Materials Literature
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The relationship between abrasive particle size and polishing rate (PR) of a chemical mechanical polishing (CMP) process is studied both experimentally and theoretically. PR of NiP-plated aluminum substrates polished by spherical silica particles of a uniform size becomes the maximum around at 50nm in particle size. A…
This paper presents an arbitration mechanism to balance bandwidth consumption or data throughputs between packets in a network-on-chip (NoC) with ID-based wormhole cut-through switching method. When data traffic flowing through a network communication link is high, the bandwidth space of the link, which is comsumed by…
We perform magnetoresistance (MR) measurements to experimentally track magnetic domain wall pinning/depinning process in L-shaped Permalloy (Py) nanostructures with widths in the range 50-400 nm. We demonstrate that the field interval between the pinning/depinning events increases with the reduction of the nanowire wi…
We investigated spin signals for Co2Fe(Al,Si)/n-GaAs Shottoky tunnel junctions by three terminal (3T) Hanle and four terminal (4T) non-local measurements. The ordering structure and magnetic moment increased with TCFASup to 300 °C. The spin signals for Co2Fe(Al,Si)/n-GaAs Shottky tunnel junctions were clearly observed…
The transport of water and ions through carbon nanotubes (CNTs) is crucial in nanotechnology and biotechnology. Previous investigation indicated that the ions can hardly pass through (6,6) CNTs due to their hydrated shells. In the present study, utilizing molecular dynamics simulation, it is shown that the energy barr…
The advantages of InGaN/GaN light emitting diodes (LEDs) with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decreased due to the re…
A facile sono-thermal approach using inexpensive and non-toxic chemicals was applied for the large-scale synthesis of iron nitride/iron (Fe 4 N/Fe) nanocomposite. The as-synthesized iron oxide (Fe 3 O 4 ) nanoparticles by sonochemical method were treated in a thermal annealing chamber in presence of hydrogen (H 2 ) an…
This paper describes a new approach to designing ERDPF control system. Contrary to the previous system, which used the high performance relay for switching the regeneration current, the new solution uses only semiconductor electronic parts. The ERDPF filter is designed to meet the requirements of the EURO 6 emission s…
In the rolling process, the upper and lower working rolls of the mill usually under different load. In order to keep good product quality, load balance control is necessary. This paper proposes a control method which uses the torque difference between upper and lower roll to compensate the given current of the upper r…
A model describing long-wave dimensional perturbations in a liquid film is developed that takes into account the presence of shear stress on the interfacial surface. This model is based on the decomposition of the liquid velocity vector components in a series in linearly independent basis functions (harmonics) and doe…
The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10 –2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions f…
Semiconductors showing high efficient photocatalytic activity have attracted great interest, because they provide a potential solution to many environmental pollution problems that humankind is currently facing. This work reports on the sol-gel synthesis of Na2Ta4O11 nanocrystals and its photocatalytic performance tow…
Adv. Energy Mater. 2014, 4, 1301575 The labelled units on the depth axes of Figure 2 in the originally published article were shown as mm, but should instead be labelled as μm. The authors apologize for any inconvenience this may have caused.
Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is n…
Abstract Magnetic current imaging (MCI) using superconducting quantum interference device (SQUID) and giant-magnetoresistive (GMR) sensors is an effective method for localizing defects and current paths [1]. The spatial resolution (and sensitivity) of MCI is improved significantly when the sensor is as close as possib…
Bi2WO6/ZnFe2O4integrated particles prepared by a facile two-step thermosynthesis possess large specific surface area and fair response to visible light so as to perform maximally photocatalytic decomposition toward rhodamine B under visible light irradiation. The morphology of the composite is influenced by pH value o…
Tensile-strained Ge/SiGe multiple quantum wells (MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n + -Si (001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the…
Structure, magnetic properties, and magnetoimpedance (MI) of the nanocrystalline Fe73.5-xCrxSi13.5B9Nb3Cu1(x = 0%, 1%, 2%, 3%, and 5%) ribbons produced by rapid quenching after thermal annealing at 520 °C for 2 h were investigated with the aim to produce materials with different functional possibilities. It was shown…
Three samples of γ-Al 2 O 3 with different textural characteristics have been synthesized from AlOOH powders (Sasol). Ni(Co)Mo/Al 2 O 3 catalysts have been prepared by single impregnation of the γ-Al 2 O 3 samples with solutions of active ingredients. The morphology of the active phase of the sulfided samples has been…
In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/Cd0.9Mg0.1Se and Cd0.9Mg0.1Se/Cd0.85Mg0.15Se quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission e…