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第 194921 / 197061 页 · 当前展示 3,898,401–3,898,420 / 3,941,213 条匹配结果 · 摘要仅作预览

Electric-field-induced first-order Raman scattering in pure KCl and KBr

Matthias C. Krantz、Fritz Lüty1985-02-15Physical review. B, Condensed matter

Electric-field-induced first-order Raman scattering (FIFORS) by the normally Raman inactive LO and TO phonons is observed in the pure alkali halide crystals KCl and KBr under electric fields of 2.5\ifmmode\times\else\texttimes\fi{}${10}^{5}$ V/cm. Cross sections for the FIFORS--active modes are calibrated and the resu…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsSolid-state spectroscopy and crystallography

Effect of pressure on the Raman and electronic absorption spectra of naphthalene- and perylenetetracarboxylic dianhydrides

A. Jayaraman、M. L. Kaplan、P. H. Schmidt1985-02-15The Journal of Chemical Physics

The effect of pressure on the optical absorption and Raman spectra of 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) and on the optical absorption edge in 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was investigated, using a diamond anvil cell. In NTCDA the absorption edge shifts red by about 8000 cm−…

Nonlinear Optical Materials ResearchPhotochemistry and Electron Transfer StudiesSpectroscopy and Quantum Chemical Studies

Native defects in undoped semi-insulating CdSe studied by photoluminescence and absorption

David L. Rosen、Q. X. Li、R. R. Alfano1985-02-15Physical review. B, Condensed matter

Recombination of carriers in semi-insulating undoped CdSe was studied using infrared absorption and both the polarization and excitation power dependence of the photoluminescence spectra. The photoluminescence measurements showed that a deep donor and a shallow-acceptor state dominate the recombination process, which…

Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsAdvanced Semiconductor Detectors and Materials

Saturation photoconductivity in CdIn 2 S 4

S. Charbonneau、E. Fortin、A. Anedda1985-02-15Physical review. B, Condensed matter

At excitation energies corresponding to definite extrinsic transitions in ${\mathrm{CdIn}}_{2}$${\mathrm{S}}_{4}$, the photoconductivity is investigated as a function of light intensity over a maximum of 12 orders of magnitude ${(10}^{16}$ to ${10}^{28}$ photons/${\mathrm{m}}^{2}$ sec). For certain wavelength ranges a…

Chalcogenide Semiconductor Thin FilmsCrystal Structures and PropertiesSolid-state spectroscopy and crystallography

Low-temperature heat transport by charge carriers in doped semiconductors

G. S. Kumar、Jan W. Vandersande、T. Klitsner 等 5 位作者1985-02-15Physical review. B, Condensed matter

The electronic contribution to the thermal conductivity in degenerate semiconductors has been measured at low temperature in fine-grained ceramic samples in which the lattice thermal conductivity is reduced by grain-boundary scattering of the phonons. The validity of the Wiedemann-Franz-Lorenz law has been demonstrate…

Advanced Thermoelectric Materials and DevicesThermal properties of materialsThermal Radiation and Cooling Technologies

Dielectric Properties on 72 K Phase Transition of KOH-doped Ice

Syuji Kawada、Hisao Dohata1985-02-15Journal of the Physical Society of Japan

The temperature dependence of the dielectric dispersion of KOH-doped ice was measured at the temperature range from 55 K to 90 K at frequencies 0.002 Hz∼1 Hz. The phase transition at 72 K was clearly observed only at the heating stage from the temperature dependence of the dielectric constant and the relaxation time.…

Material Dynamics and PropertiesAcoustic Wave Phenomena ResearchScientific Research and Discoveries

Site-selection spectroscopy and energy transfer studies of Eu3+ ions in glass hosts

Gang Xu、Richard C. Powell1985-02-15Journal of Applied Physics

Time-resolved site-selection spectroscopy techniques using a pulsed tunable dye laser were used to investigate the spectral structure and dynamics of Eu3+ ions in six oxide and one fluoride glass hosts. Network modifier ions were found to be important in determining the details of the spectral structure which can be r…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsRandom lasers and scattering media

Weak Localization in Graphite

Yōji Koike、Seizo Morita、T. Nakanomyo 等 4 位作者1985-02-15Journal of the Physical Society of Japan

Conductivity and magnetoconductivity have been measured for various kinds of graphite crystals at low temperatures down to 0.03 K. Anomalous behaviours have been found in polycrystalline (but well oriented) specimens of graphite. At low temperatures below 0.1 K, the conductivity shows T 1/2 dependence in and without m…

Graphene research and applicationsLow-power high-performance VLSI designQuantum and electron transport phenomena

Spontaneous decay of TA phonons

Shin-ichiro Tamura、Humphrey J. Maris1985-02-15Physical review. B, Condensed matter

Anharmonic decay of high-energy transverse acoustic (TA) phonons satisfying \ensuremath{\Elzxh}\ensuremath{\omega}\ensuremath{\gg}${k}_{B}$T is studied taking account of the elastic anisotropy of real crystalline solids. Dispersive effects are assumed to be small. We find that the decay rate is very anisotropic. The p…

Ultrasonics and Acoustic Wave PropagationThermal properties of materialsQuantum, superfluid, helium dynamics

Surface dipole and Fermi-level position on clean, oxygen-, and water-covered cylindrical Si crystals: A photoelectron spectroscopy study

W. Ranke、Y.R. Xing1985-02-15Physical review. B, Condensed matter

Photoelectron spectroscopy, including emission from the Si 2p core level, was used to investigate the orientation dependence of the photoionization threshold \ensuremath{\xi}(\ensuremath{\alpha}) and the surface position of the valence-band edge below the Fermi level, ${E}_{\mathrm{VFS}}$(\ensuremath{\alpha}), on a cy…

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesGa2O3 and related materials

Onset of hopping conduction in carbon-ion-implanted diamond

Johan F. Prins1985-02-15Physical review. B, Condensed matter

The conduction of diamond implanted with carbon ions, at a target temperature of 250 \ifmmode^\circ\else\textdegree\fi{}C, was studied as a function of ion energy using the electrical sheet resistance of these implanted layers as a probe. It was found that ion doses at which the onset of hopping conduction occurs incr…

Diamond and Carbon-based Materials ResearchForce Microscopy Techniques and ApplicationsIon-surface interactions and analysis

High-resolution angle-resolved photoemission studies of the surface states on Al(111) and Al(001)

S. D. Kevan、N. G. Stoffel、N. V. Smith1985-02-15Physical review. B, Condensed matter

High-resolution angle-resolved photoemission has been used to study Al(111) and Al(001). Two new surface states at \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{} and K\ifmmode\bar\else\textasciimacron\fi{} of Al(111) were observed and characterized. Their energy positions are in good accord with recent self…

Advanced Chemical Physics StudiesElectron and X-Ray Spectroscopy TechniquesSurface and Thin Film Phenomena

Impurity Effects on Superconductivity and Charge Density Waves in NbSe3

Kazushige Kawabata1985-02-15Journal of the Physical Society of Japan

The superconducting transition temperature T c and the sizes of the resistive anomalies due to both the q 1 - and the q 2 -CDW formations are examined on single crystals of Ta-doped NbSe 3 . With addition of Ta, T c increases steeply from below 70 mK to 1.7 K but turns to decrease at 5 at%Ta. The sizes of the resistiv…

Physics of Superconductivity and MagnetismOrganic and Molecular Conductors ResearchIron-based superconductors research

Luminescence and photoconductivity in magnesium aluminum spinel

Pradip K. Bandyopadhyay、G.P. Summers1985-02-15Physical review. B, Condensed matter

Ultraviolet-light excitation of thermochemically reduced ${\mathrm{MgAl}}_{2}$${\mathrm{O}}_{4}$ single crystals below room temperature produces a luminescence band with a peak at 2.69 eV. The excitation spectrum of the 2.69-eV band coincides with the broad F-center absorption band at 5.30 eV. The 2.69-eV band is also…

Luminescence Properties of Advanced MaterialsPerovskite Materials and ApplicationsElectronic and Structural Properties of Oxides

Band structures of all polycrystalline forms of silicon dioxide

Y. P. Li、W. Y. Ching1985-02-15Physical review. B, Condensed matter

The band structures and density of states of all polycrystalline forms of ${\mathrm{SiO}}_{2}$ with known crystal structures are calculated using a first-principles orthogonalized linear combination of atomic orbitals method. These include 4:2-coordinated polymorphs of \ensuremath{\alpha}-quartz, \ensuremath{\beta}-qu…

Glass properties and applicationsCrystal Structures and PropertiesNuclear materials and radiation effects

Spontaneous decay rates of LA phonons in quasi-isotropic solids

Shin-ichiro Tamura1985-02-15Physical review. B, Condensed matter

The spontaneous decay rates of LA phonons are calculated in terms of the second- and third-order elastic constants in the isotropic model. It is shown that the dominant decay channel is LA\ensuremath{\rightarrow}TA+TA but not LA\ensuremath{\rightarrow}LA+TA and total decay rates at 1-THz frequency range from ${10}^{5}…

Ultrasonics and Acoustic Wave PropagationAcoustic Wave Resonator TechnologiesSolid-state spectroscopy and crystallography

Excimer laser ablation and thermal coupling efficiency to polymer films

P. E. Dyer、J. Sidhu1985-02-15Journal of Applied Physics

Thermal coupling and etch rate measurements are reported for polyethylene terephthalate and polyimide films irradiated at excimer laser wavelengths of 193, 248, and 308 nm. Thermal energy balance is observed up to a threshold fluence but above this the energy absorbed remains approximately constant, the excess energy…

Laser Material Processing TechniquesLaser-induced spectroscopy and plasmaElectron and X-Ray Spectroscopy Techniques

Magnetic Structure of (Ba1-xSrx)2Zn2Fe1 2O22(x=0-1.0)

Nobuyuki Momozawa、Yasuo Yamaguchi、Humihiko Takei 等 4 位作者1985-02-15Journal of the Physical Society of Japan

Neutron and X-ray diffraction studies and magnetization measurements were carried out on single crystals of (Ba 1- x Sr x ) 2 Zn 2 Fe 12 O 22 . The substitution of Ba by Sr produces two effects on the crystal structure: a lattice deformation around the Sr ions and a redistribution of the Zn and Fe ions in the tetrahed…

Multiferroics and related materialsMagnetic Properties and Synthesis of FerritesMagneto-Optical Properties and Applications

Electronic structure of MnSb

R. Coehoorn、C. Haas、R. A. de Groot1985-02-15Physical review. B, Condensed matter

Self-consistent, spin-polarized energy-band calculations have been performed for MnSb, for both ferromagnetic and antiferromagnetic spin alignments. For ferromagnetic MnSb we find a 3${d}^{5.5}$ configuration on the Mn atom, with a magnetic moment of 3.3${\ensuremath{\mu}}_{B}$ on the Mn sites, and -0.06${\ensuremath{…

ZnO doping and propertiesMagnetic and transport properties of perovskites and related materialsHeusler alloys: electronic and magnetic properties

Crystal structure of low cristobalite at 10, 293, and 473 K: Variation of framework geometry with temperature

J. J. Pluth、J. V. Smith、J. Faber1985-02-15Journal of Applied Physics

The crystal structure of low cristobalite (SiO2) was refined at 10, 293, and 473 K from time-of-flight neutron powder diffraction data. One of the Si-O distances and one Si-O-Si angle change considerably: 10 K, 1.602(1) and 1.617(1) Å, 144.7(1)°; 473 K, 1.605(2) and 1.590(2) Å, 148.4(1)°. The angular distortion of the…

Crystal Structures and PropertiesSolid-state spectroscopy and crystallography