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Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Noriaki Toyoda、Akihiro Fujimoto、Isao Yamada2013-06-01Japanese Journal of Applied Physics

Irradiation effects of gas cluster ion beam (GCIB) were studied on Co3Fe7 films as a novel etching process. Etching depth of Co3Fe7 increased with increasing the acceleration voltage (V a) and the ionization electron voltage (V e), however, there is a tradeoff between etching rate and the surface roughness. Because mu…

Diamond and Carbon-based Materials ResearchIon-surface interactions and analysisAdvanced Materials Characterization Techniques

Continuous monitoring of power transformer solid insulation dry-out process — Application of dielectric frequency response

Diego M. Robalino、Peter Werelius2013-06-01OpenAlex

Power and distribution transformers are some of the most important components of the energy system, and the aging of these devices during normal operation is inevitable. From the beginning of the manufacturing process, a strict control over the quality of materials used for the construction and assembly of transformer…

High voltage insulation and dielectric phenomenaLightning and Electromagnetic PhenomenaPower Transformer Diagnostics and Insulation

Effect of Pre-Polymerization Conditions on the Performance of UF/Low Melting Point Paraffin Microcapsules

Chang Zheng Xin、Li Na Wang、Xian Gan Huang 等 4 位作者2013-06-01Applied Mechanics and Materials

The reaction mole ratio of monomers, pH value, reaction temperature and time factors directly affect the properties of urea-formaldehyde resin (UF)/low melting point paraffin wax microcapsules during in situ polymerization process. The effects of these factors on the thermal storage capacity, particle size and distrib…

Polymer composites and self-healingPhase Change Materials ResearchEpoxy Resin Curing Processes

Theoretical Calculation of Electronic Structure and Chemical Bonding in Tetragonal Phase KNbO3

Xin Wu、Wei Xiong2013-06-01Advanced materials research

Electronic structure and chemical bonding in tetragonal KNbO3 have been studied by first-principles calculations. The band gap is indirect and a value of 1.64 eV was determined. Chemical bonding feature shows that a significant hybridization between Nb 4d and O 2p states. The bonding between K and NbO3 is mainly ionic…

Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesElectronic and Structural Properties of Oxides

Design and realization of a voltage detector based on current comparison in a 40nm technology

Shiying Wu、W. B. Chen、Ning Ning 等 6 位作者2013-06-01OpenAlex

A design of low-power voltage detector (VD) based on current comparison technology is presented. This VD samples the power supply voltage and converts the sampled voltage to a current which will be compared with a reference. The current comparison technology simplifies the design without use of the resistor string and…

High voltage insulation and dielectric phenomenaCCD and CMOS Imaging SensorsElectrostatic Discharge in Electronics

Characterization of contacts produced using a laser ablation/inkjet one step interconnect process for thin film photovoltaics

Piotr M. Kamiński、Ali Abbas、Jake W. Bowers 等 8 位作者2013-06-01OpenAlex

A new laser ablation/inkjet process has been developed for the interconnect of thin film photovoltaic modules. This process involves laser ablation and inkjet printing of insulator and conductor materials carried out with high precision. Any error will compromise the device efficiency by increasing the series resistan…

Silicon and Solar Cell TechnologiesElectron and X-Ray Spectroscopy TechniquesSurface Roughness and Optical Measurements

Pore-sealing process initiated by self-assembled layer for extreme low-k SiOCH (k=2.0)

Akiko Kobayashi、Dai Ishikawa、Kiyohiro Matsushita 等 4 位作者2013-06-01OpenAlex

A pore sealing process by Plasma-enhanced ALD (PEALD) with an amino-silane precursor has been developed, which enabled simultaneous restoration and pore-sealing film formation on damaged low-k film with k = 2.0. The precursor adsorbed preferentially at OR termination on the low-k surface to form self-assembled (SA) Si…

Metal and Thin Film MechanicsSemiconductor materials and devicesCopper Interconnects and Reliability

SU-E-T-56: Characterization of OSLDs for Use in Small Field Photon Beam Dosimetry

Christopher Pham、P Alvarez、Stephen F. Kry 等 6 位作者2013-06-01Medical Physics

Purpose: Use optically stimulated luminescent dosimeters (OSLD) whose visible active luminescent area were masked as a remote audit tool to measure small field photon doses down to a 7.5mm diameter field size. Methods: Different aperture mask sizes (1, 2, and 3mm) were made for the OSLD nanodots and tested to determin…

Luminescence Properties of Advanced MaterialsAdvanced Radiotherapy TechniquesRadiation Detection and Scintillator Technologies

Organic solar cell by using vertically aligned nanostructured ZnO nanorods

Arun D. Rao、Suresh Karalatti、Tiju Thomas 等 4 位作者2013-06-01OpenAlex

A low temperature solution approach was employed to grow zinc oxide (ZnO) nanorods with various aspect ratios. Va r i o u s sizes (diameter-10-25nm) of the nanorods were grown by changing the concentrations of the growth solution. The length (50nm-500nm) of nanorods was controlled using growth times. These one-dimensi…

Organic Electronics and PhotovoltaicsPerovskite Materials and ApplicationsConducting polymers and applications

Dynamics of ultrashort pulse propagation in the multilayer graphene-boron nitride system

A. V. Pak、М. Б. Белоненко2013-06-01Physics of the Solid State

The propagation of an ultrashort optical pulse in a multilayer structure formed by alternating graphene and boron nitride layers has been considered. Conduction electrons of this system have been described within the long-wavelength effective Hamiltonian in the case of low temperatures, and the electromagnetic field h…

Graphene research and applicationsDiamond and Carbon-based Materials ResearchBoron and Carbon Nanomaterials Research

Growth and characterization of close-spaced sublimation zinc phosphide thin films

Alex Cimaroli、Naba R. Paudel、Yanfa Yan2013-06-01OpenAlex

Zinc phosphide (Zn3P2) thin films (~10 μm) have been grown by close-spaced sublimation. The electrical, optical, and crystallographic properties of the synthesized Zn3P2are measured. The as-grown films exhibit hole carrier concentrations of about 1016holes/cm3, resistivity on the order of 102Ohm·cm, and large grain si…

ZnO doping and propertiesAcoustic Wave Resonator TechnologiesNanowire Synthesis and Applications

Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell

Emil Pinčík、Hikaru Kobayashi、Masao Takahashi 等 5 位作者2013-06-01Journal of the Chinese Advanced Materials Society

Dominant aim of the contribution is focused on investigation of very thin SiO2/a-Si:H interface properties. After PECVD deposition, surface of a-Si:H is not covered by reproducibly defined insulating layer. Therefore, three basic types of oxygen plasma sources were used for treatments of a-Si:H surfaces. Electrically…

Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Two-dimensional electron gas generated by La-doping at SrTiO3(001) surface: A first-principles study

Yun Li、Jaejun Yu2013-06-01AIP Advances

We carried out first-principles calculations to study the electronic properties of SrO-terminated and TiO2-terminated SrTiO3(001) surfaces with La-doping at the surface. We find that an intrinsic lower-lying state at the SrO-terminated surface can accommodate a two-dimensional electron gas (2DEG). By introducing La-do…

Semiconductor materials and devicesMagnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides

The ITER EC-H&CD Upper Launcher: FEM analyses of the blanket shield module with respect to surface and nuclear heat loads

A. Vaccaro、G. Aiello、G. Grossetti 等 10 位作者2013-06-01OpenAlex

In the frame of the new grant signed in November 2011 between Fusion for Energy (F4E) and the ECHUL-CA consortium, the development process of the Electron Cyclotron Heating and Current Drive (EC H&CD) Upper Launcher (UL) in ITER has moved a step towards the final design phase. The Blanket Shield Module (BSM) is a plas…

Laser-Plasma Interactions and DiagnosticsFusion materials and technologiesSuperconducting Materials and Applications

Resonant cavity-enhanced quantum-dot infrared photodetectors with guided-mode resonance reflector

Chi-Cheng Wang、Sheng-Di Lin2013-06-01OpenAlex

We propose a resonant cavity-enhanced quantum-dot infrared photodetectors with a top mirror of Ge/SiO2sub-wavelength grating. With a total thickness of ~7.7 μm, the simulated maximum absorption is ~60-70% at 8 μm with an enhancement factor of ~6-20.

Photonic and Optical DevicesPhotonic Crystals and ApplicationsOptical Coatings and Gratings

Analysis of the microstructure of silicon quantum dot superlattice embedded microcrystalline silicon carbide for solar cell application

Partha Chaudhuri、Arindam Kole、Golam Haider2013-06-01OpenAlex

We have recently demonstrated [1] p-i-n structure diodes with the intrinsic (i) layers comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon carbide and silicon rich microcrystalline silicon carbide layers by rf (13.56 MHz) plasma enhanced chemical vapour deposition method. The rf…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications

Photo-stimulated discharge of polyethylene charged under DC electric field or electron beam irradiation

Peng Ma、Yewen Zhang、Feihu Zheng 等 4 位作者2013-06-01OpenAlex

The distribution of charge trap depth in liner low density polyethylene (LLDPE) charged either under the DC electric field of 50kV/mm or by 20 KeV electron beam irradiation was studied by photo-stimulated discharge (PSD) method. The photo-stimulated discharge spectra were recorded with the scanning wavelength from 500…

High voltage insulation and dielectric phenomenaDielectric materials and actuatorsElectrostatic Discharge in Electronics

Generation IV SFR nuclear reactors: under-sodium repair for ASTRID

François Baqué、Christophe Chagnot、L. Bruguiere 等 6 位作者2013-06-01OpenAlex

For non-removable components of the future ASTRID prototype, repair operations will be performed in a gas environment. If the faulty area is located under the sodium free level, the gas-tight system will have to contain the inspection and repair tools and to protect them from the surrounding liquid sodium. Concerning…

Fusion materials and technologiesNuclear reactor physics and engineeringNuclear Materials and Properties

P.32: A New a‐IGZO AMOLED Pixel Circuit Design to Improve the OLED Luminance Degradation in 3D Displays

Chih‐Lung Lin、Chia‐Che Hung、Po‐Chun Lai 等 4 位作者2013-06-01SID Symposium Digest of Technical Papers

Abstract This work presents a new pixel circuit using amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs) for three‐dimensional (3D) active‐matrix organic light‐emitting diode (AMOLED) displays. Based on the simulation results, the proposed driving scheme successfully compensates for the luminance…

Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceCCD and CMOS Imaging Sensors

Design status of ITER IC H&CD plant system control

B. Arambhadiya、D. Billava、F. Kazarian 等 20 位作者2013-06-01OpenAlex

A functional approach has been used to define functions & responsibility sharing of each Local Control Unit (LCU) and Ion Cyclotron Heating and Current Drive (IC H&CD) Plant System Control (IC-PSC). The resulting functional architecture of the IC H&CD control system is detailed in this paper. The paper highlights func…

Magnetic confinement fusion researchFusion materials and technologiesParticle accelerators and beam dynamics