Hiroki Ago、Kenta Imamoto、Naoki Ishigami 等 6 位作者2007-03-19Applied Physics Letters
The authors study the growth mechanism of single-walled carbon nanotubes (SWNTs) horizontally aligned on A-plane single crystal sapphire (112¯0) by making the controlled step/terrace structure. SWNT growth direction was sensitive to the surface geometry of the sapphire, and there was competition between two growth mod…
Carbon Nanotubes in CompositesGraphene research and applicationsNanotechnology research and applications
K. Ambujam、S. Selvakumar、Ginson P. Joseph 等 5 位作者2007-03-19Materials and Manufacturing Processes
The bimetallic thiocyanate of the group IIB divalent d10 ions Zn2+ and Hg2+ having unique characteristics: The pale color and high thermal stability—Zinc Mercury tetrathiocyanate (ZMTC) is chosen for growth and study. ZMTC is grown in silica gel by chemical reaction method and characterized by single crystal XRD, FTIR…
Nonlinear Optical Materials ResearchPhotorefractive and Nonlinear OpticsSolid-state spectroscopy and crystallography
Sung‐Fu Hsu、Tzong‐Ming Wu、Chien‐Shiun Liao2007-03-19Journal of Polymer Science Part B Polymer Physics
Abstract X‐ray diffraction method and differential scanning calorimetry analysis have been used to investigate the nonisothermal crystallization of poly(3‐hydroxybutyrate) (PHB)/poly(ethylene glycol) phosphonates (PEOPAs)‐modified layered double hydroxide (PMLDH) nanocomposites. Effects of cooling rates and PMLDH cont…
Polymer crystallization and propertiesbiodegradable polymer synthesis and propertiesCarbon dioxide utilization in catalysis
Young Rack Ahn、Chong Rae Park、Seong Mu Jo 等 4 位作者2007-03-19Applied Physics Letters
Electrochemical capacitors based on RuO2 were prepared onto electrospun TiO2 nanorods. Further heat treatment of the TiO2 at 800°C under nitrogen was found to greatly improve the electrochemical performance of the RuO2 electrodes, especially at fast charge-discharge rates. The specific capacitance was found to decreas…
Supercapacitor Materials and FabricationConducting polymers and applicationsAdvanced battery technologies research
Thomas Waitz、Michael Tiemann、Peter J. Klar 等 6 位作者2007-03-19Applied Physics Letters
The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the u…
ZnO doping and propertiesCatalytic Processes in Materials ScienceAerogels and thermal insulation
Hajime Shibata、Hitoshi Tampo、Koji Matsubara 等 8 位作者2007-03-19Applied Physics Letters
The authors report that high-quality Zn1−xMgxO alloys are very brilliant light emitters, even more brilliant than ZnO, particularly in the high-temperature region; both the emission bandwidth and the oscillator strength of the photoluminescence from Zn1−xMgxO alloys increase remarkably with increasing Mg composition r…
ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials
Barry D. Howes、Luca Guerrini、Santiago Sánchez‐Cortés 等 6 位作者2007-03-19Journal of Raman Spectroscopy
Abstract The influence of pH and anions on the adsorption mechanism of rifampicin on colloidal silver nanoparticles has been analysed by electronic absorption, resonance Raman (RR) and surface‐enhanced resonance Raman spectroscopy (SERRS). Rifampicin is a widely used antibiotic with a zwitterionic nature. SERRS spectr…
Gold and Silver Nanoparticles Synthesis and ApplicationsSpectroscopy Techniques in Biomedical and Chemical ResearchProtein Interaction Studies and Fluorescence Analysis
Xuan Wang、R. Q. Zhang、S. T. Lee 等 5 位作者2007-03-19Applied Physics Letters
It is well known that the electronic and optical absorption gaps of hydrogenated silicon nanoparticles are inversely proportional to the particle size. Here, the authors show that their optical emission gaps are remarkably different and dully dependent on the size for those smaller than 1.5nm, based on their excited-s…
Quantum Dots Synthesis And PropertiesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces
Qilin Gu、C. C. Ling、Xiaozhuo Chen 等 11 位作者2007-03-19Applied Physics Letters
Conversion of the Au∕n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2O2 treatment did not affect the carbon surface contamination or the EC–0.3…
Advancements in Battery MaterialsZnO doping and propertiesSemiconductor materials and devices
Christopher A. Bower、Kristin H. Gilchrist、Jeffrey R. Piascik 等 8 位作者2007-03-19Applied Physics Letters
A lateral on-chip electron-impact ion source utilizing a carbon nanotube field emission electron source was fabricated and characterized. The device consists of a cathode with aligned carbon nanotubes, a control grid, and an ion collector electrode. The electron-impact ionization of He, Ar, and Xe was studied as a fun…
Carbon Nanotubes in CompositesMechanical and Optical ResonatorsElectrohydrodynamics and Fluid Dynamics
Guozhen Shen、Yoshio Bando、Jiangang Hu 等 4 位作者2007-03-19Applied Physics Letters
Sixfold symmetry heptapodlike and threefold symmetry tetrapodlike ZnS structures have been fabricated by thermal evaporation of a ZnS and SiO mixture source in N2 at 1300°C. Both the heptapods and tetrapods have been formed by the self-assembly of ZnS nanowires with the preferred (0001) orientations. Structures and mo…
Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsNanowire Synthesis and Applications
Arri Priimägi、M. Kaivola、Francisco J. Rodríguez 等 4 位作者2007-03-19Applied Physics Letters
The authors demonstrate that photoinduced birefringence in azo-dye-doped polymers is strongly enhanced by hydrogen bonding between the guest molecules and the polymer host. The primary mechanism behind the enhancement is the possibility to use high dye doping levels compared to conventional guest-host systems because…
Liquid Crystal Research AdvancementsPhotochemistry and Electron Transfer StudiesPhotochromic and Fluorescence Chemistry
Daichi Chiba、Yu Nishitani、F. Matsukura 等 4 位作者2007-03-19Applied Physics Letters
A series of Ga1−xMnxAs layers with high Mn compositions x (=0.075–0.200) has been grown and investigated. Magnetization, magnetotransport, and magneto-optical properties reveal that the layers have single ferromagnetic phase as in the case of typical (Ga,Mn)As. The authors also describe the variation of magnetic aniso…
ZnO doping and propertiesMagnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides
Sang Youn Jeon、Seung Hwan Shin、Seok Jin Jeong 等 8 位作者2007-03-19Applied Physics Letters
Homogeneously aligned nematic liquid crystal (LC) cells doped with carbon nanotubes (CNTs) driven by an in-plane field were fabricated and their electro-optic characteristics were investigated. The effective cell retardation values showed no difference between doped and undoped LC cells in the absence of electric fiel…
Liquid Crystal Research AdvancementsPhotonic Crystals and ApplicationsMechanical and Optical Resonators
Mark A. Tschopp、David L. McDowell2007-03-19Applied Physics Letters
This letter addresses the dependence of homogeneous dislocation nucleation on the crystallographic orientation of pure copper under uniaxial tension and compression. Molecular dynamics simulation results with an embedded-atom method potential show that the stress required for homogeneous dislocation nucleation is high…
Microstructure and mechanical propertiesFusion materials and technologiesHigh-Velocity Impact and Material Behavior
Alfred T. H. Chuang、John Robertson、Bojan O. Boskovic 等 4 位作者2007-03-19Applied Physics Letters
The authors report the growth of carbon nanowalls in freestanding, three-dimensional aggregates by microwave plasma-enhanced chemical vapor deposition. Carbon nanowalls extrude from plasma sites into three-dimensional space. The growth is catalyst-free and not limited by nucleating surfaces. The growth mechanism is di…
Carbon Nanotubes in CompositesGraphene research and applicationsDiamond and Carbon-based Materials Research
Janne A. Ihalainen、Jens Bredenbeck、Rolf Pfister 等 8 位作者2007-03-19Proceedings of the National Academy of Sciences
Using time-resolved IR spectroscopy, we monitored the kinetics of folding and unfolding processes of a photoswitchable 16-residue alanine-based alpha-helical peptide on a timescale from few picoseconds to almost 40 micros and over a large temperature range (279-318 K). The folding and unfolding processes were triggere…
Receptor Mechanisms and SignalingPhotochromic and Fluorescence ChemistryPhotoreceptor and optogenetics research
E. Heifets、Sergei Piskunov、E. A. Kotomin 等 5 位作者2007-03-19Physical Review B
Using the B3PW hybrid exchange-correlation functional within density-functional theory and employing Gaussian-type basis sets, we calculated the atomic and electronic structures and thermodynamic stability of three double-layered (DL) $\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ surfaces: (i) SrO-terminated, (ii) $\m…
Magnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides
Sergey V. Ovsyannikov、Vladimir V. Shchennikov2007-03-19Applied Physics Letters
The variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room temperature for the pressure P range of P∼0–10GPa are reported. A colossal (∼100 times) pressure-tuned improvement of æ is found for PbTe-based crystals under…
Advanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsAdvanced Thermodynamics and Statistical Mechanics
Jingchang Sun、Jianze Zhao、Hongwei Liang 等 9 位作者2007-03-19Applied Physics Letters
ZnO homojunction light-emitting diode with n-ZnO∕p-ZnO:As∕GaAs structure is produced by metal organic chemical vapor deposition. The p-type ZnO:As film is obtained out of thermal diffusion of arsenic from GaAs substrate with subsequent thermal annealing at 550°C. The n-type layer is composed of unintentionally doped Z…
ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials