Alessandro Vincenzi、Arvind Sridhar、Martino Ruggiero 等 4 位作者2011-08-01OpenAlex
Heat removal is one of the major challenges faced in developing the new generation of high density integrated circuits. Future design technologies strongly depend on the availability of efficient means for thermal modeling and analysis. These thermal models must be also accurate and provide the most efficient level of…
Silicon Carbide Semiconductor TechnologiesAdvancements in Semiconductor Devices and Circuit DesignThermal properties of materials
V. M. Kalygina、А. N. Zarubin、Ye. P. Nayden 等 8 位作者2011-08-01Semiconductors
The effect of oxygen plasma on gallium oxide films formed by electrochemical oxidation of n-GaAs wafers with a donor concentration N d = (1–2) × 1016 cm−3 has been investigated. It is shown that the treatment in an oxygen plasma at a temperature of 50–90°C increases the concentration of β-phase crystallites, which cau…
Advanced Photocatalysis TechniquesZnO doping and propertiesGa2O3 and related materials
Zungsun Choi、Junghoon Lee、Meng Keong Lim 等 5 位作者2011-08-01Journal of Applied Physics
The electromigration lifetimes of Cu-based interconnects are strongly influenced by whether voids are present before electromigration, and by where fatal voids initially form and grow. Modeling, simulations, and comparisons with in situ experiments are used to establish criteria for void formation away from the cathod…
Electronic Packaging and Soldering TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability
Toshihiro Nakamura、Bishnu P. Tiwari、Sadao Adachi2011-08-01Japanese Journal of Applied Physics
We demonstrate that Pt/PSi composite powders can be prepared by a simple method involving the metal-assisted electroless chemical etching of Si powders. In X-ray photoelectron spectroscopy and optical measurements, Pt layers are deposited on a Si surface together with the formation of a porous structure. It is found t…
Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsSemiconductor materials and interfaces
Hui Li、Fuxing Dong、Mingwen Xiong 等 6 位作者2011-08-01Advanced Synthesis & Catalysis
Abstract A novel indium‐boron (In–B) amorphous alloy was prepared by chemical reduction of indi‐ um(III) ions [In 3+ ] with borohydride [BH 4 − ] in aqueous solution and was applied to the water‐medium Barbier‐type allylation reactions. A variety of allyl halides could be efficiently added to aldehydes or ketones in w…
Mesoporous Materials and CatalysisCatalysis for Biomass ConversionAsymmetric Hydrogenation and Catalysis
N. N. Rosanov、N. V. Vysotina、A. N. Shatsev 等 5 位作者2011-08-01Journal of Experimental and Theoretical Physics Letters
Localized structures forming in the bistable regimes in a chain of weakly coupled split ring resonators, which are the building blocks of a nonlinear magnetic metamaterial, where electric current is generated by external electromagnetic radiation, have been studied analytically and numerically. The hysteresis of the v…
Metamaterials and Metasurfaces ApplicationsLiquid Crystal Research AdvancementsAdvanced Antenna and Metasurface Technologies
Р. А. Браже、A. I. Kochaev、R. M. Meftakhutdinov2011-08-01Physics of the Solid State
The elastic moduli and propagation velocities of elastic waves in 2D supracrystalline nanoallotropes of carbon have been calculated. It has been shown that these velocities in sp 2 nanoallotropes are close to those in graphene and exceed the propagation velocities of elastic waves in single-crystal diamond by a factor…
Carbon Nanotubes in CompositesDiamond and Carbon-based Materials ResearchBoron and Carbon Nanomaterials Research
E. Salmani、A. Benyoussef、H. Ez‐Zahraouy 等 4 位作者2011-08-01Chinese Physics B
According to first-principles density functional calculations, we have investigated the magnetic properties of Mn-doped GaN with defects, Ga 1− x − y V G x Mn y N 1− z − t V N z O t with Mn substituted at Ga sites, nitrogen vacancies V N , gallium vacancies V G and oxygen substituted at nitrogen sites. The magnetic in…
ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials
David J. Singh2011-08-01Science of Advanced Materials
There is no known fundamental limit to the performance of thermoelectric materials as characterized by the dimensionless figure of merit, ZT, and in fact there has been significant recent progress in improving the performance of practical materials. Here we discuss some of the issues involved in improving ZT starting…
Advanced Thermoelectric Materials and DevicesRare-earth and actinide compoundsSolid-state spectroscopy and crystallography
Hasitha Jayatilleka、D. Diamare、M. Wojdak 等 9 位作者2011-08-01Journal of Applied Physics
Time-resolved photoluminescence measurements of silicon nanocrystals formed by ion implantation of silicon into silicon dioxide reveal multi-exponential luminescence decays. Three discrete time components are apparent in the rise and decay data, which we associate with different classes of nanocrystals. The values of…
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications
C.D. Arrieta-González、J. Porcayo-Calderón、V.M. Salinas-Bravo 等 6 位作者2011-08-01International Journal of Electrochemical Science
Potentiodynamic polarization and linear polarization resistance electrochemical techniques were used to assess the corrosion behavior of Ni20(% wt.)Cr, NiCrAl, NiCrAlY2O3, NiCrAlCoY2O3 and Cr2C3-Ni20Cr metallic coatings in simulated body fluid environment. Hank´s solution was used for simulating body fluid environment…
Corrosion Behavior and InhibitionMetal and Thin Film MechanicsHydrogen embrittlement and corrosion behaviors in metals
Daisuke Fujita2011-08-01Science and Technology of Advanced Materials
Graphene-based nano-objects such as nanotrenches, nanowires, nanobelts and nanoscale superstructures have been grown by surface segregation and precipitation on carbon-doped mono- and polycrystalline nickel substrates in ultrahigh vacuum. The dominant morphologies of the nano-objects were nanowire and nanosheet. Nucle…
Carbon Nanotubes in CompositesGraphene research and applicationsChemical and Physical Properties of Materials
Ekhard K. H. Salje、Michael A. Carpenter2011-08-01Applied Physics Letters
Cooling heterojunctions on LaAlO3 substrates or thick layers of LaAlO3 on SrTiO3 substrates below 820 K lead to a ferroelastic phase transition Pm3−m→ R3−c in LaAlO3, with extensive twinning and elastic softening. Twin boundaries add to structural disorder near the heterojunction and generate partially localized carri…
Ferroelectric and Piezoelectric MaterialsMagnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides
V. N. Bykov、T. N. Ivanova、О. Н. Королева2011-08-01Russian Metallurgy (Metally)
33 mol % Na 2 O · 67 mol % SiO 2 + x B 2 O 3 (GeO 2 ) glasses and melts with x = 0 and 20 mol % are studied by high-temperature Raman spectroscopy. The laws of formation of the anion structure of glasses and melts of borosilicate and germanate-silicate systems are shown to be different. The dominant anion groups in th…
Material Dynamics and PropertiesGlass properties and applicationsMineralogy and Gemology Studies
Changwen Zhang、Chong Han、Shishen Yan 等 4 位作者2011-08-01Europhysics Letters (EPL)
We performed first-principles calculations to study the electronic and magnetic properties of Cu-doped ZnO nanowires. It is found that the isolated Cu dopant is spin polarized with a magnetic moment of 0.56μ B and prefers to substitute for the outermost surface Zn site in ZnO NW. At a higher doping concentration, the…
ZnO doping and propertiesAdvanced Condensed Matter PhysicsCopper-based nanomaterials and applications
Ljiljana Živković、Virginie Lair、Oleg Lupan 等 5 位作者2011-08-01Acta Physica Polonica A
Electrical, optical or catalytic properties of ceria can be tuned via doping by rare earth elements. The innate properties of ceria-based materials can be further amplified by using nanostructured ceria. In this study, Sm-doped ceria (SDC) coatings were grown on the FTO glass substrate by means of cathodic deposition.…
Catalytic Processes in Materials ScienceCopper-based nanomaterials and applicationsElectronic and Structural Properties of Oxides
Kai‐Wen Huang、Shieh‐Yueh Yang、Chien‐Lin Yu 等 9 位作者2011-08-01Journal of Biomedical Nanotechnology
To achieve early-stage diagnosis, a high-sensitivity assay method is needed. As a biomarker, vascular endothelial growth factor (VEGF) has played a growing role in diagnosing and treating hepatocellular carcinoma (HCC). In this work, an immunomagnetic reduction (IMR) through bio-functionalized magnetic nanoparticles a…
Nanoparticle-Based Drug DeliveryAngiogenesis and VEGF in CancerCancer, Hypoxia, and Metabolism
Hamze Mousavi2011-08-01Communications in Theoretical Physics
The triatomic and tetratomic gas molecule adsorption effects on the electrical conductivity of graphene are investigated by the tight-binding model, Green's function method, and coherent potential approximation. We find that the electrical conductivity of graphene sheet is sensitive to the adsorption of these gases.
Carbon Nanotubes in CompositesGraphene research and applicationsThermal properties of materials
Junqi Gao、Ying Shen、Yaojin Wang 等 6 位作者2011-08-01IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
A magnetoelectric (ME) bending-mode structure based on Metglas/Pb(Zr,Ti)O(3) fiber laminates has been studied. This bending mode had a fundamental resonance (FBR) of about 210 Hz, which was much lower than that of the longitudinal mode. Near the FBR, the ME voltage coefficient was about 400 V/cm·Oe. Magnetic sensors b…
Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsMagneto-Optical Properties and Applications
L. P. Teo、M.H. Buraidah、Norlidah Alias 等 6 位作者2011-08-01Materials Research Innovations
Lithium stannate (Li2SnO3) was prepared by solution evaporation method utilising acetates of tin and lithium as starting materials. From thermogravimetric analysis, no weight loss was observed at temperatures above 800°C. The Li2SnO3 precursor was then sintered at 800°C for 5, 6, 7, 8 and 9 h, respectively. X-ray diff…
Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesElectronic and Structural Properties of Oxides