Laihui Luo、Haixia Wang、Yanxue Tang 等 7 位作者2006-01-15Journal of Applied Physics
Electric-field-induced transverse strain behavior of (1−x)Pb(Mg1∕3Nb2∕3)O3-xPbTiO3 (PMNT∕x) crystals with different cuts and compositions was investigated for using as electromechanical actuators. High transverse strain with low hysteresis was achieved for rhombohedral crystals near morphotropic phase boundary (28⩽x⩽3…
Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsAcoustic Wave Resonator Technologies
作者信息未提供2006-01-15Materials science forum
This DOI is not currently attached to any metadata records. DOIs can’t actually ever be deleted (they’re persistent), but sometimes our members create DOIs in error. We do have a process to approximate deletion which we follow only in rare cases where the DOI has been genuinely created in error, and most crucially, if…
Material Properties and ApplicationsAdvanced Theoretical and Applied Studies in Material Sciences and GeometryPolymer Science and Applications
M. Kajihara2006-01-15Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum
The temperature dependence of the kinetics of the reactive diffusion was numerically analyzed for a hypothetical binary system composed of one compound phase (β) and two primary solid solution phases (α and γ). The growth rate of the β phase during the reactive diffusion between α and γ phases in a semi-infinite diffu…
Crystallization and Solubility StudiesThermal and Kinetic AnalysisMetallurgical and Alloy Processes
P. Kruit、M. Bezuijen、J. Barth2006-01-15Journal of Applied Physics
The potential application of carbon nanotubes as electron sources in electron microscopes is analyzed. The resolution and probe current that can be obtained from a carbon nanotube emitter in a low-voltage scanning electron microscope are calculated and compared to the state of the art using Schottky electron sources.…
Carbon Nanotubes in CompositesAdvanced Electron Microscopy Techniques and ApplicationsNanopore and Nanochannel Transport Studies
Yuri Estrin、László S. Tóth、Yves Bréchet 等 4 位作者2006-01-15Materials science forum
A model describing the evolution of the misorientation angle between dislocation cells with plastic strain is proposed. The model is applied to the case of equal channel angular pressing (ECAP) of copper. In a basic version of the model, the evolution of the average misorientation angle is traced. A way of handling th…
Microstructure and mechanical propertiesMetal Forming Simulation TechniquesMetallurgy and Material Forming
Masato Kaneko、Masao Ogata2006-01-15Journal of the Physical Society of Japan
Charge ordering phenomenon in $\theta$-(BEDT-TTF)$_2$X is studied by using 1/4-filled extended Hubbard model on an anisotropic triangular lattice through mean-field approximation. It is found that a metallic charge ordered state with 3-periodicity on lattices (3-fold type charge order) is realized in the realistic par…
Organic and Molecular Conductors ResearchIron-based superconductors researchElectronic and Structural Properties of Oxides
J. Zúñiga‐Pérez、V. Muñoz‐Sanjosé、Michael Lorenz 等 7 位作者2006-01-15Journal of Applied Physics
Zn 1 − x Cd x O ( 11 2 ¯ 0 ) films have been grown on (011¯2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford…
ZnO doping and propertiesCopper-based nanomaterials and applicationsGa2O3 and related materials
Benjamin J. Broughton、M. J. Clarke、Stephen Morris 等 5 位作者2006-01-15Journal of Applied Physics
In this letter, the uniform lying helix (ULH) liquid crystal texture, required for the flexoelectro-optic effect, is polymer stabilized by the addition of a small percentage of reactive mesogen to a high-tilt-angle (ϕ>60°) bimesogenic chiral nematic host. The electro-optic response is measured for a range of re…
Liquid Crystal Research AdvancementsPhotonic Crystals and ApplicationsAdvanced Materials and Mechanics
P.G. Abramof、A.F. Beloto、A. Y. Ueta 等 4 位作者2006-01-15Journal of Applied Physics
The structure of porous silicon layers was accurately investigated by diverse x-ray methods. A series of samples with etching times varying from 1 to 10 min was produced by chemical etch using a HF∕HNO3-based solution assisted with NaNO2. The porosity determined from low-angle x-ray reflectivity spectra was found to f…
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications
Hiroaki Matsui、Hitoshi Tabata、Noriyuki Hasuike 等 4 位作者2006-01-15Journal of Applied Physics
The heteroepitaxy of Mg-rich Mg0.37Zn0.63O layers on ZnO (0001) substrates was carried out using laser molecular-beam epitaxy. Mg0.37Zn0.63O layers changed from a two-dimensional (2D) to three-dimensional growth mode at a layer thickness (tc) between 38 and 100 nm through lattice-strain relaxation. For tc>100nm…
ZnO doping and propertiesGa2O3 and related materialsElectronic and Structural Properties of Oxides
Chia Ying Lee、Tseung‐Yuen Tseng、Seu Yi Li 等 4 位作者2006-01-15Journal of Applied Physics
The photoluminescence and field-emission properties of Mg0.1Zn0.9O nanowires (MZO NWs) hydrothermally grown on the p-type silicon (100) substrates with and without phosphorus dopant were investigated in this study. Parts of MZO NWs were treated with PH3 plasma to form phosphorus-doped MZO NWs (PMZO NWs). The MZO and P…
ZnO doping and propertiesGa2O3 and related materialsElectronic and Structural Properties of Oxides
A. Cavalleri、Matteo Rini、R. W. Schoenlein2006-01-15Journal of the Physical Society of Japan
We review our work on the photo-induced insulator–metal transition in the strongly-correlated, spin-Peierls compound VO 2 . Our pump-probe experiments exploit the full spectral range of modern femtosecond science, combining time-resolved mid-IR and visible techniques with ultrafast soft x-ray absorption and hard x-ray…
Porphyrin and Phthalocyanine ChemistryTransition Metal Oxide NanomaterialsGa2O3 and related materials
V. N. Varyukhin、Yan Beygelzimer、Sergey Synkov 等 4 位作者2006-01-15Materials science forum
Twist Extrusion (TE) is a process of severe plastic deformation (SPD) being developed by us during recent 5 years. Upon this time we published few papers on mechanics of the process and influence of the TE processing on materials structure and properties. Here we reported some results on application of the twist extru…
Microstructure and mechanical propertiesMetal Forming Simulation TechniquesMetallurgy and Material Forming
Shin‐ya Koshihara、Shin‐ichi Adachi2006-01-15Journal of the Physical Society of Japan
The search for materials that show a phase transition triggered by weak external stimulation of light is an important and attractive target for photonic and materials science. We review experimental evidence indicating that photo-injected local excitation can really trigger an electron–lattice coupled cooperative phen…
Magnetism in coordination complexesPhotochemistry and Electron Transfer StudiesOrganic and Molecular Conductors Research
Koichi Nakashima、Michio Suzuki、Y. Futamura 等 5 位作者2006-01-15Materials science forum
The limit of dislocation density was investigated by means of mechanical milling (MM) treatment of an iron powder. Mechanical milling enabled an ultimate severe deformation of iron powder particles and dislocation density in the MM iron powder showed the clear saturation at around the value of 1016m-2. On the other ha…
Microstructure and mechanical propertiesMicrostructure and Mechanical Properties of SteelsPowder Metallurgy Techniques and Materials
S. Iwai、Hiroshi Okamoto2006-01-15Journal of the Physical Society of Japan
One-dimensional (1D) correlated electron systems are good targets for the exploration of photoinduced phase transitions (PIPTs). This is because photocarrier generations and/or charge transfer (CT) excitations by lights can stimulate instabilities inherent to the 1D nature of electronic states through strong electron–…
Perovskite Materials and ApplicationsMagnetism in coordination complexesOrganic and Molecular Conductors Research
D. Comedi、O. H. Y. Zalloum、E. Irving 等 7 位作者2006-01-15Journal of Applied Physics
The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray diffraction. SRSO samples with Si concentrations (y) of 0.40, 0.42, and 0.45 were grown by inductively coupled plasma-enhanced chemical-vapor deposition…
Semiconductor materials and devicesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence
Hisao Satoh、Kentaro Sugawara、Keiji Tanaka2006-01-15Journal of Applied Physics
Nanoscale amorphous marks have been produced in crystalline Ge2Sb2Te5 films using an atomic-force microscope (AFM) and a scanning-tunneling microscope (STM) through electrical phase changes. Voltage pulses with duration of 5–100 ns applied by metal probes of the AFM and the STM can produce, respectively, high-resistan…
Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesNonlinear Optical Materials Studies
Zhijun Hu、Heinz von Seggern2006-01-15Journal of Applied Physics
The buildup of air-breakdown-induced polarization in a one-side-metallized three-layer sandwich structure consisting of fluorinated ethylene propylene copolymer (FEP) / expanded polytetrafluoroethylene (ePTFE) / FEP has been studied utilizing a corona triode for voltage application. The FEP layers form structurally an…
Advanced Sensor and Energy Harvesting MaterialsHigh voltage insulation and dielectric phenomenaDielectric materials and actuators
Haiping He、Fei Zhuge、Zehao Ye 等 7 位作者2006-01-15Journal of Applied Physics
The dependence of lattice strain in Al-N codoped p-type ZnO films on Al content and growth temperature was investigated. With increasing Al content, the compressive strain in the film first increases and then decreases. We suggest that the strain decrease is due to the occupation of more substitutional sites by Al at…
ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials