Materials Literature
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The electronic subband structure of periodically n-type \ensuremath{\delta}-doped silicon is calculated self-consistently within the local-density approximation. Two types of energy levels are distinguished, one due to valleys transverse to the superlattice axis, and the other due to longitudinal valleys. Minibands, p…
It is often suggested that the rate of interdiffusion at semiconductor heterostructure interfaces may be strongly dependent on elastic strain in the structure. Experimental and theoretical results show that strain does not, and should not, affect interdiffusion.
Accurate values are reported for the dipole (μ) and quadrupole (Θ) moment, dipole (α) polarizability, and first (β) and second (γ) dipole hyperpolarizability of ozone. Electron correlation effects are accounted for via coupled cluster (CC) theory with double substitutions corrected for the effects of single and triple…
We present results of a first-principles molecular-dynamics study of structural, dynamical, and electronic properties of liquid Ge. In agreement with experiments, the electronic density of states shows that liquid Ge is metallic. However, an analysis of the electronic charge density, pair correlation function, and str…
Techniques for visualization and quantification of the latent electric charge image on dielectric materials have been developed using Pockels effect of a BSO (Bi12SiO20) single crystal, a charge coupled device camera recording system, and a computer image processing technique. The Pockels device of the BSO single crys…
A study of the optical properties of the layered compound ${\mathrm{TlInS}}_{2}$ is presented. Reflection spectra were measured at room temperature, in the energy region 1.5--6.2 eV. Transmission spectra were measured in the temperature range 10--290 K, in the energy region 1.5--3.5 eV. Two structures, at energy posit…
The chiral nematic phase aligned with its helical axis along one preferred direction, being parallel to the confining substrates, exhibits a linear electro-optic effect when an electric field is applied normally to the substrates. The effect is considered to be of flexoelectric origin. A sign reversal of the effect is…
Double-crystal and triple-axis x-ray diffractometry was used to characterize in detail the strain and composition of short period Si6Ge4, Si8Ge8, Si9Ge6, and Si17Ge2 strained-layer superlattices (SLSs), grown by molecular-beam epitaxy. Nominally strain-symmetrized superlattices, intended to be free standing from under…
A method for first-principles calculations of spectra of strongly correlated systems is proposed. The impurity-Anderson-model is solved with a many-electron trial wave function. The obtained eigenvalues and eigenfunctions are used for one-electron removal (or addition) Green's-functions calculations. All parameters of…
Semiempirical tight-binding electronic-energy-band structures of the following ${\mathrm{II}}_{3}$${\mathrm{V}}_{2}$ semiconductors are presented: ${\mathrm{Cd}}_{3}$${\mathrm{P}}_{2}$, ${\mathrm{Zn}}_{3}$${\mathrm{P}}_{2}$, ${\mathrm{Cd}}_{3}$${\mathrm{As}}_{2}$, and ${\mathrm{Zn}}_{3}$${\mathrm{As}}_{2}$. The zinc-b…
Interconnects are susceptible to solid diffusion under residual stress, electric current, and elevated temperature. As atoms diffuse, voids nucleate, drift, and enlarge. At some point, the voids of rounded shape can collapse to narrow slits and sever the interconnects. The fatal slits are often found to be transgranul…
For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si-SiO(2) interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate t…
Diamond and carbonaceous films grown in a microwave assisted plasma reactor have been characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy. This study is mainly focused on the identification of the different carbonaceous compounds which can coexist with the diamond depending on the…
The unstable mode density of states 〈ρu(ω;T)〉 is obtained from computer simulation and is analyzed, theoretically and empirically, over a broad range of supercooled and normal liquid temperatures in the unit density Lennard-Jones liquid. The functional form of 〈ρu(ω;T)〉 is determined and the ω, T dependence is seen to…
Carbon nitride films with the composition ratio CR(C/N)=0.5–3.0 were prepared by the ion and vapor deposition method, where carbon was evaporated on various substrates while being simultaneously bombarded with 0.5–10.0 keV nitrogen ions. The properties of the films were studied by x-ray photoelectron spectroscopy (XPS…
First, a new approach to treat the strongly correlated conjugated-circuit model on two-dimensional networks is made with computational effort comparable to that for corresponding tight-binding models. Toward this end a translationally symmetric arrow assignment is used to construct an antisymmetrically signed ‘‘adjace…
Lanthanum-modified lead zirconate titanate specimens with between 0 and 9 at.% lanthanum and a Zr/Ti ratio of 95/5, Pb1−xLax(Zr0.95Ti0.05)1−x/4O3 (PLZT 100x/95/5), have been investigated using dielectric spectroscopy, Sawyer–Tower polarization, and dilatometric measurements. La modification was found to suppress the s…
Surface preflashover phenomena across alumina ceramics in vacuum are presented. The localized plasmas are identified by the spatially resolved images that appear in a pulse surface preflashover phase using an intensified charge-coupled-device camera, along with coordinated, time-resolved preflashover current and lumin…
The numerical modeling of the oxidation of silicon is analyzed from a nonlinear viscoelastic approach. Its mechanical and stress dependent parameters are determined for silicon dioxide and nitride. The study focuses on the rheological behavior of the materials. The two dimensional simulations of silicon cylinders oxid…
Low voltage cathodoluminescent characteristics of ZnGa2O4 phosphor grown by rf magnetron sputtering have been investigated from 300 to 700 nm. The effects of substrate heating and annealing treatment on the luminescent characteristics are also studied. A blue cathodoluminescent emission peaked at 470 nm is observed. B…