Materials Literature
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The interfacial properties of the Co2FeAl0.5Si0.5/MgO based magnetic tunnel junction have been investigated using x ray absorption spectroscopy (XAS), angle resolved x ray photoelectron spectroscopy (ARXPS), x ray magnetic circular dichroism (XMCD), and element-specific hysteresis loops. The XAS demonstrates a multipl…
A 17 nm thick PbTiO3 (PTO) films were fabricated via PbO gas phase reaction with TiO2 starting layer in a sputtering chamber. The influence of deposition temperature of TiO2 on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of…
Photocurrent system of the ferroelectric nanocylinder (FNC), including nanodisks, nanorods, and nanowires, sandwiched between metal electrodes with the short-circuit boundary conditions has been designed and investigated. Taking into account the polarization charge screening in the electrodes and near-surface inhomoge…
Fourier transform techniques are particularly suitable for modelling woven fabrics with periodic structures. These techniques allow us to analyse the periodicity and the directionality of repeated elements. In fact, while passing through the Fourier spectrum, each periodic element is characterised by a peak whose valu…
In ceramics of KTaO3 doped with 3 at. % of Mn the dielectric response is dominated by the polydispersive behavior of Mn2+ centered polar regions, whereas the magnetic and magnetoelectric (ME) behaviors reflect an intimate coupling between A-site substituted Mn2+ ions and minute amounts of Mn3O4 precipitates mediated b…
Material grown by room temperature electron beam induced deposition (EBID) using (CH3)3CH3C5H4Pt precursor consists of platinum nanocrystals embedded in an amorphous matrix. The crystallites are shown to intermix with the amorphous oxide on a Si substrate. The extent of intermixing scales with the electron energy dens…
We report the structure and physical properties of novel nanocarbon hybrids of single-walled carbon nanotubes (SWCNT) and ultradispersed diamond (UDD) forming truly tetragonal-trigonal nanocomposite ensemble with and without gamma irradiation. They were subjected to 50, 100, and 103 kGy doses and were characterized us…
The stress evolution model (SEM) of Korhonenet al., is used to calculate the void nucleation time in a large number of short interconnects (lengths up to 50 μm). Finite element calculations show that the effect of the nonlinearity in the SEM model is small, and that a mesh size of the order of the grain size is quite…
The crystal orientations and electrical properties of Bi4Ti3O12 (BIT) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were studied and compared. Stoichiometric BIT and BLT samples were deposited on Pt(111) substrates and crystallized at 750 °C to get mixed orientations. The BIT sample exhibited a/b axes orientat…
The electrical transport properties of LaFe1− x Ni x O3 (0.1 ≤ x ≤ 0.6) bulk samples were investigated over a wide temperature range, i.e. 9–300 K. Powder x-ray diffraction patterns at room temperature showed that all samples were formed in a single phase. However, a structural transformation was observed from orthorh…
Polycrystalline Fe3O4 films were deposited on the p-Si wafers using reactive sputtering to form the polycrystalline Fe3O4/p-Si heterostructures. A rectifying behavior was observed in the polycrystalline Fe3O4/p-Si heterostructures due to the formation of p-n junction between Fe3O4 and p-Si. The metal-insulator transit…
Intergrowth BaBi2Nb2O9–Bi4Ti3O12 (BaBi6Ti3Nb2O21) Aurivillius phase ceramic has been found to be a relaxor ferroelectric (RFE) with the highest reported temperature of the maximum of the dielectric permittivity (Tm) of all of the known RFE systems. Dielectric characterization revealed that it has two dielectric anomal…
Moderate-pressure conditions of 2 GPa has been used to stabilize the complex perovskite CeCu3Mn4O12. It can be considered as a derivative of the parent CaCu3Mn4O12 compound, by full replacement of Ca by Ce cations. The electronic injection leads to a very substantial increment of the ferromagnetic TC, up to 395 K. Thi…
The atomistic structure of the graphene buffer layer on Si-terminated SiC is investigated using a modified version of the environment-dependent interatomic potential. The determination of the equilibrium state by the conjuguate gradients method suffers from a complex multiple-minima energy surface. The initial configu…
The thickness dependence of cadmium telluride/cadmium selenide (CdTe/CdSe) heterojunctions is studied in order to maximize the performance of solar cells. The best overall performance of 3.02% efficiency at air mass 1.5 was achieved from a device with 300 nanometers (nm) of sintered CdTe and 100 nm CdSe, using indium…
The dependence of the electrical properties of Ge2Sb2Te5 on nitrogen doping concentration was investigated, which was explained based on the trends in the materials properties of nitrogen-doped Ge2Sb2Te5. The effect of nitrogen doping in Ge2Sb2Te5 on the crystallization temperature and changes upon annealing with vari…
This work reports a first-principles study of copper adhesion on Ta(110) and Ru(0001) surface with the density functional theory. Adsorption energy, electron density difference, and geometrical structures of Cu on pure, oxygen, and nitrogen doped Ta(110), Ru(0001) surfaces, and Ru doped Ta(110) surface were investigat…
Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO3 surfaces with Ar+ ions. Con…
Polycrystalline Ba(Ti0.85Sn0.15)O3/Bi1.5Zn1.0Nb1.5O7 (BTS/BZN) heterostructure thin films were deposited on LaNiO3/SiO2/Si substrates by pulsed laser deposition. The leakage mechanisms of the BTS/BZN heterostructure thin films were studied in the temperature range from 303 to 403 K. At a high electric field (>1…
Characteristic voltage oscillation phenomenon is observed in an organic conductor α-[bis(ethylenedithio)tetrathiafulvalene]2I3, in the nonlinear conductivity region below the metal-insulator transition at 135 K. The oscillation, which is clearly visible in the wave form, appears only when the current is applied in the…