω/sq (SE-1), 120 Ω/sq (…
We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band s…
Difficulties with p-type doping in CdTe based photovoltaics prompted the growth of epitaxial As-doped CdTe to fundamentally understand dopant incorporation limits and activation. At high levels of As, HgCdTe and CdTe have shown drastic decreases in electrical activity, but the mechanism has been unknown. Atom probe to…
The paper presents an illustrative application of the matrix homogenization method to estimate the effective parameters of layered structures. The model effectiveness is demonstrated for the Maxwell equations by means of the comparison of the analytical solution and simulated data. For this purpose, CST Microwave Stud…
The effects of alkali doping (Na, Li, K) on the carrier transport in Cu2ZnSn(S, Se)4(CZTSSe) thin films have been studied systematically using time-resolved THz spectroscopy. Na and Li doping seem to have no influence on the carrier mobility, whereas K doping leads to a noticeable decrease. In addition, we found that…
State-of-the-art triple junction inverse metamorphic solar cells have been known to have bottom InGaAs junction that are limiting to the overall radiation performance. It has been proposed that the addition of quantum dots to the bottom junction would improve radiation tolerance of the bottom cell, and thus enhance th…
This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data…
Silicon wafers sliced with diamond wire saw and SiC slurry are compared in this study. Diamond wire saw have high slicing speed and the cost is lower than slurry cut process. However it is not suitable for multi-crystalline wafer slicing process. In this study, a surface treatment process was used on the diamond wire…