Kazuyoshi Fujio、Minoru Fujii、Kazuaki Sumida 等 6 位作者2008-07-14Applied Physics Letters
P- and/or B-doped Si nanocrystals (Si-ncs) embedded in glass matrices were studied by electron spin resonance (ESR) spectroscopy to investigate the origin of strong room-temperature photoluminescence (PL) of n- and p-type impurities codoped Si-ncs below the band-gap energy of bulk Si crystals. It was shown that the in…
Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces
S. S. Kurbanov、Г. Н. Панин、T. W. Kim 等 4 位作者2008-07-14Physical Review B
The influence of a visible ${\text{Ar}}^{+}$-laser (488 nm) illumination on photoluminescence (PL) from ZnO nanocrystals excited by He-Cd laser (325 nm) at various excitation intensities and temperatures was investigated. A reversible quenching of the UV near-band-edge emission under ${\text{Ar}}^{+}$-laser illuminati…
ZnO doping and propertiesQuantum Dots Synthesis And PropertiesGa2O3 and related materials
You Zhou、Yu‐ichi Yoshizawa、Kiyoshi Hirao 等 5 位作者2008-07-14Journal of the American Ceramic Society
Eu‐doped β‐SiAlON phosphor powders were prepared by a highly efficient combustion synthesis method. By adjusting the starting compositions and choosing appropriate reaction conditions, Si 6− z Al z O z N 8− z :Eu 2+ powders having z values ranging from 0.25 to 2.0 could be synthesized within a few minutes. Phase compo…
Luminescence Properties of Advanced MaterialsMicrowave Dielectric Ceramics SynthesisNuclear materials and radiation effects
Roberto Lo Savio、M. Miritello、A. M. Piro 等 5 位作者2008-07-14Applied Physics Letters
We report the effects of thermal annealing performed in N2 or O2 ambient at 1200°C on the structural and optical properties of Er silicate films having different compositions (Er2SiO5, Er2Si2O7, and their mixture). We demonstrate that the chemical composition of the stoichiometric films is preserved after the thermal…
Luminescence Properties of Advanced MaterialsSemiconductor materials and devicesSilicon Nanostructures and Photoluminescence
Shiming Huang、Yuchen Li、Chude Feng 等 5 位作者2008-07-14Journal of the American Ceramic Society
Sr 1− x Ca x Bi 2 Nb 2 O 9 ( x =0, 0.2, 0.4, 0.6, 0.8 and 1) ceramics were prepared by a conventional solid‐state reaction method. Their dielectric and structural properties were investigated. X‐ray diffraction analysis indicated that single‐phase layered perovskites were obtained. For Ca‐substituted specimens, a diel…
Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsMicrowave Dielectric Ceramics Synthesis
Oleg Heczko、A. V. Soroka、Simo‐Pekka Hannula2008-07-14Applied Physics Letters
The magnetic shape memory (MSM) effect was observed in Ni–Mn–Ga freestanding thin foils down to 90μm in thickness using top-down approach. The foils were prepared by thinning the bulk crystals exhibiting MSM effect. The effect was evaluated from the magnetization curves. The significant decrease in magnetic field need…
Magnetic and transport properties of perovskites and related materialsShape Memory Alloy Transformations
Chun‐Ming Wang、Jinfeng Wang、Chaoliang Mao 等 7 位作者2008-07-14Journal of the American Ceramic Society
The microstructure, and dielectric and piezoelectric properties of the CeO 2 ‐modified potassium bismuth titanate K 0.5 Bi 4.5 Ti 4 O 15 (KBT) piezoelectric ceramics were investigated. X‐ray diffraction analysis revealed that the cerium‐modified KBT ceramics have a pure four‐layer Aurivillius‐type structure. The piezo…
Ferroelectric and Piezoelectric MaterialsAcoustic Wave Resonator TechnologiesMicrowave Dielectric Ceramics Synthesis
Sophie Barrau、Fengling Zhang、Anna Herland 等 6 位作者2008-07-14Applied Physics Letters
Amyloid nanowires were incorporated in organic photovoltaic devices in order to enhance the transport properties. Amyloid fibrils act as a template for donor-acceptor materials. The current-voltage characteristics under illumination and in the dark display a maximum for the fill factor and the space charge limit curre…
Organic Electronics and PhotovoltaicsQuantum Dots Synthesis And PropertiesConducting polymers and applications
Annamaria Petrozza、Sergio Brovelli、Jasper J. Michels 等 7 位作者2008-07-14Advanced Materials
The time-resolved photoluminescence of cyclodextrin-threaded conjugated molecular wires and their unthreaded analogues is studied to probe suppression of intermolecular interactions by supramolecular encapsulation. The polyrotaxane dynamics are exponential and independent of concentration, different from those of unth…
Organic Electronics and PhotovoltaicsMolecular Junctions and NanostructuresLuminescence and Fluorescent Materials
Haiyang Xu、Yao Liang、Zhuang Liu 等 5 位作者2008-07-14Advanced Materials
Tetrapod-like ZnS1−xSex alloy nanostructures (T-ZnS1−xSex) of different compositions (0 ≤ x ≤ 1) are synthesized by chemical vapor deposition. Their composition-dependent Raman scattering and cathodoluminescence are studied. The single-crystal T-ZnS1−xSex nanostructures exhibit strong and narrow near-band-edge emissio…
ZnO doping and propertiesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films
Zhimin Li、Wancheng Zhou、Xiaolei Su 等 6 位作者2008-07-14Journal of the American Ceramic Society
Al‐doped β‐SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1 MPa nitrogen atmosphere, using polytetrafluoroethylene as the chemical activator and Al as the dopant. The β‐SiC powders produced have fine spherical particles and narrow particle size distribution. The impurity phase of Al 2 O…
Advanced ceramic materials synthesisAluminum Alloys Composites PropertiesElectromagnetic wave absorption materials
Junyan Zhang、Ping-Jian Li、Hui Sun 等 8 位作者2008-07-14Applied Physics Letters
ZnO nanowire arrays were grown on semi-insulating intrinsic GaAs substrates, and controlled arsenic-doping process was carried out to realize the n-ZnO∕p-ZnO nanowire array/GaAs structures. The constructed ZnO nanowire homojunctions demonstrated a clear rectifying behavior and the turn-on voltage was above 4.0V. The c…
ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials
Anupinder Singh、Arti Gupta、Ratnamala Chatterjee2008-07-14Applied Physics Letters
Magnetoelectric coupling coefficient (α) values of 0.88mV∕cm∕Oe at 200Oe and magnetocapacitive effects are reported in solid-solution BF–LF–PT with large La substitution (50:50 in BF). Enhancement of magnetic, dielectric, and ferroelectric properties is also observed. The solid solution shows relaxor behavior with lar…
Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsKarst Systems and Hydrogeology
Zhi‐Min Liao、Jun Xu、Jingmin Zhang 等 4 位作者2008-07-14Applied Physics Letters
Asymmetric Schottky barriers between ZnO nanowire and metal electrode have been fabricated at the two ends of the nanowire. An obvious photocurrent generated from the device at zero voltage bias can be switched on/off with quick response by controlling the light irradiation. Moreover, the device can still afford a cur…
ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials
Jong‐Won Song、Mark A. Watson、Hideo Sekino 等 4 位作者2008-07-14The Journal of Chemical Physics
Polarizabilities (alpha), second-hyperpolarizabilities (gamma), and the gamma scaling factors (c) of polyynes [H-(C[triple bond]C)(n)-H, n = 1-8] were evaluated using the long-range corrected (LC) density functional theory (DFT) and LC-DFT with a short-range Gaussian attenuation (LCgau), as well as high quality wavefu…
Advanced Chemical Physics StudiesNonlinear Optical Materials ResearchSolid-state spectroscopy and crystallography
Gion Calzaferri、Huanrong Li、Dominik Brühwiler2008-07-14Chemistry - A European Journal
Artificial photonic antenna systems have been realised by incorporating organic dyes into zeolite L. The size and aspect ratio of the cylindrically shaped zeolite crystals can be tuned over a wide range, adding to the versatility of this host material. A 600 nm sized crystal, for example, consists of about 96 000 one-…
Porphyrin and Phthalocyanine ChemistryPhotochemistry and Electron Transfer StudiesLuminescence and Fluorescent Materials
Kosuke Suzuki、Junya Iida、Sota Sato 等 5 位作者2008-07-14Angewandte Chemie International Edition
Interior design: A 5 nm sized spherical complex, which confines 24 alkyl chains in its interior, provides a localized hydrophobic environment with a uniform size and structure (see picture; shell blue, Pd yellow, O red, C purple, H gray). The hydrophobic phase can solubilize dye molecules, and the hydrophobicity of th…
Supramolecular Chemistry and ComplexesLuminescence and Fluorescent MaterialsSupramolecular Self-Assembly in Materials
B. Bayraktaroglu、Kevin Leedy、Robert F. Bedford2008-07-14Applied Physics Letters
High temperature stability of Al-doped ZnO transparent thin films in air has been improved by a combination of optimized growth parameters and postgrowth treatment. Optical transparency was better than 90% for wavelengths ranging from 380 to at least 2500nm with films that also had resistivities of 2×10−4Ωcm. Dependin…
ZnO doping and propertiesCopper-based nanomaterials and applications
Eugenia Kharlampieva、Taisia Tsukruk、Joseph M. Slocik 等 8 位作者2008-07-14Advanced Materials
A recombinant protein, silaffin rSilC, adsorbed on a tailored polyelectrolyte surface is capable of initiating the nucleation and growth of 4 nm titania nanoparticles in a dispersed manner under ambient conditions. The approach presented here may be readily applicable to other organic and inorganic materials to enable…
Quantum Dots Synthesis And PropertiesPolymer Surface Interaction StudiesDiatoms and Algae Research
Sheng Wang、Zhiyong Zhang、Li Ding 等 10 位作者2008-07-14Advanced Materials
A barrier-free bipolar diode (BFBD) and an ambipolar field-effect transistor (FET) are fabricated based on a doping-free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side-by-side on a single CNT, and can be used as an n-FET, p-FET, CMOS inverter, and…
Carbon Nanotubes in CompositesAnalog and Mixed-Signal Circuit DesignAdvancements in Semiconductor Devices and Circuit Design