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Photoluminescence in silicon powder grown by plasma-enhanced chemical-vapor deposition: Evidence of a multistep-multiphoton excitation process

P. Roura、J. Costa、G. Sardin 等 5 位作者1994-12-15Physical review. B, Condensed matter

The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemical-vapor deposition (PECVD) of silane is reported. A nonlinear dependence of PL intensity on laser power of the form I a: P" with n as high as 7 has been found, indicating a multistep-multiphoton ex­citation process. T…

Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsNonlinear Optical Materials Studies

Neutron Diffraction Study of Successive Phase Transitions in the Heisenberg Antiferromagnet MnBr2

T. Sato、Hiroaki Kadowaki、Hiroji Masuda 等 4 位作者1994-12-15Journal of the Physical Society of Japan

Neutron diffraction experiments on the Heisenberg antiferromagnet MnBr 2 were performed to study the successive magnetic phase transitions ( T N1 =2.32 K, T N2 =2.17 K). The magnetic structure in the intermediate phase is found to be a transverse sinusoidally-modulated structure with an incommensurate modulation vecto…

Magnetic and transport properties of perovskites and related materialsAdvanced Condensed Matter PhysicsSolid-state spectroscopy and crystallography

Local vibrational modes of impurities in diamond

P. J. Lin‐Chung1994-12-15Physical review. B, Condensed matter

Local vibrational modes induced by defect complexes involving nitrogen and silicon impurities in different configurations are calculated using Keating potentials in a supercell model. Both the frequency and the vibrational amplitudes of atoms in the complexes are determined for each mode. It is found that defect compl…

High-pressure geophysics and materialsDiamond and Carbon-based Materials ResearchForce Microscopy Techniques and Applications

Photoluminescence and electrical properties of erbium-doped indium oxide films prepared by rf sputtering

Hong Koo Kim、Cheng Chung Li、G. Nykolak 等 4 位作者1994-12-15Journal of Applied Physics

Erbium-doped indium oxide films were prepared by rf magnetron sputtering. The Er-doped oxide films are conducting (or semiconducting) with a resistivity in the range of 10−3–103 Ω cm, and are optically active, i.e., show a clear room-temperature photoluminescence at 1.54 μm, corresponding to intratransitions in Er3+ i…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials

X-ray observation of porous-silicon wetting

Daniel Bellet、G. Dolino1994-12-15Physical review. B, Condensed matter

High-resolution x-ray-diffraction experiments show that the lattice parameter of porous-silicon layers expands when wetted by an alcohol or an alkane. This phenomenon is nearly reversible when the alkane is removed while there is a time-dependent drift during alcohol wetting. The experimental results obtained for seve…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Polymerization in liquid phosphorus: Simulation of a phase transition

Detlef Hohl、R. Jones1994-12-15Physical review. B, Condensed matter

We have performed simulations of liquid phases of phosphorus using the molecular-dynamics--density-functional method. Starting from a system of 26 ${\mathrm{P}}_{4}$ tetrahedra in a simple cubic unit cell of constant volume, we determine radial, angular, and defect distribution functions for the molecular liquid and f…

Advanced Chemical Physics StudiesMaterial Dynamics and PropertiesThermal and Kinetic Analysis

Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy

J. J. Paggel、Wolfgang Theis、K. Horn 等 6 位作者1994-12-15Physical review. B, Condensed matter

The Si(111)-7\ifmmode\times\else\texttimes\fi{}7 reconstruction is investigated by high-resolution core-level spectroscopy. A detailed line-shape analysis of spectra recorded over a wide photon energy range demonstrates the presence of four surface-derived components in the Si 2p line. These are attributed to the stru…

Advanced Chemical Physics StudiesSpectroscopy and Quantum Chemical StudiesElectron and X-Ray Spectroscopy Techniques

Alkali-metal adsorption on dissimilar alkali-metal monolayers preadsorbed on Cu(001): Li on Na and Na on Li

Seigi Mizuno、Hiroshi Tochihara、T. Kawamura1994-12-15Physical review. B, Condensed matter

An adsorption system of metal-on-metal growth is presented. The adsorption of alkali-metal atoms on monolayers of dissimilar alkali metals preadsorbed on the Cu(001) surface has been studied by Auger-electron spectroscopy, work-function change, and low-energy electron-diffraction intensity analysis. We have examined t…

Graphene research and applicationsChemical and Physical Properties of MaterialsSurface and Thin Film Phenomena

Low-field negative magnetoresistance in the variable-range-hopping regime in copper indium diselenide

L. Essaleh、J. Galibert、S. M. Wasim 等 5 位作者1994-12-15Physical review. B, Condensed matter

Study of the temperature and magnetic-field dependence of the negative magnetoresistance in the Mott variable-range-hopping regime is made on n-type ${\mathrm{CuInSe}}_{2}$. The relative magnetoresistance \ensuremath{\Delta}\ensuremath{\rho}/\ensuremath{\rho}(0) is found to be proportional to ${\mathit{T}}^{\mathrm{\e…

Quantum Dots Synthesis And PropertiesAdvanced Condensed Matter PhysicsIron-based superconductors research

Electronic structure and relative stability of icosahedral Al–transition-metal clusters

X. G. Gong、Vijay Kumar1994-12-15Physical review. B, Condensed matter

The electronic structure and relative stability of icosahedral ${\mathrm{Al}}_{12}$M (M=transition metal) clusters have been studied using the density functional theory within the local spin density approximation. Our calculations predict large binding energies for clusters with M atom in the middle of a d series in a…

Microstructure and mechanical propertiesQuasicrystal Structures and PropertiesX-ray Diffraction in Crystallography

Valence-band energy spectrum of solid solutions of narrow-gap-semiconductorBi2−xSnxTe3single crystals

V. A. Kulbachinskiı̆、M. Inoue、Minoru Sasaki 等 9 位作者1994-12-15Physical review. B, Condensed matter

Electrical resistivities along the ${\mathit{C}}_{2}$ and ${\mathit{C}}_{3}$ axes, Hall effect, Shubnikov--de Haas effect, and pulsed-laser-induced transient thermoelectric effect (TTE) have been measured in the temperature range 4.2--300 K for solid solutions of narrow-gap p-type ${\mathrm{Bi}}_{2\mathrm{\ensuremath{…

Advanced Thermoelectric Materials and DevicesAdvanced Semiconductor Detectors and MaterialsThermography and Photoacoustic Techniques

Biexciton binding energy in CuCl quantum dots

Yasuaki Masumoto、Shinji Okamoto、Satoshi Katayanagi1994-12-15Physical review. B, Condensed matter

Induced absorption from the exciton state to the biexciton state was clearly observed under the site-selective excitation of the inhomogeneously broadened ${\mathit{Z}}_{3}$ exciton band in CuCl microcrystallites embedded in NaCl crystals. This allows us to obtain the size-dependent biexciton binding energy in CuCl qu…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films

Third-order optical nonlinearities in semiconductors: The two-band model

Claudio Aversa、J. E. Sipe、Mansoor Sheik‐Bahae 等 4 位作者1994-12-15Physical review. B, Condensed matter

We calculate the coherent electronic contributions to the third-order optical response ${\mathrm{\ensuremath{\chi}}}^{(3)}$(-\ensuremath{\omega};\ensuremath{\omega},\ensuremath{\Omega},-\ensuremath{\Omega}) of bulk semiconductors in the independent-particle approximation using a simple two-band model. The formalism us…

Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsNonlinear Optical Materials Studies

HREELS scattering mechanism from diamond surfaces

Brian D. Thoms、J. E. Butler1994-12-15Physical review. B, Condensed matter

Interpretation of high-resolution electron-energy-loss (HREEL) spectra is dependent on knowledge of the applicable selection rules and therefore on the scattering mechanism involved. HREEL spectra from hydrogen-terminated C(100) demonstrate that impact scattering is the dominant mechanism and that dipole selection rul…

High-pressure geophysics and materialsSemiconductor materials and devicesDiamond and Carbon-based Materials Research

Dielectric Relaxation and Hopping of Electrons in ErFe2O4

Naoshi Ikeda、Kay Kohn、H. Kitô 等 5 位作者1994-12-15Journal of the Physical Society of Japan

We report the frequency and the temperature dependence of the dielectric constant of polycrystalline ErFe 2 O 4-δ with different degrees of oxygen deficiency δ. A large dielectric relaxation, with the order of magnitude of 10 4 and nearly of the Debye type, is observed in the magnetically ordered states within the tem…

Multiferroics and related materialsMagnetic Properties and Synthesis of FerritesIron oxide chemistry and applications

Linear electro-optic effect based on flexoelectricity in a cholesteric with sign change of dielectric anisotropy

Per Rudquist、M. Buivydas、L. Komitov 等 4 位作者1994-12-15Journal of Applied Physics

The linear electro-optic effect in short-pitch cholesterics is based on the linear coupling of the medium with an applied electric field. It has a number of remarkable properties. The electric field causes the optic axis to tilt in a plane parallel to the surfaces of the cell glass plates, giving the same symmetry as…

Liquid Crystal Research AdvancementsVibration Control and Rheological FluidsAdvanced Materials and Mechanics

Theory of excitonic exchange splitting and optical Stokes shift in silicon nanocrystallites: Application to porous silicon

Évelyne Martin、Christophe Delerue、G. Allan 等 4 位作者1994-12-15Physical review. B, Condensed matter

Binding energies and radiative lifetimes of excitons in crystallites are calculated with respect to size and temperature by using a tight-binding configuration-interaction technique. We discuss the recent proposal that, for porous silicon, the exchange splitting could be at the origin of the peculiar behavior of the l…

Quantum Dots Synthesis And PropertiesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation

Hiroshi Kawazoe、Naoyuki Ueda、H. Un’no 等 6 位作者1994-12-15Journal of Applied Physics

Li+ implantation at room temperature of insulating thin films of polycrystalline MgIn2O4 spinel (∼1.3 μm thick) was found to generate electron carriers efficiently. Li+ ions were implanted at 80 keV to a fluence of 1×1016 cm−2 and subsequently at 160 keV to the same fluence. Some implanted films were subjected to a po…

ZnO doping and propertiesMicrowave Dielectric Ceramics SynthesisElectrical and Thermal Properties of Materials

Defect-based model for room-temperature visible photoluminescence in porous silicon

S. M. Prokes、W. E. Carlos、O. J. Glembocki1994-12-15Physical review. B, Condensed matter

Electron-spin resonance and photoluminescence (PL) experiments have been performed on porous silicon. Results indicate the presence of oxygen shallow donors of binding energy in the 0.1-eV range, which show a distinct correlation with the intensity of the red PL observed in porous silicon. It is suggested that the sha…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation

Yoshihiko Yano、Kenji Iijima、Yoshihiro Daitoh 等 8 位作者1994-12-15Journal of Applied Physics

Thin films of BaTiO3 have been epitaxially grown on Pt(001)/MgO(100) substrates by reactive evaporation. Structural and electrical properties were investigated as a function of film thickness. In situ reflection high-energy electron diffraction and cross-sectional transmission electron microscope observations have rev…

Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesElectronic and Structural Properties of Oxides