Materials Literature
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The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, ar…
ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTEpoxidation of Alkenes with Bicarbonate-Activated Hydrogen PeroxideHuirong Yao and David E. RichardsonView Author Information Center for Catalysis, Department of Chemistry University of Florida, Gainesville, Florida 32611-7200 Cite this: J. Am. Chem. Soc. 2000, 122, 13…
The structure of the title compound, C(11)H(13)NO(3), is characterized by a two-dimensional infinite network of intermolecular N-H.O and O-H.O hydrogen bonds.
The synthesis of new acrylate, methacrylate, and styrene with 4-(oxyethoxy)-4′-vinylbarbituratephenyl azobenzene chromophore are described. The monomers were well characterized (NMR, UV, and IR) for the structure. These were then homopolymerized and characterized for spectral responses and thermal properties. The stro…
A π/2 and 5π/2 twist bistable nematic liquid crystal cell is optimized in optics by a parameter space approach. The cell possesses good contrast ratio, a preferable dΔn value, a wide viewing angle, and black–white display. Three switching wave forms can be used to switch the cell between π/2 and 5π/2 twist states. Con…
In this Letter a novel passivation method for porous silicon (PS) surfaces, i.e., depositing diamond film on a PS surface by microwave plasma assisted chemical vapour deposition (MPCVD) method, is reported. The morphologies, structure and PL of CVD diamond film coated PS were characterized using scanning electron micr…
Electronic-structure calculations have been carried out for hexagonal NiS with the use of the full-potential linearized augmented plane-wave (FLAPW) method in the local-spin-density approximation + U (LSDA+ U ) approach. The U parameter is treated as an empirical parameter to improve the band structure near the Fermi…
We recently identified the phaGPp gene encoding (R)-3-hydroxydecanoyl-ACP:CoA transacylase in Pseudomonas putida, which directly links the fatty acid de novo biosynthesis and polyhydroxyalkanoate (PHA) biosynthesis. An open reading frame (ORF) of which the deduced amino acid sequence shared about 57% identity with Pha…
The magnetic and electric properties of the vanadate PrVO 3 with the GdFeO 3 -type orthorhombic structure are reported. The temperature-dependent magnetization displays an obvious irreversibility under zero-field cooling (ZFC) and field cooling (FC), and two magnetic phase-transition temperatures 20 K and 90 K, which…
Formation of a graphite monolayer and an intercalationlike compound at the surface of the La/graphite system annealed at temperatures between 180 \ifmmode^\circ\else\textdegree\fi{}C and 900 \ifmmode^\circ\else\textdegree\fi{}C was studied by C $1s$ photoemission, high-resolution electron energy loss spectroscopy as w…
We discuss low-energy electronic properties of distorted graphene sheets from a local geometric viewpoint, treating curvature and strain as perturbations of a smooth surface. This allows a unified description of the variety of deformations to which carbon nanotubes are susceptible. By using a general symmetry analysis…
A model of continuous-site distribution for gas sorption in glassy polymers is examined with sorption data of CO2 and Ar in polycarbonate. A procedure is presented for determining from a measured isotherm the number of sorption sites in a polymer, an important parameter that previously had to be assumed. With this par…
We report measurements of the temperature dependent resistivity ( T ) of a gold film 70 nm thick deposited on mica preheated to 300 °C in UHV, performed between 4 K and 300 K, and measurements of the surface topography of the same film performed with a scanning tunnelling microscope (STM). From the roughness measured…
Nitrogen incorporated amorphous carbon (a-C:N) films on silicon (111) wafer, quartz, and Ti/C substrates with nitrogen concentration up to 20 at. % are prepared by filtered arc deposition. The nitrogen concentration and area density of the films were measured by Rutherford backscattering. The electrical properties of…
A series of light emitting devices were designed and realized with a standard 2 micron CMOS technology, 1.2 micron CMOS technology and 0.8 micron Bi-CMOS integrated circuit fabrication technology. The devices operated in the reverse breakdown avalanche mode, at voltage levels of 8 - 20 V and in the current range 80 (m…
The optical band gap (Eg) of the filled tetrahedral semiconductor LiMgAs [viewed as a zinc-blende AlAs-like (MgAs)− lattice partially filled with He-like Li+ interstitials] was studied. The band gap of LiMgAs is found to be direct, with a forbidden gap of 2.29 eV at 300 K (2.38 eV at 77 K) as LiZnP predicted theoretic…
In this paper, we report the fabrication and characterization of ${\mathrm{A}\mathrm{g}/(\mathrm{B}\mathrm{a},\mathrm{S}\mathrm{r})\mathrm{TiO}}_{3}{/\mathrm{L}\mathrm{a}\mathrm{N}\mathrm{i}\mathrm{O}}_{3}{/\mathrm{L}\mathrm{a}\mathrm{A}\mathrm{l}\mathrm{O}}_{3}$ capacitors. All the films, including the top (silver) a…
Deposition of Se and GaSe on $\mathrm{Si}(111)7\ifmmode\times\else\texttimes\fi{}7$ surfaces was studied with low-energy electron diffraction, x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction to probe initial nucleation and interface structure for $\mathrm{GaSe}/\mathrm{Si}(111)$ heteroepitaxy. Ro…
An ordered monolayer is found to form at the free surface of semi-fluorinated alkane melts, F(CF 2 ) 12 (CH 2 ) n H, a few degrees above the bulk freezing point. X-ray and surface tension measurements show the monolayer to assume one of two different structures, depending on n . For n ∼ 10 the structure is fully cryst…
A comparative study of the effect of annealing in reduced oxygen pressure on the electrical transport properties of (La1−xNdx)0.7Sr0.3MnO3 (x=0, 0.25, 0.5, 0.75, and 1) epitaxial thin films and bulk materials has been carried out. The epitaxial films grown by pulsed laser ablation were in situ annealed in an oxygen at…