Materials Literature
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Charging phenomenon caused by ion implantation into the photo-resist has been evaluated with use of a surface potential measurement tool to clarify the mechanism of burst-like discharge of the accumulated charge in medium current implantation machines. The molecular bond of the photo-resist is cleaved by the kinetic e…
Overlay performance will be increasingly important for Spacer Patterning Technology (SPT) and Double Patterning Technology (DPT) as various Resolution Enhancement Techniques are employed to extend the resolution limits of lithography. Continuous shrinkage of devices makes overlay accuracy one of the most critical issu…
The main issue for developing EUV resist is to satisfy the ITRS target of sensitivity, line edge roughness(LER), and resolution simultaneously. However, Resist researchers have difficulty in EUV resist development because they are tradeoff relationships each other. Among them, LER is closely related to acid diffusion…
Abstract Surface modification of topography and chemistry in order to achieve a specific water contact angle (CA) has been explored by using a novel combinatorial screening platform. The screening arrays consisted of 507 distinct combinations of micro‐topographies and chemical compositions. By performing chemical modi…
The phase transition behavior of (1− x )Pb(Sc 0.5 Ta 0.5 )O 3 –( x )PbHfO 3 [PSTH( x ), x =0, 0.05, and 0.10] ceramics was investigated by transmission electron microscopy (TEM), dielectric properties under dc bias, and hysteresis loop measurements at several temperatures. TEM showed 5–10 nm cation‐ordered regions wer…
Recent progress in Block Copolymer lithography has shown that guided self-assembly is a viable alternative for pushing forward the resolution limits of optical lithography. The main two self assembly methods considered so far have been the surface chemical modification, which is based on the chemical modification of a…
Several approaches have been used to minimize LWR in advanced resists. Various polymer and matrix properties, such as polymer molecular volume and free volume fraction, polymer dissolution, impact of activation energy of the deprotection reaction and distribution of small molecules in the polymer matrix have been show…
Two EUVL masks were made using the compensation method for nonflatness of a mask; and the EUV1 was used to evaluate the resulting overlay accuracy. For the same mask, the reproducibility of the intra-field overlay errors was better than 1 nm (3σ) without linear components; and that of the flatness was better than 20 n…
A method for improving the resolution of a scanning electron microscope (SEM) designed for inspection of nanodevices was developed. The trade-off between the resolution and depth of focus of the SEM was quantitatively evaluated by a method based on information passing capacity. It was theoretically and experimentally…
Magnetic recording on bit patterned media with dot densities of 4 Tbit/in.2 was simulated. Head field distributions of shielded, single pole write heads with various main pole widths were used for recording. Write windows, showing the range of head positions which resulted in error-free recording and no adjacent track…
Mask blank defects have been one of the top challenges in the commercialization of extreme ultraviolet (EUV) lithography. To determine defect sources and devise mitigation solutions, detailed characterization of defects is critical. However, small defects pose challenges in metrology scale-up. SEMATECH has a comprehen…
We investigate energetically favorable configurations of point disclinations in nematic films having a bump geometry. Gradual expansion in the bump width Δ gives rise to a sudden shift in the stable position of the disclinations from the top to the skirt of the bump. The positional shift observed across a threshold Δ…
The Einstein–Brillouin–Keller semiclassical quantization and the topological Maslov index are used to compute the electronic structure of carbon based nanostructures with or without transverse magnetic field. The calculation is based on the Dirac Fermions approach in the limit of strong coupling for the pseudospin. Th…
As the design rule for semiconductor device shrinks, metrology for the critical dimension scanning electron microscope (CD-SEM) is not only for measuring the dimension but also the shape, such as 2D contour of hot-spot pattern and OPC calibration-pattern. Accuracy of the shape metrology is dependent on distortion of C…
For a comprehensive and objective understanding of the dynamic overload character of projectile penetrate into a steel target, using the simulating software ANSYS/LS-DYNA, adopting of the corresponding ammunition and target model, and the process of the ammunition penetrate the steel target was simulated and computed,…
The next generation of semi-conductor devices will be manufactured using extreme ultraviolet lithography with a laser-produced plasma as a candidate 13.5nm light source. A primary challenge, particularly for metrology tools, is the stability and the brightness of the generated EUV at the intermediate focus. In the exp…
The commercialization of 32 nm lithography has been made possible by using double patterning, a technique that allows for an increased pattern density, potentially, through resist freezing and high precision pattern registration. Recent developments in directed self assembly (DSA) also uses resist freezing for stabili…
NRAM technology, a non-volatile memory based on the use of carbon nanotubes, overcomes the limitations of other memory technology types (including traditional Flash), for sub-40nm nodes, and is currently developed in manufacturing fabs. The NRAM technology process flow involves the deposition of a film of carbon nanot…
Abstract Review: 403 refs.
Before new equipment for handling of EUV reticles can be used, it should be shown that the apparatus is qualified for operating at a sufficiently clean level. TNO developed a qualification procedure that is separated into two parts: reticle handling and transport qualification and the qualification of the equipment. A…