Materials Literature
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A magnetic personality: Magnetofection and gene delivery have been investigated in HepG2 cells using ternary organic–inorganic hybrid nanocomposites that contain deferoxamine-coated iron oxide nanoparticles (NPs), circular plasmid DNA, and branched polyethylenimine (PEI). It was found that the cellular uptake efficaci…
The room temperature laser generation in the yellow – green ( ) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of quantum dot heterostructures. The maximum achieved laser wavelength was as high as at a laser cavity length of . High values of both the output pulsed power (up to )…
To identify the contributions of the multiband nature and the anisotropy of a microscopic electronic structure to a macroscopic vortex lattice morphology, we develop a method based on the Eilenberger theory near Hc2 combined with the first-principles band calculation to estimate the stable vortex lattice configuration…
Six alcohol-soluble hemicellulosic preparations from rice straw were comparatively studied, and their physicochemical characterizations were examined. The treatments of the dewaxed rice straw with 60% methanol, 60% ethanol, 60% n-propanol, 60% n-butanol, 60% ethanol containing 0.01 M HCl, and 60% ethanol containing 0.…
Thiophenic sulfur compounds are released during coal gasification, carbonization, and combustion. Previous studies indicate that thiophenic sulfur compounds degrade very slowly in the environment, and are more carcinogenic than polycyclic aromatic hydrocarbons and nitrogenous compounds. Therefore, it is very important…
Two twinning laws, the albite law and the pericline law, are the predominant growth twinning modes in triclinic plagioclase feldspars such as low albite, NaAlSi 3 O 8 , in which the aluminum and silicon atoms are in an ordered arrangement on the tetrahedral sites of the aluminosilicate framework. In the terminology us…
We report a new, novel and universal method to fabricate high-quality titanium dioxide (TiO2) nanofilms on different substrates by a solid phase growth process of ion implantation and subsequent annealing in oxygen atmosphere. Ti ions were implanted into fused silica, soda lime glass, Z-cut quartz, or (0001) α-sapphir…
In this paper, we report on the fabrication of InN nanopyramid-based photodetectors operating within the telecommunication wavelength range. We found that the spectral sensitivity of individually addressable InN nanopyramids can be tuned within an interval of 1550–1750 nm since the band edge luminescence energy correl…
The effects of Mg and Si codoping on Eu luminescence properties have been investigated in Eu-doped GaN (GaN:Eu). The Mg codoping into GaN:Eu produced novel luminescence centers consisting of Eu and Mg, and increased photoluminescence (PL) intensity in Eu,Mg-codoped GaN (GaN:Eu,Mg). However, this increased PL intensity…
Computational pharmacokinetic (PK) modeling gives access to drug concentration vs. time profiles in target organs and allows better interpretation of clinical observations of therapeutic or toxic effects. Physiologically-based PK (PBPK) models in particular, based on mechanistic descriptions of the body anatomy and ph…
This paper is focused on the synthesis of artificial transmission lines based on complementary split ring resonators (CSRRs). The considered structures are microstrip lines with CSRRs etched in the ground plane and microstrip lines loaded with both CSRRs and series capacitive gaps. An aggressive space mapping (ASM) op…
We report on accumulation of background Si and O impurities measured by secondary ion mass spectrometry (SIMS) at the sub-interfaces in undoped, Zn- and Mg-doped multi-layer GaN structures grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates with growth interruptions. The impurities accumulation is attri…
This paper reports on an extensive analysis of the electrical and optical properties of GaN-based high electron mobility transistors (HEMTs) biased in a non-destructive breakdown regime. By means of a number of measurements carried out with varying voltage and temperature conditions, we show that: (i) HEMTs can reach…
The effect of extrinsic photon recycling (EPR) in p-type gallium nitride (p-GaN), namely, increased ionization ratio (R) of magnesium acceptors owing to radiative recombination, was quantitatively investigated. The lateral extension (L) of EPR was determined by using transmission-line-model (TLM) patterns, formed with…
Abstract The effect of quaternary ammonium‐based bolaform counterions (Bolan‐series where n is the number of carbon atoms between the heads) on the adsorption of sodium dodecyl sulfonate (SDDS) at the air/water interface has been studied using surface tension measurements. The results showed that the Bolan counterions…
We demonstrated the electro-optical characteristics of gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs) with sputtered aluminum nitride (AlN) nucleation layer. The introduction of the ex situ sputtered AlN nucleation layer improved the crystal quality of the GaN and the n-AlGaN layer of the Ga…
We previously reported that the extract from cuttlebone (CB) has wound healing effect in burned lesion of rat. In present study, the main component of CB extract was analyzed and its wound healing activity was evaluated by using in vitro acute inflammation model. The extract of CB stimulated macrophages to increase th…
We report a study on Eu the luminescence properties of Eu-doped GaN (GaN:Eu) grown on a GaN substrate by organometallic vapor phase epitaxy (OMVPE). Thermal quenching of the Eu luminescence was suppressed using the GaN substrate, which is due to the preferential formation of a Eu luminescent site with a local structur…
Ohne Schweiß kein Preis: Flexible Biobrennstoffzellen mit Lactatoxidase (LOx) in der Anode und Platin in der Kathode gewinnen biochemische Energie aus menschlichem Schweiß (siehe Bild). In alltäglichen Szenarien wurden so beträchtliche Leistungen erreicht.
GaN films were successfully grown on Si(111) substrates using a reactive-sputter-deposited AlN intermediate layer (sp-AlN) at 350 °C. Uniform GaN growth was obtained with the pre sputtering of a thin Al film before the deposition of sp-AlN. Atomic force microscopy (AFM) measurements revealed that the density of pits o…