Materials Literature
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With the projected rollout of pre-production extreme ultraviolet lithography (EUVL) scanners in 2010, EUVL pilot line production will become a reality in wafer fabrication companies. Among EUVL infrastructure items that must be ready, EUV mask carriers remain critical. To keep non-pellicle EUV masks free from particle…
With the delay of a next-node lithography solution, lithographers are required to evaluate double patterning techniques such as double pattern/double etch (DP/DE) to meet scaling targets for the 22nm logic node. The tightest design rule level to pattern has traditionally been the first metal level. For this node, targ…
The electrical conductivity of PVC films prepared with a patented plasticizer of type "A" was measured with high precision automated setup, based on standard ring sell with a voltage range much less than breakdown voltage. Continual voltage-current measurements permit to take into account Debay relaxation process and…
The scatterometry or OCD (Optical CD) metrology technique has in recent years moved from being a general purpose CD metrology technique to one that addresses the metrology needs of process monitoring and control, where its strengths can be fully utilized. With the significant advancements that have been made in both h…
The emerging understanding of the 2-year-old materials could change physicists' views on the decades-old mystery of high-temperature superconductivity.
In this study, a unique concept of manufacturing hybrid graphite nanoplatelets (GNP)-carbon nanotube (CNT) nanopapers for electrical application has been explored. The new approach includes making hybrid GNP-CNT nanopapers by the filtration of well-dispersed GNPs-CNT suspension through high pressure systems. The hybri…
We have developed a processing method that employs direct surface imaging of a surface-modified silicon wafer to define a chemical nanopattern that directs material assembly, eliminating most of the traditional processing steps. Defining areas of high and low surface energy by selective alkylsiloxane removal that matc…
Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies for the 22 nm node and below. Generally, EUVL used a reflectivity type mask consist of absorber layer on a mask blank substrate coated with Mo/Si multilayer. Especially, reflectivity from EUV mask multilayer could be one of the important fact…
Ba0.60Sr0.40TiO3 (BST) thin films, grown via RF-sputtering and the metalorganic solution deposition (MOSD) techniques, were post-growth annealed via conventional thermal annealing (CTA) and UV-photon irradiation annealing. With respect to the conventional thermal annealed films the UV-photon irradiation annealed films…
Shape-memory polymers (SMP) composites have attracted significant attention from both industrial and academic researchers due to their useful and fascinating functionality. Generally, SMP can be actuated by heat, electricity, water and chemicals. A large amount of work has been done on the shape recovery of shape memo…
Miniature, low mass actuators play an important role for practical applications in developing technologies. Having the responsive behavior to the applied current, Shape Memory Alloy (SMA) wire actuators provide cost effective solutions to many actuation problems. However there are still challenging problems need to be…
Three-dimensional (3D) Monte Carlo simulation is an effective approach to determine the percolation threshold and reveal the electrical conductivity of nanocomposites that are composed of conducting fillers and insulating matrix polymer. With random nanofiller distribution, composite can be considered as periodic stac…
Optical properties (n&k) of the material films under measurement are commonly assumed invariant and fixed in scatterometry modeling. This assumption keeps the modeling simple by limiting the number of floating parameters in the model. Such scatterometry measurement has the potential to measure with high precision some…
The examination of the roughness evolution of open-surface resist films during development may elucidate the material origins of Line Edge Roughness. In this paper, a stochastic simulator of resist development is used and the surface roughness evolution is analyzed with dynamic scaling theory. A power-law increase of…
Fatigue and fracture of structures often originate from the surface notch or crack. In this contribution, a Peierls type continuum model developed by Rice (1992, Dislocation Nucleation From a Crack Tip: An Analysis Based on the Peierls Concept, Journal of the Mechanics and Physics of Solids, 40: 239—271) is employed t…
By referring to the BET polymolecular layer adsorption model, this paper has built up the polymolecular layer adsorption model for the moisture adsorption of fabrics. For polyester—cotton fabrics of different warp and weft densities and different weave structures, in this paper we have carried out moisture adsorption…
In this study, multilayer morphology near the key anomalies in grating-like structures, namely sharp step-edges and steep walls, are examined. Different deposition schemes are employed. Based on cross section TEM analysis an explanatory model describing the morphology of the successive layers is developed. A further i…
In this paper the first order analysis of the scatterometry sensitivity up to 45nm HP resin pattern and beyond by using RCWA (Rigorous Coupled Wave-analysis) simulation is described. A criterion, defined as the sum of the absolute difference of the reflectivity values between the nominal and varied conditions thorough…
Double patterning is one of the enabling techniques to allow for further shrinking of devices in the future. Many different solutions, like LELE (Litho-Etch-Litho-Etch) and LPL (Litho-Process-Litho), have been investigated in the past years. In this paper a simplified - "Litho-Cluster-Only" - solution for double patte…
SI-traceable critical dimension 3DAFM was used to characterize 25 nm NanoCD linewidth standard. The standard has a uniquely low linewidth roughness (LWR) and can be used as a benchmark during development of advanced patterning technologies. The following results were obtained: (a) Mean LWR for two 25 nm standards with…