Materials Literature
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Conductive filler-polymer composite materials have been extensively investigated as conductor-insulator percolative system to achieve high dielectric constant (K). Additionally, the effective dielectric constant of conductive filler/polymer composite can be dramatically enhanced by increasing the dielectric constant o…
A simple imaging geometry in which total internal reflection in a glass prism is frustrated by the proximity of a metal surface is implemented for observation of surface plasmon resonance. At a certain angle of incidence, the total internal reflection is completely suppressed at a certain distance between the metal an…
Wafer processing induced residual stress in wafer level Cu interconnect structures can have a significant impact on reliability of Cu interconnects. In this study, a finite element analysis approach based on element birth and death technique was developed to simulate the wafer processing procedure. Residual stress in…
The state-of-the-art thermal interface materials (TIMs) for electronic cooling is briefly reviewed with an emphasis on the emerging trend of employing carbon nanotubes (CNTs) for enhanced thermal conduction across interfaces. Previous studies on CNT TIMs, however, indicated that despite the high thermal conductivities…
Sc doping enhances the B-site 1:1 cation ordering in the Pb(Mg1∕3Nb2∕3)O3 ceramic. At low doping levels, the electrical polar domains remain at the nanometer scale and the relaxor ferroelectric behavior persists. The electric field-induced relaxor to normal ferroelectric phase transition process was directly observed…
Nanostructures have been shown theoretically, and to a certain extent experimentally, to exhibit enhanced thermoelectric properties. While the use of thermoelectric devices is not widespread today, even marginal improvements in performance could lead to a revolution in small-scale energy conversion and generation and…
Designer materials: The authors propose a design strategy for a quasicrystalline material composed of discrete molecular entities. The molecular quasicrystal (see figure), which is based on a standard Penrose tiling, is energetically stable and gives rise to a 10-fold symmetric diffraction pattern. The strategy may be…
Light scattering experiment has been performed in a single crystal of 0.89Pb(Zn1∕3Nb2∕3)O3–0.11PbTiO3. The central peak (CP) spectra have been well detected with high resolution over the wide frequency region up to 150GHz. The distribution is discovered in the relaxation time associated with the CP. Moreover, it is fo…
The morphology and chemical composition of the surface of SiO2 that had been implanted with Zn ions of 60keV and annealed in two different atmospheres, i.e., oxygen gas and a vacuum, were compared. In the as-implanted state, the surface mainly consisted of SiO2 with low roughness due to radiation-induced smoothing. A…
Among the many emerging non-volatile memory technologies, chalcogenide (i.e. GeSbTe/GST) based phase change random access memory (PRAM) has shown particular promise. While accurate simulations are required for reducing programming current and enabling higher integration density, many challenges remain for improved sim…
Photoluminescence with the bandwidth of 45nm (1523–1568nm at the level of 3dB) was observed in amorphous Er2O3 films grown on quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula [J. Phys. E 16, 1214 (1983)] to determine dis…
Strain relaxation in (Ba0.60Sr0.40)TiO3 (BST) thin films on ⟨110⟩ orthorhombic NdGaO3 substrates is investigated by x-ray diffractometry. Pole figure analysis indicates a [010]BST∥[1¯10]NGO and [001]BST∥[001]NGO in-plane and [100]BST∥[100]NGO out-of-plane epitaxial relationship. The residual strains are relaxed at h∼2…
The objective of this study is to obtain experimental failure models governing solder joint failure during drop impact testing of board assemblies. A high-speed bend test was developed to perform displacement-controlled bend test of board assemblies at the high flexing frequencies of drop impact. These test frequencie…
High density well aligned vertical CNT arrays were synthesized by thermal chemical vapor deposition (CVD) method on 1 inch by 1 inch Si substrates with sputtered Ti and Si layers. They were used as a new kind of thermal interface material (TIM) for the thermal management of microelectronic packages and high brightness…
We have measured the thermal conductivity of organic molecular crystals (DMe-DCNQI) 2 Li 1- x Cu x ( x =1 and 0.75) over a wide temperature range between 4 and 250 K. The electronic contribution can be analyzed particularly below ∼80 K. A thermal hysteresis depending on the Cu concentration x has been observed between…
In this paper we propose a multiphysics simulation of Super-Resolution BD ROM disk readout. Local metallization of the thin semiconductive layer deposited on a ROM substrate comprising a monotone sequence of 100 <i>nm</i> pits has been modelized by applying a Drude nonlinearity to the optical properties of the materia…
Grain boundary sliding is often the picture that explains computer simulation results and experiments on plasticity of nanophase materials. Using atomistic computer simulations we perform a detailed study of the effects of high hydrostatic pressure on nanophase Cu plasticity and find that it can be understood in terms…
This paper discusses thin film technology based on barium titanate (BaTiO3)-epoxy polymer nanocomposites. In particular, we highlight recent developments on high capacitance, large area, thin film passives, their integration in PWB substrates and the reliability of the embedded capacitors. A variety of nanocomposite t…
A new form of gold nanobridges has been recently observed in ultrahigh-vacuum experiments, where gold atoms rearrange to build helical nanotubes, akin in some respects to carbon nanotubes. The good reproducibility of these wires and their unexpected stability allow for conductance measurements and make them promising…
The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A0,X) having acceptor binding energy of 181meV. The sample showed high TC ferromagnetism persisting up to 285K. The contribution of magnetization from Mn ion at 280K was determined to be 0.13μB∕Mn. The improved ferromagneti…