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Phonon modes of diamond (100) surfaces fromab initiocalculations

Dominic Alfonso、D. A. Drabold、Sergio E. Ulloa1995-01-15Physical review. B, Condensed matter

We present a realistic theoretical study of the surface-phonon spectra of diamond (100) surfaces. Our results reproduce the major features of the vibrational spectra of clean and hydrogenated diamond (100)-(2\ifmmode\times\else\texttimes\fi{}1) surfaces obtained from experiments. The reconstruction of the diamond (100…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of Oxides

Direct observation of stacking disorder in a colloidal crystal

Nynke A. M. Verhaegh、Jeroen S. van Duijneveldt、Alfons van Blaaderen 等 4 位作者1995-01-15The Journal of Chemical Physics

Colloidal crystals of rhodamine labeled silica spheres dispersed in chloroform have been studied with fluorescence confocal scanning laser microscopy. We report the first determination of the three-dimensional crystalline stacking in the bulk of a concentrated dispersion. The structure was found to consist of a random…

Material Dynamics and PropertiesSurfactants and Colloidal SystemsPickering emulsions and particle stabilization

Photochromic command surface induced switching of liquid crystal optical waveguide structures

Harald Knobloch、H. Orendi、Michael Büchel 等 6 位作者1995-01-15Journal of Applied Physics

We report on optical waveguide structures containing a thin liquid crystal (LC) film held between two photochromic command surfaces. The command surfaces consist of three monomolecular layers of a polymer with azobenzene side chains deposited according to the Langmuir–Blodgett–Kuhn technique. When exposed to light of…

Liquid Crystal Research AdvancementsPhotochromic and Fluorescence ChemistryMolecular spectroscopy and chirality

Fresnel diffraction of substructured gratings: matrix description

Víctor Arrizón、J. Ojeda‐Castañeda1995-01-15Optics Letters

We present a matrix formalism to describe the near-field diffraction pattern, at fractions of a Talbot distance, of a grating whose unit cell is composed of a discrete substructure. We show that this formalism is useful for designing Lohmann array illuminators.

Photonic and Optical DevicesPhotonic Crystals and ApplicationsOptical Coatings and Gratings

Very-low-energy electron-diffraction analysis of oxygen on Cu(001)

S.M. Thurgate、Chunqiang Sun1995-01-15Physical review. B, Condensed matter

We have developed a method for adding the effect of the surface barrier to the Van Hove--Tong suite of low-energy electron-diffraction programs enabling us to analyze very-low-energy electron-diffraction (LEED) spectra from complex reconstructed systems. The method models the effect of the surface-potential barrier on…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Ab initiototal-energy pseudopotential calculations for polymorphicB2O3crystals

Akira Takada、C. Richard A. Catlow、J. S. Lin 等 7 位作者1995-01-15Physical review. B, Condensed matter

We use ab initio pseudopotential electronic-structure methods to describe successfully both the detailed static structures and the structural transformation in ${\mathrm{B}}_{2}$${\mathrm{O}}_{3}$ crystals. Employing a reduced cell volume, with full relaxation of all internal coordinates, our calculations model the st…

High-pressure geophysics and materialsCrystal Structures and PropertiesElectronic and Structural Properties of Oxides

Photoinduced surface deposition of metallic silver in Ag-As-S glasses

Takeshi Kawaguchi、Shigeo Maruno1995-01-15Journal of Applied Physics

Detailed characteristics of photoinduced surface deposition (PSD) of metallic Ag have been studied using Ag-As-S bulk glasses to reveal the mechanism. The composition dependence of PSD in the AgxAs60−xS40 (25≤x≤45) system shows that the photosensitivity decreases with a decrease in the Ag content and becomes negligibl…

Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides

Evolution of nanometer voids in polycarbonate under mechanical stress and thermal expansion using positron spectroscopy

Li Xie、D. W. Gidley、Hristo Hristov 等 4 位作者1995-01-15Journal of Polymer Science Part B Polymer Physics

Abstract Positron Annihilation Lifetime Spectroscopy (PALS) measurements were conducted on polycarbonate subjected to either thermal expansion or to tensile and compressive strains. It was found that thermal expansion affected both the nanometer hole size and the hole number density, whereas mechanical stress affected…

Polymer crystallization and propertiesPolymer Nanocomposites and PropertiesMuon and positron interactions and applications

Location of an Amphipathic .alpha.-Helix in Peptides Using Reversed-Phase HPLC Retention Behavior of D-Amino Acid Analogs

Eberhard Krause、Michael Beyermann、M. Dathe 等 5 位作者1995-01-15Analytical Chemistry

The reversed-phase HPLC retention behavior of D-amino acid replacement sets of an amphipathic model peptide, neuropeptide Y, and corticotropin releasing factor has been studied. The results demonstrate that D-amino acid substitutions destabilized the amphipathic alpha-helix, leading to a decrease of fractional helicit…

Analytical Chemistry and ChromatographyChemical Synthesis and AnalysisSupramolecular Self-Assembly in Materials

Photoluminescence ina-C:H films

F. Demichelis、Steffen Schreiter、Alberto Tagliaferro1995-01-15Physical review. B, Condensed matter

Amorphous hydrogenated carbon films show a characteristic photoluminescence behavior that is of great interest for the study of their electronic structure. In the present paper we develop a model of the photoluminescence process in a polymerlike hydrocarbon on the basis of a mixed ${\mathit{sp}}^{2\mathrm{\ensuremath{…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchThin-Film Transistor Technologies

Electronic structure ofSi46andNa2Ba6Si46

Susumu Saito、Atsushi Oshiyama1995-01-15Physical review. B, Condensed matter

We study solids of ${\mathrm{Si}}_{20}$ fullerenes, ${\mathrm{Si}}_{46}$ and ${\mathrm{Na}}_{2}$${\mathrm{Ba}}_{6}$${\mathrm{Si}}_{46}$, in the framework of density-functional theory. The electronic structure of ${\mathrm{Si}}_{46}$ is remarkably different from that of the diamond Si lattice due to its pentagonal netw…

High-pressure geophysics and materialsBoron and Carbon Nanomaterials ResearchSuperconductivity in MgB2 and Alloys

Transport properties of semiconducting ternary vanadate glasses

A. Ghosh1995-01-15The Journal of Chemical Physics

Measurements are reported for the electrical dc conductivity of the semiconducting vanadium tellurite glasses containing P2O5, Sb2O3, or Bi2O3 in the temperature range 80–450 K. The experimental data have been analyzed in the light of existing theoretical models. It has been observed that the general behavior of the e…

Material Dynamics and PropertiesGlass properties and applicationsPhase-change materials and chalcogenides

Current-voltage characteristics of porous-silicon layers

D. B. Dimitrov1995-01-15Physical review. B, Condensed matter

The current-voltage characteristics of porous-silicon structures are presented and discussed. Evidence is given that the forward and reverse currents show Schottky-junction-like behavior. Experimental measurements of reverse I-V curves at different ambient humidities demonstrate that the reverse current depends strong…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces

Anomalous Urbach tail in GaAs

C. W. Greeff、H. R. Glyde1995-01-15Physical review. B, Condensed matter

The Urbach tail in crystalline GaAs and Si due to thermal vibration is evaluated in the temperature range 0--810 K. Recent experiments suggest that there is no thermally induced Urbach tail in undoped GaAs. This is most unexpected since thermally induced tails at the absorption edge having the Urbach form and widths $…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces

GWself-energy calculations of carrier-induced band-gap narrowing inn-type silicon

Andreas Oschlies、R. W. Godby、R. J. Needs1995-01-15Physical review. B, Condensed matter

We investigate the band-gap narrowing in silicon caused by the introduction of additional electron carriers together with a neutralizing uniform positive background charge. The local-density approximation (LDA) is shown to be inadequate for calculating the band-gap narrowing. Using a first-principles technique and the…

Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsSemiconductor materials and interfaces

Structure and property development in poly(p‐phenylene terephthalamide) during heat treatment under tension

K.‐G. Lee、R. Barton、J. M. Schultz1995-01-15Journal of Polymer Science Part B Polymer Physics

Abstract The evolution of several structural characteristics during isothermal heat treatment of poly( p ‐phenylene terephthalamide) was studied. In this work, heat treatment was interrupted after different treatment times, with the specimens immediately quenched to room temperature. These specimens were then characte…

Polymer crystallization and propertiesPolymer Nanocomposites and PropertiesFiber-reinforced polymer composites

Diffractive phase elements based on two-dimensional artificial dielectrics

F. T. Chen、H. G. Craighead1995-01-15Optics Letters

We have designed, fabricated, and tested a blazed artificial dielectric transmission grating in fused quartz for use at the 633-nm wavelength. By locally varying the index, using fabricated two-dimensional arrays of dielectric cylinders, we can achieve a desired phase modulation to produce a diffractive phase element…

Photonic and Optical DevicesPhotonic Crystals and ApplicationsOptical Coatings and Gratings

Relative stability of hexagonal and planar structures of hypotheticalC3N4solids

José Ortega、Otto F. Sankey1995-01-15Physical review. B, Condensed matter

We have performed a first-principles electronic-structure study of a planar structural form of a hypothetical ${\mathrm{C}}_{3}$${\mathrm{N}}_{4}$ solid and compared its energy to a fully three-dimensional form. We use a mixed basis of pseudoatomic orbitals and low-kinetic-energy plane waves to determine the single-pa…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchBoron and Carbon Nanomaterials Research

Ultrathin films of Pt on TiO 2 (110): Growth and chemisorption-induced surfactant effects

Hans‐Peter Steinrück、F. Pesty、Lei Zhang 等 4 位作者1995-01-15Physical review. B, Condensed matter

The growth of ultrathin platinum films on a rutile ${\mathrm{TiO}}_{2}$(110) surface has been studied using low-energy ion scattering and x-ray photoelectron spectroscopy. In the temperature range between 160 and 420 K, Pt grows in three-dimensional islands on the ${\mathrm{TiO}}_{2}$ surface with the size of the isla…

Catalytic Processes in Materials ScienceElectronic and Structural Properties of OxidesSurface and Thin Film Phenomena

Theory of one-phonon Raman scattering in semiconductor microcrystallites

M. P. Chamberlain、C. Trallero‐Giner、M. Cardona1995-01-15Physical review. B, Condensed matter

We have developed a theory of one-phonon Raman scattering in semiconductor microcrystallites and quantum dots. In particular, we have given a complete description of the phonon modes of spherical structures embedded in another material, which includes a correct treatment of the mechanical and electrostatic matching co…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films