Materials Literature

文献浏览

按标题、摘要、年份、主题和来源检索公开元数据。结果保留作者、摘要、分类与原始来源链接。

清除
第 203068 / 205329 页 · 当前展示 4,061,341–4,061,360 / 4,106,580 条匹配结果 · 摘要仅作预览

AlAs/n-GaAs superlattice and its application to high-quality two- dimensional electron gas systems

T. Baba、Takashi Mizutani、Masaki Ogawa1986-01-15Journal of Applied Physics

A novel AlAs/n-GaAs superlattice structure, in which the GaAs midlayers are selectively doped with Si, has been designed as an electron supplying layer for two-dimensional electron gas (2DEG) systems to obtain a high sheet carrier concentration, using a simple Kronig–Penney model calculation. The optimized structure i…

Catalytic Processes in Materials ScienceGa2O3 and related materialsElectronic and Structural Properties of Oxides

The Magnetic Properties of Pseudo-Binary Compounds, Gd(Fe1-xMnx)2and Gd6(Fe1-yMny)23

Hiroyuki Nagai、Nobuya Oyama、Yoshiaki Ikami 等 5 位作者1986-01-15Journal of the Physical Society of Japan

The pseudo-binary compounds Gd(Fe 1- x Mn x ) 2 have been investigated. The crystal structures are C-15 for x ≤0.2 and x ≥0.9, X-structure for 0.4≤ x ≤0.7 and mixture (C-15 and X-structure) for x =0.3 and 0.8, respectively. The measurements of X-ray diffraction, magnetic measurement, NMR and Mössbauer effect were carr…

Magnetic and transport properties of perovskites and related materialsRare-earth and actinide compoundsMagnetic Properties of Alloys

Thermal effects on the optical spectra of Al2O3:Ti3+

Richard C. Powell、George E. Venikouas、Lin Xi 等 5 位作者1986-01-15The Journal of Chemical Physics

The results of an investigation of thermal effects on the fluorescence spectra of Ti3+ in sapphire are presented. As-grown samples synthesized by the Czochralski method were found to exhibit a fluorescence band characteristic of Ti4+. After thermal annealing this band was greatly reduced and the Ti3+ fluorescence was…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsPhase-change materials and chalcogenides

On the bonding in Fe2(CO)9

Charles W. Bauschlicher1986-01-15The Journal of Chemical Physics

The bonding in Fe2(CO)9 is analyzed using an SCF wave function for a large basis set. There is no direct Fe–Fe metal–metal bond. The bridging CO’s hold the two Fe(CO)3 fragments together by σ donation into the empty Fe–Fe dπ orbital and metal donation from the dπ* orbital into the CO 2π* orbital. The bonding of the te…

Magnetism in coordination complexesCrystallography and molecular interactionsInorganic Fluorides and Related Compounds

Practical method for full curved-wave theory analysis of experimental extended x-ray-absorption fine structure

A. G. McKale、G. S. Knapp、S.‐K. Chan1986-01-15Physical review. B, Condensed matter

Recent work has indicated that the single-scattering theory of x-ray absorption may be valid down to much closer to the edge than previously thought. It is in this region that the plane-wave approximation used in the standard extended x-ray-absorption fine structure analysis breaks down. Using a simple reformulation,…

X-ray Spectroscopy and Fluorescence AnalysisX-ray Diffraction in CrystallographyCrystallography and Radiation Phenomena

Nitrogen-carbon radiative defect at 0.746 eV in silicon

A. Dörnen、Gerhard Pensl、R. Sauer1986-01-15Physical review. B, Condensed matter

Nitrogen-doping and -implantation studies reveal a new photoluminescence spectrum in silicon with a no-phonon transition at 0.746 eV. The line exhibits $^{14}\mathrm{N}$${,}^{15}$N and $^{12}\mathrm{C}$${,}^{13}$C isotope splittings showing that single nitrogen and carbon atoms are incorporated in the defect. Zeeman m…

Silicon Nanostructures and PhotoluminescenceElectron and X-Ray Spectroscopy TechniquesGa2O3 and related materials

Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase

K.L. Bhatia、D. P. Gosain、G. Parthasarathy 等 4 位作者1986-01-15Physical review. B, Condensed matter

The electrical resistivity of layerd crystalline GeSe has been investigated up to a pressure of 100 kbar and down to liquid-nitrogen temperature by use of a Bridgman anvil device. A pressure-induced first-order phase transition has been observed in single-crystal GeSe near 6 GPa. The high-pressure phase is found to be…

Semiconductor Quantum Structures and DevicesPhase-change materials and chalcogenidesSemiconductor materials and interfaces

Magnetic Properties of Intercalation Compound: Mn1/4MX2

Yoshichika Ōnuki、K. Ina、Toshiyuki Hirai 等 4 位作者1986-01-15Journal of the Physical Society of Japan

The Mn-intercalated transition metal dichalcogenides Mn 1/4 NbS 2 and Mn 1/4 TaS 2 have been found to be easy-plane type ferromagnets from the magnetization curves, while the magnetization curve of Mn 1/4 NbSe 2 shows a spin flopping behavior, suggesting a helical spin structure along the c -axis. The valency of Mn io…

2D Materials and ApplicationsNanocluster Synthesis and ApplicationsInorganic Chemistry and Materials

Temperature dependence of the dielectric function and the interband critical points in orthorhombic GeS

S. Logothetidis、P. Lautenschlager、M. Cardona1986-01-15Physical review. B, Condensed matter

The dielectric function of orthorhombic GeS has been measured ellipsometrically in the 1.66--5.6-eV photon-energy region as a function of temperature between 84 and 500 K. The second derivatives with respect to frequency of the real and imaginary parts of the dielectric function, obtained numerically from the measured…

Photonic and Optical DevicesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides

A comparison of the one-dimensional band structures of Ni tetrabenzoporphyrin and phthalocyanine conducting polymers

Frank W. Kutzler、D. E. Ellis1986-01-15The Journal of Chemical Physics

The one-dimensional band structures of (tetrabenzoporphyrinato) Ni (II) and (phthalocyaninato) Ni (II) were calculated. The reported band structures include the effects of the stacking perturbation and of the overlap between nearest neighbors. The basis functions for the intermolecular integrals were obtained from a d…

Porphyrin and Phthalocyanine ChemistryPhotochemistry and Electron Transfer StudiesElectrochemical Analysis and Applications

Optical and electrical properties of thin silver films grown under ion bombardment

F. Parmigiani、E. Kay、T. C. Huang 等 6 位作者1986-01-15Physical review. B, Condensed matter

The structure of thin silver films, grown under varying conditions of ion bombardment, are compared by means of their measured structural, optical, and electrical properties. Both the x-ray diffraction results and the dielectric-function measurements suggested that there are voids in our films and that their volume fr…

Semiconductor materials and devicesCopper Interconnects and ReliabilitySurface and Thin Film Phenomena

Theoretical examination of the trapping of ion-implanted hydrogen in metals

S. M. Myers、Peter Nordlander、Flemming Besenbacher 等 4 位作者1986-01-15Physical review. B, Condensed matter

Theoretical analysis of the defect trapping of ion-implanted hydrogen in metals has been extended in two respects. A new transport formalism has been developed which takes account not only of the diffusion, trapping, and surface release of the hydrogen, which were included in earlier treatments, but also the diffusion…

Hydrogen embrittlement and corrosion behaviors in metalsNuclear Materials and PropertiesIon-surface interactions and analysis

Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP

Gernot S. Pomrenke、H. Ennen、W.H. Haydl1986-01-15Journal of Applied Physics

The characteristic 1.54-μm emission from the rare-earth element erbium implanted in GaAs, InP, and GaP was investigated through 10-K photoluminescence essentially as a function of anneal temperature, time, and method. The strip-heater, forming-gas, and quartz-ampoule anneal methods were utilized in the range of 400 to…

Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceElectron and X-Ray Spectroscopy Techniques

C1sexcitation studies of diamond (111). II. Unoccupied surface states

J. F. Morar、F. J. Himpsel、G. Hollinger 等 6 位作者1986-01-15Physical review. B, Condensed matter

Unoccupied electronic states at the diamond (111) surface are studied by measuring both bulk- and surface-sensitive C 1s partial-yield soft-x-ray absorption spectra. Several absorption features are observed in the bulk band gap below the 289.19-eV bulk-C 1s absorption edge. They are associated with transitions from th…

Semiconductor materials and devicesDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of Oxides

Stress in oxidized porous silicon layers

K. Barla、R. Hérino、G. Bomchil1986-01-15Journal of Applied Physics

Stress was determined in oxidized porous silicon layers using x-ray diffraction to measure the substrate curvature. Stress is always compressive and its magnitude depends on oxide quality. The maximum value is reached when the oxide obtained from porous silicon is densified by a high-temperature process and is equival…

Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsAnodic Oxide Films and Nanostructures

Noble-metal-based transparent infrared reflectors: Experiments and theoretical analyses for very thin gold films

Geoffrey B. Smith、Gunnar A. Niklasson、J. S. E. M. Svensson 等 4 位作者1986-01-15Journal of Applied Physics

Very thin gold films were prepared on glass by ion plating (IP) and by conventional evaporation (CE). Below a certain thickness—∼9 nm for IP and ∼15 nm for CE—the films comprised a metal network; above this thickness we found uniform films. Optical properties were recorded by spectrophotometry. Conspicuous near-infrar…

Thin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsOptical Coatings and Gratings

C 1sexcitation studies of diamond (111). I. Surface core levels

J. F. Morar、F. J. Himpsel、G. Hollinger 等 6 位作者1986-01-15Physical review. B, Condensed matter

By comparing the C 1s photoemission intensities from a clean diamond (111) surface to those obtained from a fluorine-covered surface, we conclude that a single (111) layer of atoms participates in the diamond 2\ifmmode\times\else\texttimes\fi{}1 surface reconstruction. The data interpretation presented does not rely o…

Semiconductor materials and devicesDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of Oxides

Instability in the infinite dimensional hard sphere fluid

W. Klein、H. L. Frisch1986-01-15The Journal of Chemical Physics

We derive equations for the single particle distribution function and the k dependent structure factor for hard sphere fluids in the infinite dimension (d=∞) limit. Consistent with an earlier prediction that hard spheres will have mean field behavior in the d→∞ limit we find a Kirkwood instability which is interpreted…

Phase Equilibria and ThermodynamicsMaterial Dynamics and PropertiesTheoretical and Computational Physics

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II. Evaluation of various signal processing methods

J.C. Balland、J. P. Zielinger、M. Tapiero 等 5 位作者1986-01-14Journal of Physics D Applied Physics

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II. Evaluation of various signal processing methods, J C Balland, J P Zielinger, M Tapiero, J G Gross, C Noguet

Semiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesIntegrated Circuits and Semiconductor Failure Analysis

Multistep Reversible Redox Systems, XLVI1)N,N′‐Dicyanoquinonediimines – A New Class of Compounds, I: Synthesis and General Properties

Alexander Aumüller、Siegfried Hünig1986-01-14Liebigs Annalen der Chemie

Abstract A new class of quinone derivatives, the dicyanodiimines 2 , 21 , and 23 , has been synthesized by the reaction of the corresponding quinones with bis(trimethylsilyl)carbondiimide ( 8 ) and titanium tetrachloride. A wide variety of substrates, even those which contain bulky groups and those which exhibit a str…

Organic and Molecular Conductors ResearchN-Heterocyclic Carbenes in Organic and Inorganic ChemistrySynthesis and Biological Evaluation