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4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Neophytos Lophitis、Marina Antoniou、Florin Udrea 等 7 位作者2016-06-01OpenAlex

The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in t…

Physics of Superconductivity and MagnetismSilicon Carbide Semiconductor TechnologiesMagnetic Properties and Applications

A new method to analyse eddy current loss in an integrated magnetic structure for boost converter

Ali Hussein Al-Omari、Stuart MacVeigh、Mohammed Zaki Ahmed 等 6 位作者2016-06-01OpenAlex

This paper proposes a new integrated structure for the interleaved boost converter. The structure includes the main windings and the multipliers on the same core. Where the single core boost topology would provide a minimum iron losses. A new method to calculate the eddy current loss for the used core is presented. Th…

Electric Motor Design and AnalysisMagnetic Properties and ApplicationsInduction Heating and Inverter Technology

An imitation model of a power-supply system of oxygen-converter manufacturing to analyze switching overvoltage

A. N. Shpiganovich、Konstantin Pushnitsa2016-06-01Russian Electrical Engineering

This paper considers switching overvoltage that occurs in the power-supply system of oxygen-converter manufacturing when a circuit vacuum breaker is triggered. The particular features of such systems are analyzed, and a typical power supply scheme is considered. It is noted that overvoltage manifesting a highfrequency…

Magnetic Properties and ApplicationsElectric Power Systems and ControlPower Systems and Renewable Energy

Predictions of the Ejected Water Mass from Shallow Depth Explosion Plumes

William G. Szymczak、Raymond M. Gamache2016-06-01International Journal of Nonlinear Sciences and Numerical Simulation

Abstract A study is presented showing results of predictions of the amount of water ejected from shallow depth explosions. Measurements of the Equivalent Water Length (EWL) are determined by integrating the density along a horizontal line through the plume. These EWL values are important for the assessment of the viab…

Energetic Materials and CombustionCombustion and Detonation ProcessesUltrasound and Cavitation Phenomena

Low resistance Cu3Ge compounds formation by the low temperature treatment of Cu/Ge system in atomic hydrogen

A. I. Kazimirov、E. V. Erofeev、�. I. Fedin 等 5 位作者2016-06-01IOP Conference Series Materials Science and Engineering

The research deals with the regularities for Cu 3 Ge compound formation under the low temperature treatment of a double-layer Cu/Ge system deposited on i-GaAs substrate in atomic hydrogen flow. The treatment of a Cu/Ge/ i -GaAs system with layer thicknesses, respectively, of 122 and 78 nm, in atomic hydrogen with a fl…

Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesSemiconductor materials and interfaces

Basic Physics of Long-Term Strength of Solid Solutions with Various Kinetics of Mobile Defects

В. Г. Ткаченко2016-06-01Progress in Physics of Metals

A new dynamical model of time-dependent dislocation microyielding has been proposed using the propounded structure-energy-concept of long-continued strength in terms of dragging mechanisms responsible for microyield resistance increase in solid solutions below macroscopic yield stress. A physical theory of long-term,…

Microstructure and mechanical propertiesHigh-Velocity Impact and Material BehaviorMaterial Properties and Failure Mechanisms

Electronic properties of chalcogenide semiconductor nanostructures and thin-films

Oded Millo2016-06-01OpenAlex

I will review our combined local-probe and transport measurements on three types of semiconductor chalcogenide systems. Starting with Cu2S nanocrystals, I will present a new method for achieving p-type doping, by which Cu vacancies are formed upon annealing at moderate temperatures, yielding free holes. Consequently,…

Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsSemiconductor materials and interfaces

Evaluation of the adsorption capacity of nano-graphene and nano-graphene oxide for xylene removal from air and their comparison with the standard adsorbent of activated carbon to introduce the optimized one

Akram Tabrizi、Farideh Golbabaei、Hamid Shirkhanloo 等 6 位作者2016-06-01DOAJ (DOAJ: Directory of Open Access Journals)

Introduction: Volatile organic compounds from industrial activities are one of the most important pollutants released into the air and have adverse effects on human and environment. Therefore, they should be removed before releasing into atmosphere. The aim of the study was to evaluate xylene removal from air by nano-…

Graphene research and applicationsMembrane Separation TechnologiesMembrane Separation and Gas Transport

Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes

Abdelrahman Zkria、Tsuyoshi Yoshitake2016-06-01OpenAlex

PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The heterojunction devices showed typical rect…

Semiconductor materials and devicesDiamond and Carbon-based Materials ResearchIntegrated Circuits and Semiconductor Failure Analysis

Mass Attenuation Coefficient of Soil Samples in Kurdistan Region of Iraq by Using Gamma Energy at 0.662 MeV

Hemn Salh、Diyaree Kakil、Hawbash H. Karim 等 5 位作者2016-06-01Advances in Energy and Power

Mass attenuation coefficient of various soil samples (density ranges between 2.22 and 2.3gcm-3) collected from three sites distributed in Kurdistan Region of Iraq land have been determined for gamma energy 0.662MeV using gamma spectrometry. The average mass attenuation coefficients for the studied samples were found t…

Radioactivity and Radon MeasurementsRadiation Shielding Materials AnalysisAdvanced X-ray and CT Imaging

ALD-based 3D-capacitors for harsh environments

Dorothee Dietz、Yusuf Celik、Andreas Goehlich 等 4 位作者2016-06-01OpenAlex

Passive components like capacitors for harsh environments become more and more important, e. g. in the field of deep drilling, aerospace or in the automotive industry. They have to withstand temperatures up to 300 °C with a good performance concerning leakage current, breakdown voltage and capacitance density. The who…

Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices

Enhanced spin polarization at n-MnSb(0001)/InP(111) interface

Collins E. Ouserigha、Haiyuan Wang、Christopher W. Burrows 等 4 位作者2016-06-01OpenAlex

We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0…

ZnO doping and propertiesQuantum and electron transport phenomenaHeusler alloys: electronic and magnetic properties

Analysis and comparison of algebraic approaches for highly saturated Surface PMSM

Damián Caballero、Ibon Elósegui、M. Martinez-Iturralde2016-06-01OpenAlex

In the present work, two algebraic approaches to calculate magnetic flux linkage of Surface Permanent Magnets Synchronous Machines, (SPMSM), are described. The first one is based on a developed magnetic circuit for load condition, and the second one consists on a magnetic permeance network. Although both approaches's…

Electric Motor Design and AnalysisSensorless Control of Electric MotorsMagnetic Properties and Applications

MOVPE growth of N-polar GaN/AlxGa1−xN/GaN heterostructure on small off-cut substrate for flat interface

Kiattiwut Prasertsuk、Shuji Tanaka、Tomoyuki Tanikawa 等 12 位作者2016-06-01OpenAlex

The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8° toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from…

ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials

Time domain measurements in electrical insulation diagnostic tests

Vladimír Ďurman、Michal Váry、Jaroslav Lelák2016-06-01OpenAlex

In this paper a review is given of computing procedures for evaluation of the absorption current and recovery voltage measurements in dielectric systems. The method based on the recovery voltage measurement is treated in details and compared with some selected methods used in this field. All computing procedures were…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaPower Transformer Diagnostics and Insulation

Construction of frequency regulation RESS based on advanced cell grouping combined with the DWT

Chun-Gu Lee、Joung‐Hu Park、Jonghoon Kim2016-06-01OpenAlex

This approach newly gives insight to the design and implementation of an advanced lithium nickel cobalt aluminum oxide (LiNoCoAlO2 or NCA) cell grouping combined with the discrete wavelet transform (DWT) for frequency regulation renewable energy storage system (RESS) in grid-connected application. For an advanced NCA…

Advanced DC-DC ConvertersHigh voltage insulation and dielectric phenomenaAdvanced Battery Technologies Research

A study of mobile phone SAR levels modification in different experimental configurations under 2G and 3G communication standards

George Mihai、Angel Marian Aron、Valentin Haralambie 等 4 位作者2016-06-01OpenAlex

Experimental checking of the specific absorption rate (SAR) level modifications when using conductive textiles attached to mobile phone handsets was applied by using the COMOSAR system in both 2G and 3G communication standards. Based on measured data, SAR reduction effectiveness was calculated. Results indicated eithe…

Electromagnetic Fields and Biological EffectsElectromagnetic wave absorption materials

The challenges of nuclear waste

Karl R. Whittle2016-06-01OpenAlex

Concerns around global warming have led to a nuclear renaissance in many countries, meanwhile the nuclear industry is warning already of a need to train more nuclear engineers and scientists, who are needed in a range of areas from healthcare and radiation detection to space exploration and advanced materials as well…

Graphite, nuclear technology, radiation studiesNuclear and radioactivity studies

Quasi-bipolar channel modulation instability analysis for P-GaN gate High Electron Mobility Transistor

Cen Tang、Xueyang Li、Mingchen Hou 等 5 位作者2016-06-01OpenAlex

A quasi-bipolar channel modulation instability mechanism of the commercial P-GaN gate High Electron Mobility Transistor (HEMT) device is proposed. The device operation instability phenomenon caused by the quasi-bipolar channel modulation is investigated. Both the hole injection and the electron pumping mechanism of th…

GaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials

Synthesis of water-soluble copolymers containing porphyrin fragments in the side chain

Nadezhda L. Pechnikova、M. V. Radugin、Т. А. Агеева 等 4 位作者2016-06-01Russian Journal of General Chemistry

The methods for the synthesis of water-soluble copolymers having porphyrin units in the side chain are described. Molecular-mass characteristics of the copolymers and mole content of porphyrin in copolymers are determined.

Supramolecular Chemistry and ComplexesPorphyrin and Phthalocyanine ChemistryPhotodynamic Therapy Research Studies