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Electronic and Lattice Properties of Carbon Nanotubes

Radi A. Jishi、Daisuke Inomata、Kenji Nakao 等 5 位作者1994-06-15Journal of the Physical Society of Japan

The symmetry properties of chiral monolayered carbon nanotubes, along with the method of zone-folding, are used to study their electronic and lattice properties. The energy bands and phonon modes are classified according to the irreducible representations of the 1D periodicity of the chiral nanotubes.

Carbon Nanotubes in CompositesGraphene research and applicationsFullerene Chemistry and Applications

Theory of diamondlike amorphous carbon

D. A. Drabold、P. A. Fedders、Petra Stumm1994-06-15Physical review. B, Condensed matter

First-principles methods are used to study diamondlike amorphous carbon. Several structural models are introduced, and the topological, electronic, and vibrational properties are discussed. We explore the nature of defects in the amorphous network, and particularly the atomistic origin of the virtually defect-free opt…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchForce Microscopy Techniques and Applications

Fast crystallizing GeSb alloys for optical data storage

J. Solı́s、C. N. Afonso、J. Trull 等 4 位作者1994-06-15Journal of Applied Physics

A systematic study is presented on the optical and structural transformations induced in amorphous Ge1−xSbx alloys with Sb contents in the 0.71≤x≤0.91 range by irradiation with 250 ns laser pulses. The results show that only those films richer in Sb than the eutectics (x=0.85) show appreciable optical contrast upon ir…

Glass properties and applicationsLaser Material Processing TechniquesPhase-change materials and chalcogenides

Luminescence properties of Mn5+ in a variety of host lattices: Effects of chemical and structural variation

Ueli Oetliker、Markus Herren、Hans U. Güdel 等 6 位作者1994-06-15The Journal of Chemical Physics

The optical spectroscopic properties of Mn5+ doped into ten host lattices have been studied. The influence of both chemical variation [phosphates(V), arsenates(V), and vanadates(V)] and structural variation (spodiosites, apatites, and Li3PO4-type salts) on the luminescence properties is studied in detail. By varying t…

Luminescence Properties of Advanced MaterialsCrystal Structures and PropertiesPigment Synthesis and Properties

Characterization of the magnetic easy axis in pipeline steel using magnetic Barkhausen noise

Thomas W. Krause、L. Clapham、D.L. Atherton1994-06-15Journal of Applied Physics

The angular dependence of magnetic Barkhausen noise (MBN) on eight surfaces through the thickness of a 2% Mn steel pipeline sample was investigated. The MBN signal was analyzed by integrating the square of the MBN voltage signal with respect to the time axis. The resulting value, referred to as the MBN energy signal,…

Magnetic properties of thin filmsMagnetic Properties and ApplicationsNon-Destructive Testing Techniques

Localizedd-dexcitations in NiO(100) and CoO(100)

A. Gorschlüter、H. Merz1994-06-15Physical review. B, Condensed matter

The localized character of the 3d electrons in the antiferromagnetic oxides NiO(100) and CoO(100) has been studied with electron energy-loss spectroscopy at primary energies between 20 and 1200 eV. The spectra of both charge-transfer compounds exhibit weak but sharp loss structures within the insulating gap region due…

ZnO doping and propertiesGa2O3 and related materialsElectronic and Structural Properties of Oxides

The microscopic dynamics of freezing in supercooled colloidal fluids

David G. Grier、Cherry A. Murray1994-06-15The Journal of Chemical Physics

Using time-resolved digital video microscopy, we have tracked the reemergence of order in charge-stabilized colloidal crystals which have been shear melted into isotropic fluids. Crystallization is heterogeneously nucleated by the smooth walls of the sample container. This process is analogous to the solidification of…

Material Dynamics and PropertiesSpectroscopy and Quantum Chemical StudiesElectrostatics and Colloid Interactions

Contribution ofJmixing to the5D0−7F0transition ofEu3+ions in several host matrices

Masanori Tanaka、Goro Nishimura、Takashi Kushida1994-06-15Physical review. B, Condensed matter

The $^{5}$${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$${\mathit{F}}_{0}$ transition mechanism has been investigated for the ${\mathrm{Eu}}^{3+}$ ion in two kinds of oxide glasses, polyvinyl alcohol film, and ${\mathrm{Y}}_{2}$${\mathrm{O}}_{2}$S crystal powder, from the analysis of the laser-induced fluorescence spec…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsQuantum optics and atomic interactions

Electronic and geometric structure of La@xaC82andC82: Theory and experiment

D. M. Poirier、M. Knupfer、J. H. Weaver 等 9 位作者1994-06-15Physical review. B, Condensed matter

Core-level and valence-band photoemission studies of films of La@${\mathrm{xaC}}_{82}$ and ${\mathrm{C}}_{82}$ demonstrate charge transfer from La to the fullerene cage and the formation of a nonmetallic solid with the uppermost band centered 0.64 eV below the Fermi level. Comparison to results for ${\mathrm{C}}_{82}$…

Graphene research and applicationsDiamond and Carbon-based Materials ResearchFullerene Chemistry and Applications

Differential cross sections for plasmon excitations and reflected electron-energy-loss spectra

C. J. Tung、Y. F. Chen、C.M. Kwei 等 4 位作者1994-06-15Physical review. B, Condensed matter

Electron differential inverse mean free paths for volume-plasmon excitations and differential probabilities for surface-plasmon excitations have been calculated using dielectric response theory. A model dielectric function which satisfied sum rules and agreed with optical data was established for these calculations. I…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Spectroscopy of Dy^3+ in Ge–Ga–S glass and its suitability for 13-μm fiber-optical amplifier applications

K. Wei、D. Machewirth、J. Wenzel 等 5 位作者1994-06-15Optics Letters

Absorption and emission spectra, along with lifetime measurements, of Dy(3+) in Ge-Ga-S glasses are reported. Fluorescence is observed at 1.3, 1.8, and 2.9 microm. A Judd-Ofelt analysis is performed to determine branching ratios and quantum efficiencies. The hypersensitive transition (6)F(11/2) ? (6)H(15/2) at 1.3 mic…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsPhase-change materials and chalcogenides

Luminescence properties of nanometer-sized Si crystallites: Core and surface states

Yoshihiko Kanemitsu1994-06-15Physical review. B, Condensed matter

We have studied the mechanism of visible photoluminescence (PL) from surface-oxidized Si crystallites of 3.7 nm diameter. Under intense laser-pulse illumination, two PL bands are clearly observed: a fast-decay blue-green PL band and a slow-decay red PL band. Time-resolved PL-spectrum measurements indicate that carrier…

Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsIon-surface interactions and analysis

Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si

S. Coffa、G. Franzò、F. Priolo 等 5 位作者1994-06-15Physical review. B, Condensed matter

The luminescence quenching of Er in crystalline Si at temperatures between 77 and 300 K is investigated. Samples were prepared by solid-phase epitaxy of Er-implanted amorphous Si layers with or without O codoping. After epitaxial regrowth at 620 \ifmmode^\circ\else\textdegree\fi{}C, thermal annealing at 900 \ifmmode^\…

Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Visible photoluminescence in Si+-implanted silica glass

Tsutomu Shimizu-Iwayama、Katsunori Fujita、Setsuo Nakao 等 6 位作者1994-06-15Journal of Applied Physics

We have investigated visible photoluminescence excited by Ar-ion laser (488 nm, 2.54 eV) at room temperature from Si+-implanted silica glass, as-implanted and after subsequent annealing in vacuum. We found two visible luminescence bands: one peaked around 2.0 eV, observed in as-implanted specimens and annealed complet…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceIon-surface interactions and analysis

Design of waveguide-grating filters with symmetrical line shapes and low sidebands

S. S. Wang、Robert Magnusson1994-06-15Optics Letters

We show that ideal reflection filters can be designed by combining guided-mode resonance effects in waveguide gratings with antireflection effects of thin-film structures. Since the guided-mode resonance effect overrides the antireflection effect this filter provides a symmetrical line shape with near-zero reflectivit…

Photonic and Optical DevicesPhotonic Crystals and ApplicationsOptical Coatings and Gratings

Quantum-dot quantum well CdS/HgS/CdS: Theory and experiment

Detlef Schooss、Alf Mews、Alexander Eychmüller 等 4 位作者1994-06-15OpenAlex

An extended theoretical approach for calculating the 1s-1s electronic transition in spherically layered semiconductor quantum dots is presented. The extension over the common effective-mass approximation includes the implementation of the Coulomb interaction and finite potential wells at the particle boundaries. The c…

Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsElectronic and Structural Properties of Oxides

First-principles calculations of the energetics of stoichiometricTiO2surfaces

M. Ramamoorthy、David Vanderbilt、R. D. King-Smith1994-06-15OpenAlex

We present self-consistent ab initio total-energy calculations of the equilibrium relaxed structures and surface energies of the stoichiometric (1\ifmmode\times\else\texttimes\fi{}1) (110), (100), (001), and (011) surfaces of ${\mathrm{TiO}}_{2}$. The relaxations of atoms on these surfaces are found to be substantial,…

Thermal and Kinetic AnalysisElectronic and Structural Properties of OxidesChemical and Physical Properties of Materials

Low energy electron scattering in H2, N2and O2

J Randell、S L Lunt、G Mrotzek 等 5 位作者1994-06-14Journal of Physics B Atomic Molecular and Optical Physics

Electron beam transmission experiments have been performed, in the energy range 10 meV to 175 meV, with a magnetically collimated electron beam formed in a synchrotron radiation photoionization source using SuperACO, LURE. The apparatus has been calibrated with He and absolute backward scattering cross sections have b…

Plasma Diagnostics and ApplicationsX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques

Porosity superlattices: a new class of Si heterostructures

M. Berger、C. Dieker、M. Thönissen 等 9 位作者1994-06-14Journal of Physics D Applied Physics

Porosity superlattices have been investigated by transmission electron microscopy, photoluminescence and reflectance spectroscopy. The superlattices were formed on p-type doped Si using two different techniques. Firstly, for homogeneously doped substrates we have periodically varied the formation current density and t…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces

Theoretical modelling of the development of the positive spark in long gaps

A. Bondiou、I. Gallimberti1994-06-14Journal of Physics D Applied Physics

The main purpose of this paper is to present a physical model of the positive discharge in long air gaps. A large number of previous experimental and theoretical studies led to the identification of the different successive phases of the spark development: formation and propagation of first corona streamers, inception…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaAerosol Filtration and Electrostatic Precipitation