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Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures

Ji-Chul Jung、Minseok Kang、Jihong Kim 等 6 位作者2011-12-01OpenAlex

Among the wide band gap semiconductor materials that have drawn a lot of attention recently, ZnO and SiC are seriously considered as materials for emerging electronics applications. ZnO has received attention for its application for UV light-emitters, transparent high power electronics, sensors, piezo electric transdu…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials

Selective nano-devices for the detection of nitroaromatic explosive compounds

Geetha S. Aluri、Abhishek Motayed、Albert V. Davydov 等 7 位作者2011-12-01OpenAlex

In recent years, there is an increased threat of explosive attacks worldwide, as the explosive - based weapons are easy to make, obtain and deploy. Detecting traces of explosives is a challenging task because of the low vapor pressures of most explosives [1]. Protecting against explosive-based terrorism can be achieve…

Gas Sensing Nanomaterials and SensorsEnergetic Materials and CombustionBoron and Carbon Nanomaterials Research

Overcoming Auger recombination in nanocrystal quantum dots using Purcell enhancement

Shilpi Gupta、Edo Waks2011-12-01OpenAlex

Chemically synthesized semiconductor nanocrystal quantum dots (NQDs) are promising candidates for gain media in micro/nano-lasers. The key advantage of using these NQDs is wide-tunability of emission wavelength across the visible and near IR spectrum [1], which is achieved by synthesizing NQDs of different sizes. One…

Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesPhotonic Crystals and Applications

GaN power Schottky diodes fabricated on low doped MOCVD layers grown on multiple substrates

Randy P. Tompkins、Shaolin Zhou、J. Smith 等 13 位作者2011-12-01OpenAlex

With its wide bandgap and high critical field, GaN is a promising material for high power electronics. To date, most GaN films have been grown on foreign substrates such as sapphire or SiC. Lattice mismatch between the film and substrate leads to a large number of threading dislocations (~109-1010cm-2). These defects…

ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials

Terahertz and sub-terahertz responses of finite-length multiwall carbon nanotubes

С. А. Максименко、G. Ya. Slepyan、М. В. Шуба 等 4 位作者2011-12-01OpenAlex

The electromagnetic response of a multiwall carbon nanotube (MWNT) of small cross-sectional radius and finite length was theoretically studied in the terahertz and sub-terahertz regimes, by solving an integral equation. The polarizability of the MWNT peaks in the terahertz regime, depending on the length and the numbe…

Carbon Nanotubes in CompositesGraphene research and applicationsThermal Radiation and Cooling Technologies

Scaling-up charge injection to nanowire p-n heterojunctions: From individual nanowires to their large size arrays

Babak Nikoobakht2011-12-01OpenAlex

One-dimensional nanocrystals and nanowires due to their high crystal quality, ease of growth, control and diversity in their composition have become promising building blocks in a number of technologies including photovoltaic, chemical sensing and light sources. One of the technological barriers to integrate such nano…

Advancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and ApplicationsElectronic and Structural Properties of Oxides

Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

J.-H. Kim、J.-W. Kim、Jeongkyun Roh 等 8 位作者2011-12-01OpenAlex

During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid…

ZnO doping and propertiesThin-Film Transistor TechnologiesElectrical and Thermal Properties of Materials

Multilayer, colloidal nanoparticle based devices for biological and nuclear radiation detection

Liqiao Qin、Christopher Shing、Shayla Sawyer2011-12-01OpenAlex

Multiple layers of colloidal nanoparticles were used to make large area, visible blind and wavelength selective, ultraviolet (UV) photodetectors [1]. Polyvinyl-alcohol (PVA) coated ZnO nanoparticles were created by a top-down wet-chemical means and deposited on quartz, glass, or GaN-based substrates [1-3]. The advanta…

Luminescence Properties of Advanced MaterialsQuantum Dots Synthesis And PropertiesRadiation Detection and Scintillator Technologies

Investigation on 4S ceramic heater surface ignition C.I. engine using ethanol- diesel blends with amyl nitrate additive

R. Rama udaya Marthandan、B. Durga Prasad2011-12-01OpenAlex

An experimental investigation on the performance of surface ignition 4S (four stroke) C.I (Compression Ignition) engine fueled with pure diesel (0/100) and ethanol-diesel blends ratio of 15/85, 25/75, 30/70 and 35/65 by volume of ethanol are evaluated. Amyl nitrate (B) additive is used to satisfy mixture homogeneity a…

Advanced Combustion Engine TechnologiesCatalytic Processes in Materials ScienceBiodiesel Production and Applications

Characteristics of AlGaN/GaN heterostructure field effect transistor grown on 4 inch Si (111) substrate using formation of dot-like AlSixC1−x interlayer

Jae‐Hoon Lee、Y.-S. Kwak、Jae-Hyun Jeong 等 11 位作者2011-12-01OpenAlex

Group III-nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices [1]. The AlGaN/GaN heterostructure field-effect transistors (HFETs) have a great potential for future high-frequency and high-power applications…

ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials

Modeling of thermal conductivity and thermoelectric power factor in ultrathin SOI nanomembranes and silicon nanowires

Zlatan Akšamija、I. Knežević、E. B. Ramayya2011-12-01OpenAlex

Thermoelectric (TE) refrigeration using Si-based nanostructures is an attractive approach for on-chip thermal energy harvesting and targeted cooling of local hotspots [1] due to the ease of on-chip integration and the nanowires' enhanced TE figure of merit [2] ZT=S2σ/(κl+κe) [3]. Silicon-on-insulator (SOI) membranes […

Advanced Thermoelectric Materials and DevicesThermal properties of materialsThermal Radiation and Cooling Technologies

Controlling charility and pinhole defects in Ni catalyst for synthesis of graphene

Eugene Zakar、Kevin Hauri、Richard Fu2011-12-01OpenAlex

Controlling the growth of proper crystal morphology and defect density in Ni catalyst are necessary ingredients for achieving precision number of graphene layers [1] and good yields in CMOS transistor device fabrication. The size of grains can be controlled during sputter deposition but the apparent effects in charili…

Graphene research and applicationsSemiconductor materials and devicesDiamond and Carbon-based Materials Research

Studies on antagonistic effect of streptomyces species collected from polluted and non polluted environment

Anima Nanda、A. Zarina2011-12-01OpenAlex

Actinomycetes were widely distributed in soil are the source of antibiotics. Antibiotic resistant pathogens pose an enormous threat to the treatment of wide range of serious infections. To overcome this emergence, a periodic replacement of the new and existing antibiotic is necessary, simultaneously doses also increas…

Nanoparticles: synthesis and applicationsPharmaceutical and Antibiotic Environmental ImpactsChemistry and Chemical Engineering

Fabrication and characterization of size-controlled CdS nanostructures by a modified chemical bath deposition method

M. Celalettin Baykul、N. Orhan2011-12-01OpenAlex

CdS nanostructures have been grown on glass substrate by a modified chemical bath deposition method (MCBD) using CdCl2 (0.02 M), KOH (0.5 M), NH4NO3 (1.5 M) and HNCSNH (0.2 M) aqueous solutions at the bath temperature of 80°C and the pH of 10.40. Power adjustable Ar-Ion Laser beam with the powers of 150 mW, 250 mW, an…

Quantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsAdvanced Semiconductor Detectors and Materials

Corrosion behavior of 0.02–2.0wt% Vanadium alloyed grey iron

Siti Khadijah Alias、Bulan Abdullah、Mohd Faizul Idham 等 6 位作者2011-12-01OpenAlex

This paper focused on corrosion behavior of grey cast iron having 0.02wt %, 0.5wt% and 2wt% vanadium as the alloying elements. Vanadium alloyed grey cast iron samples were produced by using Y - block CO2sand casting process and poured into double cylinder mould. The corrosion behavior was measured from polarization me…

Hydrogen embrittlement and corrosion behaviors in metalsAdvanced materials and compositesMetal Alloys Wear and Properties

Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs QW FETs

A. Gili I. Tsopelas、J. P. Xanthakis2011-12-01OpenAlex

During the last 2-3 years there has been an intensive research on InGaAs quantum well channels [1-4] as a possible alternative to the traditional Si-SiO2FETs. Both Al2O3[1-3] and HfO2[4] are used as gate oxides. The fabricated devices with available current-voltage characteristics in the literature are of long gates.…

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignElectronic and Structural Properties of Oxides

Room temperature Plasma Assisted Atomic Layer Deposition Al2O3 film's encapsulation application in Organic Light Emitting Diodes

Richard Fu、Andrew Chen、Merric Srour 等 7 位作者2011-12-01OpenAlex

Organic Light Emitting Diodes (OLED) are made from multilayer organic polymers and electrodes that can produce light. However, OLEDs are required to be protected from oxygen, moisture by encapsulation or seal, generally using a metal cap. The metal cap is heavier, larger and expensive. On the other hand, Plasma Assist…

GaN-based semiconductor devices and materialsSemiconductor materials and devicesCopper Interconnects and Reliability

Fabrication of ZnO homojunction by Al-As-N tridoping

L. Balakrishnan、S. Gowrishankar、N. Gopalakrishnan2011-12-01OpenAlex

In recent years, ZnO has received great attention for optoelectronic applications (UV LEDs and LDs) because of its splendor properties such as high excitonic binding energy, high optical gain, and high radiation & temperature stability. In order to develop these ZnO based optoelectronic devices, the first step is the…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials

An investigation of ZGNR-based transistors

Hossein Karamitaheri、Mahdi Pourfath、Rahim Faez 等 4 位作者2011-12-01OpenAlex

Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of…

Graphene research and applicationsSupercapacitor Materials and FabricationGraphene and Nanomaterials Applications

Phase-change memory on thin-film-transistor technology

Lin Li、Lining Zhang、Jin He 等 4 位作者2011-12-01OpenAlex

Phase-change memory (PCM) stores information based on the PC material's property to reversibly switch between two resistance states by Joule heating with applied currents [1], and provides a new set of features combining features of the DRAM and the Flash memory. PCM on thin-film-transistor (TFT) technology can potent…

Advanced Memory and Neural ComputingThin-Film Transistor TechnologiesPhase-change materials and chalcogenides