Tatsuo Kanashiro、Toshihiro Yamanishi、Yutaka Kishimoto 等 6 位作者1994-09-15Journal of the Physical Society of Japan
The temperature dependence of the spin-lattice relaxation time for 7 Li has been measured in a single crystal of LiNaSO 4 over the temperature range of 450 K–770 K. The result can be explained by a mechanism of vacancy diffusion. The activation energies for the hopping of Li + and Na + vacancies are estimated to be E…
Crystal Structures and PropertiesAdvanced NMR Techniques and ApplicationsSolid-state spectroscopy and crystallography
L. M. R. Scolfaro、D. Beliaev、R. Enderlein 等 4 位作者1994-09-15Physical review. B, Condensed matter
The electronic subband structure of periodically n-type \ensuremath{\delta}-doped silicon is calculated self-consistently within the local-density approximation. Two types of energy levels are distinguished, one due to valleys transverse to the superlattice axis, and the other due to longitudinal valleys. Minibands, p…
Semiconductor Quantum Structures and DevicesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces
W. P. Gillin、D. J. Dunstan1994-09-15Physical review. B, Condensed matter
It is often suggested that the rate of interdiffusion at semiconductor heterostructure interfaces may be strongly dependent on elastic strain in the structure. Experimental and theoretical results show that strain does not, and should not, affect interdiffusion.
ZnO doping and propertiesTheoretical and Computational PhysicsSolidification and crystal growth phenomena
George Maroulis1994-09-15The Journal of Chemical Physics
Accurate values are reported for the dipole (μ) and quadrupole (Θ) moment, dipole (α) polarizability, and first (β) and second (γ) dipole hyperpolarizability of ozone. Electron correlation effects are accounted for via coupled cluster (CC) theory with double substitutions corrected for the effects of single and triple…
Advanced Chemical Physics StudiesNonlinear Optical Materials ResearchAtmospheric Ozone and Climate
Noboru Takeuchi、Ignacio L. Garzón1994-09-15Physical review. B, Condensed matter
We present results of a first-principles molecular-dynamics study of structural, dynamical, and electronic properties of liquid Ge. In agreement with experiments, the electronic density of states shows that liquid Ge is metallic. However, an analysis of the electronic charge density, pair correlation function, and str…
Material Dynamics and PropertiesSpectroscopy and Quantum Chemical Studiesnanoparticles nucleation surface interactions
Toshiyuki Kawasaki、T. Terashima、Saburo Suzuki 等 4 位作者1994-09-15Journal of Applied Physics
Techniques for visualization and quantification of the latent electric charge image on dielectric materials have been developed using Pockels effect of a BSO (Bi12SiO20) single crystal, a charge coupled device camera recording system, and a computer image processing technique. The Pockels device of the BSO single crys…
High voltage insulation and dielectric phenomenaPlasma Diagnostics and ApplicationsAerosol Filtration and Electrostatic Precipitation
John Kalomiros、A. N. Anagnostopoulos1994-09-15Physical review. B, Condensed matter
A study of the optical properties of the layered compound ${\mathrm{TlInS}}_{2}$ is presented. Reflection spectra were measured at room temperature, in the energy region 1.5--6.2 eV. Transmission spectra were measured in the temperature range 10--290 K, in the energy region 1.5--3.5 eV. Two structures, at energy posit…
Crystal Structures and PropertiesNonlinear Optical Materials ResearchSolid-state spectroscopy and crystallography
L. Komitov、S. T. Lagerwall、B. Stebler 等 4 位作者1994-09-15Journal of Applied Physics
The chiral nematic phase aligned with its helical axis along one preferred direction, being parallel to the confining substrates, exhibits a linear electro-optic effect when an electric field is applied normally to the substrates. The effect is considered to be of flexoelectric origin. A sign reversal of the effect is…
Metamaterials and Metasurfaces ApplicationsLiquid Crystal Research AdvancementsOrbital Angular Momentum in Optics
E. Koppensteiner、G. Bauer、H. Kibbel 等 4 位作者1994-09-15Journal of Applied Physics
Double-crystal and triple-axis x-ray diffractometry was used to characterize in detail the strain and composition of short period Si6Ge4, Si8Ge8, Si9Ge6, and Si17Ge2 strained-layer superlattices (SLSs), grown by molecular-beam epitaxy. Nominally strain-symmetrized superlattices, intended to be free standing from under…
Silicon and Solar Cell TechnologiesMetallic Glasses and Amorphous AlloysSolidification and crystal growth phenomena
В. И. Анисимов、P. J. C. Kuiper、Joseph Nordgren1994-09-15Physical review. B, Condensed matter
A method for first-principles calculations of spectra of strongly correlated systems is proposed. The impurity-Anderson-model is solved with a many-electron trial wave function. The obtained eigenvalues and eigenfunctions are used for one-electron removal (or addition) Green's-functions calculations. All parameters of…
Advanced Chemical Physics StudiesX-ray Spectroscopy and Fluorescence AnalysisElectron and X-Ray Spectroscopy Techniques
K. Sierański、J. Szatkowski、J. Misiewicz1994-09-15Physical review. B, Condensed matter
Semiempirical tight-binding electronic-energy-band structures of the following ${\mathrm{II}}_{3}$${\mathrm{V}}_{2}$ semiconductors are presented: ${\mathrm{Cd}}_{3}$${\mathrm{P}}_{2}$, ${\mathrm{Zn}}_{3}$${\mathrm{P}}_{2}$, ${\mathrm{Cd}}_{3}$${\mathrm{As}}_{2}$, and ${\mathrm{Zn}}_{3}$${\mathrm{As}}_{2}$. The zinc-b…
Chalcogenide Semiconductor Thin FilmsMachine Learning in Materials ScienceSurface and Thin Film Phenomena
Zhigang Suo、W. Wang1994-09-15Journal of Applied Physics
Interconnects are susceptible to solid diffusion under residual stress, electric current, and elevated temperature. As atoms diffuse, voids nucleate, drift, and enlarge. At some point, the voids of rounded shape can collapse to narrow slits and sever the interconnects. The fatal slits are often found to be transgranul…
Electronic Packaging and Soldering TechnologiesCopper Interconnects and ReliabilityElectromagnetic Effects on Materials
O.A. Aktsipetrov、Andrey A. Fedyanin、V. Golovkina 等 4 位作者1994-09-15Optics Letters
For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si-SiO(2) interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate t…
Silicon Nanostructures and PhotoluminescenceSpectroscopy and Quantum Chemical StudiesSpectroscopy Techniques in Biomedical and Chemical Research
B. Marcus、L. Fayette、Michel Mermoux 等 5 位作者1994-09-15Journal of Applied Physics
Diamond and carbonaceous films grown in a microwave assisted plasma reactor have been characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy. This study is mainly focused on the identification of the different carbonaceous compounds which can coexist with the diamond depending on the…
Metal and Thin Film MechanicsHigh-pressure geophysics and materialsDiamond and Carbon-based Materials Research
T. Keyes1994-09-15The Journal of Chemical Physics
The unstable mode density of states 〈ρu(ω;T)〉 is obtained from computer simulation and is analyzed, theoretically and empirically, over a broad range of supercooled and normal liquid temperatures in the unit density Lennard-Jones liquid. The functional form of 〈ρu(ω;T)〉 is determined and the ω, T dependence is seen to…
Phase Equilibria and ThermodynamicsMaterial Dynamics and PropertiesTheoretical and Computational Physics
Kiyoshi Ogata、J.F.D. Chubaci、F. Fujimoto1994-09-15Journal of Applied Physics
Carbon nitride films with the composition ratio CR(C/N)=0.5–3.0 were prepared by the ion and vapor deposition method, where carbon was evaporated on various substrates while being simultaneously bombarded with 0.5–10.0 keV nitrogen ions. The properties of the films were studied by x-ray photoelectron spectroscopy (XPS…
Metal and Thin Film MechanicsSemiconductor materials and devicesDiamond and Carbon-based Materials Research
Hongyao Zhu、Alexandrù T. Balaban、Douglas J. Klein 等 4 位作者1994-09-15The Journal of Chemical Physics
First, a new approach to treat the strongly correlated conjugated-circuit model on two-dimensional networks is made with computational effort comparable to that for corresponding tight-binding models. Toward this end a translationally symmetric arrow assignment is used to construct an antisymmetrically signed ‘‘adjace…
Carbon Nanotubes in CompositesGraphene research and applicationsSynthesis and Properties of Aromatic Compounds
Xunhu Dai、D. Viehland1994-09-15Journal of Applied Physics
Lanthanum-modified lead zirconate titanate specimens with between 0 and 9 at.% lanthanum and a Zr/Ti ratio of 95/5, Pb1−xLax(Zr0.95Ti0.05)1−x/4O3 (PLZT 100x/95/5), have been investigated using dielectric spectroscopy, Sawyer–Tower polarization, and dilatometric measurements. La modification was found to suppress the s…
Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsSolid-state spectroscopy and crystallography
C. R. Li、T. S. Sudarshan1994-09-15Journal of Applied Physics
Surface preflashover phenomena across alumina ceramics in vacuum are presented. The localized plasmas are identified by the spatially resolved images that appear in a pulse surface preflashover phase using an intensified charge-coupled-device camera, along with coordinated, time-resolved preflashover current and lumin…
Semiconductor materials and devicesHigh voltage insulation and dielectric phenomenaElectrostatic Discharge in Electronics
Vincent Senez、Dominique Collard、B. Baccus 等 5 位作者1994-09-15Journal of Applied Physics
The numerical modeling of the oxidation of silicon is analyzed from a nonlinear viscoelastic approach. Its mechanical and stress dependent parameters are determined for silicon dioxide and nitride. The study focuses on the rheological behavior of the materials. The two dimensional simulations of silicon cylinders oxid…
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceAdvanced Surface Polishing Techniques