Materials Literature
按标题、摘要、年份、主题和来源检索公开元数据。结果保留作者、摘要、分类与原始来源链接。
The effects of material properties and inclusions on the space charge profiles in LDPE and XLPE were examined. Whereas the charge profile in LDPE is influenced by material properties such as the degree of crystallinity and MFR, the charge profile in XLPE is influenced by inclusions in the material such as acetophenone…
This work explores the thermal behavior of silicone rubber filled at different concentrations with alumina trihydrate (ATH) and silica. Three particle sizes, 1.5 /spl mu/m, 5 /spl mu/m and 10 /spl mu/m, were employed in the sample preparation. A near-infrared laser was used to heat the samples. The concentration of th…
A high performance thermal interface material has been developed that consists of a 25 /spl mu/m coating of low-melting-temperature alloy (LMTA) tinned on each side of a 50 /spl mu/m copper substrate. The alloy has a melting point below the maximum CPU operating temperature. Steady-state tests per ASTM D-5470 show 0.0…
This paper investigates the impact of Joule heating on the scaling trends of advanced VLSI interconnects. It shows that the interconnect Joule heating can strongly affect the maximum operating temperature of the global wires which, in turn, will constrain the scaling of current density to mitigate electromigration and…
Studied stress-induced voiding in Cu interconnects in the temperature range below 250/spl deg/C, and found two different voiding modes. One mode occurs inside a via having wide wire above it, and can be suppressed by optimizing the via shape and the via-cleaning process. The other mode occurs under a via having wide w…
Electromigration is a well-known wearout mechanism for metallic interconnects on integrated circuit chips, and has been studied for decades in Al metallization, and for the last several years in Cu metallization. Chip failure is caused by either catastrophic electrical open or by resistance shifts sufficiently large t…
We have studied both the etching of SiO2 film and the growth of an amorphous fluorinated carbon (a-C:F) film by mass-analyzed fluorocarbon ion irradiation. This experiment was done in an ultrahigh vacuum with a pressure of 10−7 Pa even during irradiation. When using a carbon monoflouride (CF1+) ion with an energy of 3…
The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3 V CMOS, cells from 5F/sup 2/ to 8F/sup 2/ are built in a charge-pump-free 4 Mb development vehicle. Direct overwrite, 1…
We derive the effective low-energy theory for interacting electrons in metallic single-wall carbon nanotubes, taking into account phonon exchange due to twisting, stretching, and breathing modes within a continuum elastic description. In many cases, the nanotube can be described as a standard Luttinger liquid with pos…
Electromigration is caused by high current density stress in metallization patterns and is a major source of breakdown in electronic devices. It is therefore an important reliability issue to verify current densities within all stressed metallization patterns. In this paper we propose a new methodology for hierarchica…
The change in PD (partial discharge) pulse shape for a void bounded with LDPE was measured using a time-resolved measurement system with an ultra-wideband detector. Phase-resolved patterns also were obtained by a conventional PD measuring system. The frequency spectrum analysis of PD pulse waveform showed that ageing…
UHF patterns of discharges representative of that occurring in a transformer were recorded by simulating them in a 220 kV test tank. The influence of the location of the UHF sensor, type of barrier and partial discharge (PD) magnitude on UHF sensitivity was studied. Information concerning the temporal development of d…
The phenomena of surface charging are investigated using the capacitive probe method. In order to decrease the charge leakage a new type probe with high resolution is designed. The influence of voltage amplitude, duration, polarity and surrounding humidity on the surface charging are studied. The accumulation competit…
Joints are generally known to be the weakest link of underground distribution lines. One of the most common failure modes is attributable to the occurrence of dielectric breakdown at the cable-joint interface. Interfacial pressure is known to be a key factor in the interfacial breakdown strength: a high interfacial pr…
A novel approach for the detection of molecular interactions is presented in which a colorimetric resonant diffractive grating surface is used as a surface binding platform. A guided mode resonant phenomenon is used to produce an optical structure that, when illuminated with white light, is designed to reflect only a…
Oxidized porous silicon (OPS) has the potential to produce low loss designs for high-density RF passive and CMOS integrated circuits. Herein are findings on porosity effects on finite ground coplanar waveguide (FGCPW) lines printed on OPS material up to 50 GHz. At 51% porosity, measured effective dielectric constant d…
Molecular modeling has previously been used to study adhesion and surface energy effects of die attach, underfill and viafill formulations, and is currently being used to study the mechanical property trends of the new class of ultra low k nanoporous dielectric materials, NANOGLASS/spl reg/ porous spin-on-glass (SOG)…
Today, most railway applications use hybrid power modules. These IGBT modules are constituted of several dielectric materials to achieve chip packaging. Due to the presence of high voltage, new phenomena which could be previously ignored for lower voltage ratings have now to be taken into account. This is the case of…
Study of partial discharge (PD) behavior in electrical apparatus is important to know the degradation of insulating materials. The characterization of these pulses in the form of cavity discharge, corona discharge and surface discharge is important to identify the faulty location and to quantify the degree of deterior…
A PECVD deposited carbon hardmask is combined with dielectric anti-reflective coating (DARC) for the patterning of sub-90nm lines with 248nm lithography. Using this CVD dual layer stack, <1% reflectivity control is demonstrated for both 248nm and 193nm lithography. The film stack is tested with an etch integration sch…