Zhiyong Yang、Gao Tang、Lan Luo 等 4 位作者2006-09-25Applied Physics Letters
Near-infrared luminescence properties of Sm3+ in Ge–Ga–Se and GeSe2–Ga2Se3–CsI glasses were studied and the local environments of Sm3+ were investigated. Strong 1.24 and 1.49μm fluorescence bands with respective bandwidths of 48 and 60nm were observed. About 540μs fluorescence lifetimes were obtained for the two emiss…
Luminescence Properties of Advanced MaterialsGlass properties and applicationsPhase-change materials and chalcogenides
Liqin Yan、Jiefang Li、Carlos Suchicital 等 4 位作者2006-09-25Applied Physics Letters
The authors report the structural, ferroelectric, and ferromagnetic properties of Pb(Fe1∕2Nb1∕2)O3 epitaxial thin layers grown on (001), (110), and (111) SrTiO3 substrates by pulsed-laser deposition; films were of sufficient resistivity to enable high-field P-E measurements. Findings are as follows: epitaxial strain r…
Ferroelectric and Piezoelectric MaterialsMagnetic and transport properties of perovskites and related materialsMultiferroics and related materials
Wangyang Fu、Lingzhu Cao、Shufang Wang 等 7 位作者2006-09-25Applied Physics Letters
Bi 1.5 Zn 1.0 Nb 1.5 O 7 ∕ Mn -doped Ba0.6Sr0.4TiO3 heterolayered films have been deposited on (111) Nb:SrTiO3 substrate by pulsed laser deposition. The heterolayered films were found to possess a medium permittivity around 200, a low loss tangent of 0.0025, and a relatively high tunability up to 25% measured with dc…
Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsMicrowave Dielectric Ceramics Synthesis
R. J. O. Mossanek、M. Abbate2006-09-25Physical Review B
We studied the changes in the electronic structure of $\mathrm{V}{\mathrm{O}}_{2}$ across the metal-insulator transition. The main technique was cluster model calculations with nonlocal screening channels. The calculation included a screening from a coherent state at the Fermi level in the metallic phase, and a screen…
Gas Sensing Nanomaterials and SensorsTransition Metal Oxide NanomaterialsCatalysis and Oxidation Reactions
Ekhard K. H. Salje2006-09-25Applied Physics Letters
The bulk modulus and the shear modulus of zircon soften by ca. 50% when zircon is amorphized by radiation damage. A theoretical description of the experimental findings is presented which shows that the elastic response on a zircon ceramics with radiation damage follows Hashin-Shtrikman [J. Mech. Phys. Solids 11, 127…
Geological and Geochemical AnalysisRock Mechanics and ModelingNuclear materials and radiation effects
Patrick E. Hopkins、Pamela M. Norris2006-09-25Applied Physics Letters
With continued size reduction in microelectronic devices, the boundary conductance between two materials becomes the main channel for thermal dissipation. While many efforts have been directed in studying this interfacial transport, these works have focused on the materials forming the boundary, not the boundary itsel…
Advanced Thermoelectric Materials and DevicesAdvancements in Semiconductor Devices and Circuit DesignThermal properties of materials
John Arnold、Fergal J. O’Brien、Melanie L. Moody2006-09-25Polymer Engineering and Science
Abstract Woven polypropylene fabrics are widely used, for example, in sacks for transportation of bulk materials in agriculture and construction. There are several important end‐of‐life issues with these and at present the majority of these sacks are landfilled in the UK. A new process has been developed to convert th…
Polymer crystallization and propertiesNatural Fiber Reinforced CompositesFiber-reinforced polymer composites
E. A. Bagaev、К. С. Журавлев、L. L. Sveshnikova2006-09-25Semiconductors
The photoluminescence of the CdS nanoclusters formed in the matrix of a Langmuir-Blodgett film is studied in the temperature range 5–300 K. At the temperature 5 K, the photoluminescence spectrum of the nanocrystals consists of two bands, with peaks at 2.95 and 2.30 eV. The temperature dependence of the position of the…
Gold and Silver Nanoparticles Synthesis and ApplicationsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films
Varatharajan Anbusathaiah、V. Nagarajan、S. Aggarwal2006-09-25Applied Physics Letters
High-resolution piezoresponse force microscopy is used to visualize imprint in polycrystalline PbZr0.25Ti0.75O3 thin films. Three-dimensional domain images show the formation of a thin bright band (∼8nm in width) running along the grain boundary after local application of a negative bias. Such bands extend completely…
Ferroelectric and Piezoelectric MaterialsMetal and Thin Film MechanicsAcoustic Wave Resonator Technologies
Stefano Borini、Luca Boarino、Giampiero Amato2006-09-25Applied Physics Letters
The resistivity of (100)-oriented mesoporous silicon has been studied using two different electrode configurations. The authors observed that the electronic transport along the longitudinal direction (parallel to the sample surface) is strongly inhibited at room temperature but not along the perpendicular direction. T…
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications
I. V. Antonova、M.B. Gulyaev、Z. Sh. Yanovitskaya 等 8 位作者2006-09-25Semiconductors
The photoluminescence and electrical properties are compared for silicon-oxide layers containing Si nanocrystals and having different Si content. The oxide was deposited by co-sputtering of silicon dioxide and silicon with the subsequent annealing for the formation of nanocrystals. Excess Si content in the layer varie…
Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsIon-surface interactions and analysis
Ya-Ling Kuo、Jenn‐Ming Wu2006-09-25Applied Physics Letters
The effect of substitution of niobium for zirconium on tunable behavior of lead barium zirconate (PBZ) films was investigated. Lead barium zirconate niobate films were grown on Pt∕Ti∕SiO2∕Si substrates using chemical solution deposition method. The substitution of Nb for Zr enhances tunable properties of PBZ films. Th…
Ferroelectric and Piezoelectric MaterialsMicrowave Dielectric Ceramics SynthesisElectronic and Structural Properties of Oxides
Y. L. Soo、W. H. Sun、S. C. Weng 等 8 位作者2006-09-25Applied Physics Letters
Local environments surrounding Cd and S in CdS:O thin films have been determined using extended x-ray absorption fine structure (EXAFS) and near-edge x-ray absorption fine structure (NEXAFS). As indicated by the Cd EXAFS, Cd atoms remain predominantly bonded with S. The S EXAFS and NEXAFS clearly demonstrate the prese…
Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsSemiconductor materials and interfaces
Daria Riabinina、Mohamed Chaker、Federico Rosei2006-09-25Applied Physics Letters
The porosity of Ge films deposited by pulsed laser deposition in an inert gas atmosphere is observed to be directly correlated with the kinetic energy of ablated species. The deposition conditions were modified by varying the pressure and the target-substrate distance. The evolution of the kinetic energy of ablated sp…
Semiconductor materials and devicesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence
Tatiana G. Volova、Michail I. Gladyshev、M. Yu. Trusova 等 4 位作者2006-09-25Microbiology
The degradation dynamics of polyhydroxyalkanoates of different composition has been studied in an eutrophic storage reservoir for two seasons. It has been shown that the biodegradation of polymers under natural conditions depends not only on their structure and physicochemical properties but also, to a great extent, o…
biodegradable polymer synthesis and propertiesMicroplastics and Plastic PollutionAntimicrobial agents and applications
Gianpiero Buscarino、S. Agnello、F. M. Gelardi2006-09-25Physical Review Letters
We report a study by electron paramagnetic resonance on the $E^{\ensuremath{'}}{}_{\ensuremath{\alpha}}$ point defect in amorphous silicon dioxide ($a\mathrm{\text{\ensuremath{-}}}{\mathrm{SiO}}_{2}$). Our experiments were performed on $\ensuremath{\gamma}$-ray irradiated oxygen-deficient materials and pointed out tha…
Luminescence Properties of Advanced MaterialsGlass properties and applicationsThin-Film Transistor Technologies
Koichi Kajihara、Linards Skuja、Masahiro Hirano 等 4 位作者2006-09-25Physical Review B
We quantitatively studied the formation, diffusion, and reactions of mobile interstitial hydrogen atoms $({\mathrm{H}}^{0})$ and molecules $({\mathrm{H}}_{2})$ in ${\mathrm{F}}_{2}$-laser-irradiated silica $(\mathrm{Si}{\mathrm{O}}_{2})$ glass between 10 and $330\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Two key techniqu…
Semiconductor materials and devicesGlass properties and applicationsLaser Material Processing Techniques
Kanishka Biswas、Kripasindhu Sardar、C. N. R. Rao2006-09-25Applied Physics Letters
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4–18nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350°C in all the preparations. The nanocrystals so prepared e…
ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials
Amir Msakni、P. Chaumont、Philippe Cassagnau2006-09-25Polymer Engineering and Science
Abstract The crosslinking process of ethylene–octene copolymers by dicumyl peroxide (DCP) has been studied under static and dynamic conditions. Under static conditions, our results (gel time, insoluble fraction, and equilibrium modulus) qualitatively agree with the theories on the prediction of properties of random cr…
Polymer crystallization and propertiesAdvanced Polymer Synthesis and CharacterizationDendrimers and Hyperbranched Polymers
Jun Xu、Jianfeng Xia、Jun Wang 等 5 位作者2006-09-25Applied Physics Letters
Cd Se ∕ Zn S core/shell quantum dots (QDs) were filled into porous alumina membranes (PAMs) by dip coating. The deposition of QDs induced changes in the refractive index of the PAMs. The amount of absorbed QDs was quantified by fitting the reflection and transmission spectra observed experimentally with one side open…
Quantum Dots Synthesis And PropertiesSilicon Nanostructures and PhotoluminescenceAnodic Oxide Films and Nanostructures