Materials Literature
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Actinomycetes were widely distributed in soil are the source of antibiotics. Antibiotic resistant pathogens pose an enormous threat to the treatment of wide range of serious infections. To overcome this emergence, a periodic replacement of the new and existing antibiotic is necessary, simultaneously doses also increas…
CdS nanostructures have been grown on glass substrate by a modified chemical bath deposition method (MCBD) using CdCl2 (0.02 M), KOH (0.5 M), NH4NO3 (1.5 M) and HNCSNH (0.2 M) aqueous solutions at the bath temperature of 80°C and the pH of 10.40. Power adjustable Ar-Ion Laser beam with the powers of 150 mW, 250 mW, an…
This paper focused on corrosion behavior of grey cast iron having 0.02wt %, 0.5wt% and 2wt% vanadium as the alloying elements. Vanadium alloyed grey cast iron samples were produced by using Y - block CO2sand casting process and poured into double cylinder mould. The corrosion behavior was measured from polarization me…
During the last 2-3 years there has been an intensive research on InGaAs quantum well channels [1-4] as a possible alternative to the traditional Si-SiO2FETs. Both Al2O3[1-3] and HfO2[4] are used as gate oxides. The fabricated devices with available current-voltage characteristics in the literature are of long gates.…
Organic Light Emitting Diodes (OLED) are made from multilayer organic polymers and electrodes that can produce light. However, OLEDs are required to be protected from oxygen, moisture by encapsulation or seal, generally using a metal cap. The metal cap is heavier, larger and expensive. On the other hand, Plasma Assist…
In recent years, ZnO has received great attention for optoelectronic applications (UV LEDs and LDs) because of its splendor properties such as high excitonic binding energy, high optical gain, and high radiation & temperature stability. In order to develop these ZnO based optoelectronic devices, the first step is the…
Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of…
Phase-change memory (PCM) stores information based on the PC material's property to reversibly switch between two resistance states by Joule heating with applied currents [1], and provides a new set of features combining features of the DRAM and the Flash memory. PCM on thin-film-transistor (TFT) technology can potent…
In this paper, a novel design of CNTs arrays is studied to enhance the field emission by using self-assembled microspheres as mask. The schematics in both 3-D of the unclose-packed microspheres deposited on top of the catalyst on the substrate was shown. The unclose-packed microspheres can be formed by using self-asse…
Since the first isolation of graphene in 2004, graphene research has generated great excitement among device engineers due to the outstanding material properties of this single layer of sp2-bonded carbon atoms. Mobilities in excess of 100,000 cm2/Vs, perfect carrier confinement within one monolayer, and ballistic tran…
In this paper, we investigate the deposition temperature dependent electrical properties of GaZnO thin films grown onto 4H-SiC. GaZnO thin films were deposited by pulsed laser deposition (PLD), at substrate temperatures (Ts) from 250 to 550 °C, on the n-type 4H-SiC (phosphorus doped, -0.019 Ohm-cm). The AFM surface mo…
In this work we present a 3-dimensional (3-D) model for the simulation of Polymer Electrolyte Fuel Cell (PEFC). The model is implemented in our in-house semiconductor and circuit simulator developed at Florida State University, RandFlux [1]. The transport equations are written in a form similar to the transport equati…
Different Si oxide dimension (OD) geometrical features, consisting of Shallow Trench Insulator (STI) structure, and processes of fabrication such as one-side pad SiN layer and two-sides pad SiN layer are implemented to investigate the residual mechanical stress in Si oxide dimension through full process flow of modern…
The main object of this research is to develop highly transparent polymeric films with the anti-static property. In order to enhance the miscibility between inorganic and organic phases, a coupling agent, HEMA/TiO(subscript 2) precursor, was made from HEMA and Ti (OBu) (subscript 4). The HEMA/TiO(subscript 2) precurso…
Advances in AlGaN-based mid-ultraviolet (< 290 nm) light emitting diodes (LEDs) have produced compact light sources with efficiencies approaching 4% [1,2] Efficiencies still greatly lag behind those of InGaN-based visible LEDs however, for a number of reasons. Among these is the reduced doping efficiency and carrier m…
Graphene is regarded as a promising material that could be the basis for future generations of low-power, faster, and smaller electronics [1,2]. Currently, chemical vapor deposition (CVD) growth method is the only way that can produce large area monolayer graphene up to tens of inches with high quality [3,4], which ma…
Recently, two-terminal metal-oxide-based devices showing memresitive behavior have been attracting much attention due to their promising characteristics for next generation memory and logic technologies [1]. Among different types of memresitive mechanisms, TaOXbased devices combined with copper and platinum electrodes…
For better performance on charge-trapping(CT) flash device, tunneling layer stacks of nitrogen(N)-rich SiN/SiO2and low temperature(LT) N-rich SiN/SiO2are studied. The programming and erasing speeds of CT flash device are significantly improved by the tunneling layer stacks due to the lower conduction and valence band…
Polycrystalline silicon thin-film transistors (poly-Si TFTs) have attracted much attention because of the different applications, such as driving circuits of the active matrix liquid crystal displays (AM-LCDs) and those of the active matrix organic light emitting diode displays (AM-OLEDs) [1, 2]. Nickel-titanium oxide…
Since its fabrication in 2004 by A. Geim, K. Novoselov and colleagues at University of Manchester [1], graphene has been considered as a promising candidate material for future nanoelectronics applications. This is due to its high mobility and excellent thermal conductivity. Although graphene is a zero band gap semico…